JPH01227423A - Laser melting and recrystallization of semiconductor thin film - Google Patents
Laser melting and recrystallization of semiconductor thin filmInfo
- Publication number
- JPH01227423A JPH01227423A JP5328988A JP5328988A JPH01227423A JP H01227423 A JPH01227423 A JP H01227423A JP 5328988 A JP5328988 A JP 5328988A JP 5328988 A JP5328988 A JP 5328988A JP H01227423 A JPH01227423 A JP H01227423A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- semiconductor
- laser beams
- cooling medium
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000002844 melting Methods 0.000 title claims description 14
- 230000008018 melting Effects 0.000 title claims description 14
- 238000001953 recrystallisation Methods 0.000 title claims description 8
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000002826 coolant Substances 0.000 claims abstract description 8
- 238000001816 cooling Methods 0.000 claims abstract description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 13
- 229910052710 silicon Inorganic materials 0.000 abstract description 13
- 239000010703 silicon Substances 0.000 abstract description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 12
- 239000002202 Polyethylene glycol Substances 0.000 abstract description 9
- 229920001223 polyethylene glycol Polymers 0.000 abstract description 9
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 7
- 239000000758 substrate Substances 0.000 abstract description 7
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 6
- 239000000377 silicon dioxide Substances 0.000 abstract description 6
- 239000013078 crystal Substances 0.000 abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052786 argon Inorganic materials 0.000 abstract description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 239000003989 dielectric material Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000005304 optical glass Substances 0.000 description 3
- -1 polyethylene Polymers 0.000 description 3
- 229920000573 polyethylene Polymers 0.000 description 3
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 241000270281 Coluber constrictor Species 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- OQZCSNDVOWYALR-UHFFFAOYSA-N flurochloridone Chemical compound FC(F)(F)C1=CC=CC(N2C(C(Cl)C(CCl)C2)=O)=C1 OQZCSNDVOWYALR-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、半導体デイバイスの作製技術に係わり、半導
体薄膜にレーザー光照射を行い、この半導体薄膜を溶融
および再結晶化させる方法に関す・るものである。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a technology for manufacturing semiconductor devices, and relates to a method for melting and recrystallizing a semiconductor thin film by irradiating a semiconductor thin film with laser light. It is something.
（従来の技術とその課題）
既に、半導体薄膜にレーザー光を照射して前記薄膜を溶
融再結晶化する技術が公知である。(Prior Art and its Problems) A technique is already known in which a semiconductor thin film is irradiated with laser light to melt and recrystallize the thin film.
第３図は従来の半一体薄膜の溶融再結晶化の方法を示す
もので、前記薄膜の断面形状の模式図である。例えば、
第３図において、半導体薄膜４２は誘電体４１と誘電体
４３によって挟まれており、一方の誘電体４１は機械的
強度を持つ基板として、また、他方の誘電体４３は半導
体の溶融時の保護膜として用い４れていた。半導体薄膜
を溶融するためのレーザー光は、保護膜としての誘電体
４３、即ち気体と接する誘電体薄膜４３を通して照射さ
れていた。基板としての誘電体４１は、板状の誘電体も
しくは半導体基板が用いられ、その上に誘電体薄膜を形
成して利用されていた。誘電体４３は、熱伝導率の悪い
気体と接し、他方の透電体４１は誘電体自体が比較的厚
く形成されているために、レーザー光の照射による上記
薄膜の局所的な加熱による溶融部４４は、冷却条件の悪
い状況下に置かれており、冷却が主として溶融領域の側
面４５に隣接する未溶融半導体薄膜領域４６側への熱放
散によって行われていた。従って、従来のレーザー溶融
再結晶化技術には、再結晶化領域の結晶性が、側面に隣
接する未溶融領域４６によって影響される欠点があり、
半導体デイバイス性能を阻害するという問題があった。FIG. 3 shows a conventional method of melting and recrystallizing a semi-integral thin film, and is a schematic diagram of the cross-sectional shape of the thin film. for example,
In FIG. 3, a semiconductor thin film 42 is sandwiched between a dielectric 41 and a dielectric 43. One dielectric 41 serves as a substrate with mechanical strength, and the other dielectric 43 protects the semiconductor when it is melted. It was used as a membrane. Laser light for melting the semiconductor thin film was irradiated through the dielectric 43 serving as a protective film, that is, the dielectric thin film 43 in contact with gas. As the dielectric material 41 serving as the substrate, a plate-shaped dielectric material or a semiconductor substrate is used, and a dielectric thin film is formed thereon. The dielectric material 43 is in contact with a gas with poor thermal conductivity, and the other conductive material 41 has a relatively thick dielectric material, so that melted portions may occur due to local heating of the thin film by laser beam irradiation. 44 was placed under poor cooling conditions, and cooling was performed mainly by heat dissipation to the side of the unmelted semiconductor thin film region 46 adjacent to the side surface 45 of the melted region. Therefore, the conventional laser melting recrystallization technique has the disadvantage that the crystallinity of the recrystallized region is influenced by the unmelted regions 46 adjacent to the sides.
