JPH03204923A - Manufacture of compound semiconductor crystal - Google Patents
Manufacture of compound semiconductor crystalInfo
- Publication number
- JPH03204923A JPH03204923A JP34448989A JP34448989A JPH03204923A JP H03204923 A JPH03204923 A JP H03204923A JP 34448989 A JP34448989 A JP 34448989A JP 34448989 A JP34448989 A JP 34448989A JP H03204923 A JPH03204923 A JP H03204923A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- melt
- compound semiconductor
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 117
- 150000001875 compounds Chemical class 0.000 title claims abstract description 32
- 239000004065 semiconductor Substances 0.000 title claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 26
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 239000012071 phase Substances 0.000 claims description 12
- 239000007791 liquid phase Substances 0.000 claims description 6
- 239000000470 constituent Substances 0.000 claims description 5
- 238000001947 vapour-phase growth Methods 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims 1
- 239000000155 melt Substances 0.000 abstract description 27
- 229910052594 sapphire Inorganic materials 0.000 abstract description 12
- 239000010980 sapphire Substances 0.000 abstract description 12
- 229910004613 CdTe Inorganic materials 0.000 abstract 3
- 239000004973 liquid crystal related substance Substances 0.000 abstract 2
- 238000001816 cooling Methods 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 239000002023 wood Substances 0.000 description 22
- RPPBZEBXAAZZJH-UHFFFAOYSA-N cadmium telluride Chemical compound [Te]=[Cd] RPPBZEBXAAZZJH-UHFFFAOYSA-N 0.000 description 17
- 229910052714 tellurium Inorganic materials 0.000 description 7
- 229910052793 cadmium Inorganic materials 0.000 description 6
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 5
- 229910052753 mercury Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
水銀を含む化合物半導体結晶の製造方法に関し、基板上
に水銀を含む化合物半導体結晶を、その結晶を構成する
原子の組成を変化させて多層構造に積層するのを目的と
し、
基板上に形成すべき化合物半導体結晶の構成原子を含む
結晶層を、前記基板上に予め形成した後、該結晶層を形
成した基板と該基板上に形成すべき化合物半導体結晶を
構成する原子で構成されたエピタキシャル成長用メルト
とを封管内に設置し、該封管を加熱して、前記結晶層と
、前記エピタキシャル成長用メルトを溶融した溶融メル
トと、該溶融メルトより蒸発した蒸気の三相平衡による
等温気相成長方法で前記結晶層を化合物半導体結晶に変
換した後、
前記溶融メルトの温度を降下させて、該溶融メルトに前
記化合物半導体結晶を接触させて液相エピタキシャル成
長方法で、該化合物半導体結晶上に該結晶と組成の異な
る第２の化合物半導体結晶を積層形成することで構成す
る。[Detailed Description of the Invention] [Summary] A method for manufacturing a compound semiconductor crystal containing mercury, in which compound semiconductor crystals containing mercury are stacked on a substrate in a multilayer structure by changing the composition of atoms constituting the crystal. For the purpose of this, a crystal layer containing the constituent atoms of a compound semiconductor crystal to be formed on a substrate is formed in advance on the substrate, and then the substrate on which the crystal layer is formed and the compound semiconductor crystal to be formed on the substrate are formed. A melt for epitaxial growth composed of atoms constituting the above is placed in a sealed tube, and the sealed tube is heated to produce a molten melt obtained by melting the crystal layer and the melt for epitaxial growth, and vapor evaporated from the molten melt. After converting the crystal layer into a compound semiconductor crystal by an isothermal vapor phase growth method using a three-phase equilibrium, the temperature of the molten melt is lowered, and the compound semiconductor crystal is brought into contact with the molten melt, and then the crystal layer is converted into a compound semiconductor crystal by a liquid phase epitaxial growth method. , a second compound semiconductor crystal having a composition different from that of the compound semiconductor crystal is laminated on the compound semiconductor crystal.
