JPS63296507A - Fixing circuit for potential of signal line - Google Patents

Fixing circuit for potential of signal line

Info

Publication number
JPS63296507A
JPS63296507A JP62132472A JP13247287A JPS63296507A JP S63296507 A JPS63296507 A JP S63296507A JP 62132472 A JP62132472 A JP 62132472A JP 13247287 A JP13247287 A JP 13247287A JP S63296507 A JPS63296507 A JP S63296507A
Authority
JP
Japan
Prior art keywords
transistor
signal line
circuit
potential
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62132472A
Other languages
Japanese (ja)
Other versions
JPH06103818B2 (en
Inventor
Katsuhiro Hirayama
勝啓 平山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62132472A priority Critical patent/JPH06103818B2/en
Publication of JPS63296507A publication Critical patent/JPS63296507A/en
Publication of JPH06103818B2 publication Critical patent/JPH06103818B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
  • Manipulation Of Pulses (AREA)

Abstract

PURPOSE:To fix a prescribed signal stably by combining 1st and 2nd transistors (TR) being a complementary pair and a 3rd TR of a conduction type. CONSTITUTION:The 1st and 2nd TRs 11, 12 being a complementary pair and the 3rd TR 10 of a conduction type are provided, Sources, drains and gates of the 1st and 2nd TRs 11, 12 are connected in common in parallel, the common drain is connected to the gate of the 3rd TR 10, the common gate and the drain of the 3rd TR 10 are coupled and connected to the signal source 14, the common sources of the 1st and 2nd TRs 11, 12 are connected to a 1st power supply, the source of the 3rd TR is connected to a 2nd power supply respectively. Thus, the signal line is stably fixed to a prescribed level without being connected directly to the power terminal or ground terminal.

Description

【発明の詳細な説明】 産業上の利用分野 この発明は、所定の信号端子の電位を固定する手段、す
なわち、信号線電位固定回路に関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application This invention relates to means for fixing the potential of a predetermined signal terminal, that is, a signal line potential fixing circuit.

従来の技術 トランジスタ回路において、特定の信号線の電位を固定
するには、一般的に、その特定信号線を、源である回路
部分の単一あるいは複数のトランジスタの所定の電位に
固定になる様に、電源端子あるいは接地端子に直接また
は抵抗を介し接続する回路方式、あるいはその特定信号
とその源である回路部分を切断し、電源端子あるいは接
地端子に直接または抵抗を介し接続する回路方式が用い
られている。
Conventional Technology In a transistor circuit, in order to fix the potential of a specific signal line, the specific signal line is generally fixed to a predetermined potential of a single or multiple transistors in the circuit section that is the source. In this case, a circuit method is used in which the signal is connected to the power supply terminal or the ground terminal directly or through a resistor, or a circuit method is used in which the specific signal and the circuit part that is its source are disconnected and connected to the power supply terminal or the ground terminal directly or through a resistor. It is being

発明が解決しようとする問題点 かかる従来回路方式の場合、トランジスタのゲート入力
が接地端子あるいは電源端子に発生した雑音の直接影響
を受けたり、また、場合によっては、電源端子あるいは
接地端子に直結されたトランジスタのゲート電位が、そ
のソースに接続された電源電圧よりも高く、あるいは接
地電位よりも低くなる等のトランジスタ回路として不都
合を招く事もある。なお、かかる手法を半導体集積回路
の入出力端子およびその周辺回路部分等に用いた場合、
ゲートが電源端子あるいは接地端子に直結されたトラン
ジスタのドレイン側またはソース側に外部から静電気等
による過渡的な高電位のスパイクが直接印加された際に
、そのゲート酸化膜が破壊され易いという信頼性上の問
題も考慮しなければならない。
Problems to be Solved by the Invention In the case of such conventional circuit systems, the gate input of the transistor is directly affected by noise generated at the ground terminal or power supply terminal, or in some cases, it is directly connected to the power supply terminal or the ground terminal. This may cause problems for the transistor circuit, such as the gate potential of the transistor becoming higher than the power supply voltage connected to its source or lower than the ground potential. Note that when this method is used for the input/output terminals of semiconductor integrated circuits and their peripheral circuits,
Reliability that the gate oxide film is easily destroyed when a transient high potential spike due to static electricity is directly applied from the outside to the drain or source side of a transistor whose gate is directly connected to the power supply terminal or ground terminal. The above issues must also be considered.

