JPS63265466A - ゲートターンオフサイリスタ - Google Patents
ゲートターンオフサイリスタInfo
- Publication number
- JPS63265466A JPS63265466A JP63056101A JP5610188A JPS63265466A JP S63265466 A JPS63265466 A JP S63265466A JP 63056101 A JP63056101 A JP 63056101A JP 5610188 A JP5610188 A JP 5610188A JP S63265466 A JPS63265466 A JP S63265466A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- layers
- regions
- main surface
- emitter layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
- H10D62/142—Anode regions of thyristors or collector regions of gated bipolar-mode devices
Landscapes
- Thyristors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63056101A JPS63265466A (ja) | 1988-03-11 | 1988-03-11 | ゲートターンオフサイリスタ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63056101A JPS63265466A (ja) | 1988-03-11 | 1988-03-11 | ゲートターンオフサイリスタ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1848478A Division JPS54111790A (en) | 1978-02-22 | 1978-02-22 | Semiconductor switchgear |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22967292A Division JPH06120484A (ja) | 1992-08-28 | 1992-08-28 | ゲートターンオフサイリスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63265466A true JPS63265466A (ja) | 1988-11-01 |
| JPH0358548B2 JPH0358548B2 (cg-RX-API-DMAC7.html) | 1991-09-05 |
Family
ID=13017711
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63056101A Granted JPS63265466A (ja) | 1988-03-11 | 1988-03-11 | ゲートターンオフサイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63265466A (cg-RX-API-DMAC7.html) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5081290A (cg-RX-API-DMAC7.html) * | 1973-11-16 | 1975-07-01 | ||
| JPS50127582A (cg-RX-API-DMAC7.html) * | 1974-03-27 | 1975-10-07 | ||
| JPS50147679A (cg-RX-API-DMAC7.html) * | 1974-05-17 | 1975-11-26 | ||
| JPS50148086A (cg-RX-API-DMAC7.html) * | 1974-05-20 | 1975-11-27 | ||
| JPS51138389A (en) * | 1975-05-27 | 1976-11-29 | Toyo Electric Mfg Co Ltd | Thyristor |
| JPS5261971A (en) * | 1975-11-18 | 1977-05-21 | Toshiba Corp | Control of turn-off time of silicon controlled rectifying element |
| JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
-
1988
- 1988-03-11 JP JP63056101A patent/JPS63265466A/ja active Granted
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5081290A (cg-RX-API-DMAC7.html) * | 1973-11-16 | 1975-07-01 | ||
| JPS50127582A (cg-RX-API-DMAC7.html) * | 1974-03-27 | 1975-10-07 | ||
| JPS50147679A (cg-RX-API-DMAC7.html) * | 1974-05-17 | 1975-11-26 | ||
| JPS50148086A (cg-RX-API-DMAC7.html) * | 1974-05-20 | 1975-11-27 | ||
| JPS51138389A (en) * | 1975-05-27 | 1976-11-29 | Toyo Electric Mfg Co Ltd | Thyristor |
| JPS5261971A (en) * | 1975-11-18 | 1977-05-21 | Toshiba Corp | Control of turn-off time of silicon controlled rectifying element |
| JPS54111790A (en) * | 1978-02-22 | 1979-09-01 | Hitachi Ltd | Semiconductor switchgear |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0358548B2 (cg-RX-API-DMAC7.html) | 1991-09-05 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4646117A (en) | Power semiconductor devices with increased turn-off current ratings and limited current density in peripheral portions | |
| JPS6043032B2 (ja) | ゲートターンオフサイリスタ | |
| US3896476A (en) | Semiconductor switching device | |
| JPS6362905B2 (cg-RX-API-DMAC7.html) | ||
| JPH0138381B2 (cg-RX-API-DMAC7.html) | ||
| US4868625A (en) | Gate turn-off thyristor of multi-emitter type | |
| US6218683B1 (en) | Diode | |
| JPH0465552B2 (cg-RX-API-DMAC7.html) | ||
| JPS63265466A (ja) | ゲートターンオフサイリスタ | |
| JPS6364907B2 (cg-RX-API-DMAC7.html) | ||
| US4825270A (en) | Gate turn-off thyristor | |
| JPS60187058A (ja) | 半導体装置 | |
| JPH06120484A (ja) | ゲートターンオフサイリスタ | |
| JPH08274306A (ja) | 絶縁ゲート型サイリスタ | |
| JPS5937866B2 (ja) | 半導体装置 | |
| JPH0682832B2 (ja) | 半導体スイツチング装置 | |
| JPH0691246B2 (ja) | 半導体装置 | |
| JPS5938056Y2 (ja) | 半導体開閉装置 | |
| US3784886A (en) | Bidirectional switching semiconductor device | |
| JPH05226643A (ja) | ターンオフ可能なパワー半導体素子 | |
| JPS59163867A (ja) | ゲ−トタ−ンオフサイリスタ | |
| JPH0548083A (ja) | 電力用半導体素子 | |
| JPH04320377A (ja) | 絶縁ゲート型バイポーラトランジスタ | |
| JPH0758777B2 (ja) | ゲートターンオフサイリスタ | |
| JPS62290179A (ja) | ゲ−トタ−ンオフサイリスタ |