JPS6328069A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6328069A JPS6328069A JP61172147A JP17214786A JPS6328069A JP S6328069 A JPS6328069 A JP S6328069A JP 61172147 A JP61172147 A JP 61172147A JP 17214786 A JP17214786 A JP 17214786A JP S6328069 A JPS6328069 A JP S6328069A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon nitride
- semiconductor device
- semiconductor
- hydrogen
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 18
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 9
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims abstract description 7
- 230000006866 deterioration Effects 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 3
- 150000002431 hydrogen Chemical class 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 3
- 150000004767 nitrides Chemical class 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 241000254158 Lampyridae Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
- H01L29/458—Ohmic electrodes on silicon for thin film silicon, e.g. source or drain electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置に係り、とりわけ、アモルファス半
導体装置及び多結晶半導体装置等のＳＯ工（ＳｅＬ！ｌ
１ｃｏｎｄｕｃｔｏｒ Ｏｒ工ｎａｕｌａｔｏｒ ）
半導体装置の構造に閃する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to semiconductor devices, and in particular to SO processing (SeL!
1 conductor or engineer)
Inspired by the structure of semiconductor devices.
従来、ＳＯ工構造半導体装置は第２図に示す如き、構造
を取っているのが通例である。すなわち石英あるいはサ
ファイヤあるいはポリイミド等から成る絶縁基板１１０
表面には半導体膜１５が形成され、該半導体膜１３に半
導体装置を構成するために、例えばゲート絶縁膜１４．
ゲート１！極１５が形成されたＭＯ８型半導体装置が形
成され、該半導体装置の保護膜兼絶縁膜として、シリコ
ン窒化膜１６が形成される場合があり、該シリコン窒化
膜１６に穴明けして、アルミニウム電極１７による電極
配線が見こされるのが通例である〔発明が解決しようと
する間頂点〕
しかし、上記従来技術によると、半導体基板がアモルフ
ァス・シリコンあるいはアモルファス・シリコン炭化物
あるいは多結晶シリコン等の如く、水素含有を斐する材
料である場合に、必斐とする水素が第２図にモデル的に
示す如く、絶縁基板１１やコンタクト穴を通してアルミ
ニウム電極１７辱から抜は出て行き、半導体装置の特性
を劣化させるという問題点があった。Conventionally, an SO-structured semiconductor device usually has a structure as shown in FIG. That is, an insulating substrate 110 made of quartz, sapphire, polyimide, etc.
A semiconductor film 15 is formed on the surface, and in order to configure a semiconductor device on the semiconductor film 13, for example, a gate insulating film 14.
Gate 1! An MO8 type semiconductor device having a pole 15 formed thereon is formed, and a silicon nitride film 16 is sometimes formed as a protective film and an insulating film for the semiconductor device, and a hole is formed in the silicon nitride film 16 to form an aluminum electrode. However, according to the above-mentioned prior art, the semiconductor substrate is made of amorphous silicon, amorphous silicon carbide, polycrystalline silicon, etc. When the material contains hydrogen, the necessary hydrogen flows out from the aluminum electrode 17 through the insulating substrate 11 and the contact hole, as shown in the model in Figure 2, and the characteristics of the semiconductor device are affected. There was a problem that it caused deterioration.
本発明はかかる従来技術の問題点をなくシ、水素含有を
要する半導体基板からの水素の抜は出しの無い半導体装
置構造を提供する事を目的とする〔問題点を解決するた
めの手段〕
上記問題点を解決するために、本発明は、半導体装置に
螢で少くとも半導体基板を上下及び側面を含む全面をシ
リコン窒化物で被覆すると共に、電極配線のためのフン
タクト穴部は導電性のあるチタン窒化膜で被覆する手段
をとる。It is an object of the present invention to eliminate the problems of the prior art and provide a semiconductor device structure that does not allow hydrogen to be extracted from a semiconductor substrate that requires hydrogen content. [Means for Solving the Problems] The above-mentioned In order to solve the problems, the present invention coats at least the entire surface of the semiconductor substrate including the top, bottom and side surfaces with silicon nitride using fireflies in a semiconductor device, and also coats the hole for electrode wiring with conductive material. A method of coating with a titanium nitride film is taken.
