JPS63283173A - 製膜装置 - Google Patents
製膜装置Info
- Publication number
- JPS63283173A JPS63283173A JP62119372A JP11937287A JPS63283173A JP S63283173 A JPS63283173 A JP S63283173A JP 62119372 A JP62119372 A JP 62119372A JP 11937287 A JP11937287 A JP 11937287A JP S63283173 A JPS63283173 A JP S63283173A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- film forming
- wirings
- wire
- forming apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 8
- 238000000059 patterning Methods 0.000 abstract description 10
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 6
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 description 13
- 238000000926 separation method Methods 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000005357 flat glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 229910001000 nickel titanium Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical class [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62119372A JPS63283173A (ja) | 1987-05-15 | 1987-05-15 | 製膜装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62119372A JPS63283173A (ja) | 1987-05-15 | 1987-05-15 | 製膜装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63283173A true JPS63283173A (ja) | 1988-11-21 |
| JPH0533833B2 JPH0533833B2 (enrdf_load_stackoverflow) | 1993-05-20 |
Family
ID=14759875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62119372A Granted JPS63283173A (ja) | 1987-05-15 | 1987-05-15 | 製膜装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63283173A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04116925A (ja) * | 1990-09-07 | 1992-04-17 | Kanegafuchi Chem Ind Co Ltd | パターン化薄膜の形成に用いる基板保持治具 |
| JP2012532457A (ja) * | 2009-06-30 | 2012-12-13 | エルジー イノテック カンパニー リミテッド | 太陽光発電装置及びその製造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5123444B2 (ja) * | 2000-09-08 | 2013-01-23 | 独立行政法人産業技術総合研究所 | 太陽電池の製造方法 |
-
1987
- 1987-05-15 JP JP62119372A patent/JPS63283173A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04116925A (ja) * | 1990-09-07 | 1992-04-17 | Kanegafuchi Chem Ind Co Ltd | パターン化薄膜の形成に用いる基板保持治具 |
| JP2012532457A (ja) * | 2009-06-30 | 2012-12-13 | エルジー イノテック カンパニー リミテッド | 太陽光発電装置及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0533833B2 (enrdf_load_stackoverflow) | 1993-05-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4746628A (en) | Method for making a thin film transistor | |
| US4502204A (en) | Method of manufacturing insulated gate thin film field effect transistors | |
| US6815259B2 (en) | Method of supporting a flexible substrate and method of manufacturing a semiconductor device | |
| JPH11330522A (ja) | 光電池のバッチ製造方法 | |
| JPS6435421A (en) | Thin film transistor array | |
| GB2172745A (en) | Method of manufacturing thin film transistor | |
| JPS63283173A (ja) | 製膜装置 | |
| JPH0766420A (ja) | 薄膜の加工方法 | |
| ES452562A1 (es) | Un aparato para romper un disco semiconductor a lo largo de lineas previamente marcadas. | |
| US5124269A (en) | Method of producing a semiconductor device using a wire mask having a specified diameter | |
| JPH0414821A (ja) | 半導体装置の製造方法 | |
| JPS6437535A (en) | Thin film semiconductor element | |
| JPH0974214A (ja) | パターン形成方法及びそれに用いるマスク | |
| JPS61187369A (ja) | 薄膜トランジスタの製造方法 | |
| JPH0210719A (ja) | 薄膜半導体デバイス用粗結晶構造を有する多結晶層の製法 | |
| JP2000221161A (ja) | 集積センサアレイの製造方法 | |
| JPS60117685A (ja) | 非晶質シリコン太陽電池 | |
| JPH08186115A (ja) | 金属膜の形成方法 | |
| JPS6341083A (ja) | 薄膜半導体素子の製造方法 | |
| JPH03219506A (ja) | 超伝導薄膜の堆積方法 | |
| KR0141845B1 (ko) | 비정질 실리콘 박막형 트랜지스터 | |
| JPS5958873A (ja) | 薄膜２極素子 | |
| JPS6441264A (en) | Contact type image sensor | |
| JPS63169769A (ja) | ｐｉｎ型起光電力素子とその製造方法 | |
| JPS6021807A (ja) | 水素化アモルフアスシリコンのフラツシユアニ−ル方法 |