JPH0521871Y2 - - Google Patents
Info
- Publication number
- JPH0521871Y2 JPH0521871Y2 JP16739488U JP16739488U JPH0521871Y2 JP H0521871 Y2 JPH0521871 Y2 JP H0521871Y2 JP 16739488 U JP16739488 U JP 16739488U JP 16739488 U JP16739488 U JP 16739488U JP H0521871 Y2 JPH0521871 Y2 JP H0521871Y2
- Authority
- JP
- Japan
- Prior art keywords
- susceptor
- wafer
- sub
- main
- radiation emitted
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 235000012431 wafers Nutrition 0.000 claims description 64
- 125000006850 spacer group Chemical group 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 19
- 230000000694 effects Effects 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【考案の詳細な説明】
〔産業上の利用分野〕
本考案は、Si等半導体デバイスの製造プロセス
において用いられるCVD装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a CVD apparatus used in the manufacturing process of semiconductor devices such as Si.
Si等の半導体デバイス製造プロセスにおいて
は、エピタキシヤル成長を行つたり、polySi膜、
SiN膜、SiO2膜等の生成を行うために、第４図の
様なCVD装置が広く用いられている。
In the manufacturing process of semiconductor devices such as Si, epitaxial growth, polySi film, etc.
A CVD apparatus as shown in FIG. 4 is widely used to generate SiN films, SiO 2 films, etc.
このようなCVD装置において、ウエーハ１は
サセプタ（SiCコート・カーボン）２の上に置か
れる。サセプタ２は、その下方にあるワークコイ
ル３に高周波電流を流すことにより誘導加熱され
る。ウエーハ１は、サセプタ２からの熱伝達によ
り加熱される。この様な状態で、ノズル４から、
原料ガスをキヤリアガス例えば、H2，N2，Ar等
のガスと共に流すことにより、ウエーハ１の表面
にCVD膜が生成される。 In such a CVD apparatus, a wafer 1 is placed on a susceptor (SiC coated carbon) 2. The susceptor 2 is heated by induction by passing a high frequency current through a work coil 3 located below the susceptor. The wafer 1 is heated by heat transfer from the susceptor 2. In this state, from nozzle 4,
A CVD film is generated on the surface of the wafer 1 by flowing the source gas together with a carrier gas such as H 2 , N 2 , Ar, or the like.
この様な装置において、ウエーハ１はサセプタ
２から熱を受け、裏面より加熱されるが、表面か
らは輻射による放熱と、ガス流による冷却によつ
て、熱エネルギーを失う。一方、ウエーハ１の表
面及びウエーハ１の置いていないサセプタ２の表
面から出た輻射は、ベルジヤ（ステンレス又は、
ステンレスの内面に金メツキを行つたもの）５の
内面で反射され、再びウエーハ１及びサセプタ２
を上方から加熱する。この反射によるエネルギー
は、ウエーハ１表面から出た輻射と、サセプタ２
表面のウエーハ１の置いていない部分から出た輻
射の平均化されたものとなる。 In such an apparatus, the wafer 1 receives heat from the susceptor 2 and is heated from the back surface, but loses thermal energy from the front surface due to heat dissipation by radiation and cooling by gas flow. On the other hand, the radiation emitted from the surface of the wafer 1 and the surface of the susceptor 2 on which the wafer 1 is not placed is
It is reflected on the inner surface of wafer 1 and susceptor 2 (which is made of stainless steel with gold plating).
Heat from above. The energy due to this reflection is combined with the radiation emitted from the surface of the wafer 1 and the energy from the susceptor 2.
This is the averaged radiation emitted from the portion of the surface where the wafer 1 is not placed.
従来、ウエーハ１は、第４図示のようにサセプ
タ２の上に直接置かれていたので、ウエーハ１の
温度はサセプタ２の温度と略同じ程度となり、反
射によるエネルギーはベルジヤ５内面の反射率に
よつて決まるから、ある一定値以上にすることは
困難であつた。従つて、この様な状態では、ウエ
ーハ１の面を垂直方向に通る熱の流れは、ウエー
ハ１の裏面から表面に向かつて大きな量となり、
ウエーハ１は、上面が凹となる様にそる。この様
なそりは、ウエーハ１の中心部と周辺部で大きな
温度差を生じ、熱ストレスによりウエーハにスリ
ツプが入り易いという課題があつた。 Conventionally, the wafer 1 was placed directly on the susceptor 2 as shown in FIG. Therefore, it was difficult to increase the value above a certain value. Therefore, in such a state, the amount of heat flowing vertically through the surface of the wafer 1 increases from the back surface to the front surface of the wafer 1.
