JPS63307197A - Production of thin film of high-temperature superconductive oxide - Google Patents
Production of thin film of high-temperature superconductive oxideInfo
- Publication number
- JPS63307197A JPS63307197A JP62140895A JP14089587A JPS63307197A JP S63307197 A JPS63307197 A JP S63307197A JP 62140895 A JP62140895 A JP 62140895A JP 14089587 A JP14089587 A JP 14089587A JP S63307197 A JPS63307197 A JP S63307197A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- temperature superconductive
- crystal structure
- xnx
- substance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims abstract description 23
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 239000011780 sodium chloride Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 10
- 229910052788 barium Inorganic materials 0.000 claims abstract description 6
- 229910052727 yttrium Inorganic materials 0.000 claims abstract description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims abstract description 5
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 5
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 12
- 239000010408 film Substances 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 1
- 150000002910 rare earth metals Chemical class 0.000 abstract 1
- 235000002639 sodium chloride Nutrition 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 241000238557 Decapoda Species 0.000 description 1
- 229910002370 SrTiO3 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は高温超伝導酸化物薄膜を任意の基板材料上にエ
ピタキシャル成長させるための薄膜の製法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for producing a thin film of a high temperature superconducting oxide for epitaxial growth on any substrate material.
（従来の技術）
（Ｌａｌ−ｘ Ｂａｘ ）２ＣｕＯ４、（Ｌａ＋−Ｘ
５ｒＸ）ｚｃｕｏ４、（０，０１＜ｘ＜０．１５） 、
Ｂａ２ＹＣｕ＋０．−６ （δ’−０，２）は超伝導転
移温度（Ｔｃ）がそれぞれ約３０に、４０におよび９０
にの高温超伝導酸化物であり、特にＢａｚＹＣｕ：＋０
ｔ−６は窒素温度で動作する超伝導デバイス実現のため
に重要な材料である。(Prior art) (Lal-x Bax )2CuO4, (La+-X
5rX)zcuo4, (0,01<x<0.15),
Ba2YCu+0. -6 (δ'-0,2) has a superconducting transition temperature (Tc) of approximately 30, 40, and 90, respectively.
is a high-temperature superconducting oxide, especially BazYCu: +0
T-6 is an important material for realizing superconducting devices that operate at nitrogen temperatures.
超伝導デバイスを実現する第一歩として薄膜化が必要で
あり、その薄膜作製には基板材料が非常に重要となって
来る。The first step in realizing a superconducting device is to make it thin, and the substrate material is extremely important for making such thin films.
上記超伝導物質は超伝導特性に大きな異方性があること
が判っており（Ｙ、 Ｈｉｄａｋａ ｅｔ ａｌ、Ｊ
ｐｎ。It is known that the above superconducting materials have large anisotropy in their superconducting properties (Y, Hidaka et al, J
pn.
Ｊ、Ａｐｐｌ、Ｐｈｙｓ、２６ （４）、 Ｌ３７７
（１９８７）および２６ （５）Ｌ３４４ （１９８
７））、従ってその超伝導特性を充分発揮させた状態で
利用するためには基板上にエピタキシャル成長させるこ
とが望ましい。ところが、エピタキシャル成長のために
は、結晶の対称性、格子定数が薄膜に近いことが必要で
、現在までにエピタキシャル成長を可能としている基板
材料は５ｒＴｉ０３のみである（ Ｍ、５ｕｚｕｋｉ
ｅｔ ａｌ、＋ Ｊｐｎ、Ｊ。J, Appl, Phys, 26 (4), L377
(1987) and 26 (5) L344 (198
7)) Therefore, in order to fully utilize its superconducting properties, it is desirable to grow it epitaxially on a substrate. However, for epitaxial growth, it is necessary that the crystal symmetry and lattice constant be close to those of a thin film, and to date, the only substrate material that allows epitaxial growth is 5rTi03 (M, 5uzuki
et al, + Jpn, J.
Ａｐｐｌ、 Ｐｈｙ、 ２６ （４） 、 Ｌ５２１
（１９８７））。Appl, Phy, 26 (4), L521
(1987)).
