JPS63265448A - Mos型半導体装置の製造方法 - Google Patents
Mos型半導体装置の製造方法Info
- Publication number
- JPS63265448A JPS63265448A JP29736287A JP29736287A JPS63265448A JP S63265448 A JPS63265448 A JP S63265448A JP 29736287 A JP29736287 A JP 29736287A JP 29736287 A JP29736287 A JP 29736287A JP S63265448 A JPS63265448 A JP S63265448A
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- doped
- phosphorus
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29736287A JPS63265448A (ja) | 1987-11-27 | 1987-11-27 | Mos型半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP29736287A JPS63265448A (ja) | 1987-11-27 | 1987-11-27 | Mos型半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15684577A Division JPS5488783A (en) | 1977-12-26 | 1977-12-26 | Semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63265448A true JPS63265448A (ja) | 1988-11-01 |
| JPH028463B2 JPH028463B2 (cs) | 1990-02-23 |
Family
ID=17845516
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP29736287A Granted JPS63265448A (ja) | 1987-11-27 | 1987-11-27 | Mos型半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63265448A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6114241A (en) * | 1998-06-29 | 2000-09-05 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device capable of reducing contact resistance |
| US6277738B1 (en) | 1999-06-23 | 2001-08-21 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device capable of reducing contact resistance |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112773A (cs) * | 1974-06-13 | 1976-01-31 | Rca Corp | |
| JPS5131189A (ja) * | 1974-09-11 | 1976-03-17 | Sony Corp | Handotaisochi |
| JPS5132957A (en) * | 1974-09-13 | 1976-03-19 | Matsushita Electric Industrial Co Ltd | Insatsuhaisenban |
-
1987
- 1987-11-27 JP JP29736287A patent/JPS63265448A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5112773A (cs) * | 1974-06-13 | 1976-01-31 | Rca Corp | |
| JPS5131189A (ja) * | 1974-09-11 | 1976-03-17 | Sony Corp | Handotaisochi |
| JPS5132957A (en) * | 1974-09-13 | 1976-03-19 | Matsushita Electric Industrial Co Ltd | Insatsuhaisenban |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6114241A (en) * | 1998-06-29 | 2000-09-05 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device capable of reducing contact resistance |
| US6277738B1 (en) | 1999-06-23 | 2001-08-21 | Hyundai Electronics Industries Co., Ltd. | Method of manufacturing a semiconductor device capable of reducing contact resistance |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH028463B2 (cs) | 1990-02-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6072272A (ja) | 半導体装置の製造方法 | |
| JPS6213819B2 (cs) | ||
| JP3626773B2 (ja) | 半導体デバイスの導電層、mosfet及びそれらの製造方法 | |
| JPS61166075A (ja) | 半導体装置およびその製造方法 | |
| JPH0257707B2 (cs) | ||
| JPS63265448A (ja) | Mos型半導体装置の製造方法 | |
| JPH0550129B2 (cs) | ||
| JPH0322694B2 (cs) | ||
| JP3616122B2 (ja) | 半導体装置の製造方法 | |
| JPH0147012B2 (cs) | ||
| JP2886174B2 (ja) | 半導体装置の製造方法 | |
| JPS59208773A (ja) | 半導体装置の製造方法 | |
| JP3095452B2 (ja) | 半導体素子の製造方法 | |
| JPS58202553A (ja) | 半導体装置 | |
| JPH0222544B2 (cs) | ||
| JPS62115776A (ja) | 半導体装置の製造方法 | |
| JPH06104428A (ja) | 半導体装置及びその製造方法 | |
| JPH03297172A (ja) | 薄膜トランジスタ及びその製造方法 | |
| JPH0437167A (ja) | 半導体装置 | |
| JP2822382B2 (ja) | 半導体装置及びその製造方法 | |
| JPS63240017A (ja) | 半導体装置の製造方法 | |
| JPS63301556A (ja) | Bi−CMOS半導体装置 | |
| JPS5935475A (ja) | 半導体装置の製造方法 | |
| JPH0434820B2 (cs) | ||
| JPS61251164A (ja) | Bi−MIS集積回路の製造方法 |