JPH0395939A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPH0395939A
JPH0395939A JP23394289A JP23394289A JPH0395939A JP H0395939 A JPH0395939 A JP H0395939A JP 23394289 A JP23394289 A JP 23394289A JP 23394289 A JP23394289 A JP 23394289A JP H0395939 A JPH0395939 A JP H0395939A
Authority
JP
Japan
Prior art keywords
film
hydrogen
boundary
temperature
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23394289A
Inventor
Shigeki Kondo
Hidemasa Mizutani
Akiyuki Nishida
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP23394289A priority Critical patent/JPH0395939A/en
Publication of JPH0395939A publication Critical patent/JPH0395939A/en
Application status is Pending legal-status Critical

Links

Abstract

PURPOSE: To reduce the number of boundary levels and to improve electric characteristics of a semiconductor device such as a thin film transistor by forming first and second insulating films to become barriers against diffusion of hydrogen at both upper and lower sides of a thin crystalline semiconductor film, injecting hydrogen into the film, and then heat-treating it.
CONSTITUTION: A silicon nitride film 12 containing hydrogen is first formed as a first insulating film to become a barrier against diffusion of hydrogen on an insulating board 11 made of glass or the like at 200-300°C substrate temperature. Thereafter, a thin polycrystalline silicon film 13 is formed at the same temperature or temperature equal to or lower than the above temperature. Further, a second insulating film 14 to become a barrier against diffusion of hydrogen is formed thereon. Then, it is heat-treated at higher temperature (300-600°C) than that for forming the first film in a N2, Ar, H2 or mixture gas atmosphere. Since the hydrogen is diffused in the polycrystalline silicon film during the heat-treating, it is trapped to the boundary level of a base boundary, defect level in the thin film or boundary level of grain boundary.
COPYRIGHT: (C)1991,JPO&Japio
JP23394289A 1989-09-07 1989-09-07 Manufacture of semiconductor device Pending JPH0395939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23394289A JPH0395939A (en) 1989-09-07 1989-09-07 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23394289A JPH0395939A (en) 1989-09-07 1989-09-07 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPH0395939A true JPH0395939A (en) 1991-04-22

Family

ID=16963034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23394289A Pending JPH0395939A (en) 1989-09-07 1989-09-07 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPH0395939A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0689085A3 (en) * 1994-06-20 1997-01-08 Canon Kk Display device and manufacture method for the same
US6136238A (en) * 1996-03-12 2000-10-24 Bayer Aktiengesellschaft Device and process for producing plastic components, especially polyurethane moldings
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US6972435B2 (en) 1996-06-04 2005-12-06 Semiconductor Energy Laboratory Co., Ltd. Camera having display device utilizing TFT
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7531839B2 (en) 2001-02-28 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device having driver TFTs and pixel TFTs formed on the same substrate
US7547915B2 (en) 1994-06-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having SiOxNy film
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8946717B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6146069A (en) * 1984-08-10 1986-03-06 Sony Corp Manufacture of semiconductor device
JPS61203682A (en) * 1985-03-07 1986-09-09 Nec Corp Semiconductor device and manufacture thereof
JPS63165A (en) * 1986-06-19 1988-01-05 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6328069A (en) * 1986-07-22 1988-02-05 Seiko Epson Corp Semiconductor device
JPS63237570A (en) * 1987-03-26 1988-10-04 Seiko Epson Corp Manufacture of thin film transistor

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6146069A (en) * 1984-08-10 1986-03-06 Sony Corp Manufacture of semiconductor device
JPS61203682A (en) * 1985-03-07 1986-09-09 Nec Corp Semiconductor device and manufacture thereof
JPS63165A (en) * 1986-06-19 1988-01-05 Matsushita Electric Ind Co Ltd Manufacture of semiconductor device
JPS6328069A (en) * 1986-07-22 1988-02-05 Seiko Epson Corp Semiconductor device
JPS63237570A (en) * 1987-03-26 1988-10-04 Seiko Epson Corp Manufacture of thin film transistor

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6849872B1 (en) 1991-08-26 2005-02-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
US7855106B2 (en) 1991-08-26 2010-12-21 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7170138B2 (en) 1993-10-01 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7301209B2 (en) 1993-10-01 2007-11-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7235828B2 (en) 1994-02-23 2007-06-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with residual nickel from crystallization of semiconductor film
US6884698B1 (en) 1994-02-23 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device with crystallization of amorphous silicon
US7749819B2 (en) 1994-02-23 2010-07-06 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8330165B2 (en) 1994-06-09 2012-12-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7547915B2 (en) 1994-06-09 2009-06-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having SiOxNy film
EP0689085A3 (en) * 1994-06-20 1997-01-08 Canon Kk Display device and manufacture method for the same
US6136238A (en) * 1996-03-12 2000-10-24 Bayer Aktiengesellschaft Device and process for producing plastic components, especially polyurethane moldings
US8928081B2 (en) 1996-06-04 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having display device
US7414288B2 (en) 1996-06-04 2008-08-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having display device
US6979841B2 (en) 1996-06-04 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor integrated circuit and fabrication method thereof
US6972435B2 (en) 1996-06-04 2005-12-06 Semiconductor Energy Laboratory Co., Ltd. Camera having display device utilizing TFT
US8405149B2 (en) 1996-06-04 2013-03-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having display device
US8242508B2 (en) 2001-02-28 2012-08-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US7531839B2 (en) 2001-02-28 2009-05-12 Semiconductor Energy Laboratory Co., Ltd. Display device having driver TFTs and pixel TFTs formed on the same substrate
US8017951B2 (en) 2001-02-28 2011-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including a conductive film having a tapered shape
US8835271B2 (en) 2002-04-09 2014-09-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US8946717B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US8946718B2 (en) 2002-04-09 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9105727B2 (en) 2002-04-09 2015-08-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9406806B2 (en) 2002-04-09 2016-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US9666614B2 (en) 2002-04-09 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US10050065B2 (en) 2002-04-09 2018-08-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and display device using the same
US10083995B2 (en) 2002-04-09 2018-09-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor display device
US9366930B2 (en) 2002-05-17 2016-06-14 Semiconductor Energy Laboratory Co., Ltd. Display device with capacitor elements
US10133139B2 (en) 2002-05-17 2018-11-20 Semiconductor Energy Laboratory Co., Ltd. Display device

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