本発明は水銀を含む化合物半導体結晶の製造方法に係り
、特に該化合物半導体結晶を構成する原子の組成を変化
させた結晶を多層構造に積層形成する方法に関する。The present invention relates to a method for manufacturing a compound semiconductor crystal containing mercury, and more particularly to a method for forming a multilayer structure of crystals in which the composition of atoms constituting the compound semiconductor crystal is changed.
赤外線検知素子の形成材料として、サファイア基板上に
形成したカドミウムテルル（ＣｄＴｅ）のような化合物
半導体結晶上に、エネルギーバンドギャップの狭い水銀
・カドミウム・テルル（Ｈｇｌ−ｘＣｄＸＴｅ）の化合
物半導体結晶をエピタキシャル成長して形成した基板が
用いられている。As a material for forming an infrared sensing element, a compound semiconductor crystal of mercury-cadmium-tellurium (Hgl-xCdXTe) with a narrow energy band gap is epitaxially grown on a compound semiconductor crystal such as cadmium tellurium (CdTe) formed on a sapphire substrate. A substrate formed using the same method is used.
このようなＩ（ｇ、ＸＣｄ工Ｔｅの結晶は、Ｘ値が異な
ると、その結晶のエネルギーバンドギャップも異なり、
該結晶で製造した赤外線検知素子で検知できる赤外線の
波長も異なるようになる。In such a crystal of I(g,
The wavelength of infrared rays that can be detected by an infrared sensing element made of the crystal also differs.
また該ＨｇＩ−ｘ ｃｄ、 Ｔｅの結晶の厚さが薄い程
、高感度に赤外線を検知するとされている。It is also said that the thinner the HgI-x cd, Te crystal is, the more sensitive it is to detect infrared rays.
ところでＣｄＴｅ結晶上にＨｇｒ−ｘ Ｃ（！＋ Ｔｅ
結晶を例えば液相エピタキシャル成長方法を用いて薄く
形成すると、ＣｄＴｅ結晶を構成する原子とｌ（ｇ＋□
Ｃｄ、 Ｔｅ結晶を構成する原子との間で相互拡散を生
じるようになり、所望の組成のＨｇ１−ｘ Ｃｄｘ Ｔ
ｅの結晶が得られない。By the way, Hgr-x C(!+ Te
When a crystal is formed thinly using, for example, a liquid phase epitaxial growth method, the atoms constituting the CdTe crystal and l(g+□
Interdiffusion occurs between Cd and the atoms constituting the Te crystal, resulting in a desired composition of Hg1-x Cdx T
Crystals of e cannot be obtained.
そこで、最近はＣｄＴｅ結晶上にバッファ層として高Ｘ
値のＨｇｌ−ｘ ＣｄＸ Ｔｅ結晶を形成した後、更に
その上に低Ｘ値のＨｇｌ−ｘ Ｃｄｘ Ｔｅ結晶を薄く
形成する技術の開発が望まれている。Therefore, recently, high-X
It is desired to develop a technique for forming a Hgl-x Cdx Te crystal with a low X value and then forming a thin Hgl-x Cdx Te crystal with a low X value thereon.
従来、このようなＣｄＴｅ結晶上に高Ｘ値のＨｇｌ−ｘ
Ｃｄｘ Ｔｅ結晶を成長した後、その上に低ｘｊＫＨｇ
＋−ｘＣｄ、 Ｔｅ結晶を成長する方法は、第３図（ａ
）に示すように、水６ｍ （Ｈｇ） とカドミウム（Ｃ
ｄ）とテルル（Ｔｅ）とを所定重量秤量し、溶融後、固
化して形成したＨｇｌ−ｘ ｃｄＸ Ｔｅ（に＝０．３
）のエピタキシャル成長用メルト（合金）■と、基板設
置治具２に設置したＣｄＴｅ結晶を形成したサファイア
基板３とを、前記エピタキシャル成長用メルト１とＣｄ
Ｔｅ結晶を形成したサファイア基板３とが対向するよう
に封管４内に設置する。Conventionally, Hgl-x with a high X value was deposited on such a CdTe crystal.
After growing Cdx Te crystal, low xj KHg on top of it.
