JPH0519339Y2 - - Google Patents
Info
- Publication number
- JPH0519339Y2 JPH0519339Y2 JP3820788U JP3820788U JPH0519339Y2 JP H0519339 Y2 JPH0519339 Y2 JP H0519339Y2 JP 3820788 U JP3820788 U JP 3820788U JP 3820788 U JP3820788 U JP 3820788U JP H0519339 Y2 JPH0519339 Y2 JP H0519339Y2
- Authority
- JP
- Japan
- Prior art keywords
- quartz crucible
- divided
- support member
- crucible
- support device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000010453 quartz Substances 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 9
- 229910002804 graphite Inorganic materials 0.000 claims description 9
- 239000010439 graphite Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 2
- 238000005304 joining Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Description
【考案の詳細な説明】
産業上の利用分野
この考案は、単結晶引上げ法の製造装置で使用
する石英るつぼを支持するための黒鉛製支持装置
に関する。[Detailed Description of the Invention] Industrial Application Field This invention relates to a graphite support device for supporting a quartz crucible used in a single crystal pulling manufacturing device.
従来の技術
単結晶引上げ法の製造装置で多結晶原料を溶解
するため使用される石英るつぼは、例えばシリコ
ンを溶解する1420℃以上の高温では軟化するた
め、溶解シリコンを保持したとき石英るつぼの形
状が変形する。このるつぼ変形を防止するため、
黒鉛製の石英るつぼ支持装置が使用されている。Conventional technology A quartz crucible used to melt polycrystalline raw materials in a manufacturing device using the single-crystal pulling method softens at high temperatures of 1420°C or higher, which are used to melt silicon, so when the molten silicon is held, the shape of the quartz crucible changes. is deformed. To prevent this crucible deformation,
A graphite quartz crucible support device is used.
石英るつぼ支持装置を一体物にすると、石英と
黒鉛の熱膨張率の差によつて応力が生じクラツク
が発生する。そのため、石英るつぼ支持装置は第
２図に示すように、るつぼ状筒体を複数個所（図
面には３つの場合を示す）で縦割りして分割支持
部材６を作り、各分割支持部材６の分割面を単に
当接してるつぼ形状の支持装置を形成し、中に石
英るつぼ７を納めて支持していた。 If the quartz crucible support device is made into one piece, stress will be generated due to the difference in coefficient of thermal expansion between quartz and graphite, and cracks will occur. Therefore, as shown in FIG. 2, the quartz crucible support device creates split support members 6 by vertically splitting a crucible-shaped cylinder at multiple locations (three cases are shown in the drawing). A crucible-shaped support device was formed by simply abutting the divided surfaces, and the quartz crucible 7 was housed and supported therein.
上記のごとく分割支持部材の組合せからなる支
持装置に石英るつぼを納め、高温に加熱して単結
晶原料を溶解すると、黒鉛製の支持部材と石英る
つぼの接触面が反応（SiO2＋3C→SiC＋2CO）
し、支持部材の石英るつぼ接触面にSiC層が生成
する。 When the quartz crucible is placed in a support device consisting of a combination of split support members as described above and heated to high temperature to melt the single crystal raw material, the contact surface between the graphite support member and the quartz crucible reacts (SiO 2 +3C→SiC+2CO).
However, a SiC layer is formed on the support member's contact surface with the quartz crucible.
上記SiC層が生成するとSiC層と黒鉛の熱膨張
率が異なるため、黒鉛製の各分割支持部材は外向
きに反り返る。このようにして反り返る際に割れ
が発生し、また各分割支持部材の隣接する分割面
内側角同志が互いに押圧され角部に欠けが生じて
いた。 When the SiC layer is formed, each divided support member made of graphite warps outward because the thermal expansion coefficients of the SiC layer and graphite are different. Cracks occurred during the warping in this way, and the inner corners of adjacent split surfaces of each split support member were pressed against each other, resulting in chipping at the corners.
考案が解決しようとする課題
上記のごとく、分割支持部材が反り返る際に割
れや欠けが発生すると、このまま次回の単結晶製
造に使用すれば、石英るつぼは分割支持部材の変
形や欠けに沿つて変形し、正常なるつぼ形状が維
持されず使用に耐えなくなる。また、変形した石
英るつぼを使用すれば、シリコン融液の乱れによ
り単結晶の有転位化の原因となる。Problems that the invention aims to solve As mentioned above, if cracks or chips occur when the split support member is warped, if it is used for the next single crystal production, the quartz crucible will deform along with the deformation or chipping of the split support member. However, the crucible does not maintain its normal shape and is no longer usable. Furthermore, if a deformed quartz crucible is used, the turbulence of the silicon melt may cause dislocations in the single crystal.
この考案は、かかる現状にかんがみ、従来の石
英るつぼ支持装置の有する欠点を排除するように
改良された石英るつぼ支持装置を提供するもので
ある。 In view of the current situation, this invention provides a quartz crucible support device that is improved so as to eliminate the drawbacks of conventional quartz crucible support devices.
課題を解決するための手段
上記目的を達成するために、この考案の石英る
つぼ支持装置は、黒鉛製のるつぼ状筒体を複数に
縦割した分割支持部材の分割面内側角を石英るつ
ぼに当接する長さにわたり面取りし、かつ上面の
両側分割面寄りにピン孔を穿設し、隣設分割支持
部材のピン孔間に耐熱性でかすがい状の接合金具
を取着してなる。Means for Solving the Problems In order to achieve the above object, the quartz crucible support device of this invention applies the inner corner of the split surface of a divided support member, which is obtained by vertically dividing a graphite crucible-shaped cylinder into a plurality of pieces, to a quartz crucible. The contacting length is chamfered, pin holes are bored on both sides of the upper surface near the divided surfaces, and heat-resistant, glazing-like joining fittings are attached between the pin holes of the adjacent divided support members.
