JPS63137436A - Liquid phase epitaxial growing system - Google Patents
Liquid phase epitaxial growing systemInfo
- Publication number
- JPS63137436A JPS63137436A JP28482786A JP28482786A JPS63137436A JP S63137436 A JPS63137436 A JP S63137436A JP 28482786 A JP28482786 A JP 28482786A JP 28482786 A JP28482786 A JP 28482786A JP S63137436 A JPS63137436 A JP S63137436A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- holder
- melt
- epitaxial
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007791 liquid phase Substances 0.000 title claims abstract description 14
- 239000000758 substrate Substances 0.000 claims abstract description 75
- 239000013078 crystal Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 10
- 239000010453 quartz Substances 0.000 abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 230000002093 peripheral effect Effects 0.000 abstract description 12
- 230000002159 abnormal effect Effects 0.000 abstract description 9
- 239000000155 melt Substances 0.000 abstract description 7
- 229910052753 mercury Inorganic materials 0.000 abstract description 5
- 229910052793 cadmium Inorganic materials 0.000 abstract description 3
- 238000004544 sputter deposition Methods 0.000 abstract description 3
- 229910052714 tellurium Inorganic materials 0.000 abstract description 3
- 229910052594 sapphire Inorganic materials 0.000 abstract description 2
- 239000010980 sapphire Substances 0.000 abstract description 2
- 229910004613 CdTe Inorganic materials 0.000 abstract 2
- 239000010409 thin film Substances 0.000 abstract 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
〔概要〕
傾斜型液相エピタキシャル成長装置であって、基板を支
持した状態で基板支持具で保持される基板ホルダの周縁
部に基板結晶を構成する材料と同一材料で形成された結
晶を薄層状に予めスパッタ法等を用いて形成することで
、エピタキシャル成長時に基板の周縁部でエピタキシャ
ル結晶が異常成長するのを、この薄層状の結晶層で防止
し、均一な厚さのエピタキシャル層が形成されるように
した液相エピタキシャル成長装置。[Detailed Description of the Invention] [Summary] A tilted liquid phase epitaxial growth apparatus, in which the periphery of a substrate holder, which is held by a substrate support while supporting a substrate, is made of the same material as that of the substrate crystal. By forming the crystal in a thin layer in advance using a sputtering method or the like, this thin crystal layer prevents abnormal growth of the epitaxial crystal at the peripheral edge of the substrate during epitaxial growth. A liquid phase epitaxial growth device that forms an epitaxial layer.
本発明は傾斜型液相エピタキシャル成長装置に係り、特
に異常成長を防止した液相エピタキシャル成長装置に関
する。The present invention relates to a tilted liquid phase epitaxial growth apparatus, and more particularly to a liquid phase epitaxial growth apparatus that prevents abnormal growth.
赤外線検知素子や、赤外線レーザ素子のような光電変換
素子にはエネルギーバンドギャップの狭い水銀・カドミ
ウム・テルル(Hg+−1Cdx Te)の結晶が用い
られている。Mercury-cadmium-tellurium (Hg+-1CdxTe) crystals with a narrow energy band gap are used in infrared detection elements and photoelectric conversion elements such as infrared laser elements.
このようなHg1−x Cdw Teの結晶をカドミウ
ムテルル(CdTe)基板上にエピタキシャル成長する
場合、水銀が易蒸発性の材料であるため、密閉構造の封
管を用いて水銀の蒸発を防ぎ、溶融したHg+−3Cd
XTeのメルトを基板に接触させてエビタキシャル層を
基板上に形成する傾斜型液相エピタキシャル成長装置が
、装置が簡単でかつエピタキシャル層の成長速度が早い
等の理由により良く用いられている。When such Hg1-x Cdw Te crystals are epitaxially grown on a cadmium telluride (CdTe) substrate, since mercury is a material that evaporates easily, a sealed tube is used to prevent the evaporation of mercury and the molten Hg+-3Cd
A tilted liquid phase epitaxial growth apparatus, which forms an epitaxial layer on a substrate by bringing an XTe melt into contact with the substrate, is often used because the apparatus is simple and the growth rate of the epitaxial layer is fast.
このようなエピタキシャル成長方法に於いては、基板に
形成されるエピタキシャル結晶層が均一な厚さで形成さ
れるようにすることが必要である。In such an epitaxial growth method, it is necessary to ensure that the epitaxial crystal layer formed on the substrate has a uniform thickness.