The method for growing +-xCd, Te crystals is shown in Figure 3 (a
), 6m of water (Hg) and cadmium (C
Hgl-x cdX Te (=0.3
) and the sapphire substrate 3 on which a CdTe crystal is formed, which is placed on the substrate installation jig 2, are placed between the epitaxial growth melt 1 and Cd
It is placed in a sealed tube 4 so that it faces a sapphire substrate 3 on which a Te crystal is formed.
そして上記封管４を加熱炉内の炉芯管（図示せず）の内
部に挿入し、第３図（ｂ）に示すように、前記エピタキ
シャル成長用メルト１を溶融して該溶融したメルトに、
前記封管４を回転させてＣｄＴｅ結晶を形成したサファ
イア基板３に接触させ、該溶融したエピタキシャル成長
用メルト１の温度を降下させながら基板上に第１層のＨ
ｇ１−ｘ Ｃｄ、 Ｔｅ（ｘ＝０．３）を液相エピタキ
シャル成長する。Then, the sealed tube 4 is inserted into a furnace core tube (not shown) in a heating furnace, and as shown in FIG. 3(b), the epitaxial growth melt 1 is melted and the melted melt is
The sealed tube 4 is rotated and brought into contact with the sapphire substrate 3 on which a CdTe crystal is formed, and a first layer of H is deposited on the substrate while lowering the temperature of the melted epitaxial growth melt 1.
g1-x Cd, Te (x=0.3) are grown by liquid phase epitaxial growth.
次いで上記封管４を割って基板を取り出し、図示しない
が、再び他の封管内に前記Ｈｇ＋−ｘ Ｃｄｘ Ｔｅ（
ｘ＝０．３）を成長したサファイア基板と、ｘ ＝０．
２のＨｇｌ−ｘ Ｃｄｚ Ｔｅのエピタキシャル成長用
メルトとを封入し、前記したようにして、第１層のＨｇ
ｌ−エＣｄ、 Ｔｅ（ｘ＝０．３）の結晶を形成したサ
ファイア基板上にｘ ＝０．２のＨｇＨ−ｘＣｄ、 Ｔ
ｅの結晶を第２層の結晶として液相エピタキシャル成長
により形成していた。Next, the sealed tube 4 is broken, the substrate is taken out, and the Hg+-x Cdx Te(
A sapphire substrate on which x = 0.3) was grown, and a sapphire substrate on which x = 0.3) was grown.
The Hgl-x Cdz Te epitaxial growth melt of 2.
HgH-xCd with x = 0.2, T
The crystal of e was used as the second layer crystal and was formed by liquid phase epitaxial growth.
然し、上記した従来の方法では第１層のＨｇｌ−９Ｃｄ
、 Ｔｅの結晶を形成したサファイア基板３を取り出ず
際に、−々封管４を破損しなければ成らない問題があり
、封管の損失が大である問題がある。However, in the conventional method described above, Hgl-9Cd in the first layer
, There is a problem in that the sealed tube 4 must be damaged when the sapphire substrate 3 on which Te crystals are formed is not removed, and there is a problem in that the loss of the sealed tube is large.
また封管を破損してエピタキシャル結晶を形成した基板
を取り出す際に、該基板が大気に触れて汚染する問題が
あり、工程が煩雑で容器を破損する必要があり問題が多
い。Furthermore, when the sealed tube is broken and the substrate on which the epitaxial crystal has been formed is taken out, there is a problem that the substrate comes into contact with the atmosphere and becomes contaminated, and the process is complicated and the container needs to be damaged, which causes many problems.
また組成の異なった第２層のエピタキシャル結晶成長用
のＨｇｌ−ｘ Ｃｄｇ Ｔｅのメルトを作り、第１層の
エピタキシャル結晶成長用のＨｇｌ−ｘ ＣｄつＴｅの
メルトと交換する必要があり、第１層のエピタキシャル
結晶の成長の際に使用したメルトは廃棄する等、材料の
損失が大きい。It is also necessary to create a melt of Hgl-x Cdg Te for epitaxial crystal growth of the second layer with a different composition and replace it with a melt of Hgl-x Cd Te for epitaxial crystal growth of the first layer. The melt used to grow the epitaxial crystal of the layer must be discarded, resulting in a large loss of material.