（発明が解決しようとする問題点）
ところが、ＳｒＴｉＯ３の単結晶はベルヌーイ法で製作
されており、引き上げ法で製作されるＳｉなどのように
大きなサイズの単結晶を得ることができない。そこでＳ
ｉ基板など充分な大きさのものが入手可能な材料の上に
薄膜をエピタキシャル成長する技術が要求される。(Problems to be Solved by the Invention) However, the single crystal of SrTiO3 is manufactured by the Bernoulli method, and unlike Si or the like which is manufactured by the pulling method, it is not possible to obtain a large-sized single crystal. So S
A technique is required to epitaxially grow thin films on materials that are available in sufficient size, such as i-substrates.
本発明は高Ｔｃ超伝導酸化物の薄膜を大きな基板面積の
得られる基板材料上にエピタキシャル成長させる製法を
提供することを目的とする。It is an object of the present invention to provide a method for epitaxially growing a thin film of a high Tc superconducting oxide on a substrate material that provides a large substrate area.
（問題点を解決するための手段）
高温超伝導酸化物（Ｍ＋−ｘＮｘ）２ＣｕＯｎ また
はＭＮｚＣｕＪｆｆ−６（Ｍ＝Ｙ、Ｌａ＋希土類元素；
Ｎ＝Ｂａ、Ｓｒ＋Ｃａ ；δζ０．１〜０．２）など
はペロブスカイト型結晶構造の変形で、ペロブスカイト
型およびＮａＣｌ型の両法の結晶構造と整合性がよい（
第１図参照）。第２図のようにシリコン（Ｓｉ）、サフ
ァイア（Ａ１ｚＯ＋）などの基板１の上に、ＮａＣｌ型
結晶構造をもち、格子定数が上記物質に近い材料の薄膜
２を数１０Ａ〜数１０００Ａだけエピタキシャル成長さ
せておき、その上に上述の超伝導酸化物３を堆積させる
ことにより、これら高Ｔｃ超伝導酸化物をエピタキシャ
ル成長させることができる。(Means for solving the problem) High temperature superconducting oxide (M+-xNx)2CuOn or MNzCuJff-6 (M=Y, La+rare earth element;
N=Ba, Sr+Ca; δζ0.1~0.2) are modifications of the perovskite crystal structure, and are consistent with both the perovskite and NaCl crystal structures (
(See Figure 1). As shown in Fig. 2, a thin film 2 of a material having an NaCl type crystal structure and a lattice constant close to that of the above substance is epitaxially grown on a substrate 1 such as silicon (Si) or sapphire (A1zO+) by several tens of amps to several thousand amps. By depositing the above-mentioned superconducting oxide 3 thereon, these high Tc superconducting oxides can be epitaxially grown.
本発明について概説すると本発明の第一の発明は高温超
伝導酸化物（Ｍ＋−ｘＮｘ）ｚｃｕｏ４（Ｍ＝Ｙ、Ｌａ
、希土類元素； Ｎ＝Ｂａ、 Ｓｒ、 Ｃａ ）または
ＭＮｚＣｕａＯｌ−６（δζ０．１〜０．２）の薄膜作
製工程において、格子定数が上記物質に近＜ ＮａＣｌ
型結晶構造をもつ物質の薄膜層を基板表面にエピタキシ
ャル成長させた後、上記の（Ｍ＋−ＸＮｘ） １ｃｕ０
４またはＭＮｚＣｕ３０ｔ−６の薄膜を堆積させ、エピ
タキシャル成長させるものである。To summarize the present invention, the first invention of the present invention is a high temperature superconducting oxide (M+-xNx) zcuo4 (M=Y, La
, rare earth elements; N=Ba, Sr, Ca) or MNzCuaOl-6 (δζ0.1~0.2) in the thin film production process when the lattice constant is close to that of the above substance < NaCl
After epitaxially growing a thin film layer of a material having a type crystal structure on the substrate surface, the above (M+-XNx) 1cu0
4 or MNzCu30t-6 is deposited and epitaxially grown.
第二の発明は、第一の発明で形成させた薄膜の上にＮａ
Ｃｌ型結晶構造の絶縁層を１０〜３０Ａ堆積させ、さら
に（Ｍ＋−ｘＮｘ）２ＣｕＯ４ またはＭＮｚＣｕ３
０ｙ−６なる薄膜を堆積させ、ジョセフソン接合を同時
に形成させるものである。The second invention is to apply Na on the thin film formed in the first invention.
An insulating layer with a Cl-type crystal structure is deposited for 10 to 30A, and then (M+-xNx)2CuO4 or MNzCu3
A thin film called 0y-6 is deposited, and a Josephson junction is simultaneously formed.