作 用
支持装置に石英るつぼを納め単結晶材料を溶解
する際、支持装置と石英るつぼとの接触面の反応
により支持装置の各分割支持部材が外側へ反り返
ろうとしても接合金具により阻止され変形するこ
とがない。また、反り返る力が接合金具の強度を
超え、反り返りが起つた場合でも分割支持部材の
分割面内側角は面取りしてあるため欠けを生じる
ことがない。Function When a quartz crucible is placed in the support device and a single crystal material is melted, even if each divided support member of the support device tries to warp outward due to the reaction of the contact surface between the support device and the quartz crucible, the joining metal fittings prevent the deformation. There's nothing to do. In addition, even if the warping force exceeds the strength of the joining metal fittings and warping occurs, the inner corner of the split surface of the split support member is chamfered, so that chipping will not occur.
実施例 この考案の実施例を第１図に基いて説明する。Example An embodiment of this invention will be explained based on FIG.
所定の石英るつぼを収納し得る内容積を有する
るつぼ状筒体を複数（図面は３つ）に縦割した形
状及び大きさの分割支持部材１を黒鉛を使つて作
る。そして、上記分割支持部材１の分割面２の石
英るつぼが当接する内側角をその当接する長さに
わたり面取り３してまるみを付ける。また、各分
割支持部材１の上面の両側分割面寄りにピン孔４
を穿設する。各分割支持部材１を円形に組合せた
のち、隣接分割支持部材１のピン孔４，４間にモ
リブデンやタングステンなど超耐熱性金属を素材
としたかすがい状の接合金具５を取着して組立て
る。 A divided support member 1 having a shape and size in which a crucible-shaped cylinder having an internal volume capable of accommodating a predetermined quartz crucible is vertically divided into a plurality of parts (three in the drawing) is made using graphite. Then, the inner corner of the split surface 2 of the split support member 1 that the quartz crucible contacts is rounded by chamfering 3 over the length of the contact. In addition, pin holes 4 are provided on the upper surface of each divided support member 1 near both side divided surfaces.
to be drilled. After assembling each split support member 1 in a circular shape, a gauze-shaped joining fitting 5 made of super heat-resistant metal such as molybdenum or tungsten is attached between the pin holes 4 and 4 of adjacent split support members 1 and assembled. .
上記のこどく組立てられた支持装置内には石英
るつぼを収納して単結晶引上げ法製造装置内に組
込まれる。使用後は製造装置内から取出して各接
合金具５を抜き取れば簡単に解体できる。 A quartz crucible is housed in the carefully assembled support device, and the crucible is incorporated into a single crystal pulling manufacturing device. After use, it can be easily dismantled by taking it out of the manufacturing apparatus and pulling out each joining fitting 5.
考案の効果
この考案は上記のごとく、分割支持部材は外向
きに反り返る力が生じても接合金具により変形は
阻止される。また変形が生じた場合でも分割支持
部材の割れや欠けの発生を防止できる。Effects of the Invention As described above, in this invention, even if a force that causes the split support member to warp outward is generated, deformation is prevented by the joining fittings. Furthermore, even if deformation occurs, cracking or chipping of the split support member can be prevented.
第１図はこの考案の実施例を一部は破断して示
す斜視図、第２図は従来装置の一例を示す斜視図
である。
１……分割支持部材、２……分割面、３……面
取り、４……ピン孔、５……接合金具。
FIG. 1 is a partially cutaway perspective view of an embodiment of this invention, and FIG. 2 is a perspective view of an example of a conventional device. 1... Divided support member, 2... Divided surface, 3... Chamfer, 4... Pin hole, 5... Joining metal fitting.
Claims (1)
英るつぼ支持装置において、各分割支持部材の分
割面内側角を石英るつぼに当接する長さにわたり
面取りし、かつ上面の両側分割面寄りにピン孔を
穿設し、隣設分割支持部材のピン孔間に耐熱性で
かすがい状の接合金具を取着してなる単結晶引上
げ法製造装置における石英るつぼ支持装置。 In a quartz crucible support device formed by vertically dividing a graphite crucible-shaped cylinder into a plurality of parts, the inner corner of the divided surface of each divided support member is chamfered over the length that contacts the quartz crucible, and the upper surface is chamfered on both sides of the divided surface. A quartz crucible support device for a single crystal pulling method manufacturing device, which includes a pin hole drilled and a heat-resistant, gauze-like joint fitting attached between the pin holes of adjacent split support members.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3820788U JPH0519339Y2 (en) | 1988-03-22 | 1988-03-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3820788U JPH0519339Y2 (en) | 1988-03-22 | 1988-03-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01142463U JPH01142463U (en) | 1989-09-29 |
| JPH0519339Y2 true JPH0519339Y2 (en) | 1993-05-21 |
Family
ID=31264770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3820788U Expired - Lifetime JPH0519339Y2 (en) | 1988-03-22 | 1988-03-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0519339Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5645252B2 (en) * | 2010-09-24 | 2014-12-24 | 信越石英株式会社 | Method and apparatus for exhausting gas between crucible and susceptor |
| JP6743797B2 (en) * | 2017-09-29 | 2020-08-19 | 株式会社Sumco | Crucible support pedestal, quartz crucible support device, and method for manufacturing silicon single crystal |
-
1988
- 1988-03-22 JP JP3820788U patent/JPH0519339Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01142463U (en) | 1989-09-29 |
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