問題点を解決するための手段 本発明は、上述の問題点を解決するためのもので、相補
対の第1.第2のトランジスタと一導電形の第3のトラ
ンジスタを有し、前記第1.第2のトランジスタを、互
いのソース、ドレインならびにゲート同士で並列に共通
接続して、その共通ドレインを前記第3のトランジスタ
のゲートに結合し、その共通ゲートと前記第3のトラン
ジスタのドレインとを結合して信号源に接続し、前記第
1、第2のトランジスタの共通ソースを第1電源に、前
記第3のトランジスタのソースを第2電源に、それぞれ
、接続してなる信号線電位固定回路である。
Means for Solving the Problems The present invention is intended to solve the above-mentioned problems, and the first . a second transistor and a third transistor of one conductivity type; The sources, drains, and gates of the second transistors are commonly connected in parallel, and the common drain is coupled to the gate of the third transistor, and the common gate and the drain of the third transistor are connected together. a signal line potential fixing circuit, which is connected to a signal source; a common source of the first and second transistors is connected to a first power source; and a source of the third transistor is connected to a second power source. It is.

作用 本発明によると、所望の信号線を、三つのトランジスタ
の組合せにより、その導電形を選択して、第1電源また
は第2電源の電位に依存した所定電位に設定することが
できる。
According to the present invention, a desired signal line can be set to a predetermined potential depending on the potential of the first power source or the second power source by selecting its conductivity type using a combination of three transistors.

実施例 以下、第1図および第2図を参照して、この発明を説明
する。第1図は、所定信号線の電位を低レベルに安定に
固定するための回路(以下、″L″固定回路と略す)を
示し、第2図は、所定信号線の電位を高レベルに安定に
固定するための回路(以下、”H″固定回路と略す)を
示す。
EXAMPLES The present invention will now be described with reference to FIGS. 1 and 2. Fig. 1 shows a circuit for stably fixing the potential of a predetermined signal line at a low level (hereinafter abbreviated as "L" fixing circuit), and Fig. 2 shows a circuit for stably fixing the potential of a predetermined signal line at a high level. A circuit (hereinafter abbreviated as "H" fixing circuit) for fixing is shown below.

第1図の”L”固定回路において、固定対象となる信号
線14は、トランジスタ回路に電源が印加された直後に
おいては、高レベルであるか低レベルであるか判別する
事ができないとしても、仮に低レベルもしくは低レベル
に近い電位であった場合、ソース側が正の回路電源Vc
cの端子13に接続されたPチャネル形MO3)ランジ
スタ10が動作し、ソース側が接地端子15に接続され
たNチャネル形MOSトランジスタ12のゲートを駆動
し、固定対象となる信号線14を接地電位(低レベル)
に安定に固定する。逆に、電源印加直後、信号線14が
高レベルもしくは高レベルに近い電位であったと仮定す
ると、ソース側が正の回路電源Vccの端子13に接続
されたNチャネルMOSトランジスタ11が動作し、前
記同様にNチャネル形MOSトランジスタ12を駆動し
、信号線14を高レベルから低レベルに逆転させ、その
後はPチャネル形MO8)ランジスタ10およびNチャ
ネル形MOSトランジスタ12により。
In the "L" fixed circuit shown in FIG. 1, even though it is not possible to determine whether the signal line 14 to be fixed is at a high level or a low level immediately after power is applied to the transistor circuit, If the potential is at a low level or close to a low level, the source side is connected to the positive circuit power supply Vc.
The P-channel type MO transistor 10 connected to the terminal 13 of (low level)
Fix it stably. Conversely, assuming that the signal line 14 is at a high level or a potential close to a high level immediately after power is applied, the N-channel MOS transistor 11 whose source side is connected to the positive terminal 13 of the circuit power supply Vcc operates, and the same as described above occurs. The N-channel MOS transistor 12 is driven to invert the signal line 14 from high level to low level, and then the P-channel MOS transistor 10 and the N-channel MOS transistor 12 are used.