本発明は上記した問題点を解決し、封管を破損すること
なく、またエピタキシャル結晶の成長用メルトを交換す
ることなく、簡単な方法でＣｄＴｅ結晶を形成したサフ
ァイア基板上にＨｇ＋−ｘ Ｃｄｘ Ｔｅの結晶を水銀
の組成比を変動させた状態で多層に形成する方法の提供
を目的とする。The present invention solves the above-mentioned problems, and produces Hg+-x Cdx Te on a sapphire substrate on which a CdTe crystal is formed by a simple method without damaging the sealed tube or replacing the melt for growing the epitaxial crystal. The object of the present invention is to provide a method for forming multilayer crystals with varying composition ratios of mercury.
上記目的を達成する本発明の方法は、基板上に形成すべ
き化合物半導体結晶の構成原子を含む結晶層を、前記基
板上に予め形成した後、該結晶層を形成した基板と該基
板上に形成すべき化合物半導体結晶を構成する原子で構
成されたエピタキシャル成長用メルトとを封管内に設置
し、該封管を加熱して、前記結晶層と、前記エピタキシ
ャル成長用メルトを溶融した溶融メルトと、該溶融メル
トより蒸発した蒸気の三相平衡による等温気相成長方法
で前記結晶層を化合物半導体結晶に変換した後、
前記溶融メルトの温度を降下させて、該溶融メルトに前
記化合物半導体結晶を接触させて液相エピタキシャル成
長方法で、該化合物半導体結晶上に該結晶と組成の異な
る第２の化合物半導体結晶を積層形成することで構成す
る。The method of the present invention for achieving the above object includes forming a crystal layer containing constituent atoms of a compound semiconductor crystal to be formed on a substrate in advance on the substrate, and then disposing the substrate on which the crystal layer is formed and the substrate. A melt for epitaxial growth composed of atoms constituting a compound semiconductor crystal to be formed is placed in a sealed tube, and the sealed tube is heated to melt the crystal layer and the melt for epitaxial growth; After converting the crystal layer into a compound semiconductor crystal by an isothermal vapor phase growth method using three-phase equilibrium of vapor evaporated from the molten melt, the temperature of the molten melt is lowered, and the compound semiconductor crystal is brought into contact with the molten melt. A second compound semiconductor crystal having a composition different from that of the compound semiconductor crystal is layered on the compound semiconductor crystal using a liquid phase epitaxial growth method.
ＣｄＴｅ結晶を形成したサファイア基板と、Ｈｇ＋−ｘ
Ｃｄ、 Ｔｅのメルトとを、該ＣｄＴｅ結晶とメルトと
が接触しない状態で封管内に封止し、該封管を所定の温
度に加熱して上記メルトを溶融させ、基板と、溶融した
メルトと、溶融メルトからの蒸気の三相平衡の等温気相
成長方法で気相成長すると、基板上にＨｇ＋−ｘ Ｃｄ
ＸＴｅのエピタキシャル結晶が成長する。そして、この
エピタキシャル結晶の構成原子とＣｄＴｅ結晶の構成原
子との相互拡散によってＣｄＴｅ結晶がＨｇ＋−ｘ Ｃ
ｄｘ Ｔｅの結晶に変換され、このようにしてＣｄＴｅ
結晶をＨｇ＋−ｘ Ｃｄｘ Ｔｅ結晶に変換してＨｇ＋
−ｘ Ｃｄ、 Ｔｅ結晶を形成することを本出願人は特
願平１−１８７９９０号に於いて提案しており、この方
法を用いて例えばサファイア基板に形成したＣｄＴｅ結
晶をエピタキシャル成長用メルトのＨｇ１−ｘ Ｃｄｘ
Ｔｅの結晶と同一組成の）Ｉｇ＋−、Ｃｄ、 Ｔｅ結
晶に変換形成する。A sapphire substrate formed with CdTe crystal and Hg+-x
A melt of Cd and Te is sealed in a sealed tube without contact between the CdTe crystal and the melt, and the sealed tube is heated to a predetermined temperature to melt the melt, and the substrate and the melt are combined. , Hg + -x Cd is grown on the substrate by vapor phase growth using a three-phase equilibrium isothermal vapor phase growth method of vapor from a molten melt.