ここでＮａＣｌ型結晶構造をもつ物質としてはＢａｄ。Here, the substance with the NaCl type crystal structure is Bad.
ＳｒＯ，ＣａＯ等のアルカリ土類の酸化物が適している
。Alkaline earth oxides such as SrO and CaO are suitable.
（実施例） 以下実施例により本発明を具体的に説明する。(Example) The present invention will be specifically explained below using Examples.
（実施例１ ） Ｓｔ （１００）面上に特願昭６１
−１８０６６１ ｒ複合酸化物薄膜の製造方法」、特願
昭６１−２５２４８６ ｒ酸化物薄膜の製造装置」によ
る第３図の装置中の基板ホルダ１１にシリコン（Ｓｔ）
基板１を取りつける。真空度１０−９Ｔｏｒｒ以下とし
、基板温度を５００°Ｃとして、Ｋセル１２から金属Ｓ
ｒを蒸発させながら、Ｓｒの堆積膜に酸素ビームを５０
ｅＶで打ち込み、ＮａＣｌ型のＳｒＯ薄膜を厚さ５００
Ａ堆積させる。ＳｒＯの格子定数は第１図りで３．６３
４ Ａ ？ＢａｚＹＣｕ３０．−６の軸の長さに極めて
近い。(Example 1) Patent application 1986 on St (100) surface
Silicon (St) was used in the substrate holder 11 in the apparatus shown in FIG.
Attach board 1. With a vacuum level of 10-9 Torr or less and a substrate temperature of 500°C, metal S is removed from the K cell 12.
While evaporating r, an oxygen beam was applied to the Sr deposited film at 50°C.
Implanted at eV, NaCl-type SrO thin film was deposited to a thickness of 500 nm.
A Deposit. The lattice constant of SrO is 3.63 in the first diagram.
4 A? BazYCu30. It is very close to the axis length of -6.
次に、このＳｒＯの上にＢａ、 Ｙ、 Ｃｕの金属をに
セル１２から蒸発させながら、酸素ビーム（０）を５０
ｅＶで打ち込んだ酸化膜をエピタキシャル成長させる。Next, while evaporating the metals Ba, Y, and Cu from the cell 12 on top of this SrO, an oxygen beam (0) was heated at 50°C.
The oxide film implanted at eV is epitaxially grown.
約２０００Ａ堆積させた薄膜の抵抗変化を第４図に示す
が、Ｔｃは約９０にである。ＳｒＯとＢａｚＹＣｕ＋（
１＋−６の結晶構造の整合性が非常によいため、すぐれ
た超伝導薄膜が得られる。The resistance change of the thin film deposited at about 2000 A is shown in FIG. 4, and Tc is about 90. SrO and BazYCu+(
Since the 1+-6 crystal structure has very good consistency, an excellent superconducting thin film can be obtained.
〔実施例２〕 実施例１の工程に引続き、ＳｒＯを２０
Ａ堆積させ、さらにＢａｚＹＣｕｓ（＋＋−６を２００
０ Ａ堆積させることによりジョセフソン接合を形成で
きる（第５図） 、 ４．２ Ｋで■ｃ〜５×１０５Ａ
ＩｃＩＩｌで２△はＢＣ３の値の約２．５倍であった。[Example 2] Following the process of Example 1, 20% of SrO was added.
A deposited and further BazYCus (++-6 at 200
A Josephson junction can be formed by depositing 0 A at 4.2 K (Fig. 5) ~ 5 x 105 A
2Δ for IcII was about 2.5 times the value for BC3.
〔実施例３〕 実施例と同じ＜ Ｓｔ （１００）面上
に５００°ＣでＳｒＯを５０ＯＡ堆積させた後、Ｌａ、
Ｓｒ。[Example 3] After depositing 50OA of SrO at 500°C on the same < St (100) plane as in Example, La,
Sr.
Ｃｕの金属をにセルより蒸発させながら、酸素ビームを
照射して（Ｌａｏ、 ｑＳｒｏ、 Ｉ）２ＣＬＩ０４を
厚さ３０００人堆積させ、第４図の特性の超伝導薄膜を
得た。While the Cu metal was evaporated from the cell, 2CLI04 was deposited to a thickness of 3,000 yen by irradiating it with an oxygen beam (Lao, qSro, I) to obtain a superconducting thin film with the characteristics shown in FIG.
