JPS63263702A - Manufacture of platinum thin film temperature sensor - Google Patents
Manufacture of platinum thin film temperature sensorInfo
- Publication number
- JPS63263702A JPS63263702A JP9896987A JP9896987A JPS63263702A JP S63263702 A JPS63263702 A JP S63263702A JP 9896987 A JP9896987 A JP 9896987A JP 9896987 A JP9896987 A JP 9896987A JP S63263702 A JPS63263702 A JP S63263702A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- platinum thin
- temperature sensor
- temperature
- manufacture
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims description 53
- 229910052697 platinum Inorganic materials 0.000 title claims description 28
- 239000010409 thin film Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000010408 film Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000003057 platinum Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、白金薄膜温度センサの製造方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a platinum thin film temperature sensor.
従来の技術
従来から高精度、高信頼性の温度センサとして白金温度
センサが使用されており、さらには白金薄膜温度センサ
も開発されている。この白金薄膜温度センサは白金薄膜
を使用しているものであるために、薄膜製造技術で容易
に製造でき、高精度、高信頼性を有し、かつ小型で安価
であるという特長をもっている。2. Description of the Related Art Platinum temperature sensors have been used as highly accurate and reliable temperature sensors, and platinum thin film temperature sensors have also been developed. Since this platinum thin film temperature sensor uses a platinum thin film, it can be easily manufactured using thin film manufacturing technology, has high precision, high reliability, and has the features of being small and inexpensive.
この白金薄膜温度センサは、次のようにして作製される
。すなわち、第２図に示すように、セラミック基板１１
に白金薄膜をスパッタ蒸着し、さらにたとえばレーザト
リミング法または湿式エツチング法などによりジグザグ
状のパターンの測温抵抗体１２とする。この測温抵抗体
１２の両端部には電極端子部１３．１４が形成されてお
り、これらに外部リード線１５．１６をそれぞれ接続す
る。This platinum thin film temperature sensor is manufactured as follows. That is, as shown in FIG.
A platinum thin film is sputter-deposited on the substrate, and then a zigzag pattern of the temperature sensing resistor 12 is formed by, for example, laser trimming or wet etching. Electrode terminal portions 13.14 are formed at both ends of the temperature sensing resistor 12, and external lead wires 15.16 are connected to these, respectively.
この温度センサには、温度測定時、外部リード線１５．
１６から一定の電流が供給される。測温抵抗体１２はそ
のときの応じて抵抗値が直線的に変化するので、電極端
子部１３．１４間にそれに応じた電圧変化が生じる。こ
の電圧変化量を温度変化に換算することにより、温度を
精度よ（知ることができる。This temperature sensor has an external lead wire 15.
A constant current is supplied from 16. Since the resistance value of the temperature sensing resistor 12 changes linearly depending on the situation, a corresponding voltage change occurs between the electrode terminal portions 13 and 14. By converting this amount of voltage change into temperature change, the temperature can be determined with precision.
発明が解決しようとする問題点
しかしながら、このような従来の白金薄膜温度センサは
、セラミック基板を使用しているものではその小型化に
限界がある。すなわち、セラミッり表面の平滑性があま
りよ（ないので、測温抵抗体のパターンをより微細化す
ることができない。Problems to be Solved by the Invention However, there is a limit to miniaturization of such conventional platinum thin film temperature sensors that use ceramic substrates. That is, the smoothness of the ceramic surface is not very good, so it is not possible to make the pattern of the resistance temperature detector even finer.
また、半導体基板たとえばシリコン基板を用いたもので
は、絶縁膜に測温抵抗体を強固に付着させることがむず
かしい。すなわち、白金は化学的に安定な物質であり、
そのため白金薄膜を基板上に形成しても、それから剥離
しやすい。ただ、一部の金属とよく反応し合金化する性
質があるので、絶縁膜と白金薄膜との間にこの金属の薄
膜を介在させて、半導体基板への接着性を高めることが
行われている。しかし、その場合には、この金属が白金
薄膜に拡散して、その抵抗温度係数を低下させてしまう
。Furthermore, when a semiconductor substrate such as a silicon substrate is used, it is difficult to firmly attach the temperature measuring resistor to the insulating film. In other words, platinum is a chemically stable substance;
Therefore, even if a platinum thin film is formed on a substrate, it is easily peeled off. However, since it has the property of reacting well with some metals and forming alloys, a thin film of this metal is interposed between the insulating film and the platinum thin film to improve adhesion to the semiconductor substrate. . However, in that case, this metal would diffuse into the platinum thin film, lowering its temperature coefficient of resistance.