There was a problem in that it inhibited semiconductor device performance.
（課題を解決するための手段）
本発明はこれらの欠点を解決するために、薄膜構造の表
面に冷却媒体を設けた状態でレーザー光を照射する。(Means for Solving the Problems) In order to solve these drawbacks, the present invention irradiates laser light with a cooling medium provided on the surface of a thin film structure.
本発明に用いることができる冷媒とししては、一般に表
面活性剤として知られるポリエチレンエ−テ、ポリエチ
レンエーテル、ポリエチレンエステル、ポリプロピレン
オキシド等を用いることができる。As the refrigerant that can be used in the present invention, polyethylene ether, polyethylene ether, polyethylene ester, polypropylene oxide, etc., which are generally known as surfactants, can be used.
（作 用）
これにより、半導体薄膜の冷却媒体を設けた面方向への
熱放散が大きくなり、これにより再結晶化領域の結晶性
が側面に隣接する未溶融領域によって影響されない。(Function) This increases heat dissipation in the direction of the surface of the semiconductor thin film on which the cooling medium is provided, so that the crystallinity of the recrystallized region is not affected by the unmelted region adjacent to the side surface.
また、冷媒に用いるポリエチレングリコールはレーザー
光の熱によって水のように沸騰することがなく、前記液
膜は静穏な状態で保持されるため、気泡の発生による薄
膜の割れも生じない。Furthermore, the polyethylene glycol used as the refrigerant does not boil like water due to the heat of the laser beam, and the liquid film is maintained in a quiet state, so that the thin film does not crack due to the generation of bubbles.
（発明の効果）
本発明によって、結晶のグレインサイズは従来のレーザ
ー溶融再結晶化方法によるよりも著しく大きなグレイン
で再結晶化することが可能になり、種々の半導体薄膜素
子の高性能化が容易になった。(Effects of the Invention) According to the present invention, it is possible to recrystallize crystal grains with a significantly larger grain size than in the conventional laser melting recrystallization method, and it is easy to improve the performance of various semiconductor thin film devices. Became.
（実施例） 以下に本発明の実施例を図面を用いて詳細に説明する。(Example) Embodiments of the present invention will be described in detail below with reference to the drawings.
第１図は、本発明を適用したシリコン薄膜のし溶融再結
晶化方法の第１の実施例を示す図である。FIG. 1 is a diagram showing a first embodiment of a method for melting and recrystallizing a silicon thin film to which the present invention is applied.
最初にシリコン基板結晶１１を熱酸化して二酸化シリコ
ン薄膜１２を５６０ｎｍの薄膜で形成した。First, a silicon substrate crystal 11 was thermally oxidized to form a silicon dioxide thin film 12 with a thickness of 560 nm.