同信号線14を低レベルに安定に固定する。The signal line 14 is stably fixed at a low level.

第2図の″H″固定回路においても、”L″固定回路と
同様に動作するものであるが、固定対象となる信号線2
0が電源印加面“後高レベルもしくは高レベルに近い電
位であったと仮定すると、Nチャネル形MoSトランジ
スタ16およびPチャネル形MO8トランジスタ18の
動作により、信号線20を安定に高レベルに固定する。
The "H" fixed circuit in Figure 2 operates in the same way as the "L" fixed circuit, but the signal line 2 to be fixed is
Assuming that 0 is at a high level or a potential close to a high level after the power supply surface is applied, the signal line 20 is stably fixed at a high level by the operation of the N-channel type MoS transistor 16 and the P-channel type MO8 transistor 18.

逆に信号線20が電源印加直後低レベルもしくは低レベ
ルに近い電位であったと仮定すると、初めに、Pチャネ
ル形MOSトランジスタト17が動作しPチャネル形M
O8トランジスタ18を駆動し、信号線20を低レベル
から高レベルに逆転させ、その後は、Nチャネル形MO
Sトランジスタ16およびPチャネル形MO8)ランジ
スタ18の動作により高レベルに安定に固定する。この
様に、°L″固定回路および“H″固定回路において、
信号線を直接電源端子あるいは接地端子に接続する事な
く、安定に所定のレベルに固定する事ができ、信頼性の
高い信号線電位固定回路を得る事ができる。
Conversely, assuming that the signal line 20 is at a low level or a potential close to a low level immediately after power is applied, the P-channel MOS transistor 17 operates first, and the P-channel MOS transistor 17 operates.
The O8 transistor 18 is driven, the signal line 20 is reversed from low level to high level, and then the N-channel type MO
It is stably fixed at a high level by the operation of the S transistor 16 and the P channel type MO transistor 18. In this way, in the °L" fixed circuit and the "H" fixed circuit,
It is possible to stably fix the signal line at a predetermined level without directly connecting the signal line to a power supply terminal or a ground terminal, and a highly reliable signal line potential fixing circuit can be obtained.

発明の効果 ′ 以上の説明から明らかな様に、この発明の“L″固
定回路および”H”固定回路においては、簡単なトラン
ジシスタの組合せ構成により、同トランジスタのゲート
を直接電源端子あるいは接地端子に接続する事な(所定
の信号を安定に固定でき、従来の回路方式による不都合
はことごとく排、除され、信頼性の高い信号線電位固定
回路を得る事ができる。また、構成も簡単であり、各ト
ランジス夕もほぼ最小サイズにより実現し得るため、半
導体集積回路化においても好適なものである。
Effects of the Invention' As is clear from the above explanation, in the "L" fixed circuit and "H" fixed circuit of the present invention, the gate of the transistor can be connected directly to the power supply terminal or the ground terminal by using a simple combination of transistors. (A predetermined signal can be stably fixed by connecting to , since each transistor can be realized with almost the minimum size, it is also suitable for semiconductor integrated circuits.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図および第2図は本発明の一実施例゛L”固定回路
および゛H″固定回路の各回路図である。 14.20・・・・・・固定対象の信号線、10.17
゜18・・・・・・Pチャネル形MOSトランジスタ、
11゜12.16・・・・・・Nチャネル形MOSトラ
ンジスタ、13.19・・・・・・正の回路電源端子、
15.21・・・・・・接地端子。
FIGS. 1 and 2 are circuit diagrams of an "L" fixed circuit and an "H" fixed circuit according to an embodiment of the present invention. 14.20...Signal line to be fixed, 10.17
゜18...P-channel type MOS transistor,
11゜12.16...N-channel MOS transistor, 13.19...Positive circuit power supply terminal,
15.21... Ground terminal.

