JPS63293950A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS63293950A JPS63293950A JP12829587A JP12829587A JPS63293950A JP S63293950 A JPS63293950 A JP S63293950A JP 12829587 A JP12829587 A JP 12829587A JP 12829587 A JP12829587 A JP 12829587A JP S63293950 A JPS63293950 A JP S63293950A
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- film
- wiring layer
- silicon resin
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims 2
- 239000011229 interlayer Substances 0.000 claims abstract description 10
- 229920002050 silicone resin Polymers 0.000 claims description 14
- 239000010410 layer Substances 0.000 abstract description 25
- 239000002184 metal Substances 0.000 abstract description 16
- 229910052751 metal Inorganic materials 0.000 abstract description 16
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 10
- 150000004767 nitrides Chemical class 0.000 abstract description 9
- 238000005530 etching Methods 0.000 abstract description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000001681 protective effect Effects 0.000 abstract description 6
- 229920005989 resin Polymers 0.000 abstract description 6
- 239000011347 resin Substances 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 238000001312 dry etching Methods 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、多層配線に係シ、特に眉間容量を低減するの
に好適なエアーブリッジ配線に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to multilayer wiring, and particularly to air bridge wiring suitable for reducing glabellar capacitance.
従来、王アープリッジ配線の層間膜として、ホトレジス
トが用いられていた。これは後に層間膜を除去する必要
があったからである。しかし、ホトレジストでは、耐熱
性が不足するため、配線金属の堆積は低温で行う必要が
アシ、配線層の形成法、配線金属の種類に制限がちった
。また配線層の強度にも問題がめった。Conventionally, photoresist has been used as an interlayer film for Arpridge wiring. This is because it was necessary to remove the interlayer film later. However, since photoresist lacks heat resistance, the wiring metal must be deposited at a low temperature, and there are restrictions on the method of forming the wiring layer and the type of wiring metal. Also, problems arose with the strength of the wiring layer.
従来技術は、眉間膜にホトレジストを用いており、後に
除去されることもあって、層間膜の耐熱性について配慮
がされていなかった。このため。In the conventional technology, a photoresist is used for the glabellar membrane, which may be removed later, and no consideration is given to the heat resistance of the interlayer membrane. For this reason.
配線層の形成は、低温（例えば２０００以下）で行う必
要があり、配線層の形成方法、配線金属が制限され、接
着性の不良や接触抵抗及び配線抵抗が増大するという問
題があった。The formation of the wiring layer must be performed at a low temperature (for example, 2000 ℃ or less), which limits the method of forming the wiring layer and the metal used for the wiring, resulting in problems such as poor adhesion, increased contact resistance, and increased wiring resistance.
本発明の目的は、眉間膜に耐熱性の高い材料を使用する
ことによシ、配線層の形成方法、配線金属の種類の制限
なしにエアーブリッジ配線を形成することにある。An object of the present invention is to form an air bridge wiring without restrictions on the wiring layer formation method or the type of wiring metal by using a material with high heat resistance for the glabellar membrane.
上記目的は１層間膜としてシリコン樹脂を使用すること
によシ達成される。The above object is achieved by using silicone resin as one interlayer film.
上記目的を達成するためには、耐熱性の高い材料を層間
膜として使用すればよいのだが、エアーブリッジ用層間
膜としては、後に、下地の絶縁膜がエツチングされない
条件で除去する必要がある。In order to achieve the above object, it is sufficient to use a material with high heat resistance as an interlayer film, but as an air bridge interlayer film, it is necessary to remove it later under conditions that do not etch the underlying insulating film.
このため、使用する材料は、下地絶縁膜と充分な選択比
を持ってエツチングできるものに限定される、さらに、
この材料により平坦化も行わなければならない。この目
的のために、シリコン樹脂は塗布により膜形成が可能で
あり、平坦化が容易に行うことができ、耐熱性も高い。Therefore, the materials used are limited to those that can be etched with sufficient selectivity to the underlying insulating film.
Planarization must also be achieved with this material. For this purpose, silicone resin can be formed into a film by coating, can be easily flattened, and has high heat resistance.
まだエツチングは、有機膜と無機膜の中間的な性質を有
しており、シリコン樹脂中の炭素含有率を加熱あるいは
ＵＶ照射によって変化させることにより、有機質膜から
無機質膜まで性質を変化させることができる。However, etching has properties intermediate between organic and inorganic films, and by changing the carbon content in the silicone resin by heating or UV irradiation, it is possible to change the properties from an organic film to an inorganic film. can.
シリコン樹脂をエアーブリッジ配線に用いた場合、優れ
た平坦化能力によりウェハ面を平坦にすることができ、
さらに耐熱性が高いことから。When silicone resin is used for air bridge wiring, the wafer surface can be made flat due to its excellent flattening ability.
Furthermore, it has high heat resistance.