次に、減圧ＣＶＤ法（Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ
Ｄｅｐｏｓｉｔｉｏｎ）によりシリコン多結晶薄膜１３
を５１０ｎｍの薄膜で形成し、続いて窒化シリコン薄膜
１４を８０ｎｍの膜厚で形成した。最後に冷却媒体とし
て用いたポリエチグリコール１５でサンプルの表面を覆
った後に、光出力３ワツトのアルゴンイオンレーザ−を
レンズで集光してサンプル表面に照射した。レーザー光
を照射しながらサンプルを移動させることにより、１５
−２０μｍ幅のストライブ状に、レーザー溶融再結晶化
層を形成した。Next, low pressure CVD method (Chemical Vapor
Silicon polycrystalline thin film 13
was formed as a thin film of 510 nm, and then a silicon nitride thin film 14 was formed with a thickness of 80 nm. Finally, after covering the surface of the sample with polyethyglycol 15 used as a cooling medium, an argon ion laser with an optical output of 3 watts was focused by a lens and irradiated onto the sample surface. By moving the sample while irradiating the laser beam, 15
A laser-melted recrystallized layer was formed in stripes with a width of −20 μm.
この様にして得られた再結晶化層においては、グレイン
ウオールが極端に少なく、グレインサイズの巨大化が起
こっていることが分かった。It was found that in the recrystallized layer obtained in this manner, there were extremely few grain walls, and the grain size was enlarged.
本発明のレーザー溶融再結晶化方法は、レーザー光照射
により生じたシリコンの溶融領域が窒化シリコン薄膜を
介して接するポリエチレングリコールの液膜により、放
熱面積の大きい表面方向から冷却が行えるような構成に
なっているため、更にレーザー光照射による局所的な加
熱をポリエチレングリコールの液膜面に分散させ、冷却
効果が素子の全面に拡散して緩和されるので、溶融領域
の側面方向への熱放散が主となる従来法で生じる側面方
向からのグレインの成長が抑制される。The laser melting recrystallization method of the present invention has a structure in which the molten region of silicon generated by laser beam irradiation is cooled from the surface direction where the heat radiation area is large by a polyethylene glycol liquid film in contact with the silicon nitride thin film. Furthermore, the local heating caused by laser beam irradiation is dispersed on the surface of the polyethylene glycol liquid film, and the cooling effect is diffused and alleviated over the entire surface of the element, reducing heat dissipation in the lateral direction of the molten region. Grain growth from the lateral direction, which occurs in the main conventional method, is suppressed.
第２図は、本発明を適用したシリコン薄膜のレーザー溶
融再結晶化方法の第２の実施例を示す膜の断面図である
。シリコン基板結晶２１上への二酸化シリコン薄膜２２
、シリコン多結晶薄膜２３、窒化シリコン薄膜２４の形
成方法は、第１の実施例と同じである。本実施例では窒
化シリコン薄膜２４の上に、減圧ＣＶＤ法により、二酸
化シリコン薄膜２５を１００ｎｒｎの膜厚で形成した。FIG. 2 is a sectional view of a film showing a second embodiment of a method for laser melting and recrystallization of a silicon thin film to which the present invention is applied. Silicon dioxide thin film 22 on silicon substrate crystal 21
The methods of forming the silicon polycrystalline thin film 23 and the silicon nitride thin film 24 are the same as in the first embodiment. In this example, a silicon dioxide thin film 25 with a thickness of 100 nrn was formed on the silicon nitride thin film 24 by low pressure CVD.
更に、本実施例では、ポリエチレングリコール２６でサ
ンプルの表面を覆った後に、ポリエチレングリコールの
表面に接して、光学ガラス板２７を設置した。ポリエチ
レングリコールは、窒化シリコンとにより、二酸化シリ
コンとの方が濡れ性が良いこと、および光学ガラス板の
設置により二液状のポリエチレングリコール層の厚さを
均一にできたことが原因となり、第１の実施例における
効果を損なうことなく、実験の再現性を著しく改善でき
た。Furthermore, in this example, after covering the surface of the sample with polyethylene glycol 26, an optical glass plate 27 was placed in contact with the surface of the polyethylene glycol. Polyethylene glycol has better wettability with silicon dioxide than with silicon nitride, and the thickness of the two-component polyethylene glycol layer can be made uniform by installing an optical glass plate. The reproducibility of experiments was significantly improved without impairing the effects in the examples.
