JPS63165A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS63165A JPS63165A JP14325986A JP14325986A JPS63165A JP S63165 A JPS63165 A JP S63165A JP 14325986 A JP14325986 A JP 14325986A JP 14325986 A JP14325986 A JP 14325986A JP S63165 A JPS63165 A JP S63165A
- Authority
- JP
- Japan
- Prior art keywords
- film
- insulating film
- temperature
- containing hydrogen
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010408 film Substances 0.000 claims abstract description 73
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 24
- 239000001257 hydrogen Substances 0.000 claims abstract description 24
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000010438 heat treatment Methods 0.000 claims abstract description 14
- 230000001681 protective effect Effects 0.000 claims abstract description 14
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 9
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 238000005268 plasma chemical vapour deposition Methods 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 238000005036 potential barrier Methods 0.000 abstract description 2
- 238000007493 shaping process Methods 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005984 hydrogenation reaction Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Abstract
Description
【発明の詳細な説明】 産業上の利用分野 本発明は半導体装置の保護膜の製造方法に関する。[Detailed description of the invention] Industrial applications The present invention relates to a method for manufacturing a protective film for a semiconductor device.
従来の技術
多結晶シリコンからなる薄膜トランジスタ（以下ＴＰＴ
と略す）は、チャネル内にダングリングボンド等多くの
欠陥を含むため、移動度が小さく、しきい値電圧が高く
、電流の０Ｎ１０ＦＦ比が小さい。このＴＰＴの特性向
上に水素化がある。その−例としてアイイイイ（ＩＥＥ
Ｅ）、ＥＤＬ−ｓ 。Conventional technologyThin film transistor (hereinafter referred to as TPT) made of polycrystalline silicon
) contains many defects such as dangling bonds in the channel, so the mobility is low, the threshold voltage is high, and the 0N10FF ratio of current is small. Hydrogenation is used to improve the properties of TPT. For example, IEE
E), EDL-s.
４６８（１９８４）に記載されているように、保護膜と
してプラズマＣＶＤ法で窒化シリコン膜を形成した後、
４５０℃前後で１０〜６ｏ分間熱処理して、窒化シリコ
ン中に存在する水素をチャネルの多結晶シリコン中へ拡
散させて欠陥密度を減少させて、ＴＰＴの特性を向上さ
せている。468 (1984), after forming a silicon nitride film as a protective film by plasma CVD method,
Heat treatment is performed at around 450° C. for 10 to 60 minutes to diffuse hydrogen present in silicon nitride into the polycrystalline silicon of the channel, reduce defect density, and improve the characteristics of TPT.
第２図は従来の方法で作成された多結晶シリコン薄膜ト
ランジスタを示すもので、１は絶縁基板、２はシリコン
薄膜、３はゲート酸化膜、４はゲート電極、５は眉間絶
縁膜、６は配線、２７は絶縁保護膜である。Figure 2 shows a polycrystalline silicon thin film transistor fabricated by a conventional method, where 1 is an insulating substrate, 2 is a silicon thin film, 3 is a gate oxide film, 4 is a gate electrode, 5 is an insulating film between the eyebrows, and 6 is a wiring. , 27 are insulating protective films.
発明が解決しようとする問題点
水素化によってＴＰＴの電気特性は大幅に向上するが、
４５０℃前後で熱処理することによって、保護膜２７が
劣下し、耐湿性、耐摩もう性、アルカリイオンのブロッ
キング効果等の半導体装置の最終保護膜としての性能が
低下してしまう０また、熱処理中に不純物が、半導体装
置内に拡散し、半導体装置の性能が劣下し信頼性に問題
が生じる。Problems to be Solved by the Invention Hydrogenation significantly improves the electrical properties of TPT;
Heat treatment at around 450 degrees Celsius deteriorates the protective film 27, reducing its performance as a final protective film for semiconductor devices, such as moisture resistance, abrasion resistance, and alkali ion blocking effect. Impurities then diffuse into the semiconductor device, deteriorating the performance of the semiconductor device and causing reliability problems.
問題点を解決するための手段
本発明は、ＴＰＴ等の半導体装置を水素化するために、
水素を含む絶縁膜を形成し、この絶縁膜を形成した温度
よりも高い温度で熱処理を行い、膜中に存在する水素を
半導体装置内に拡散させる。Means for Solving the Problems The present invention provides a method for hydrogenating semiconductor devices such as TPT.