The wafer 1 is warped so that the top surface becomes concave. Such warpage causes a large temperature difference between the center and the periphery of the wafer 1, which poses a problem in that the wafer is likely to slip due to thermal stress.
本考案装置は従来法のウエーハをサセプタ上に
直接置いて加熱することにより、ウエーハの裏面
から表面を通過する熱流が大きく、従つてウエー
ハのそりが大きくなることから、ウエーハにスリ
ツプが発生し易くなるという課題を解決するた
め、第１図示のようにサセプタ２上にウエーハ１
を載置してCVD膜生成を行う構造のCVD装置に
おいて、サセプタ２は、１個の主サセプタ２ｂ
と、ウエーハ１の直径よりもわずかに大きな直径
を有しチヤージウエーハ１の数と同じ個数の副サ
セプタ２ａから成り、副サセプタ２ａは主サセプ
タ２ｂ上に隙間８を介して設置し、ウエーハ１は
副サセプタ２ａ上に載置せしめてなる構成とした
ものである。
The device of this invention uses the conventional method to place the wafer directly on the susceptor and heat it, resulting in a large heat flow passing from the back side to the front side of the wafer, which increases the warpage of the wafer, making it easier for the wafer to slip. In order to solve the problem of
In a CVD apparatus having a structure in which a CVD film is produced by placing a susceptor 2, one main susceptor 2b
The sub-susceptors 2a have a diameter slightly larger than that of the wafer 1, and the number of sub-susceptors 2a is the same as the number of charge wafers 1. The structure is such that it is placed on a susceptor 2a.
ウエーハ１は主サセプタ２ｂ上に隙間８を介し
て設けられた副サセプタ２ａ上に置かれているの
で、ウエーハ１をサセプタ２上に直接置いた場合
よりもウエーハ１の温度は多少低くなる。一方、
主サセプタ２ｂ表面の副サセプタ２ａの置いてい
ない部分から出た輻射と、ウエーハ１の置いてい
ない副サセプタ２ａの部分の表面から出た輻射及
びウエーハ１の表面から出た輻射は、ベルジヤ５
の内面で反射され、ウエーハ１、主サセプタ２ｂ
及び副サセプタ２ａを上方から加熱する。
Since the wafer 1 is placed on the sub-susceptor 2a provided above the main susceptor 2b through the gap 8, the temperature of the wafer 1 is somewhat lower than when the wafer 1 is placed directly on the susceptor 2. on the other hand,
The radiation emitted from the part of the surface of the main susceptor 2b where the sub susceptor 2a is not placed, the radiation emitted from the surface of the part of the sub susceptor 2a where the wafer 1 is not placed, and the radiation emitted from the surface of the wafer 1 are transmitted to the bell gear 5.
wafer 1, main susceptor 2b
And the sub-susceptor 2a is heated from above.
この反射によるエネルギーは、従来のウエーハ
１表面から出た輻射と、サセプタ２表面のウエー
ハ１の置いていない部分から出た輻射の平均化さ
れたエネルギーに比して副サセプタ２ａを介在さ
せた分だけ多少大きくなる。 The energy due to this reflection is greater than the average energy of the radiation emitted from the surface of the wafer 1 and the radiation emitted from the part of the surface of the susceptor 2 where the wafer 1 is not placed. only slightly larger.
従つてウエーハ１の面に垂直方向に下方から上
方に向う熱の流れは、主サセプタ２ｂと副サセプ
タ２ａの間に隙間８を介在させることにより緩和
されるからウエーハ１の反りは少なくなり、スリ
ツプの発生は抑制される。 Therefore, the flow of heat from below to above in the direction perpendicular to the surface of the wafer 1 is alleviated by interposing the gap 8 between the main susceptor 2b and the sub susceptor 2a, so that the wafer 1 is less warped and slips. The occurrence of is suppressed.
〔実施例〕
以下図面に基づいて本考案の実施例を説明す
る。[Example] An example of the present invention will be described below based on the drawings.