従来のこのような液相エピタキシャル成長装置について
第3図の説明図を用いて説明する。A conventional liquid phase epitaxial growth apparatus like this will be explained with reference to the explanatory diagram of FIG.
図示するように耐熱性の有底の石英管1の内部には、該
石英管1に内接するようにして、かつ中央部に凹部2を
切削して設けた円筒状の石英よりなる基板支持具3が設
置されている。As shown in the figure, inside a heat-resistant bottomed quartz tube 1, there is a substrate support made of cylindrical quartz that is inscribed in the quartz tube 1 and has a recess 2 cut in the center thereof. 3 is installed.
この基板支持具3の凹部2内には、石英板よりなる基板
ホルダ4に設置されたCdTeよりなるエピタキシャル
成長用基板5が、該基板支持具3の中心軸に沿い、かつ
凹部2を挟んで対向する面6八、6Bに設置されている
。In the recess 2 of the substrate support 3, an epitaxial growth substrate 5 made of CdTe placed on a substrate holder 4 made of a quartz plate is placed along the central axis of the substrate support 3 and facing oppositely across the recess 2. It is installed on surfaces 68 and 6B.
更に基板ホルダ4の下部には水銀、カドミウム、テルル
よりなる材料によって構成されたエピタキシャル成長用
メルト7が収容されている。Furthermore, an epitaxial growth melt 7 made of materials such as mercury, cadmium, and tellurium is housed in the lower part of the substrate holder 4.
この状態で石英管1の内部を排気した後、石英管1の他
端部に装置の回転用の支持棒8を設置し、封止する。After evacuating the inside of the quartz tube 1 in this state, a support rod 8 for rotating the device is installed at the other end of the quartz tube 1 and sealed.
次いで第4図(alに示すように、この装置を、図示し
ない石英製の炉芯管に挿入した後、この炉芯管を加熱し
、石英管1内に収容されたメルト7を溶融する。Next, as shown in FIG. 4 (al), this device is inserted into a quartz furnace core tube (not shown), and the furnace core tube is heated to melt the melt 7 housed in the quartz tube 1.
次いでこの装置を矢印A方向に180度回転させ、第4
図(b)に示すように基板ホルダ4に設置された基板5
の表面を溶融したエピタキシャル成長用メルト7に接触
させ、この炉芯管を加熱する加熱炉の温度を低下させ、
溶融したメルトの温度を降下させて基板上にエピタキシ
ャル結晶を形成していた。Next, the device is rotated 180 degrees in the direction of arrow A, and the fourth
The board 5 installed in the board holder 4 as shown in Figure (b)
Bringing the surface of the tube into contact with the molten epitaxial growth melt 7, lowering the temperature of the heating furnace that heats the furnace core tube,
Epitaxial crystals were formed on the substrate by lowering the temperature of the melt.
然し、このような従来の装置では、第5図に示すように
基板5の支持具3に接していない両側の周縁部5Aにエ
ピタキシャル結晶が異常成長する現象が見られ、このよ
うにして異常成長した結晶が形成された基板を赤外線検
知素子の形成材料として用いると素子の特性が悪く、素
子形成の歩留まりが低下する問題がある。However, in such a conventional device, as shown in FIG. 5, there is a phenomenon in which epitaxial crystals grow abnormally on the peripheral edges 5A on both sides of the substrate 5 that are not in contact with the support 3, and in this way, the abnormal growth occurs. If a substrate on which such crystals are formed is used as a material for forming an infrared sensing element, there is a problem that the characteristics of the element are poor and the yield of element formation is reduced.
この周縁部に結晶が異常成長するのは、この基板の周縁
部が中央部に比べ、供給されるメルトの量が多いためと
考えられる。The reason why crystals grow abnormally in this peripheral area is considered to be that the amount of melt supplied to the peripheral area of the substrate is larger than that in the central area.
本発明は上記した問題点を解決するもので、基板支持具
に接していない基板の両側の周縁部に結晶が異常成長し
ないようにした液相エピタキシャル成長装置の提供を目
的とする。The present invention solves the above-mentioned problems, and aims to provide a liquid phase epitaxial growth apparatus that prevents abnormal growth of crystals on the peripheral edges on both sides of a substrate that are not in contact with a substrate support.
