JPS6327848B2 - - Google Patents

Info

Publication number
JPS6327848B2
JPS6327848B2 JP16402578A JP16402578A JPS6327848B2 JP S6327848 B2 JPS6327848 B2 JP S6327848B2 JP 16402578 A JP16402578 A JP 16402578A JP 16402578 A JP16402578 A JP 16402578A JP S6327848 B2 JPS6327848 B2 JP S6327848B2
Authority
JP
Japan
Prior art keywords
silicon dioxide
dioxide layer
gas
material layer
polymer material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP16402578A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5587436A (en
Inventor
Moritaka Nakamura
Kazuo Toda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16402578A priority Critical patent/JPS5587436A/ja
Publication of JPS5587436A publication Critical patent/JPS5587436A/ja
Publication of JPS6327848B2 publication Critical patent/JPS6327848B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)
JP16402578A 1978-12-25 1978-12-25 Method of producing semiconductor device Granted JPS5587436A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16402578A JPS5587436A (en) 1978-12-25 1978-12-25 Method of producing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16402578A JPS5587436A (en) 1978-12-25 1978-12-25 Method of producing semiconductor device

Publications (2)

Publication Number Publication Date
JPS5587436A JPS5587436A (en) 1980-07-02
JPS6327848B2 true JPS6327848B2 (enrdf_load_stackoverflow) 1988-06-06

Family

ID=15785356

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16402578A Granted JPS5587436A (en) 1978-12-25 1978-12-25 Method of producing semiconductor device

Country Status (1)

Country Link
JP (1) JPS5587436A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0236329A (ja) * 1988-07-27 1990-02-06 Showa Electric Wire & Cable Co Ltd ケーブルのプーリングアイ防水試験方法
JPH0669796U (ja) * 1993-03-10 1994-09-30 東京部品工業株式会社 外部観察形洩れ検出器

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20250107194A (ko) * 2022-11-02 2025-07-11 에이지씨 가부시키가이샤 오목부 구조를 갖는 부재를 제조하는 방법 및 오목부 구조를 갖는 부재
WO2024247461A1 (ja) * 2023-05-31 2024-12-05 Ａｇｃ株式会社 凹部構造を有する部材を製造する方法および凹部構造を有する部材

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0236329A (ja) * 1988-07-27 1990-02-06 Showa Electric Wire & Cable Co Ltd ケーブルのプーリングアイ防水試験方法
JPH0669796U (ja) * 1993-03-10 1994-09-30 東京部品工業株式会社 外部観察形洩れ検出器

Also Published As

Publication number Publication date
JPS5587436A (en) 1980-07-02

Similar Documents

Publication Publication Date Title
US3508982A (en) Method of making an ultra-violet selective template
KR100298609B1 (ko) 위상쉬프트층을갖는포토마스크의제조방법
US6610616B2 (en) Method for forming micro-pattern of semiconductor device
US4321317A (en) High resolution lithography system for microelectronic fabrication
JPS6327848B2 (enrdf_load_stackoverflow)
US7064075B2 (en) Method for manufacturing semiconductor electronics devices
JPH06267838A (ja) レジストパターンの形成方法
JPS59141228A (ja) 微細パタ−ン形成方法
JPH03119720A (ja) リフトオフ加工用ホトレジスト、リフトオフ加工用ホトレジストのパターン形成方法及びリフトオフ方法
JP3034096B2 (ja) 位相シフトフォトマスクの修正方法
EP0077057B2 (en) Negative-type resist sensitive to ionizing radiation
JP2616820B2 (ja) レジストパターンの形成方法
JPS61260242A (ja) レジストパタ−ンの形成方法
JPH0313949A (ja) レジストパターンの形成方法
JPH0128374B2 (enrdf_load_stackoverflow)
JPS6048023B2 (ja) ポジ型レジスト
JPS6152567B2 (enrdf_load_stackoverflow)
JPS60110124A (ja) 微細パタ−ン加工方法
JP2000347406A (ja) レジストパターン形成方法及び半導体装置の製造方法
JPS628513B2 (enrdf_load_stackoverflow)
JPS6411938B2 (enrdf_load_stackoverflow)
JPH0684774A (ja) 半導体装置及びその製造方法
JPS646448B2 (enrdf_load_stackoverflow)
JPS5891632A (ja) 微細パタ−ン形成方法
JPH036566A (ja) エキシマレーザによるパターン形成方法