JPS63275175A - パワ−トランジスタ - Google Patents
パワ−トランジスタInfo
- Publication number
- JPS63275175A JPS63275175A JP62111305A JP11130587A JPS63275175A JP S63275175 A JPS63275175 A JP S63275175A JP 62111305 A JP62111305 A JP 62111305A JP 11130587 A JP11130587 A JP 11130587A JP S63275175 A JPS63275175 A JP S63275175A
- Authority
- JP
- Japan
- Prior art keywords
- base
- emitter
- electrode
- wiring
- power transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62111305A JPS63275175A (ja) | 1987-05-07 | 1987-05-07 | パワ−トランジスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62111305A JPS63275175A (ja) | 1987-05-07 | 1987-05-07 | パワ−トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63275175A true JPS63275175A (ja) | 1988-11-11 |
| JPH0577332B2 JPH0577332B2 (enExample) | 1993-10-26 |
Family
ID=14557854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62111305A Granted JPS63275175A (ja) | 1987-05-07 | 1987-05-07 | パワ−トランジスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63275175A (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5073811A (en) * | 1989-06-22 | 1991-12-17 | Sgs-Thomson Microelectronics S.R.L. | Integratable power transistor with optimization of direct secondary breakdown phenomena |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5887867A (ja) * | 1981-11-20 | 1983-05-25 | Fuji Electric Co Ltd | トランジスタ |
| JPS59155959A (ja) * | 1983-02-25 | 1984-09-05 | Toshiba Corp | 電力用トランジスタ |
| JPS60783A (ja) * | 1983-06-17 | 1985-01-05 | Nec Corp | 太陽電池素子の製造方法 |
-
1987
- 1987-05-07 JP JP62111305A patent/JPS63275175A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5887867A (ja) * | 1981-11-20 | 1983-05-25 | Fuji Electric Co Ltd | トランジスタ |
| JPS59155959A (ja) * | 1983-02-25 | 1984-09-05 | Toshiba Corp | 電力用トランジスタ |
| JPS60783A (ja) * | 1983-06-17 | 1985-01-05 | Nec Corp | 太陽電池素子の製造方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5073811A (en) * | 1989-06-22 | 1991-12-17 | Sgs-Thomson Microelectronics S.R.L. | Integratable power transistor with optimization of direct secondary breakdown phenomena |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0577332B2 (enExample) | 1993-10-26 |
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