以上Ｂａ、ＹＣｕ＋Ｏｔ−６および（Ｌａｏ、 、ｓｒ
ｏ、 １）２ＣＬ１０４の場合について実施例を述べた
が、Ｎａｃｌ型構造の物質として適当な材料（ＢａＯ、
ＳｒＯ，ＣａＯ等のアルカリ土類の酸化物）を選ぶこ
とにより、任意の（Ｍｌ−Ｘ Ｎｘ）ｚｃｕｏ４、ＭＮ
ｚＣｕ＋（１＋−６の薄膜をＳｔ基板、サファイア基板
等の上にエピタキシャル成長させることができる。Above Ba, YCu+Ot-6 and (Lao, , sr
o, 1) Although the example has been described for the case of 2CL104, suitable materials (BaO,
By selecting alkaline earth oxides such as SrO and CaO, any (Ml-X Nx)zcuo4, MN
A thin film of zCu+(1+-6) can be epitaxially grown on a St substrate, a sapphire substrate, etc.
（発明の効果）
Ｓｔ、サファイア、Ｚｒ（ｈなど比較的大きな単結晶が
入手できる材料を基板として用い、その上に岩塩構造の
物質をエピタキシャル成長させ、その上に高Ｔｃ超伝導
酸化物をエピタキシャル成長させることができ、広い面
積を利用できるので超伝導デバイス開発上の利点が大き
い。(Effect of the invention) Materials such as St, sapphire, and Zr (h) for which relatively large single crystals are available are used as a substrate, a substance with a rock salt structure is epitaxially grown on the substrate, and a high Tc superconducting oxide is epitaxially grown on the substrate. This is a great advantage in the development of superconducting devices because it allows the use of a large area.
第１図Ａはペロブスカイト形超伝導酸化物ＢａＰｂ１−
ｘ Ｂｉｘ ０３の結晶構造、Ｂは（Ｌａ＋−ＸＳｒｘ
）ｚｃｕｏ４の構造、ＣはＢａ２ＹＣｕ３Ｏ７−６の
構造、ＤはＮａＣｌ型のＳｒＯまたはＢｒＯの構造であ
る。
第２図は本発明の薄膜の構成、第３図は本発明に用いる
薄膜製造装置、第４図は実施例１と３の薄膜の抵抗温度
変化、第５図はＢａ２ＹＣｕｉＯ＋−６のジョセフソン
接合の特性である。
１・・・基板、 ２・・・ＮａＣｌ型薄膜層、３− （
Ｍｌ−、Ｎｘ）２Ｃｕ０４またはＭＮｚＣｕ：＋０７−
６ なる酸化物超伝導薄膜、４・・・エビ成長室、５
・・・酸素イオン源、６・・・イオンソース、７・・・
質量分離器、８・・・酸素ビーム、９・・・減速機構、
１０・・・中和機構、１１・・・基板ホルダ、１２・・
・Ｋセル、１３・・・Ｅガン、１４・・・金属元素ビー
ム、１５・・・予備排気室。Figure 1A shows perovskite superconducting oxide BaPb1-
The crystal structure of x Bix 03, B is (La+-XSrx
) structure of zcuo4, C is the structure of Ba2YCu3O7-6, and D is the structure of NaCl type SrO or BrO. Fig. 2 shows the structure of the thin film of the present invention, Fig. 3 shows the thin film manufacturing apparatus used in the invention, Fig. 4 shows the change in resistance temperature of the thin films of Examples 1 and 3, and Fig. 5 shows the Josephson junction of Ba2YCuiO+-6. It is a characteristic of DESCRIPTION OF SYMBOLS 1... Substrate, 2... NaCl type thin film layer, 3- (
Ml-, Nx)2Cu04 or MNzCu: +07-
6 oxide superconducting thin film, 4...shrimp growth chamber, 5
...Oxygen ion source, 6...Ion source, 7...
Mass separator, 8... oxygen beam, 9... deceleration mechanism,
10... Neutralization mechanism, 11... Substrate holder, 12...
・K cell, 13... E gun, 14... Metal element beam, 15... Preliminary exhaust chamber.