Ａｕ、Ｍｏ、Ｔｉ、Ｐｔ等の金属を蒸着等に温度の上昇
する方法で形成することができる。A metal such as Au, Mo, Ti, or Pt can be formed by a method that increases the temperature, such as by vapor deposition.
さらに配線層のない部分に絶縁膜層を形成することによ
り、絶縁膜層が柱の役割をするため、強度的にも優れた
エアーブリッジ配線を実現できる。Furthermore, by forming an insulating film layer in a portion where there is no wiring layer, the insulating film layer plays the role of a pillar, making it possible to realize air bridge wiring with excellent strength.
また、コンタクトホール部へ金属層を埋込むことも可能
であシ、コンタクト抵抗の小さい、強度的にも強い、層
間容量の小さい、理想的なエアーブリッジ配線を実現で
きる。Furthermore, it is also possible to bury a metal layer in the contact hole portion, making it possible to realize an ideal air bridge interconnection with low contact resistance, high strength, and low interlayer capacitance.
以下に本発明の３つの実施例を説明する。第１図に示す
第１の実施例では、第１配線層１を加工後、保護膜であ
るプラズマ窒化膜２を堆積する（■）。保護膜は、シリ
コン樹脂と十分なエツチングの選択比を持つものであれ
ばプラズマ窒化膜以外でもよい。次にシリコン樹脂３紮
回転塗布し平坦化を行う。ドライエツチングによりコン
タクトホール１０を加工する（■）。さらに第２配線層
４を形成した後、シリコン樹脂を弗化水素酸でエツチン
グして除去し、エアーギャップ２０を形成する（■）。Three embodiments of the present invention will be described below. In the first embodiment shown in FIG. 1, after processing the first wiring layer 1, a plasma nitride film 2 as a protective film is deposited (■). The protective film may be other than a plasma nitride film as long as it has a sufficient etching selectivity with respect to the silicon resin. Next, three coats of silicone resin are applied by rotation and flattened. Contact hole 10 is processed by dry etching (■). Further, after forming the second wiring layer 4, the silicone resin is removed by etching with hydrofluoric acid to form an air gap 20 (■).
これは、弗化水素酸でシリコン樹脂（例えば東京応化製
、製品名ＯＣＤ −’ｒｙｐｅ ７−２００００ ）は
速いエツチング速度（〜２μｍ／ｍ１ｎ）でエツチング
されるが、プラズマ窒化膜はエツチングされないことを
利用し、プラズマ’ｆｆｌ化膜は素子のパッシベーショ
ンを施したものである。This means that silicon resin (for example, Tokyo Ohka Co., Ltd., product name: OCD-'rype 7-20000) is etched with hydrofluoric acid at a high etching rate (~2 μm/ml), but plasma nitride film is not etched. The plasma 'ffl film is used to passivate the device.
エアーブリッジの距離が長くて、配線ブリッジの強度が
不足する場合に最適な第２の実施例を第２図に示す。第
１配線層１加工後、配線層のない部分に眉間の膜厚と同
じ厚さの絶縁膜層７を形成する。絶縁膜層７は、ここで
は絶縁膜としたが。A second embodiment is shown in FIG. 2, which is most suitable for cases where the air bridge distance is long and the strength of the wiring bridge is insufficient. After processing the first wiring layer 1, an insulating film layer 7 having the same thickness as the glabella is formed in a portion where there is no wiring layer. The insulating film layer 7 is an insulating film here.
金属であってもかまわない。また形成用ホトマスクは１
例えば第１配線層のホトマスク’ｒ反転プローデン処理
したものを使用すると作成の手間が省は平坦化し易いっ
さらに保護膜であるプラズマ窒化膜２を堆積しく■）、
シリコン樹脂３を回転塗布し平坦化を行う（■）。シリ
コン樹脂をエッチバックし、絶縁膜７の表面が現われる
ようにする。It doesn't matter if it's metal. Also, the photomask for formation is 1
For example, if a photomask for the first wiring layer that has been subjected to inversion proden treatment is used, the preparation process will be saved, flattening will be easier, and the plasma nitride film 2, which is a protective film, will be deposited (■).
Spread silicone resin 3 and flatten it (■). The silicone resin is etched back so that the surface of the insulating film 7 is exposed.
コンタクトホール１０をドライエツチングにょシ加工す
る（■）。第２配線層４を形成し、シリコン樹脂３を弗
化水素酸によって除去するとエアーギャップ２０ができ
る（■）。この第２の実施例では、絶縁膜７によシ第２
配線層４が支えられているため、強度的信頼度は高いと
いう効果がある。Dry etching the contact hole 10 (■). When the second wiring layer 4 is formed and the silicone resin 3 is removed with hydrofluoric acid, an air gap 20 is created (■). In this second embodiment, the insulating film 7 has a second
Since the wiring layer 4 is supported, there is an effect that reliability in terms of strength is high.