本発明の如く、半導体装置における半導体基板の全表面
をシリコン窒化物及びチタン窒化物で被覆する事により
、これら窒化物の水素透過率が極めて低いところから、
半導体基、仮からの水素の抜は出しがなくなり、それに
伴う特性劣化がなくなるという作用がある。As in the present invention, by coating the entire surface of a semiconductor substrate in a semiconductor device with silicon nitride and titanium nitride, since the hydrogen permeability of these nitrides is extremely low,
There is an effect that hydrogen is no longer extracted from the semiconductor base or temporary, and the deterioration of characteristics associated with it is eliminated.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す半導体装置の構造を示
す断面図である。すなわち、絶縁基板１０表面にはシリ
コン窒化膜２が形成されるか、あるいは絶縁基板１をシ
リコン窒化物そのものにするかして絶縁基板を咋成し、
その上に、半導体膜３を形成し、該半導体膜３を用いて
例えばＭＯ８型半導体装置を構成する場合に、シリコン
酸化膜あるいはシリコン窒化膜等から成るゲート絶縁膜
４と、ゲー）ＩＥｍｓを形成し、層間絶縁膜兼保護膜と
してシリコン窒化膜６を形成し、該シリコン窒化膜６に
電揄取出しの為のコンタクト穴を形成し、該コンタクト
穴にチタン窒化膜電極７を形成したものである。FIG. 1 is a sectional view showing the structure of a semiconductor device according to an embodiment of the present invention. That is, the insulating substrate is formed by forming the silicon nitride film 2 on the surface of the insulating substrate 10, or by using silicon nitride itself as the insulating substrate 1,
A semiconductor film 3 is formed thereon, and when forming, for example, an MO8 type semiconductor device using the semiconductor film 3, a gate insulating film 4 made of a silicon oxide film, a silicon nitride film, etc. A silicon nitride film 6 is formed as an interlayer insulating film and a protective film, a contact hole is formed in the silicon nitride film 6 for taking out the electric current, and a titanium nitride film electrode 7 is formed in the contact hole. .
本発明の如く少くとも半導体基板を含む全面をシリコン
窒化物及びチタン窒化物で被覆することにより、半導体
基板からの水素の抜は出しがなくなり、水素の抜は出し
による半導体装置の特性劣化がなくなると云う効果があ
る。By coating at least the entire surface including the semiconductor substrate with silicon nitride and titanium nitride as in the present invention, hydrogen is no longer extracted from the semiconductor substrate, and characteristics deterioration of the semiconductor device due to hydrogen extraction is eliminated. There is an effect called.
第１図は本発明の実施例を示す半導体装置の断面図、第
２図は従来技術による半導体装置の断面図である。
１．１１・・・・・・絶縁基板
２．６．１２・・・・・・シリコン窒化膜３．１３・・
・・・・半導体膜
４．１４・・・・・・ゲート絶縁膜
５ 、 １ ５ ・・・ ・・・ ゲ − ト １
１ 極７・・・・・・チタン輩化膜電極
１６・・・アルミニウム電極
第１図
第２図FIG. 1 is a sectional view of a semiconductor device showing an embodiment of the present invention, and FIG. 2 is a sectional view of a semiconductor device according to the prior art. 1.11... Insulating substrate 2.6.12... Silicon nitride film 3.13...
...Semiconductor film 4.14...Gate insulating film 5, 15...Gate 1
1 Pole 7...Titanium-based film electrode 16...Aluminum electrode Fig. 1 Fig. 2
Claims (1)
全面がシリコン窒化物で被覆されていると共に、電極取
り出しのためのコンタクト穴部はチタン窒化膜で被覆さ
れて成る事を特徴とする半導体装置。A semiconductor device characterized in that a semiconductor substrate that requires hydrogen content is coated with silicon nitride over the entire surface including the top, bottom and side surfaces, and a contact hole for taking out an electrode is covered with a titanium nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61172147A JPS6328069A (en) | 1986-07-22 | 1986-07-22 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61172147A JPS6328069A (en) | 1986-07-22 | 1986-07-22 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6328069A true JPS6328069A (en) | 1988-02-05 |
Family
ID=15936434
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61172147A Pending JPS6328069A (en) | 1986-07-22 | 1986-07-22 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6328069A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0395939A (en) * | 1989-09-07 | 1991-04-22 | Canon Inc | Manufacture of semiconductor device |
| EP0514547A1 (en) * | 1990-08-21 | 1992-11-25 | Ramtron International Corporation | SEMICONDUCTOR MEMORY HAVING A FERROELECTRIC CAPACITOR AND A TiON BARRIER FILM |
| US5902131A (en) * | 1997-05-09 | 1999-05-11 | Ramtron International Corporation | Dual-level metalization method for integrated circuit ferroelectric devices |
| WO2009136541A1 (en) * | 2008-05-09 | 2009-11-12 | アークレイ株式会社 | Method for production of insoluble carrier particle, insoluble carrier particle, measurement reagent, sample analysis tool, and immunology turbidimetric method |
-
1986
- 1986-07-22 JP JP61172147A patent/JPS6328069A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0395939A (en) * | 1989-09-07 | 1991-04-22 | Canon Inc | Manufacture of semiconductor device |
| EP0514547A1 (en) * | 1990-08-21 | 1992-11-25 | Ramtron International Corporation | SEMICONDUCTOR MEMORY HAVING A FERROELECTRIC CAPACITOR AND A TiON BARRIER FILM |
| US5523595A (en) * | 1990-08-21 | 1996-06-04 | Ramtron International Corporation | Semiconductor device having a transistor, a ferroelectric capacitor and a hydrogen barrier film |
| US5902131A (en) * | 1997-05-09 | 1999-05-11 | Ramtron International Corporation | Dual-level metalization method for integrated circuit ferroelectric devices |
| WO2009136541A1 (en) * | 2008-05-09 | 2009-11-12 | アークレイ株式会社 | Method for production of insoluble carrier particle, insoluble carrier particle, measurement reagent, sample analysis tool, and immunology turbidimetric method |
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