An epitaxial crystal of XTe is grown. Then, due to mutual diffusion between the constituent atoms of this epitaxial crystal and the constituent atoms of the CdTe crystal, the CdTe crystal becomes Hg+-x C
dx Te crystal, and in this way CdTe
Convert the crystal to Hg+-x Cdx Te crystal to Hg+
The present applicant has proposed in Japanese Patent Application No. 1-187990 that -x Cd, Te crystals are formed, and using this method, for example, a CdTe crystal formed on a sapphire substrate can be formed with Hg1- of a melt for epitaxial growth. x Cdx
The crystals are converted into Ig+-, Cd, and Te crystals (having the same composition as Te crystals).
第２図は、水銀、カドミウム、テルルのメルトの三相平
衡状態図で文献（Ｊｏｕｒｎａｌ ｏｆ Ｅｌｅｃｔｏ
ｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ｖｏ＋ ９ （１９
８０） ）によるもので、横軸はＨｇ、 Ｃｄ ＸＴ
ｅに於けるＣｄの原子分率、縦軸はＨｇの原子分率であ
り、曲線３１．３２，３３．３４．３５は温度が４５０
℃、５００℃、５５０℃、６００℃、６５０℃で三相平
衡となるＨｇ＋−ｘ Ｃｄ工Ｔｅの液相化温度曲線であ
り、曲線４１，４２，４３，４４，４５．４６，４７．
４８は三相平衡となる時のＨｇ＋−ｘ Ｃｄｘ Ｔｅ結
晶の固相のＸ値を示す曲線である。Figure 2 is a three-phase equilibrium phase diagram of a melt of mercury, cadmium, and tellurium, as described in the literature (Journal of Elect.
ronic Materials vo+ 9 (19
80) ), the horizontal axis is Hg, Cd XT
The atomic fraction of Cd at e, the vertical axis is the atomic fraction of Hg, and the curves 31.32, 33.34.35 show that the temperature is 450
℃, 500℃, 550℃, 600℃, and 650℃ are liquidus temperature curves of Hg+-xCd-Te which have three-phase equilibrium, and curves 41, 42, 43, 44, 45. 46, 47.
48 is a curve showing the X value of the solid phase of the Hg+-x Cdx Te crystal when three-phase equilibrium is achieved.
この第２図に示すＨｇ＋−ｘ Ｃｄｘ Ｔｅの三相平衡
状態図により、上記Ｈｇ＋−ｘ Ｃｄｘ Ｔｅ （ｘ
＝０．３）の溶融メルト（曲線４３に示す固相値ｘ ＝
０．３）を、曲線３３に示す５５０℃のＨｇ＋−ｘ Ｃ
ｄｇ Ｔｅの液相化温度曲線の温度から曲！３２に示す
５００°ＣのＨｇ＋−ｘ Ｃｄｘ Ｔｅの液相化温度曲
線の温度迄冷却する。According to the three-phase equilibrium state diagram of Hg+-x Cdx Te shown in FIG. 2, the above-mentioned Hg+-x Cdx Te (x
=0.3) (solidus value x = shown in curve 43)
0.3) at 550°C shown in curve 33.
A song from the temperature of the liquidus temperature curve of dg Te! It is cooled to the temperature of the liquidus temperature curve of Hg+-x Cdx Te of 500°C shown in No. 32.
すると、Ｈｇ１−ｘ ｃｃｉ、 Ｔｅのメルトの中のＣ
ｄ原子が偏析してＨｇ＋−ｘ ＣｄＸ Ｔｅの溶融メル
トの固相値は固相値曲線４２に示す固相値ｘ ＝０．２
１となり、この溶融メルトに前記第１層の）Ｉｇｌ−ｘ
Ｃｄ、１Ｔｅ（ｘ＝０．３ ）の結晶を接触させると、
その上に第２層のＨｇ＋−ｘＣｄ、 Ｔｅ （ｘ ＝０
．２１）のＨｇ＋−ｘ Ｃｄｘ Ｔｅ結晶が形成され、
封管を破損することなく、またエピタキシャル成長用メ
ルトを交換することなくｘ値の異なるＨｇ＋−ｘ ｃｄ
、 Ｔｅ結晶を多層構造に形成することができる。Then, Hg1-x cci, C in the Te melt
The solidus value of the molten melt of Hg+-x CdX Te due to the segregation of d atoms is the solidus value x = 0.2 shown in the solidus value curve 42.