Claims (1)

【特許請求の範囲】[Claims] 相補対の第1、第2のトランジスタと一導電形の第3の
トランジスタを有し、前記第1、第2のトランジスタを
、互いのソース、ドレインならびにゲート同士で並列に
共通接続して、その共通ドレインを前記第3のトランジ
スタのゲートに結合し、その共通ゲートと前記第3のト
ランジスタのドレインとを結合して信号源に接続し、前
記第1、第2のトランジスタの共通ソースを第1電源に
、前記第3のトランジスタのソースを第2電源に、それ
ぞれ、接続してなる信号線電位固定回路。
It has a complementary pair of first and second transistors and a third transistor of one conductivity type, and the first and second transistors are commonly connected in parallel with each other's sources, drains, and gates. a common drain coupled to the gate of the third transistor; the common gate and the drain of the third transistor coupled to a signal source; and the common source of the first and second transistors coupled to the first transistor. A signal line potential fixing circuit configured to connect a power source and a source of the third transistor to a second power source, respectively.
JP62132472A 1987-05-28 1987-05-28 Signal line potential fixing circuit Expired - Lifetime JPH06103818B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62132472A JPH06103818B2 (en) 1987-05-28 1987-05-28 Signal line potential fixing circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62132472A JPH06103818B2 (en) 1987-05-28 1987-05-28 Signal line potential fixing circuit

Publications (2)

Publication Number Publication Date
JPS63296507A true JPS63296507A (en) 1988-12-02
JPH06103818B2 JPH06103818B2 (en) 1994-12-14

Family

ID=15082176

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62132472A Expired - Lifetime JPH06103818B2 (en) 1987-05-28 1987-05-28 Signal line potential fixing circuit

Country Status (1)

Country Link
JP (1) JPH06103818B2 (en)

Also Published As

Publication number Publication date
JPH06103818B2 (en) 1994-12-14

Similar Documents

Publication Publication Date Title
JPS5869124A (en) Semiconductor integrated circuit
US4591742A (en) Output circuit capable of being connected to another circuit having transistors of any conduction type
JP2959449B2 (en) Output circuit
JPH0786917A (en) Inverter circuit
KR970067337A (en) High Voltage Level Shift Circuit Including CMOS Transistors with Gate Isolation Thin Films
US5952866A (en) CMOS output buffer protection circuit
JPS5823010B2 (en) differential amplifier device
JPS63296507A (en) Fixing circuit for potential of signal line
JP3386661B2 (en) Output buffer
KR960027331A (en) Buffer circuit and bias circuit
JPH0685497B2 (en) Semiconductor integrated circuit
JPH0257345B2 (en)
JPS63176015A (en) Integrated circuit
JPS62222713A (en) Cmos inverter circuit for delay
JPS63299508A (en) Potential fixing circuit for signal line
JP3106593B2 (en) Differential amplifier circuit
JPH03204219A (en) Cmos latch circuit
JPS6125257B2 (en)
JP2541289B2 (en) Output circuit
JPH02268510A (en) Bus data holding circuit consisting of gate array device
KR100281146B1 (en) CMOS NAND Circuit
JP2757632B2 (en) Test signal generation circuit
JPH0446416A (en) Logic circuit having two input and one output
JPH03149873A (en) Semiconductor integrated circuit device
JPS6025323A (en) Semiconductor integrated circuit