さらにコンタクト抵抗を考慮したエアーブリッジ配線の
実施例を実施例３として第３図に示す。Furthermore, an example of air bridge wiring in consideration of contact resistance is shown in FIG. 3 as Example 3.
第２図に示した例と同様に第１配線層１を加工後、配線
層のない部分に眉間の膜厚だけ絶縁膜層７を形成する。After processing the first wiring layer 1 in the same manner as in the example shown in FIG. 2, an insulating film layer 7 with a thickness between the eyebrows is formed in the portion where there is no wiring layer.
さらに保護膜であるプラズマ窒化膜を堆積しく■）、シ
リコン樹脂３を回転塗布し平坦化を行う（■）。シリコ
ン樹脂をエッチバックし、絶縁膜７０表面が現われるよ
うにする（■）。Furthermore, a plasma nitride film as a protective film is deposited (■), and silicone resin 3 is spin-coated to flatten it (■). Etch back the silicone resin so that the surface of the insulating film 70 is exposed (■).
コンタクトホール加工用ホトレジスト６を形成し、ドラ
イエツチングによりコンタクトホールを形成する。次に
ホトレジスト６を残したまま、コンタクトホールの深さ
と同じ膜厚だけコンタクトホール埋込用金属５を堆積す
る（■）。この後ホトレジスト除去と同時にコンタクト
ホール以外の金属を除去する。次に第２配線層４金形成
する（■）。A photoresist 6 for contact hole processing is formed, and contact holes are formed by dry etching. Next, while leaving the photoresist 6, contact hole filling metal 5 is deposited to a thickness equal to the depth of the contact hole (■). Thereafter, the metal other than the contact hole is removed at the same time as the photoresist is removed. Next, a second wiring layer (4 gold) is formed (■).
これにより理想的なエアーブリッジ配線を実現できる。This makes it possible to achieve ideal air bridge wiring.
本発明によれば１層間膜に耐熱性の高いシリコン樹脂を
使用するため、配線金属形成時の温度制限を無くするこ
とができるため、配線金属及び。According to the present invention, since a highly heat-resistant silicone resin is used for one interlayer film, there is no temperature restriction when forming wiring metal.
その形成方法の制約がなくなる効果がある。また高温で
配線形成できるだめ接着カ、信頼性も向上する。This has the effect of eliminating restrictions on the formation method. Furthermore, since wiring can be formed at high temperatures, adhesion strength and reliability are improved.
第１図は本発明の第１の実施例の工程を示す断面図、第
２図は本発明の第２の実施例の工程金示す断面図、第３
図は本発明の第３の実施例の工程を示す断面図である。
１・・・第１配線金属、２・・・プラズマ窒化膜、３・
・・シリコン樹脂、４・・・第２配線金属、５・・・コ
ンタクトホール埋込用金属、６・・・ホトレジスト、７
・・・絶縁第 １図FIG. 1 is a sectional view showing the process of the first embodiment of the present invention, FIG. 2 is a sectional view showing the process of the second embodiment of the invention, and FIG.
The figure is a sectional view showing the steps of the third embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... First wiring metal, 2... Plasma nitride film, 3...
... Silicone resin, 4... Second wiring metal, 5... Contact hole filling metal, 6... Photoresist, 7
...Insulation Figure 1
Claims (1)
に除去される層間膜にシリコン樹脂を用いたことを特徴
とする半導体装置。1. A semiconductor device characterized in that, in air bridge wiring in multilayer wiring, silicone resin is used for an interlayer film that is later removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12829587A JPS63293950A (en) | 1987-05-27 | 1987-05-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12829587A JPS63293950A (en) | 1987-05-27 | 1987-05-27 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63293950A true JPS63293950A (en) | 1988-11-30 |
Family
ID=14981266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12829587A Pending JPS63293950A (en) | 1987-05-27 | 1987-05-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63293950A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01189939A (en) * | 1988-01-26 | 1989-07-31 | Nec Corp | Semiconductor integrated circuit |
| JPH01264243A (en) * | 1988-04-14 | 1989-10-20 | Nec Corp | Semiconductor device and its manufacture |
| US5556805A (en) * | 1990-04-27 | 1996-09-17 | Fujitsu Limited | Method for producing semiconductor device having via hole |
-
1987
- 1987-05-27 JP JP12829587A patent/JPS63293950A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01189939A (en) * | 1988-01-26 | 1989-07-31 | Nec Corp | Semiconductor integrated circuit |
| JPH01264243A (en) * | 1988-04-14 | 1989-10-20 | Nec Corp | Semiconductor device and its manufacture |
| US5556805A (en) * | 1990-04-27 | 1996-09-17 | Fujitsu Limited | Method for producing semiconductor device having via hole |
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