1, and this molten melt contains Igl-x of the first layer.
When Cd and 1Te (x=0.3) crystals are brought into contact,
On top of that, a second layer of Hg+-xCd, Te (x = 0
．． 21) Hg+-x Cdx Te crystals are formed,
Hg+-x cd with different x values without damaging the sealed tube or replacing the epitaxial growth melt
, Te crystal can be formed into a multilayer structure.
以下、図面を用いて本発明の一実施例につき詳細に説明
する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第１図（ａ）に示すように、サファイア基板１１上にＭ
ＯＣＶＤ法、ホントウオールエピタキシャル成長方法、
或いは分子線エピタキシャル成長方法等を用いて、Ｃｄ
Ｔｅ結晶層１２を４．５μｍの厚さにエピタキシャル成
長する。As shown in FIG. 1(a), M
OCVD method, real wall epitaxial growth method,
Alternatively, using a molecular beam epitaxial growth method etc., Cd
A Te crystal layer 12 is epitaxially grown to a thickness of 4.5 μm.
次いで第１図（ｂｌに示すように、このＣｄＴｅ結晶層
１２を形成した基板１１と組成が、Ｈｇｏ、 ｚｓｓｃ
ｄｏ、 ｏ＋ ｅ＋Ｔｅ。、７４．のメルト１３とを封
管１４内に上記メルトと基板とを所定の距離を隔てて対
向配置して封入し、該封管１４を５５０℃の温度に加熱
する。Next, as shown in FIG. 1 (bl), the composition of the substrate 11 on which this CdTe crystal layer 12 was formed was Hgo,
do, o+e+Te. , 74. The melt 13 is sealed in a sealed tube 14 with the melt and the substrate facing each other at a predetermined distance, and the sealed tube 14 is heated to a temperature of 550.degree.
上記メルト１３は第２図に示すように、曲線３３に示す
５５０℃の液相化温度に加熱溶融した場合は、そのメル
トの有するＨｇ原子とＣｄ原子の原子分率より、その同
相値ｘ ＝０．３となりＡ点に示す位置となる。As shown in FIG. 2, when the melt 13 is heated and melted to the liquidus temperature of 550°C shown in the curve 33, the in-phase value x = 0.3, resulting in the position shown at point A.
そして上記５５０°Ｃの温度で７２時間保持すると、第
１図ｆａ）に示されたＣｄＴｅ結晶１２は、第１図ｆｂ
）で示されるように厚さが１５．ｃｒｍのＨｇ１−ＸＣ
ｄＸＴｅ（ｘ＝０．３）結晶１５に変換される。When kept at the above temperature of 550°C for 72 hours, the CdTe crystal 12 shown in Fig. 1fa) becomes as shown in Fig. 1fb
), the thickness is 15. crm Hg1-XC
dXTe (x=0.3) crystal 15.
つまり第１図（ａ）に示した厚さが４．５ μｍのＣｄ
Ｔｅ結晶層１２が、ｘ ＝０．３のｔ（ｇ、−ＸＣｄｘ
Ｔｅ結晶に変換された後、更にその上にｘ ＝０．３の
ＨｇＩ−ｘ Ｃｄｘ Ｔｅ結晶が気相エピタキシャル成
長して形成され、全体として第１図（ｂｌに示す厚さが
１５μｍのＨｇＩ−ｗ ＣｄｘＴｅ（ｘ＝０．３）結晶
１５が形成される。In other words, the Cd with a thickness of 4.5 μm shown in Figure 1(a)
The Te crystal layer 12 has t(g, -XCdx
After being converted into a Te crystal, a HgI-x Cdx Te crystal with A CdxTe (x=0.3) crystal 15 is formed.