An insulating film containing hydrogen is formed, and heat treatment is performed at a temperature higher than the temperature at which the insulating film was formed, thereby diffusing hydrogen present in the film into the semiconductor device.
その後、耐湿性・耐摩もう性・アルカリイオンに対する
ブロッキング効果等の優れた絶縁膜を保護膜として形成
する。これらの工程を望ましくは減圧下でしかも真空を
破ることなく行う。Thereafter, an insulating film having excellent moisture resistance, wear resistance, blocking effect against alkali ions, etc. is formed as a protective film. These steps are preferably carried out under reduced pressure and without breaking the vacuum.
作 用
水素を含む第１の絶縁膜を熱処理することによってＴＰ
Ｔ等の半導体装置の電気特性を大幅に向上させることが
でき、しかも、第２の絶縁膜が優れた保護膜として作用
するだめ、ＴＰＴ等の半導体装置の劣下が起らず信頼性
の高い半導体装置の作製が可能である◇また、減圧下で
真空を破ることなく連続で水素を含む絶縁膜の形成、熱
処理。By heat-treating the first insulating film containing functional hydrogen, the TP
The electrical characteristics of semiconductor devices such as TPTs can be greatly improved, and since the second insulating film acts as an excellent protective film, the semiconductor devices such as TPTs do not deteriorate and are highly reliable. It is possible to fabricate semiconductor devices. ◇ Also, it is possible to continuously form and heat-treat an insulating film containing hydrogen without breaking the vacuum under reduced pressure.
最終保護膜の形成を行うため、処理中に不純物等が半導
体層内に拡散せず、しかも、熱処理の前に温度を下げず
に熱処理工程に移るため、熱サイクルが少なく、熱歪の
発生が少なく高信頼性高性能なＴＰＴが作製できる。Since a final protective film is formed, impurities etc. do not diffuse into the semiconductor layer during processing, and since the heat treatment process is started without lowering the temperature before heat treatment, there are fewer thermal cycles and less thermal distortion occurs. A highly reliable and high-performance TPT can be manufactured with a small amount.
実施例
第１図は本発明の一実施例の方法にて形成されり多結晶
シリコノ薄膜トランジスタの断面図を示す。１は絶縁基
板であシ例えばシリコン基板上にシリコン酸化膜あるい
はシリコン窒化膜あるいはこれらの多層膜を形成したも
のや、石英あるいはアルミナセラミックあるいは無アル
カリガラス基板や、その上にシリコン酸化膜あぬいはシ
リコン窒化膜等の薄膜絶縁膜を形成したものである。絶
縁基板１上に減圧ＣＶＤ法あるいはＭＢＥ等で多結晶等
のシリコン薄膜２を形成する。その上にゲート酸化膜３
を形成し、その上にゲート電極４を形成する。ゲート電
極４をマスクとして薄膜２にセルフ７ライメントで不純
物を注入してソース・ドレインを形成する。その後層間
絶縁膜６を形成シタ後、コンタクトウィンドウを形成し
、配線６の形成を行う。その後、水素を含む絶縁膜とし
て例えば、プラズマＣＶＤ法で基板温度が２００〜３６
０℃でシリコン窒化膜７を形成する。このシリコン窒化
膜７中には数チから数十チの水素が含まれている。その
後、シリコン窒化膜を形成した温度よりも高い温度（４
ｏＯ〜６５０℃）で、１０分から２時間熱処理を行う。Embodiment FIG. 1 shows a cross-sectional view of a polycrystalline silicon thin film transistor formed by a method according to an embodiment of the present invention. 1 is an insulating substrate, for example, a silicon oxide film, a silicon nitride film, or a multilayer film of these formed on a silicon substrate, a quartz, alumina ceramic, or alkali-free glass substrate, or a silicon oxide film formed on it. A thin insulating film such as a silicon nitride film is formed. A polycrystalline silicon thin film 2 is formed on an insulating substrate 1 by low pressure CVD, MBE, or the like. On top of that is a gate oxide film 3.
is formed, and a gate electrode 4 is formed thereon. Using the gate electrode 4 as a mask, impurities are implanted into the thin film 2 by self-alignment to form sources and drains. After that, an interlayer insulating film 6 is formed, a contact window is formed, and a wiring 6 is formed. After that, an insulating film containing hydrogen is formed by, for example, plasma CVD at a substrate temperature of 200 to 36°C.