Claims (3)
ｕＯ＿４（Ｍ＝Ｙ、Ｌａ、希土類元素；Ｎ＝Ｂａ、Ｓｒ
、Ｃａ）またはＭＮ＿２Ｃｕ＿３Ｏ＿７＿−＿δ（δ≒
０．１〜０．２）の薄膜作製工程において、格子定数が
上記物質に近く、ＮａＣｌ型結晶構造をもつ物質の薄膜
層を基板表面にエピタキシャル成長させた後、上記の（
Ｍ＿１＿−＿ｘＮｘ）＿２ＣｕＯ＿４またはＭＮ＿２Ｃ
ｕ＿３Ｏ＿７＿−＿δの薄膜を堆積させ、エピタキシャ
ル成長させることを特徴とする高温超伝導酸化物薄膜の
製造方法。(1) High temperature superconducting oxide (M_1_-_xNx)_2C
uO_4 (M=Y, La, rare earth element; N=Ba, Sr
, Ca) or MN_2Cu_3O_7_-_δ(δ≒
0.1 to 0.2), a thin film layer of a substance having a lattice constant close to that of the above substance and having an NaCl type crystal structure is epitaxially grown on the substrate surface, and then the above (
M_1_−_xNx)_2CuO_4 or MN_2C
A method for producing a high-temperature superconducting oxide thin film, comprising depositing and epitaxially growing a thin film of u_3O_7_-_δ.
ｕＯ＿４（Ｍ＝Ｙ、Ｌａ、希土類元素；Ｎ＝Ｂａ、Ｓｒ
、Ｃａ）またはＭＮ＿２Ｃｕ＿３Ｏ＿７＿−＿δ（δ≒
０．１〜０．２）の薄膜作製工程において、格子定数が
上記物質に近く、ＮａＣｌ型結晶構造をもつ物質の薄膜
層を基板表面にエピタキシャル成長させた後、上記の（
Ｍ＿１＿−＿ｘＮｘ）＿２ＣｕＯ＿４またはＭＮ＿２Ｃ
ｕ＿３Ｏ＿７＿−＿δの薄膜を堆積させ、エピタキシャ
ル成長させた後該薄膜の上にＮａＣｌ型結晶構造の絶縁
層を１０〜３０Å堆積させ、再び（Ｍ＿１＿−＿ｘＮｘ
）＿２ＣｕＯ＿４またはＭＮ＿２Ｃｕ＿３Ｏ＿７＿−＿
δの薄膜を堆積させ、ジョセフソン接合を同時に形成す
ることを特徴とする高温超伝導酸化物薄膜の製造方法。(2) High-temperature superconducting oxide (M_1_-_xNx)_2C
uO_4 (M=Y, La, rare earth element; N=Ba, Sr
, Ca) or MN_2Cu_3O_7_-_δ(δ≒
0.1 to 0.2), a thin film layer of a substance having a lattice constant close to that of the above substance and having an NaCl type crystal structure is epitaxially grown on the substrate surface, and then the above (
M_1_−_xNx)_2CuO_4 or MN_2C
After a thin film of u_3O_7_-_δ is deposited and epitaxially grown, an insulating layer with a NaCl type crystal structure of 10 to 30 Å is deposited on the thin film, and again (M_1_-_xNx
)_2CuO_4 or MN_2Cu_3O_7_-_
A method for producing a high-temperature superconducting oxide thin film, characterized by depositing a thin film of δ and simultaneously forming a Josephson junction.
類の酸化物（ＢａＯ、ＳｒＯ、ＣａＯ）を用いることを
特徴とする特許請求の範囲第１項または第２項記載の高
温超伝導酸化物薄膜の製造方法。(3) The high-temperature superconducting oxide thin film according to claim 1 or 2, characterized in that an alkaline earth oxide (BaO, SrO, CaO) is used as the substance having the NaCl type crystal structure. manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62140895A JPS63307197A (en) | 1987-06-05 | 1987-06-05 | Production of thin film of high-temperature superconductive oxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62140895A JPS63307197A (en) | 1987-06-05 | 1987-06-05 | Production of thin film of high-temperature superconductive oxide |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63307197A true JPS63307197A (en) | 1988-12-14 |
Family
ID=15279285
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62140895A Pending JPS63307197A (en) | 1987-06-05 | 1987-06-05 | Production of thin film of high-temperature superconductive oxide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63307197A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104178808A (en) * | 2014-08-06 | 2014-12-03 | 上海交通大学 | Liquid-phase epitaxial method for preparing high-temperature superconductive artificial crystal boundary |
-
1987
- 1987-06-05 JP JP62140895A patent/JPS63307197A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104178808A (en) * | 2014-08-06 | 2014-12-03 | 上海交通大学 | Liquid-phase epitaxial method for preparing high-temperature superconductive artificial crystal boundary |
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