次いで第２図に示すように、前記したＨｇｏ、 ｚ３ｓ
ｃｄＯ，０Ｉ８３ＴｅＯ，フａ７のメルト１３を曲線３
２に示す５００℃の液相化曲線上冷却すると、そのメル
ト１３の組成はＢ点の位置になり、曲線４２に示すｘ
＝０．２０固相線の近傍に来るようになり、その時のメ
ルトはＨｇ ＋ −ｘ Ｃｄｘ Ｔｅ （ｘ ＝Ｏ−２
１） となる。そしてこのメルトに第１図（Ｃ１に示す
ように、基板を接触させると第１層のＨｇＩ−ｘ Ｃｄ
ＸＴｅ（ｘ＝０．３）結晶１５上に第２層のＨｇＩ−ｘ
Ｃｄｘ Ｔｅ（ｘ＝０．２１）結晶１６が形成され、
このようにして封管を破ることなく、かつエピタキシャ
ル成長用メルトを交換することなくＸ値の異なるＨｇＩ
−８ＣｄＸＴｅ結晶が積層形成できる。Next, as shown in FIG. 2, the above-mentioned Hgo, z3s
cdO, 0I83TeO, melt 13 of f a7 is curve 3
When the melt 13 is cooled on the 500°C liquidus curve shown in 2, the composition becomes at point B, and the composition becomes x as shown in curve 42.
= 0.20 comes to be near the solidus line, and the melt at that time is Hg + -x Cdx Te (x = O-2
1) becomes. When a substrate is brought into contact with this melt as shown in Figure 1 (C1), the first layer of HgI-x Cd
A second layer of HgI-x on the XTe (x=0.3) crystal 15
CdxTe (x=0.21) crystal 16 is formed,
In this way, HgI with different X values can be grown without breaking the sealed tube or replacing the epitaxial growth melt.
-8CdXTe crystals can be stacked.
以上の説明から明らかなように本発明によれば封管を破
損することなく、またＨｇ、−ｘ Ｃｄｘ Ｔｅのエピ
タキシャル成長用メルトを交換することなく、ＣｄＴｅ
結晶上に組成の異なるＨｇ＋□Ｃｄｘ Ｔｅの結晶を積
層形成することができ、この材料を用いて赤外線検知素
子を形成すると高性能な赤外線検知素子が得られる効果
がある。As is clear from the above description, according to the present invention, CdTe can be grown without damaging the sealed tube and without replacing the melt for epitaxial growth of Hg, -x Cdx Te.
Crystals of Hg+□CdxTe having different compositions can be layered on a crystal, and when an infrared sensing element is formed using this material, a high-performance infrared sensing element can be obtained.
第１図＋ａｌより第１図（Ｃ１迄は、本発明の方法の工
程を示す断面図、
第２図はＨｇ１．□ＸＣｄ、 Ｔｅの三相平衡状態図、
第３図（ａｌより第３図山）迄は、従来の方法の工程を
示す断面図である。
図において、
１１はサファイア基板、１２はＣｄＴｅ結晶層、１３は
エピタキシャル成長用メルト、１４は封管、１５はＨｇ
Ｉ−ｘＣｄＸＴｅ（ｘ＝０．３）結晶、１６はＨｇＩ−
ｘ ｃａ、 Ｔｅ（ｘ＝０．２１）結晶、３１．３２，
３３，３４．３５は、三相平衡となるＨｇＩ−ｘＣｃＬ
Ｔｅの液相化温度曲線、４Ｌ４２，４３，４４，４５
，４６．４７４８は三相平衡となる時のＨｇ１−ｘ Ｃ
ｄｘ Ｔｅ結晶のＸ値を示す曲線である。
（Ｃ）
本発明、１太珪偽工薪１ネＴ杵飴図
第１図
Ｈ９４す＃卆−−中
ＴＱ）
（１
（ｂ）
従束ｍｌわｂ１社ｅネオ村酌ｍ
第３図Figure 1 from Figure 1+al (up to C1 is a sectional view showing the steps of the method of the present invention, Figure 2 is a three-phase equilibrium state diagram of Hg1.□XCd, Te,
FIG. 3 (from al to FIG. 3 mountain) is a cross-sectional view showing the steps of the conventional method. In the figure, 11 is a sapphire substrate, 12 is a CdTe crystal layer, 13 is a melt for epitaxial growth, 14 is a sealed tube, and 15 is a Hg
I-xCdXTe (x=0.3) crystal, 16 is HgI-
x ca, Te (x=0.21) crystal, 31.32,
33, 34.35 is HgI-xCcL, which is a three-phase equilibrium
Liquidus temperature curve of Te, 4L42, 43, 44, 45
, 46.4748 is Hg1-x C at three-phase equilibrium
dx This is a curve showing the X value of Te crystal. (C) The present invention, 1 large piece of fake firewood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of wood, 1 piece of firewood
Claims (1)
の構成原子を含む結晶層（１２）を前記基板上に予め形
成した後、該結晶層（１２）を形成した基板（１１）と
