JPS6328500B2 - - Google Patents

Info

Publication number
JPS6328500B2
JPS6328500B2 JP56151767A JP15176781A JPS6328500B2 JP S6328500 B2 JPS6328500 B2 JP S6328500B2 JP 56151767 A JP56151767 A JP 56151767A JP 15176781 A JP15176781 A JP 15176781A JP S6328500 B2 JPS6328500 B2 JP S6328500B2
Authority
JP
Japan
Prior art keywords
electrode
capacitance
variable
mosfet
diffusion layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56151767A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5853864A (ja
Inventor
Yoshio Hatsutori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SEIKO DENSHI KOGYO KK
Original Assignee
SEIKO DENSHI KOGYO KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SEIKO DENSHI KOGYO KK filed Critical SEIKO DENSHI KOGYO KK
Priority to JP15176781A priority Critical patent/JPS5853864A/ja
Publication of JPS5853864A publication Critical patent/JPS5853864A/ja
Publication of JPS6328500B2 publication Critical patent/JPS6328500B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Non-Volatile Memory (AREA)
JP15176781A 1981-09-25 1981-09-25 半導体可変容量素子 Granted JPS5853864A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15176781A JPS5853864A (ja) 1981-09-25 1981-09-25 半導体可変容量素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15176781A JPS5853864A (ja) 1981-09-25 1981-09-25 半導体可変容量素子

Publications (2)

Publication Number Publication Date
JPS5853864A JPS5853864A (ja) 1983-03-30
JPS6328500B2 true JPS6328500B2 (US06826419-20041130-M00005.png) 1988-06-08

Family

ID=15525842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15176781A Granted JPS5853864A (ja) 1981-09-25 1981-09-25 半導体可変容量素子

Country Status (1)

Country Link
JP (1) JPS5853864A (US06826419-20041130-M00005.png)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0259794U (US06826419-20041130-M00005.png) * 1988-10-27 1990-05-01

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62179162A (ja) * 1986-01-31 1987-08-06 Seiko Instr & Electronics Ltd 半導体可変容量素子
JPS62243405A (ja) * 1986-04-16 1987-10-23 Seiko Instr & Electronics Ltd 圧電振動子発振回路
JPH0642551B2 (ja) * 1987-11-12 1994-06-01 株式会社東芝 不揮発性半導体メモリ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115185A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Memory type variable capacitive device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53115185A (en) * 1977-03-17 1978-10-07 Sanyo Electric Co Ltd Memory type variable capacitive device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0259794U (US06826419-20041130-M00005.png) * 1988-10-27 1990-05-01

Also Published As

Publication number Publication date
JPS5853864A (ja) 1983-03-30

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