A silicon nitride film 7 is formed at 0°C. This silicon nitride film 7 contains several to several tens of atoms of hydrogen. Thereafter, the temperature is higher than the temperature at which the silicon nitride film was formed (4
Heat treatment is performed at 0°C to 650°C for 10 minutes to 2 hours.
この熱処理中にシリコン窒化膜中に存在する水素が、シ
リコン膜２中に拡散し欠陥をうめポテンシャルバリアが
小さくなシ移動度が大きくなシ、しきい値電圧が小さく
なる。最後に最終保護膜８を形成する。During this heat treatment, hydrogen present in the silicon nitride film diffuses into the silicon film 2 and fills up defects, resulting in a smaller potential barrier, higher mobility, and lower threshold voltage. Finally, a final protective film 8 is formed.
第１図において、熱処理は、水素の拡散が起こり始める
４００℃よりも高く、アルミニウム等の全幅配線等素子
に影響を与えず、多結晶シリコンに拡散した水素が再び
、外へ拡散しない５５０℃よりも低い温度で行う。In Figure 1, the heat treatment is performed at a temperature higher than 400°C, at which hydrogen diffusion begins, without affecting devices such as full-width wiring made of aluminum, and at a temperature higher than 550°C, at which hydrogen diffused into polycrystalline silicon does not diffuse outward again. It is also done at a low temperature.
水素を含む第１の絶縁膜プラズマＣＶＤ法等の減圧下で
作製し、減圧下で真空を破ることなくしかも温度を下げ
ることなく、Ｎ２中あるいはＡｒ中あるいはＮ２中ある
いはこれらの混合ガス中で熱処理を行う。そして最後に
、第２の絶縁膜８を真空を破ることなく減圧下で例えば
プラズマＣＶＤ法で作製する。この第２の絶縁膜８は半
導体装置の保護膜として優れた性能をもつものである。The first insulating film containing hydrogen is produced under reduced pressure using plasma CVD method, etc., and heat treated in N2, Ar, N2, or a mixed gas thereof under reduced pressure without breaking the vacuum or lowering the temperature. I do. Finally, the second insulating film 8 is formed by, for example, plasma CVD under reduced pressure without breaking the vacuum. This second insulating film 8 has excellent performance as a protective film for semiconductor devices.
発明の効果
水素を含む第１の絶縁膜を熱処理することによって多結
晶シリコン薄膜トランジスタの特性は大幅に向上する。Effects of the Invention By heat-treating the first insulating film containing hydrogen, the characteristics of the polycrystalline silicon thin film transistor are significantly improved.
そのあとで、パッシベーションにすぐれた絶縁膜を形成
するため、非常に信頼性の高い良質のＴＰＴが作製でき
る。しかも第１の絶縁膜、熱処理、第２の絶縁膜を真空
を破らずに減圧下で行うと、膜中および界面に不純物の
混入が著しく小さくなり、素子の劣下を著しくおさえる
ことができる。また、これら３つの工程は、基板温度を
室温近くまで下げずに行うことができるため、熱サイク
ルが少ないので熱歪の発生が少なく、高信頼性高品質の
ＴＰＴを作製することができる。After that, an insulating film with excellent passivation is formed, so a highly reliable and high quality TPT can be manufactured. Moreover, if the first insulating film, the heat treatment, and the second insulating film are performed under reduced pressure without breaking the vacuum, the amount of impurities mixed into the film and at the interface is significantly reduced, and deterioration of the device can be significantly suppressed. In addition, these three steps can be performed without lowering the substrate temperature to near room temperature, so there are fewer thermal cycles, so thermal strain is less likely to occur, and a highly reliable and high quality TPT can be manufactured.
このＴＰＴを用いて一次元イメージセンサや液晶デイス
プレーのスイッチング素子、駆動回路を作製することが
できる。This TPT can be used to fabricate one-dimensional image sensors, switching elements for liquid crystal displays, and drive circuits.
第１図は本発明を用いて作製した多結晶シリコン薄膜ト
ランジスタの一実施例の断面図、第２図は従来の薄膜ト
ランジスタの断面図である。
１・・・・・・絶縁基板、２・・・・・・シリコン薄膜
、３，４・・・・・・ゲート酸化膜、５・・・・・・層
間絶縁膜、６・・・・・・金属配線、７・・・・・・水
素を含む第１の絶縁膜、８・・・・・・保護膜。FIG. 1 is a sectional view of an embodiment of a polycrystalline silicon thin film transistor manufactured using the present invention, and FIG. 2 is a sectional view of a conventional thin film transistor. 1... Insulating substrate, 2... Silicon thin film, 3, 4... Gate oxide film, 5... Interlayer insulating film, 6... -Metal wiring, 7...first insulating film containing hydrogen, 8...protective film.