該基板上に形成すべき化合物半導体結晶（１５）を構成
する原子で構成されたエピタキシャル成長用メルト（１
３）とを封管（１４）内に設置し、該封管（１４）を加
熱して、前記結晶層（１２）と、前記エピタキシャル成
長用メルト（１３）を溶融した溶融メルトと、該溶融メ
ルトより蒸発した蒸気の三相平衡による等温気相成長方
法で前記結晶層（１２）を化合物半導体結晶（１５）に
変換した後、前記溶融メルトの温度を降下させて、該溶
融メルトに前記化合物半導体結晶（１５）を接触させて
液相エピタキシャル成長方法で、該化合物半導体結晶（
１５）上に該結晶と組成の異なる第２の化合物半導体結
晶（１６）を積層形成することを特徴とする化合物半導
体結晶の製造方法。Compound semiconductor crystal (15) to be formed on substrate (11)
After forming a crystal layer (12) containing constituent atoms on the substrate in advance, a substrate (11) on which the crystal layer (12) is formed and a compound semiconductor crystal (15) to be formed on the substrate are formed. Melt for epitaxial growth composed of atoms (1
3) is placed in a sealed tube (14), and the sealed tube (14) is heated to melt the crystal layer (12) and the epitaxial growth melt (13); After converting the crystal layer (12) into a compound semiconductor crystal (15) by an isothermal vapor phase growth method using three-phase equilibrium of evaporated vapor, the temperature of the molten melt is lowered and the compound semiconductor is added to the molten melt. The compound semiconductor crystal (15) is grown by a liquid phase epitaxial growth method by bringing the crystal (15) into contact with each other.
15) A method for manufacturing a compound semiconductor crystal, comprising laminating a second compound semiconductor crystal (16) having a different composition from that of the crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34448989A JPH03204923A (en) | 1989-12-29 | 1989-12-29 | Manufacture of compound semiconductor crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34448989A JPH03204923A (en) | 1989-12-29 | 1989-12-29 | Manufacture of compound semiconductor crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03204923A true JPH03204923A (en) | 1991-09-06 |
Family
ID=18369662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34448989A Pending JPH03204923A (en) | 1989-12-29 | 1989-12-29 | Manufacture of compound semiconductor crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03204923A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251726A (en) * | 1991-10-15 | 1993-09-28 | Santa Barbara Res Center | Photosensitive device including contact provided with compositional gradient and recess for trapping minority carriers and producing method therefor |
| CN1096966C (en) * | 1997-07-01 | 2002-12-25 | 住友橡胶工业株式会社 | Heavy load radial tire |
-
1989
- 1989-12-29 JP JP34448989A patent/JPH03204923A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05251726A (en) * | 1991-10-15 | 1993-09-28 | Santa Barbara Res Center | Photosensitive device including contact provided with compositional gradient and recess for trapping minority carriers and producing method therefor |
| CN1096966C (en) * | 1997-07-01 | 2002-12-25 | 住友橡胶工业株式会社 | Heavy load radial tire |
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