第１図は、本発明を適用したシリコン薄膜のレーデ−溶
融再結晶化方法の第１の実施例を示す断面図、
第２図は、本発明を適用したシリコン薄膜のレーザー溶
融再結晶化方法の第２の実施例を示す断面図、および
第３図は従来の半導体薄膜の溶融再結晶化の方法を示す
図である。
（符号の説明）
１１．２１・・・シリコン基板結晶、
１２．２２．２５・・・二酸化シリコン薄膜、１３・・
・シリコン多結晶薄膜、
１４．２４・・・窒化シリコン薄膜、
１５．２６・・・ポリエチレングリコール、１７・・・
光学ガラス、
２３・・・シリコン薄膜、
４１．４３・・・誘電体、
４２・・・半導体薄膜、
１６．２８．４４・・・溶融部、
４５・・・溶融領域側面、
４６・・・未溶融半導体薄膜領域。
レーサー光
、°、°、゛ゾ、゛イｉ、゛、°°゛・ ゛ パ８ 二
、゛パ、°・°、°、ぐ：゛パ ″レープ２光FIG. 1 is a sectional view showing a first embodiment of a method for laser melting and recrystallization of a silicon thin film to which the present invention is applied. FIG. 2 is a cross-sectional view showing a method for laser melting and recrystallization of a silicon thin film to which the present invention is applied. FIG. 3 is a cross-sectional view showing the second embodiment of the present invention, and FIG. 3 is a diagram showing a conventional method of melting and recrystallizing a semiconductor thin film. (Explanation of symbols) 11.21...Silicon substrate crystal, 12.22.25...Silicon dioxide thin film, 13...
・Silicon polycrystalline thin film, 14.24...Silicon nitride thin film, 15.26...Polyethylene glycol, 17...
Optical glass, 23...Silicon thin film, 41.43...Dielectric material, 42...Semiconductor thin film, 16.28.44...Melted part, 45...Melted region side surface, 46...Not yet Molten semiconductor thin film area. Racer light, °, °, ゛zo, ゛iii, ゛, °°゛・゛ Pa 8 2, ゛pa, °・°, °, gu:゛pa ″Rep 2 light
Claims (1)
させた後、冷却してこの半導体を再結晶化する方法にお
いて、薄膜構造の表面に冷却媒体を設けた状態で前記レ
ーザー光を照射することを特徴とする半導体薄膜のレー
ザー溶融再結晶化方法。In a method of irradiating a semiconductor thin film with a laser beam, melting the semiconductor, and then cooling the semiconductor to recrystallize the semiconductor, the laser beam may be irradiated with a cooling medium provided on the surface of the thin film structure. Characteristic method for laser melting and recrystallization of semiconductor thin films.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63053289A JP2631121B2 (en) | 1988-03-07 | 1988-03-07 | Laser melting recrystallization method of semiconductor thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63053289A JP2631121B2 (en) | 1988-03-07 | 1988-03-07 | Laser melting recrystallization method of semiconductor thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01227423A true JPH01227423A (en) | 1989-09-11 |
| JP2631121B2 JP2631121B2 (en) | 1997-07-16 |
Family
ID=12938562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63053289A Expired - Lifetime JP2631121B2 (en) | 1988-03-07 | 1988-03-07 | Laser melting recrystallization method of semiconductor thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2631121B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5077235A (en) * | 1989-01-24 | 1991-12-31 | Ricoh Comany, Ltd. | Method of manufacturing a semiconductor integrated circuit device having SOI structure |
| US5173446A (en) * | 1988-06-28 | 1992-12-22 | Ricoh Company, Ltd. | Semiconductor substrate manufacturing by recrystallization using a cooling medium |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144785A (en) * | 1984-08-08 | 1986-03-04 | Sony Corp | Manufacture of thin film of semiconductor single crystal |
-
1988
- 1988-03-07 JP JP63053289A patent/JP2631121B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6144785A (en) * | 1984-08-08 | 1986-03-04 | Sony Corp | Manufacture of thin film of semiconductor single crystal |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5173446A (en) * | 1988-06-28 | 1992-12-22 | Ricoh Company, Ltd. | Semiconductor substrate manufacturing by recrystallization using a cooling medium |
| US5077235A (en) * | 1989-01-24 | 1991-12-31 | Ricoh Comany, Ltd. | Method of manufacturing a semiconductor integrated circuit device having SOI structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2631121B2 (en) | 1997-07-16 |
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