Claims (5)
、水素を含む第１の絶縁膜を形成し、前記水素を含む第
１の絶縁膜を形成した温度よりも高い温度で熱処理を行
い、前記第１の絶縁膜中に存在する水素をシリコン薄膜
中に拡散させて前記薄膜トランジスタを水素化した後、
前記第１の絶縁膜上に半導体装置の保護膜としての第２
の絶縁膜を形成することを特徴とする半導体装置の製造
方法。(1) After forming a silicon thin film transistor on an insulating substrate, a first insulating film containing hydrogen is formed, heat treatment is performed at a temperature higher than the temperature at which the first insulating film containing hydrogen is formed, and the first insulating film is After hydrogenating the thin film transistor by diffusing hydrogen present in the insulating film into the silicon thin film,
A second insulating film as a protective film for a semiconductor device is formed on the first insulating film.
1. A method for manufacturing a semiconductor device, the method comprising: forming an insulating film.
法で、基板温度が２００〜３５０℃で形成した窒化シリ
コン膜を用いることを特徴とする特許請求の範囲第１項
記載の半導体装置の製造方法。(2) Plasma CVD as the first insulating film containing hydrogen
2. The method of manufacturing a semiconductor device according to claim 1, wherein a silicon nitride film formed at a substrate temperature of 200 to 350[deg.] C. is used.
が４００〜５５０℃であることを特徴とする特許請求の
範囲第１項記載の半導体装置の製造方法。(3) The method for manufacturing a semiconductor device according to claim 1, wherein the first insulating film containing hydrogen is heat-treated at a temperature of 400 to 550°C.
真空を破ることなく減圧下で、Ｎ＿２中あるいはＡｒ中
あるいはＨ＿２中あるいはこれらの混合ガス中で、水素
を含む第１の絶縁膜を形成した時の温度より高い温度で
熱処理する事を特徴とする特許請求の範囲第１項記載の
半導体装置の製造方法。(4) After forming the first insulating film containing hydrogen under reduced pressure,
It is characterized by heat treatment under reduced pressure without breaking the vacuum in N_2, Ar, H_2, or a mixed gas thereof at a temperature higher than the temperature at which the first insulating film containing hydrogen was formed. A method for manufacturing a semiconductor device according to claim 1.
絶縁膜形成を、連続でしかも、真空を破ることなく減圧
下で行うことを特徴とする特許請求の範囲第１項記載の
半導体装置の製造方法。(5) The formation of the first insulating film containing hydrogen, the heat treatment, and the formation of the second insulating film are performed continuously and under reduced pressure without breaking the vacuum. A method for manufacturing a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14325986A JPS63165A (en) | 1986-06-19 | 1986-06-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14325986A JPS63165A (en) | 1986-06-19 | 1986-06-19 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63165A true JPS63165A (en) | 1988-01-05 |
Family
ID=15334587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14325986A Pending JPS63165A (en) | 1986-06-19 | 1986-06-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63165A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4883766A (en) * | 1987-11-14 | 1989-11-28 | Ricoh Company, Ltd. | Method of producing thin film transistor |
| US4886764A (en) * | 1988-02-11 | 1989-12-12 | Sgs-Thomson Microelectronics, Inc. | Process for making refractory metal silicide cap for protecting multi-layer polycide structure |
| JPH0395939A (en) * | 1989-09-07 | 1991-04-22 | Canon Inc | Manufacture of semiconductor device |
| JPH05136167A (en) * | 1991-09-20 | 1993-06-01 | Mitsubishi Electric Corp | Thin film transistor and its manufacture |
-
1986
- 1986-06-19 JP JP14325986A patent/JPS63165A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4883766A (en) * | 1987-11-14 | 1989-11-28 | Ricoh Company, Ltd. | Method of producing thin film transistor |
| US4886764A (en) * | 1988-02-11 | 1989-12-12 | Sgs-Thomson Microelectronics, Inc. | Process for making refractory metal silicide cap for protecting multi-layer polycide structure |
| JPH0395939A (en) * | 1989-09-07 | 1991-04-22 | Canon Inc | Manufacture of semiconductor device |
| JPH05136167A (en) * | 1991-09-20 | 1993-06-01 | Mitsubishi Electric Corp | Thin film transistor and its manufacture |
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