JPS6327859B2 - - Google Patents
Info
- Publication number
- JPS6327859B2 JPS6327859B2 JP57095917A JP9591782A JPS6327859B2 JP S6327859 B2 JPS6327859 B2 JP S6327859B2 JP 57095917 A JP57095917 A JP 57095917A JP 9591782 A JP9591782 A JP 9591782A JP S6327859 B2 JPS6327859 B2 JP S6327859B2
- Authority
- JP
- Japan
- Prior art keywords
- metal layer
- input
- output
- conductive
- pair
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 19
- 239000004065 semiconductor Substances 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/66—High-frequency adaptations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/58—Structural electrical arrangements for semiconductor devices not otherwise provided for
- H01L2223/64—Impedance arrangements
- H01L2223/66—High-frequency adaptations
- H01L2223/6644—Packaging aspects of high-frequency amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57095917A JPS58213456A (ja) | 1982-06-04 | 1982-06-04 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57095917A JPS58213456A (ja) | 1982-06-04 | 1982-06-04 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58213456A JPS58213456A (ja) | 1983-12-12 |
JPS6327859B2 true JPS6327859B2 (pt) | 1988-06-06 |
Family
ID=14150624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57095917A Granted JPS58213456A (ja) | 1982-06-04 | 1982-06-04 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58213456A (pt) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02184054A (ja) * | 1989-01-11 | 1990-07-18 | Toshiba Corp | ハイブリッド型樹脂封止半導体装置 |
DE69306919T2 (de) * | 1992-11-18 | 1997-05-15 | Fuji Electric Co Ltd | Halbleiter-Umwandlungsvorrichtung |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS56104146U (pt) * | 1980-01-08 | 1981-08-14 |
-
1982
- 1982-06-04 JP JP57095917A patent/JPS58213456A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58213456A (ja) | 1983-12-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5371405A (en) | High-frequency high-power transistor | |
US3683241A (en) | Radio frequency transistor package | |
US3784883A (en) | Transistor package | |
US4276558A (en) | Hermetically sealed active microwave integrated circuit | |
US4107728A (en) | Package for push-pull semiconductor devices | |
US4042952A (en) | R. F. power transistor device with controlled common lead inductance | |
US4193083A (en) | Package for push-pull semiconductor devices | |
US4393392A (en) | Hybrid transistor | |
EP0015709B1 (en) | Constructional arrangement for semiconductor devices | |
EP1250717A2 (en) | Ldmos power package with a plurality of ground signal paths | |
JP3674780B2 (ja) | 高周波半導体装置 | |
EP0117434A1 (en) | Hybrid microwave subsystem | |
JPS5931042A (ja) | 高周波高出力半導体装置 | |
US5399906A (en) | High-frequency hybrid semiconductor integrated circuit structure including multiple coupling substrate and thermal dissipator | |
JPH11330298A (ja) | 信号端子付パッケージおよびそれを用いた電子装置 | |
US6094114A (en) | Slotline-to-slotline mounted flip chip | |
JPS6327859B2 (pt) | ||
US5258646A (en) | Package for microwave IC | |
JP2880023B2 (ja) | 高周波トランジスタ回路 | |
JP2534841B2 (ja) | マイクロ波集積回路用外囲器 | |
JP3913937B2 (ja) | 半導体装置 | |
JPS5861652A (ja) | 半導体装置 | |
JP3096046B2 (ja) | マイクロ波半導体装置 | |
JPS605055B2 (ja) | 半導体装置 | |
JPS5929377Y2 (ja) | 高周波高出力トランジスタ装置 |