JPS6329415B2 - - Google Patents

Info

Publication number
JPS6329415B2
JPS6329415B2 JP57181482A JP18148282A JPS6329415B2 JP S6329415 B2 JPS6329415 B2 JP S6329415B2 JP 57181482 A JP57181482 A JP 57181482A JP 18148282 A JP18148282 A JP 18148282A JP S6329415 B2 JPS6329415 B2 JP S6329415B2
Authority
JP
Japan
Prior art keywords
layer
light
photosensitive
solid
imaging device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57181482A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58103165A (ja
Inventor
Masatoshi Tabei
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of JPS58103165A publication Critical patent/JPS58103165A/ja
Publication of JPS6329415B2 publication Critical patent/JPS6329415B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H10F39/1825—Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/191—Photoconductor image sensors

Landscapes

  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Light Receiving Elements (AREA)
JP57181482A 1981-12-15 1982-10-18 ３層４階構造の固体カラ−撮像デバイス Granted JPS58103165A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33092881A 1981-12-15 1981-12-15
US330928 1981-12-15

Publications (2)

Publication Number Publication Date
JPS58103165A JPS58103165A (ja) 1983-06-20
JPS6329415B2 true JPS6329415B2 (enrdf_load_stackoverflow) 1988-06-14

Family

ID=23291905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57181482A Granted JPS58103165A (ja) 1981-12-15 1982-10-18 ３層４階構造の固体カラ−撮像デバイス

Country Status (1)

Country Link
JP (1) JPS58103165A (enrdf_load_stackoverflow)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4438455A (en) * 1981-12-15 1984-03-20 Fuji Photo Film Co., Ltd. Solid-state color imager with three layer four story structure
JPS6015969A (ja) * 1983-07-06 1985-01-26 Mitsubishi Electric Corp カラ−固体撮像素子
JPS6018956A (ja) * 1983-07-12 1985-01-31 Seiko Epson Corp カラ−固体撮像素子
US6373117B1 (en) * 1999-05-03 2002-04-16 Agilent Technologies, Inc. Stacked multiple photosensor structure including independent electrical connections to each photosensor
US20050205879A1 (en) 2004-03-17 2005-09-22 Fuji Photo Film Co., Ltd. Photoelectric converting film stack type solid-state image pickup device
US7400023B2 (en) 2004-03-18 2008-07-15 Fujifilm Corporation Photoelectric converting film stack type solid-state image pickup device and method of producing the same
JP4751576B2 (ja) 2004-03-18 2011-08-17 富士フイルム株式会社 光電変換膜積層型固体撮像装置
JP2005268479A (ja) 2004-03-18 2005-09-29 Fuji Film Microdevices Co Ltd 光電変換膜積層型固体撮像装置
JP2005268476A (ja) 2004-03-18 2005-09-29 Fuji Film Microdevices Co Ltd 光電変換膜積層型固体撮像装置
JP2005268609A (ja) 2004-03-19 2005-09-29 Fuji Photo Film Co Ltd 多層積層型多画素撮像素子及びテレビカメラ
JP4533667B2 (ja) 2004-05-28 2010-09-01 富士フイルム株式会社 光電変換膜積層型固体撮像装置
JP4714428B2 (ja) 2004-05-28 2011-06-29 富士フイルム株式会社 光電変換膜積層型固体撮像装置及びその製造方法
US7268369B2 (en) 2004-07-06 2007-09-11 Fujifilm Corporation Functional device and method for producing the same
US7642711B2 (en) 2004-07-06 2010-01-05 Fujifilm Corporation Functional layer having wiring connected to electrode and barrier metal between electrode and wiring
JP2006228938A (ja) 2005-02-17 2006-08-31 Fuji Photo Film Co Ltd 光電変換膜積層型固体撮像素子
JP4547281B2 (ja) 2005-02-18 2010-09-22 富士フイルム株式会社 光電変換膜積層型固体撮像素子
JP4500706B2 (ja) 2005-02-23 2010-07-14 富士フイルム株式会社 光電変換膜積層型固体撮像素子
JP4911445B2 (ja) 2005-06-29 2012-04-04 富士フイルム株式会社 有機と無機のハイブリッド光電変換素子
JP4511442B2 (ja) 2005-09-30 2010-07-28 富士フイルム株式会社 感度可変型撮像素子及びこれを搭載した撮像装置
JP4511441B2 (ja) 2005-09-30 2010-07-28 富士フイルム株式会社 感度可変型撮像素子及びこれを搭載した撮像装置
JP2007201009A (ja) 2006-01-24 2007-08-09 Fujifilm Corp 固体撮像素子
JP4719597B2 (ja) 2006-03-16 2011-07-06 富士フイルム株式会社 光電変換素子及び固体撮像素子
KR100901236B1 (ko) * 2007-05-16 2009-06-08 주식회사 동부하이텍 이미지센서 및 그 제조방법
WO2013190759A1 (ja) 2012-06-21 2013-12-27 パナソニック株式会社 固体撮像素子及びその製造方法
JP6157341B2 (ja) * 2013-12-19 2017-07-05 野洲メディカルイメージングテクノロジー株式会社 アクティブマトリクスアレイ基板、信号処理装置、受光装置及び表示装置

Also Published As

Publication number Publication date
JPS58103165A (ja) 1983-06-20

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