JPS63289825A - 半導体製造装置 - Google Patents

半導体製造装置

Info

Publication number
JPS63289825A
JPS63289825A JP62126653A JP12665387A JPS63289825A JP S63289825 A JPS63289825 A JP S63289825A JP 62126653 A JP62126653 A JP 62126653A JP 12665387 A JP12665387 A JP 12665387A JP S63289825 A JPS63289825 A JP S63289825A
Authority
JP
Japan
Prior art keywords
gold wire
clamper
tension
gold
guide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62126653A
Other languages
English (en)
Inventor
Yukimitsu Ono
小野　如満
Koichi Azuma
孝一 東
Sumio Ueno
上野　澄男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP62126653A priority Critical patent/JPS63289825A/ja
Publication of JPS63289825A publication Critical patent/JPS63289825A/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/78621—Holding means, e.g. wire clampers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/78621—Holding means, e.g. wire clampers
    • H01L2224/78631—Means for wire tension adjustments
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009—Pre-treatment of the connector or the bonding area
    • H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
    • H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
    • H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
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    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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    • H01L2924/01079—Gold [Au]
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    • H01L2924/01082—Lead [Pb]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 〔産業上のネ１１用分野〕 この発明は、半導体の製造装置、特に供給する金線のた
るみ防止に関するものである。
〔従来の技術〕
従来の半導体製造装置としては、その要部を斜視図で示
す第２図のようなものが用いうわている。
図において、１は、金線スプール２を具備した自動金線
供給機、３は、金線Ｋにバックテンシコンを加えるため
のエアＡを吐出するエアテンショナ、４はタッチセンサ
、２０．２０は、金線Ｋを保持案内する金線ガイド、５
は、金線にのワイヤリングを調整する第２クランパ、６
は、同じく第１クランパ、７は、金線にを貫通保持する
キャピラリ８を装備する超音波ホーン、９は、電気トー
チ、Ｌは、リードフレーム、Ｈは、半導体素子である。
叙上の構成となっているので、その動作について述べる
と、半導体素子ＨからリードフレームＬに、ワイヤリン
グを行う動作において、金線には金線スプール２から必
要量なげ自動金線供給機１によフて供給される。このと
き金線Ｋには、エアテンショナ３から吐出されるエアＡ
により、常にバックテンションが加えられており、こわ
によって金線にのたるみの発生が防止されている。
また、タッチセンサ４から第２クランパ５までの間は、
金線ガイド２０．２０により金線には保持案内されてい
る。
（発明が解決しようとする問題点） 従来の半導体製造装置は以上のように構成されているの
で、金線に十分なバックテンションがかからないばかり
か、バックテンションを加えている場所から第２クラン
パまでの距離が長く、かつ、金線ガイド等が存在するた
め、第２クランパよりも上方においてループのたるみや
金線ガイドへの引っ掛かりが発生し、これが、ワイヤボ
ンド時のルーピング不良を引き起こす主原因となってい
た。
この発明は、上記の事情に鑑みてなされたもので、金線
に十分なバックテンションを加えることができるととも
に、第２クランパの直上において金線のたるみや引フ掛
かつか発生しない製造装置を得ることを目的とする。
〔問題点を解決するための手段〕
この発明に係る半導体製造装置、ワイヤリングする際の
金線に第２クランパの直−ヒでバックテンションを加え
る手段を設けた構成としたものである。
（作用） この発明の半導体製造装置は、ワイヤボンド時に第２ク
ランプから金線を上方へ付勢している状態を保持するた
め、ワイヤリング不良の原因となる第２クランパからテ
