JPS63288018A - 電子ビーム露光方法 - Google Patents

電子ビーム露光方法

Info

Publication number
JPS63288018A
JPS63288018A JP63082326A JP8232688A JPS63288018A JP S63288018 A JPS63288018 A JP S63288018A JP 63082326 A JP63082326 A JP 63082326A JP 8232688 A JP8232688 A JP 8232688A JP S63288018 A JPS63288018 A JP S63288018A
Authority
JP
Japan
Prior art keywords
pattern
electron beam
monitor
beam exposure
exposure method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP63082326A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0442819B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kazuhiro Tanaka
和裕 田中
Hiroaki Morimoto
森本　博明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP63082326A priority Critical patent/JPS63288018A/ja
Publication of JPS63288018A publication Critical patent/JPS63288018A/ja
Publication of JPH0442819B2 publication Critical patent/JPH0442819B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Electron Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP63082326A 1988-04-05 1988-04-05 電子ビーム露光方法 Granted JPS63288018A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63082326A JPS63288018A (ja) 1988-04-05 1988-04-05 電子ビーム露光方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63082326A JPS63288018A (ja) 1988-04-05 1988-04-05 電子ビーム露光方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP57217177A Division JPS59105647A (ja) 1982-12-09 1982-12-09 電子ビーム露光方法

Publications (2)

Publication Number Publication Date
JPS63288018A true JPS63288018A (ja) 1988-11-25
JPH0442819B2 JPH0442819B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-07-14

Family

ID=13771432

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63082326A Granted JPS63288018A (ja) 1988-04-05 1988-04-05 電子ビーム露光方法

Country Status (1)

Country Link
JP (1) JPS63288018A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105647A (ja) * 1982-12-09 1984-06-19 Mitsubishi Electric Corp 電子ビーム露光方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59105647A (ja) * 1982-12-09 1984-06-19 Mitsubishi Electric Corp 電子ビーム露光方法

Also Published As

Publication number Publication date
JPH0442819B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-07-14

Similar Documents

Publication Publication Date Title
JPH1069066A (ja) マスクおよびその検査方法ならびに露光方法
US5296917A (en) Method of monitoring accuracy with which patterns are written
JPS6233739B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS62115830A (ja) 露光方法
JPS63288018A (ja) 電子ビーム露光方法
JPS6344220B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS60210839A (ja) レチクルおよびその検査方法
US7186481B2 (en) Flare measuring mask and flare measuring method of semiconductor aligner
US6316152B1 (en) OPC method to improve e-beam writing time
US5766802A (en) Photomask
JPS6232783B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH04237115A (ja) 描画パターンの精度モニタ方法
JPS604216A (ja) 電子ビ−ム露光方法
JP2892068B2 (ja) 荷電ビーム描画方法
JPS5996729A (ja) ホトマスク等の位置精度測定方法
JPS6017917A (ja) 電子ビ−ム露光方法
JPS60202933A (ja) レチクルの検査方法
JPS63134A (ja) レチクルの検査方法
KR0146240B1 (ko) 패턴 중첩도 측정마크 제조방법
JPH02125256A (ja) フォトマスク
US6338923B1 (en) Photolithography mask having monitoring marks and manufacturing method thereof
JPH025407A (ja) 電子線描画用接続精度測定方法
JPH03282546A (ja) レチクル
JPH0260120A (ja) 重ね合せ精度評価方法
JPS62273725A (ja) マスク合わせ精度評価用バ−ニアパタ−ン

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees