JPS6327426B2 - - Google Patents
Info
- Publication number
- JPS6327426B2 JPS6327426B2 JP60193419A JP19341985A JPS6327426B2 JP S6327426 B2 JPS6327426 B2 JP S6327426B2 JP 60193419 A JP60193419 A JP 60193419A JP 19341985 A JP19341985 A JP 19341985A JP S6327426 B2 JPS6327426 B2 JP S6327426B2
- Authority
- JP
- Japan
- Prior art keywords
- cooling gas
- bell gear
- inner bell
- nozzle
- gear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000112 cooling gas Substances 0.000 claims description 42
- 238000001947 vapour-phase growth Methods 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 230000001154 acute effect Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000005049 silicon tetrachloride Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19341985A JPS6254081A (ja) | 1985-09-02 | 1985-09-02 | 気相成長装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19341985A JPS6254081A (ja) | 1985-09-02 | 1985-09-02 | 気相成長装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6254081A JPS6254081A (ja) | 1987-03-09 |
| JPS6327426B2 true JPS6327426B2 (ru) | 1988-06-02 |
Family
ID=16307650
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19341985A Granted JPS6254081A (ja) | 1985-09-02 | 1985-09-02 | 気相成長装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6254081A (ru) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63270468A (ja) * | 1987-04-27 | 1988-11-08 | Hitachi Electronics Eng Co Ltd | Ｃｖｄ薄膜形成装置 |
| JPH0387372A (ja) * | 1988-07-22 | 1991-04-12 | Canon Inc | 堆積膜形成方法 |
| US20070187386A1 (en) * | 2006-02-10 | 2007-08-16 | Poongsan Microtec Corporation | Methods and apparatuses for high pressure gas annealing |
| JP5409413B2 (ja) * | 2010-01-26 | 2014-02-05 | 日本パイオニクス株式会社 | Ｉｉｉ族窒化物半導体の気相成長装置 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6067364U (ja) * | 1983-10-13 | 1985-05-13 | 富士通株式会社 | 反応管洗浄用アダプタ |
-
1985
- 1985-09-02 JP JP19341985A patent/JPS6254081A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6254081A (ja) | 1987-03-09 |
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