JPS6327848B2 - - Google Patents
Info
- Publication number
- JPS6327848B2 JPS6327848B2 JP16402578A JP16402578A JPS6327848B2 JP S6327848 B2 JPS6327848 B2 JP S6327848B2 JP 16402578 A JP16402578 A JP 16402578A JP 16402578 A JP16402578 A JP 16402578A JP S6327848 B2 JPS6327848 B2 JP S6327848B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon dioxide
- dioxide layer
- gas
- material layer
- polymer material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 235000012239 silicon dioxide Nutrition 0.000 claims description 19
- 239000000377 silicon dioxide Substances 0.000 claims description 19
- 238000010894 electron beam technology Methods 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 8
- 239000002861 polymer material Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000007789 gas Substances 0.000 description 18
- 229920002120 photoresistant polymer Polymers 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- 238000005530 etching Methods 0.000 description 11
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 10
- 229920001195 polyisoprene Polymers 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000009832 plasma treatment Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 229920001971 elastomer Polymers 0.000 description 2
- 229920003986 novolac Polymers 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 1
- 229940114081 cinnamate Drugs 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012487 rinsing solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- WBYWAXJHAXSJNI-VOTSOKGWSA-M trans-cinnamate Chemical compound [O-]C(=O)\C=C\C1=CC=CC=C1 WBYWAXJHAXSJNI-VOTSOKGWSA-M 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16402578A JPS5587436A (en) | 1978-12-25 | 1978-12-25 | Method of producing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16402578A JPS5587436A (en) | 1978-12-25 | 1978-12-25 | Method of producing semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5587436A JPS5587436A (en) | 1980-07-02 |
| JPS6327848B2 true JPS6327848B2 (zh) | 1988-06-06 |
Family
ID=15785356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16402578A Granted JPS5587436A (en) | 1978-12-25 | 1978-12-25 | Method of producing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5587436A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0236329A (ja) * | 1988-07-27 | 1990-02-06 | Showa Electric Wire & Cable Co Ltd | ケーブルのプーリングアイ防水試験方法 |
| JPH0669796U (ja) * | 1993-03-10 | 1994-09-30 | 東京部品工業株式会社 | 外部観察形洩れ検出器 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2024095769A1 (ja) * | 2022-11-02 | 2024-05-10 | Ａｇｃ株式会社 | 凹部構造を有する部材を製造する方法および凹部構造を有する部材 |
-
1978
- 1978-12-25 JP JP16402578A patent/JPS5587436A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0236329A (ja) * | 1988-07-27 | 1990-02-06 | Showa Electric Wire & Cable Co Ltd | ケーブルのプーリングアイ防水試験方法 |
| JPH0669796U (ja) * | 1993-03-10 | 1994-09-30 | 東京部品工業株式会社 | 外部観察形洩れ検出器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5587436A (en) | 1980-07-02 |
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