本発明の液相エピタキシャル成長装置は、耐熱封管内に
内接し、エピタキシャル成長用基板と該基板を支持する
基板ホルダとを保持する基板支持具と、該基板ホルダの
下部に収容されたエピタキシャル成長用メルトから成る
構成に於いて、前記基板ホルダの周縁部に予め、前記基
板結晶と同一の材料より成る結晶を薄層状に設けたこと
を特徴とする。The liquid phase epitaxial growth apparatus of the present invention includes a substrate support that is inscribed in a heat-resistant sealed tube and holds a substrate for epitaxial growth and a substrate holder that supports the substrate, and a melt for epitaxial growth accommodated in the lower part of the substrate holder. The structure is characterized in that a thin layer of crystal made of the same material as the substrate crystal is provided in advance on the peripheral edge of the substrate holder.
本発明の液相エピタキシャル成長用装置は、基板支持具
に接していない基板ホルダの両側の周縁部に、予め基板
と同一の材料で薄層状の結晶層を形成する。In the liquid phase epitaxial growth apparatus of the present invention, thin crystal layers are formed in advance from the same material as the substrate on the peripheral edges of both sides of the substrate holder that are not in contact with the substrate support.
そしてこの薄層状の結晶層の領域に、基板の両側の周縁
部に異常成長して形成される結晶を成長するようにする
ことで、基板の両側の周縁部には結晶層が異常成長しな
いようにする。By growing crystals that are formed by abnormal growth on the periphery on both sides of the substrate in this thin crystal layer region, the crystal layer is prevented from abnormally growing on the periphery on both sides of the substrate. Make it.
以下、図面を用いながら本発明の一実施例につき詳細に
説明する。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.
第1図に本発明の液相エピタキシャル成長装置の説明図
を示す。FIG. 1 shows an explanatory diagram of the liquid phase epitaxial growth apparatus of the present invention.
図示するように耐熱性の有底の石英管11の内部には、
該石英管11に内接するようにして、かつ中央部に凹部
12を切削して設けた円筒状の石英よりなる基板支持具
13が設置されている。As shown in the figure, inside the heat-resistant bottomed quartz tube 11,
A substrate support 13 made of cylindrical quartz is installed so as to be inscribed in the quartz tube 11 and has a recess 12 cut in the center thereof.
この基板支持具13の凹部12内には、本発明の基板ホ
ルダ14に設置されたCdTeよりなるエピタキシャル
成長用基板15が、該基板支持具13の中心軸に沿い、
かつ凹部12を挟んで対向する面16A、16Bに接し
た形で設置されている。In the recess 12 of the substrate support 13, an epitaxial growth substrate 15 made of CdTe placed on the substrate holder 14 of the present invention is placed along the central axis of the substrate support 13.
Moreover, it is installed so as to be in contact with the surfaces 16A and 16B that face each other with the recess 12 in between.
この基板ホルダ14の構造を第2図の平面図に示す。The structure of this substrate holder 14 is shown in the plan view of FIG.
図示するように、本発明の基板ホルダ14は、サファイ
ア、或いはガリウム砒素(GaAs)の基板を用いて形
成され、その基板支持具工3に接しない両側の周縁部1
4Aには、エピタキシャル形成用基板15と同一の材料
のCdTeの結晶層が予めスパッタ法等を用いて被着形
成されている。As shown in the figure, the substrate holder 14 of the present invention is formed using a sapphire or gallium arsenide (GaAs) substrate, and has peripheral edges 1 on both sides that are not in contact with the substrate support tool 3.
A crystal layer of CdTe, which is the same material as the epitaxial formation substrate 15, has been deposited on the substrate 4A in advance by sputtering or the like.
更にこの基板ホルダ14の下部には水銀、カドミウム、
テルルよりなる材料によって構成されたエピタキシャル
成長用メルト18が収容されている。Further, the lower part of this substrate holder 14 contains mercury, cadmium,
An epitaxial growth melt 18 made of tellurium is housed therein.
このような本発明のエピタキシャル成長装置を図示しな
い炉芯管に挿入し、該炉芯管を加熱することでメルト1
8を溶融し、この成長装置を前記したように矢印B方向
に180度回軸回転て、基板15に溶融したメルト18
を接触させ、加熱炉の温度を降下させて基板上にエピタ
キシャル層を形成する。By inserting such an epitaxial growth apparatus of the present invention into a furnace core tube (not shown) and heating the furnace core tube, melt 1
The melt 18 is melted on the substrate 15 by rotating the growth apparatus 180 degrees in the direction of the arrow B as described above.
to form an epitaxial layer on the substrate by lowering the temperature of the heating furnace.
このようにすれば、前記した基板ホルダ14の両側の周
縁部14Aに予め形成されているCdTeの結晶層17
上に、異常エピタキシャル成長が起こるようになって、
基板15の両側の周縁部には異常結晶成長が生じない。In this way, the CdTe crystal layer 17 previously formed on the peripheral edge portions 14A on both sides of the substrate holder 14 described above.
