JPS632653B2 - - Google Patents
Info
- Publication number
- JPS632653B2 JPS632653B2 JP55000153A JP15380A JPS632653B2 JP S632653 B2 JPS632653 B2 JP S632653B2 JP 55000153 A JP55000153 A JP 55000153A JP 15380 A JP15380 A JP 15380A JP S632653 B2 JPS632653 B2 JP S632653B2
- Authority
- JP
- Japan
- Prior art keywords
- slit
- ion
- ion beam
- section
- ion implantation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 150000002500 ions Chemical class 0.000 claims description 36
- 238000005468 ion implantation Methods 0.000 claims description 32
- 238000006073 displacement reaction Methods 0.000 claims description 4
- 238000010884 ion-beam technique Methods 0.000 description 62
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 17
- 239000010703 silicon Substances 0.000 description 17
- 239000011734 sodium Substances 0.000 description 17
- 229910052708 sodium Inorganic materials 0.000 description 17
- 230000007935 neutral effect Effects 0.000 description 16
- 239000002245 particle Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 16
- 239000000356 contaminant Substances 0.000 description 15
- 238000011109 contamination Methods 0.000 description 14
- 238000002513 implantation Methods 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000000605 extraction Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- 230000001133 acceleration Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000003921 oil Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 230000003749 cleanliness Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- -1 sodium Chemical class 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
Landscapes
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15380A JPS56111040A (en) | 1980-01-07 | 1980-01-07 | Ion implanting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15380A JPS56111040A (en) | 1980-01-07 | 1980-01-07 | Ion implanting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56111040A JPS56111040A (en) | 1981-09-02 |
| JPS632653B2 true JPS632653B2 (ko) | 1988-01-20 |
Family
ID=11466090
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15380A Granted JPS56111040A (en) | 1980-01-07 | 1980-01-07 | Ion implanting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56111040A (ko) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2759151B2 (ja) * | 1988-09-19 | 1998-05-28 | 東京エレクトロン株式会社 | イオン注入装置及びイオン注入方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4968660A (ko) * | 1972-11-04 | 1974-07-03 | ||
| JPS543475A (en) * | 1977-06-10 | 1979-01-11 | Hitachi Ltd | Ion injecting device |
| JPS5466344A (en) * | 1977-11-01 | 1979-05-28 | Ibm | Apparatus for keeping ion bombarding apparatus under evacuated condition |
-
1980
- 1980-01-07 JP JP15380A patent/JPS56111040A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4968660A (ko) * | 1972-11-04 | 1974-07-03 | ||
| JPS543475A (en) * | 1977-06-10 | 1979-01-11 | Hitachi Ltd | Ion injecting device |
| JPS5466344A (en) * | 1977-11-01 | 1979-05-28 | Ibm | Apparatus for keeping ion bombarding apparatus under evacuated condition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56111040A (en) | 1981-09-02 |
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