JPS6328500B2 - - Google Patents
Info
- Publication number
- JPS6328500B2 JPS6328500B2 JP56151767A JP15176781A JPS6328500B2 JP S6328500 B2 JPS6328500 B2 JP S6328500B2 JP 56151767 A JP56151767 A JP 56151767A JP 15176781 A JP15176781 A JP 15176781A JP S6328500 B2 JPS6328500 B2 JP S6328500B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- capacitance
- variable
- mosfet
- diffusion layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 22
- 239000010408 film Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 1
- 238000010168 coupling process Methods 0.000 claims 1
- 238000005859 coupling reaction Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 description 24
- 239000003990 capacitor Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- 230000003068 static effect Effects 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 230000002427 irreversible effect Effects 0.000 description 3
- 230000006378 damage Effects 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15176781A JPS5853864A (ja) | 1981-09-25 | 1981-09-25 | 半導体可変容量素子 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15176781A JPS5853864A (ja) | 1981-09-25 | 1981-09-25 | 半導体可変容量素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5853864A JPS5853864A (ja) | 1983-03-30 |
JPS6328500B2 true JPS6328500B2 (US20100012521A1-20100121-C00001.png) | 1988-06-08 |
Family
ID=15525842
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15176781A Granted JPS5853864A (ja) | 1981-09-25 | 1981-09-25 | 半導体可変容量素子 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5853864A (US20100012521A1-20100121-C00001.png) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0259794U (US20100012521A1-20100121-C00001.png) * | 1988-10-27 | 1990-05-01 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62179162A (ja) * | 1986-01-31 | 1987-08-06 | Seiko Instr & Electronics Ltd | 半導体可変容量素子 |
JPS62243405A (ja) * | 1986-04-16 | 1987-10-23 | Seiko Instr & Electronics Ltd | 圧電振動子発振回路 |
JPH0642551B2 (ja) * | 1987-11-12 | 1994-06-01 | 株式会社東芝 | 不揮発性半導体メモリ |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53115185A (en) * | 1977-03-17 | 1978-10-07 | Sanyo Electric Co Ltd | Memory type variable capacitive device |
-
1981
- 1981-09-25 JP JP15176781A patent/JPS5853864A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53115185A (en) * | 1977-03-17 | 1978-10-07 | Sanyo Electric Co Ltd | Memory type variable capacitive device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0259794U (US20100012521A1-20100121-C00001.png) * | 1988-10-27 | 1990-05-01 |
Also Published As
Publication number | Publication date |
---|---|
JPS5853864A (ja) | 1983-03-30 |