第１図は本考案装置の第１実施例の要部の構成
を示す断面図で、５はベルジヤ、２はベルジヤ５
内に設けられたサセプタである。ベルジヤ５内面
は、金（Au）等の赤外線及び可視光線に対して
反射率の高い材料でできており、鏡面研磨されて
いる。 FIG. 1 is a cross-sectional view showing the configuration of the main parts of the first embodiment of the device of the present invention, where 5 is a bell gear, and 2 is a bell gear 5.
It is a susceptor provided inside. The inner surface of the bell gear 5 is made of a material such as gold (Au) that has a high reflectance to infrared rays and visible light, and is mirror-polished.
第１実施例ではサセプタ２は１個の主サセプタ
２ｂと、ウエーハ１の直径よりもわずかに大きな
直径を有しチヤージウエーハ１の数と同じ個数の
副サセプタ２ａからなり、副サセプタ２ａは主サ
セプタ２ｂ上に設置され、ウエーハ１はこの副サ
セプタ２ａに載置されている。 In the first embodiment, the susceptor 2 consists of one main susceptor 2b and sub susceptors 2a having a diameter slightly larger than the diameter of the wafer 1 and the same number as the charge wafers 1, and the sub susceptor 2a is the same as the main susceptor 2b. The wafer 1 is placed on this sub-susceptor 2a.
この第１実施例においてウエーハ１は主サセプ
タ２ｂ上に隙間８を介して設けられた副サセプタ
２ａ上に置かれているので、ウエーハ１をサセプ
タ２上に直接置いた場合よりもウエーハ１の温度
は多少低くなる。一方、主サセプタ２ｂ表面の副
サセプタ２ａの置いていない部分から出た輻射
と、ウエーハ１の置いていない副サセプタ２ａの
部分の表面から出た輻射及びウエーハ１の表面か
ら出た輻射は、ベルジヤ５の内面で反射され、ウ
エーハ１、主サセプタ２ｂ及び副サセプタ２ａを
上方から加熱する。 In this first embodiment, since the wafer 1 is placed on the sub-susceptor 2a provided above the main susceptor 2b through the gap 8, the temperature of the wafer 1 is lower than that in the case where the wafer 1 is placed directly on the susceptor 2. will be somewhat lower. On the other hand, the radiation emitted from the part of the surface of the main susceptor 2b where the sub susceptor 2a is not placed, the radiation emitted from the surface of the part of the sub susceptor 2a where the wafer 1 is not placed, and the radiation emitted from the surface of the wafer 1 are The wafer 1, the main susceptor 2b, and the sub-susceptor 2a are heated from above.
この反射によるエネルギーは、従来のウエーハ
１表面から出た輻射と、サセプタ２表面のウエー
ハ１の置いていない部分から出た輻射の平均化さ
れたエネルギーに比して副サセプタ２ａを介在さ
せた分だけ多少大きくなる。 The energy due to this reflection is somewhat larger than the average energy of the radiation emitted from the surface of the wafer 1 in the conventional case and the radiation emitted from the portion of the surface of the susceptor 2 on which the wafer 1 is not placed, due to the presence of the sub-susceptor 2a.
従つてウエーハ１の面に垂直方向に下方から上
方に向う熱の流れは，主サセプタ２ｂと副サセプ
タ２ａの間に隙間８を介在させることにより緩和
されるからウエーハ１の反りは少なくなり、スリ
ツプの発生は抑制される。 Therefore, the flow of heat from below to above in the direction perpendicular to the surface of the wafer 1 is alleviated by interposing the gap 8 between the main susceptor 2b and the sub susceptor 2a, so that the wafer 1 is less warped and slips. The occurrence of is suppressed.
第２図は第２実施例の要部の構成を示す断面図
である。 FIG. 2 is a sectional view showing the configuration of the main parts of the second embodiment.
この第２実施例ではウエーハ１は、ウエーハ径
よりもわずかに大きな径の副サセプタ２ａ上に置
かれ、副サセプタ２ａは、スペーサ（SiC、石英
等）６を介して主サセプタ２ｂ上に置かれてい
る。 In this second embodiment, a wafer 1 is placed on a sub-susceptor 2a having a diameter slightly larger than the wafer diameter, and the sub-susceptor 2a is placed on a main susceptor 2b via a spacer (SiC, quartz, etc.) 6. ing.
第２図の第２実施例において、副サセプタ２ａ
はスペーサ６を介して主サセプタ２ｂから離れて
いるため、主サセプタ２ｂ表面から出る輻射及び
伝導による熱伝達のうち、伝導によるものが減少
する。従つて、副サセプタ２ａの温度は主サセプ
タ２ｂの温度よりも低くなる。ウエーハ１の温度
は、副サセプタ２ａの温度とほぼ同程度である。
この場合、主サセプタ２ｂ表面の副サセプタ２ａ
の置いていない部分から出た輻射と、ウエーハ１
表面から出た輻射は、ベルジヤ５の内面で反射さ
れ、ウエーハ１及び主サセプタ２ｂを上方から加
熱する。 In the second embodiment shown in FIG. 2, the sub susceptor 2a
Since it is separated from the main susceptor 2b via the spacer 6, the amount of heat transferred by conduction among the radiation and conduction heat transfer from the surface of the main susceptor 2b is reduced. Therefore, the temperature of the sub-susceptor 2a becomes lower than the temperature of the main susceptor 2b. The temperature of the wafer 1 is approximately the same as the temperature of the sub-susceptor 2a.
In this case, the sub susceptor 2a on the surface of the main susceptor 2b
Radiation emitted from the part where wafer 1 is not placed and wafer 1
The radiation emitted from the surface is reflected on the inner surface of the bell gear 5 and heats the wafer 1 and the main susceptor 2b from above.
この反射によるエネルギーは、ウエーハ１表面
から出る輻射とそれより高い温度の主サセプタ２
ｂ表面から出る輻射を面積割合で平均化したもの
となるから、ウエーハ１表面の受けるエネルギー
は、従来法のウエーハ１をサセプタ２に直接置い
た場合よりも大きくなる。従つて、ウエーハ１の
面に垂直方向に下方から上方に向かう熱の流れ
は、その分だけ緩和されるから、ウエーハ１のそ
りは一層少なくなり、スリツプの発生は一層抑制
される。 The energy due to this reflection is composed of radiation emitted from the surface of the wafer 1 and the main susceptor 2, which has a higher temperature.
Since the radiation emitted from the surface b is averaged by area ratio, the energy received by the surface of the wafer 1 is larger than when the wafer 1 is placed directly on the susceptor 2 in the conventional method. Therefore, the flow of heat from below to above in the direction perpendicular to the surface of the wafer 1 is relaxed accordingly, so that the wafer 1 is less warped and the occurrence of slips is further suppressed.
第３図は第３実施例の要部の構成を示す断面図
である。 FIG. 3 is a sectional view showing the configuration of the main parts of the third embodiment.
この第３実施例では、ウエーハ１は、第２図示
の第２実施例と同様に、副サセプタ２ａ上に置か
れるが、主サセプタ２ｂ上面には、副サセプタ２
ａの直径よりもわずかに大きな直径のザグリ（窪
み）７が設けられており、その底面部の形状は、
上面が凹となつた球面状の形状を有している。副
サセプタ２ａは、このザグリ７の中に置かれてい
る。 In this third embodiment, the wafer 1 is placed on the sub-susceptor 2a as in the second embodiment shown in the second figure, but the sub-susceptor 2 is placed on the upper surface of the main susceptor 2b.
A counterbore (indentation) 7 with a diameter slightly larger than the diameter of a is provided, and the shape of the bottom part is as follows.
It has a spherical shape with a concave upper surface. The sub-susceptor 2a is placed in this counterbore 7.
第３図示の第３実施例の場合には、副サセプタ
２ａと主サセプタ２ｂの間に隙間８が作られてお
り、第２図の場合と同様に、主サセプタ２ｂと副
サセプタ２ａの間に温度差が生じ、副サセプタ２
ａ及びウエーハ１は、主サセプタ２ｂの温度より
も低くなるから、第２図の場合と同様の効果があ
る。 In the case of the third embodiment shown in FIG. 3, a gap 8 is created between the sub susceptor 2a and the main susceptor 2b, and as in the case of FIG. A temperature difference occurs, and the secondary susceptor 2
Since the temperature of the main susceptor 2a and the wafer 1 is lower than that of the main susceptor 2b, the same effect as in the case of FIG. 2 is obtained.
本考案においては、ザグリ７の底面部の形状は
上面が凹である球面状に限らず、円錐状、または
それらを組合せた形状であつてもよい。 In the present invention, the shape of the bottom surface of the counterbore 7 is not limited to a spherical shape with a concave upper surface, but may also be a conical shape or a combination thereof.