ンション付加手段までの金線にたるみや引っ掛かりを生
ずることがない。
〔実施例〕
以下、本発明の一実施例を第１図に基づいて説明する。
なお、従来例と同一の部材等は同一の符号を用い、その
説明は省略する。
本−実施例は、その要部を斜視図で示す第１図に見られ
るように、特徴とするところは、第２図に示した従来例
の金線ガイド２０．２０を廃し、第２クランパ７の直上
に、バックテンション付加手段として、市販の真空ガイ
ド（アダマンド工業株式会社製）１０を設置し、その貫
通孔１０ａを通ワて金線Ｋを第２クランパ７の方へ導く
ようにしたことである。
次に、作用について述べる。
自動金線供給機１から送り出された金ｆｉＫは、タッチ
センサ４上方を通り真空ガイド１０へ導かれるが、この
ときエアテンショナ３から吹き出されるエアＡによ、っ
て下方へ押されているので、金線にの風圧を受けた部分
がたるんで前記タッチセンサ４に接触すると、その信号
を受けた前記供給機ｌは金線にの送出しを停止する。続
いて第２クランパ５により金線Ｋが引き下げられ、前述
のたるみ部分が浮き上ると、再び供給機１から金線にが
供給され、以上の動作が繰り返される。
そして、第２クランパ７と第１クランパ８とは、共に上
昇下降を繰返しつつ、その間に交互に金線にの把持と開
放とを行うことによって該金線Ｋを下方へ引きＦげてキ
ャピラリ８へ送り込む。
送り込まれた金線にはキャピラリ８の下端に突出し、第
２クランパ５に把持されて上昇したとき電気トーチ９に
より金ボールが形成され、第２クランパ５とキャピラリ
８との下降により半導体素子Ｈに圧接される。このとき
超音波ホーン７が、その伸縮を利用して超音波振動を加
えて新生面同士の結合を促す。次いで、第２クランパ５
の開放と同時に第１クランパ６が金線にを持ち上げて開
放し、ＸＹテーブル（不図示）が８動じてリードフレー
ムＬをキャピラリ８の下に設定する。そこで該キャピラ
リ８が金線にをリードフレームしに超音波ホーン７の動
作も加えて圧着した後、電気トーチ９により金線にが金
ボールを作って切断される。モしてＸＹテーブルが移動
して次に半導体素子Ｈをキャピラリ８の下に設定する。
上記の動作中、真空ガイド１０の貫通孔１０ａ内では、
吸気口１０ｓから吸気されることにより矢印Ｍ方向へ張
力が発生しており、常に金線にに対し該張力が作用して
いるため、ワイヤリング時のルーピング不良の原因とな
る第２クランパ５上品の金線にのたるみや引っ掛かりは
、全く発生しない。また、真空カイト１０から上部に金
ｆｉＫのたるみがいくら存在しても、ワイヤリング時の
ルーピング特性に影響することは全くない。
なお、面記張力は、吸気圧力を圧力計等を用いて制御す
ることにより、自在に変換可能である。
〔発明の効果〕
以上説明したように本発明は、第２クランパの直上に真
空ガイドを設置する構成としたため、該真空ガイドを通
過した先の金線部分に常にバックテンションを加えてい
るので、第２クランパ上部の金線のたるみや引っ掛かり
の発生を阻止し、したがってワイヤポンディング時のル
ーピング不良が根絶され、高品質の製品が得られるとい
う効果がある。
【図面の簡単な説明】
第１図は、本発明の一実施例の要部を示す斜視図、第２
図は、従来例の第１図相当図である。 ５−−−−−−第２クランプ １０・・・・・・真空ガイド Ｋ・・・・・・金線 Ｈ・−−−−・半導体素子 し・−・・・リードフレーム

Claims (1)

    【特許請求の範囲】
  1. 半導体素子とリードフレームとを電気的に接続するワイ
    ヤボンド工程において、半導体素子からリードフレーム
    へとワイヤリングする際の金線に、バックテンションを
    加える手段を第２クランパの直上に設けたことを特徴と
    する半導体製造装置。
JP62126653A 1987-05-21 1987-05-21 半導体製造装置 Pending JPS63289825A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62126653A JPS63289825A (ja) 1987-05-21 1987-05-21 半導体製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62126653A JPS63289825A (ja) 1987-05-21 1987-05-21 半導体製造装置

Publications (1)

Publication Number Publication Date
JPS63289825A true JPS63289825A (ja) 1988-11-28

Family

ID=14940539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62126653A Pending JPS63289825A (ja) 1987-05-21 1987-05-21 半導体製造装置

Country Status (1)

Country Link
JP (1) JPS63289825A (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5031821A (en) * 1988-08-19 1991-07-16 Hitachi, Ltd. Semiconductor integrated circuit device, method for producing or assembling same, and producing or assembling apparatus for use in the method
US5037023A (en) * 1988-11-28 1991-08-06 Hitachi, Ltd. Method and apparatus for wire bonding

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