Abnormal epitaxial growth begins to occur on the
Abnormal crystal growth does not occur at the peripheral edges on both sides of the substrate 15.
そのため基板15の表面の全面に均一な厚さのエピタキ
シャル層が形成されるようになり、この基板15を用い
て素子を形成すると均一な特性の素子が得られるように
なり、素子の歩留まり向上にもつながる効果が生じる。Therefore, an epitaxial layer with a uniform thickness is formed on the entire surface of the substrate 15, and when an element is formed using this substrate 15, an element with uniform characteristics can be obtained, which improves the yield of the element. An effect that also connects occurs.
以上述べたように、本発明の液相エピタキシャル成長装
置によれば、基板上に形成されるエピタキシャル結晶層
の厚さが均一となり、このようなエピタキシャル結晶を
用いて赤外線検知素子のような素子を形成すると特性の
安定した高品位の赤外線検知素子が得られる効果がある
。As described above, according to the liquid phase epitaxial growth apparatus of the present invention, the thickness of the epitaxial crystal layer formed on the substrate becomes uniform, and such an epitaxial crystal can be used to form an element such as an infrared sensing element. This has the effect of providing a high-quality infrared sensing element with stable characteristics.
第1図は本発明の装置の構造を示す説明図、第2図は本
発明の装置の要部を示す平面図、第3図は従来の装置の
構造を示す説明図、第4図(a)および第4図(b)は
従来の装置の動作の説明図、
第5図は従来の装置で形成した基板の不都合な状態の説
明図である。
図に於いて、
11は石英管、12は凹部、13は基板支持具、14は
基板ホルダ、15は基板、16A、 16Bは基板支持
具の表面、17はCdTeの結晶層、18はメルト、B
は装置本モ用の装置りど面図
第1図
7収モ明の袋[要部を元J平山貝紀
第2FI!JFIG. 1 is an explanatory diagram showing the structure of the device of the present invention, FIG. 2 is a plan view showing the main parts of the device of the present invention, FIG. 3 is an explanatory diagram showing the structure of the conventional device, and FIG. ) and FIG. 4(b) are explanatory diagrams of the operation of the conventional apparatus, and FIG. 5 is an explanatory diagram of an unfavorable state of a substrate formed by the conventional apparatus. In the figure, 11 is a quartz tube, 12 is a recess, 13 is a substrate support, 14 is a substrate holder, 15 is a substrate, 16A, 16B are the surfaces of the substrate support, 17 is a CdTe crystal layer, 18 is a melt, B
Figure 1 shows the equipment lid for the main part of the equipment. J
Claims (1)
(15)と該基板(15)を支持する基板ホルダ(14
)とを保持する基板支持具(13)と、該基板ホルダ(
14)の下部に収容されたエピタキシャル成長用メルト
(18)から成る構成に於いて、 前記基板ホルダ(14)の周縁部に予め、前記基板(1
5)と同一の材料より成る結晶(17)を、薄層状に設
けたことを特徴とする液相エピタキシャル成長装置。[Claims] A substrate holder (14) that is inscribed in the heat-resistant sealed tube (11) and supports an epitaxial growth substrate (15) and the substrate (15).
) and a substrate support (13) that holds the substrate holder (
In the structure consisting of an epitaxial growth melt (18) housed in the lower part of the substrate holder (14), the substrate (1
A liquid phase epitaxial growth apparatus characterized in that a crystal (17) made of the same material as in 5) is provided in a thin layer.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28482786A JPS63137436A (en) | 1986-11-28 | 1986-11-28 | Liquid phase epitaxial growing system |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28482786A JPS63137436A (en) | 1986-11-28 | 1986-11-28 | Liquid phase epitaxial growing system |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS63137436A true JPS63137436A (en) | 1988-06-09 |
Family
ID=17683522
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP28482786A Pending JPS63137436A (en) | 1986-11-28 | 1986-11-28 | Liquid phase epitaxial growing system |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS63137436A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008300370A (en) * | 2008-09-16 | 2008-12-11 | Hitachi Industrial Equipment Systems Co Ltd | Circuit breaker |
-
1986
- 1986-11-28 JP JP28482786A patent/JPS63137436A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008300370A (en) * | 2008-09-16 | 2008-12-11 | Hitachi Industrial Equipment Systems Co Ltd | Circuit breaker |
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