上述のように本考案によれば、ウエーハ１の垂
直方向に下方から上方に向かう熱の流れを緩和で
きるから、ウエーハ１のそりは少なくなり、スリ
ツプの発生を抑制することができ、デバイスの歩
留りを向上させることができる。
As described above, according to the present invention, the flow of heat from the bottom to the top in the vertical direction of the wafer 1 can be relaxed, so the warpage of the wafer 1 can be reduced, the occurrence of slip can be suppressed, and the yield of devices can be improved. can be improved.
第１図は本考案装置の第１実施例の要部の構成
を示す断面図、第２図は第２実施例の要部の構成
を示す断面図、第３図は第３実施例の要部の構成
を示す断面図、第４図は従来のCVD装置の構成
を示す簡略断面図である。
１……ウエーハ、２……サセプタ、２ａ……副
サセプタ、２ｂ……主サセプタ、３……ワークコ
イル、４……ノズル、５……ベルジヤ、６……ス
ペーサ、７……ザグリ。
FIG. 1 is a sectional view showing the configuration of the main part of the first embodiment of the device of the present invention, FIG. 2 is a sectional view showing the structure of the main part of the second embodiment, and FIG. 3 is the main part of the third embodiment. FIG. 4 is a simplified sectional view showing the structure of a conventional CVD apparatus. 1...Wafer, 2...Susceptor, 2a...Subsusceptor, 2b...Main susceptor, 3...Work coil, 4...Nozzle, 5...Belgear, 6...Spacer, 7...Counterbore.
Claims (1)
膜生成を行う構造のCVD装置において、サセ
プタ２は、１個の主サセプタ２ｂと、ウエーハ
１の直径よりもわずかに大きな直径を有しチヤ
ージウエーハ１の数と同じ個数の副サセプタ２
ａから成り、副サセプタ２ａは主サセプタ２ｂ
上に隙間８を介して設置し、ウエーハ１は副サ
セプタ２ａ上に載置せしめてなるCVD装置。 (2) 主サセプタ２ｂと副サセプタ２ａの間にスペ
ーサ６を挿設し、両サセプタ２ａ，２ｂ間に一
定の隙間８を設けてなる実用新案登録請求の範
囲第１項記載のCVD装置。 (3) 主サセプタ２ｂの表面に、副サセプタ２ａの
径よりもわずかに大きなザグリ７を設け、その
底面部の形状は上面が凹である球面状、円錐
状、若しくはそれらを組合せた形状を有し、そ
の中に副サセプタ２ａを設置せしめてなる実用
新案登録請求の範囲第１項記載のCVD装置。[Scope of claims for utility model registration] (1) CVD by placing wafer 1 on susceptor 2
In a CVD apparatus having a structure for film formation, the susceptor 2 includes one main susceptor 2b and the same number of sub-susceptors 2 as the number of charge wafers 1, each having a diameter slightly larger than that of the wafer 1.
a, the sub susceptor 2a is the main susceptor 2b
The wafer 1 is placed on the sub-susceptor 2a with a gap 8 interposed therebetween. (2) The CVD apparatus according to claim 1, wherein a spacer 6 is inserted between the main susceptor 2b and the sub-susceptor 2a, and a certain gap 8 is provided between the susceptors 2a and 2b. (3) A counterbore 7 is provided on the surface of the main susceptor 2b, which is slightly larger than the diameter of the sub-susceptor 2a, and the bottom surface thereof has a spherical shape with a concave upper surface, a conical shape, or a combination thereof. A CVD apparatus according to claim 1, wherein a sub-susceptor 2a is installed in the CVD apparatus.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16739488U JPH0521871Y2 (en) | 1988-12-23 | 1988-12-23 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16739488U JPH0521871Y2 (en) | 1988-12-23 | 1988-12-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0288233U JPH0288233U (en) | 1990-07-12 |
| JPH0521871Y2 true JPH0521871Y2 (en) | 1993-06-04 |
Family
ID=31455648
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16739488U Expired - Lifetime JPH0521871Y2 (en) | 1988-12-23 | 1988-12-23 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0521871Y2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4820755B2 (en) * | 2004-08-06 | 2011-11-24 | 株式会社日立国際電気 | Heat treatment apparatus and substrate manufacturing method |
-
1988
- 1988-12-23 JP JP16739488U patent/JPH0521871Y2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0288233U (en) | 1990-07-12 |
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