JPS6327691B2 - - Google Patents

Info

Publication number

JPS6327691B2

JPS6327691B2 JP53131951A JP13195178A JPS6327691B2 JP S6327691 B2 JPS6327691 B2 JP S6327691B2 JP 53131951 A JP53131951 A JP 53131951A JP 13195178 A JP13195178 A JP 13195178A JP S6327691 B2 JPS6327691 B2 JP S6327691B2

Authority

JP

Japan

Prior art keywords

film

resist

etching

insulating film

transparent conductive

Prior art date

1978-10-25

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 238000000034 method Methods 0.000 claims description 27
• 238000005530 etching Methods 0.000 claims description 14
• 239000000758 substrate Substances 0.000 claims description 9
• 238000004519 manufacturing process Methods 0.000 claims description 8
• 238000004380 ashing Methods 0.000 claims description 5
• 239000011248 coating agent Substances 0.000 claims description 2
• 238000000576 coating method Methods 0.000 claims description 2
• 239000010408 film Substances 0.000 description 56
• 239000010410 layer Substances 0.000 description 11
• 238000006243 chemical reaction Methods 0.000 description 6
• 229910003437 indium oxide Inorganic materials 0.000 description 6
• PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 6
• 239000010409 thin film Substances 0.000 description 6
• 239000011521 glass Substances 0.000 description 5
• 230000007547 defect Effects 0.000 description 4
• ZNOKGRXACCSDPY-UHFFFAOYSA-N tungsten trioxide Chemical compound O=[W](=O)=O ZNOKGRXACCSDPY-UHFFFAOYSA-N 0.000 description 4
• 229910004298 SiO 2 Inorganic materials 0.000 description 3
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
• 238000001312 dry etching Methods 0.000 description 3
• 238000001704 evaporation Methods 0.000 description 3
• 229910052760 oxygen Inorganic materials 0.000 description 3
• 239000001301 oxygen Substances 0.000 description 3
• 238000004544 sputter deposition Methods 0.000 description 3
• XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
• 229910001887 tin oxide Inorganic materials 0.000 description 3
• 238000007740 vapor deposition Methods 0.000 description 3
• CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
• 229910052581 Si3N4 Inorganic materials 0.000 description 2
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
• 229910006404 SnO 2 Inorganic materials 0.000 description 2
• 238000010586 diagram Methods 0.000 description 2
• 230000001681 protective effect Effects 0.000 description 2
• 229910052814 silicon oxide Inorganic materials 0.000 description 2
• 238000000992 sputter etching Methods 0.000 description 2
• XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
• 238000001039 wet etching Methods 0.000 description 2
• 239000013032 Hydrocarbon resin Substances 0.000 description 1
• 238000010521 absorption reaction Methods 0.000 description 1
• 229910002092 carbon dioxide Inorganic materials 0.000 description 1
• 239000001569 carbon dioxide Substances 0.000 description 1
• 229910000420 cerium oxide Inorganic materials 0.000 description 1
• 229910000421 cerium(III) oxide Inorganic materials 0.000 description 1
• 238000003486 chemical etching Methods 0.000 description 1
• 238000000151 deposition Methods 0.000 description 1
• 230000008021 deposition Effects 0.000 description 1
• 238000002845 discoloration Methods 0.000 description 1
• 230000000694 effects Effects 0.000 description 1
• 238000003487 electrochemical reaction Methods 0.000 description 1
• 238000005562 fading Methods 0.000 description 1
• 229920006270 hydrocarbon resin Polymers 0.000 description 1
• ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
• 239000000463 material Substances 0.000 description 1
• 238000005259 measurement Methods 0.000 description 1
• VUZPPFZMUPKLLV-UHFFFAOYSA-N methane;hydrate Chemical compound C.O VUZPPFZMUPKLLV-UHFFFAOYSA-N 0.000 description 1
• BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
• 238000001259 photo etching Methods 0.000 description 1
• 229920002120 photoresistant polymer Polymers 0.000 description 1
• 238000001020 plasma etching Methods 0.000 description 1
• 239000011241 protective layer Substances 0.000 description 1
• 238000006722 reduction reaction Methods 0.000 description 1
• 229920005989 resin Polymers 0.000 description 1
• 239000011347 resin Substances 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 238000002834 transmittance Methods 0.000 description 1