本発明は、上記従来品の欠点を解決することを目的とす
るものである。The present invention aims to solve the drawbacks of the above-mentioned conventional products.
問題点を解決するための手段
この目的を達成するために、本発明の白金薄膜温度セン
サの製造方法は、絶縁性基板上に白金薄膜をイオンブレ
ーティング法で形成し、測温抵抗体とするものである。Means for Solving the Problems In order to achieve this objective, the method for manufacturing a platinum thin film temperature sensor of the present invention involves forming a platinum thin film on an insulating substrate by an ion-blating method to form a resistance temperature sensor. It is something.
作用
この方法では、白金薄膜がイオンブレーティング法で絶
縁性基板上に形成されるので、その表面に強固に付着す
る。Function: In this method, a platinum thin film is formed on an insulating substrate by an ion-blating method, so that it firmly adheres to the surface of the insulating substrate.
実施例
以下、本発明の一実施例について、図面を参照しながら
説明する。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings.
第１図（ａ）は本発明の一実施例における白金薄膜温度
センサの斜視図、同図（ｂ）はその断面図である。FIG. 1(a) is a perspective view of a platinum thin film temperature sensor according to an embodiment of the present invention, and FIG. 1(b) is a sectional view thereof.
まず、シリコン基板１の一生面上にたとえばシリコン酸
化物もしくはシリコン窒化物などからなる絶縁膜２を公
知の方法で形成する。それから、絶縁膜２上にマイクロ
波イオンブレーティング法で白金薄膜を形成し、さらに
、この白金薄膜をレーザトリミング法または湿式エツチ
ング法などで選択的に除去して、所定の櫛形パターンの
測温抵抗体３を形成する。測温抵抗体３の形成後、それ
をシリコン酸化物もしくはシリコン窒化物などからなる
保護膜４で被覆する。First, an insulating film 2 made of, for example, silicon oxide or silicon nitride is formed on the whole surface of a silicon substrate 1 by a known method. Then, a platinum thin film is formed on the insulating film 2 by a microwave ion blating method, and this platinum thin film is selectively removed by a laser trimming method or a wet etching method to form a temperature measuring resistor in a predetermined comb-shaped pattern. Form body 3. After forming the temperature sensing resistor 3, it is covered with a protective film 4 made of silicon oxide, silicon nitride, or the like.
この実施例の方法においては、マイクロ波イオンブレー
ティング法を使用しているので、マイクロ波によって、
励起されたプラズマの電子温度を高くすることができ、
イオンの密度を大きくすることができる。この雰囲気の
中で蒸発する白金はイオン化され、活性化されるので、
他の材料との結合が強められる。そのため、白金薄膜か
らなる測温抵抗体３はシリコン基板１および絶縁膜２か
らなる下地基板に強固に付着する。In the method of this example, the microwave ion blating method is used, so the microwave
The electron temperature of the excited plasma can be increased,
The density of ions can be increased. The platinum that evaporates in this atmosphere is ionized and activated, so
Bonds with other materials are strengthened. Therefore, the temperature measuring resistor 3 made of a platinum thin film is firmly attached to the base substrate made of the silicon substrate 1 and the insulating film 2.
なお、上記のような半導体基板表面に絶縁膜を形成した
支持基板に代えて、絶縁物からなる支持基板を用いても
よいには言うまでもないことである。It goes without saying that a support substrate made of an insulator may be used instead of the support substrate having an insulating film formed on the surface of the semiconductor substrate as described above.
発明の効果
本発明の方法は、絶縁性基板上に測温抵抗体を構成すべ
き白金薄膜をイオンブレーティング法で形成しているの
で、白金薄膜からなる側温抵抗体を基板に強固に付着さ
せることができる。またこの方法によれば、量産性に優
れているので、センサのコストを低減することができる
。Effects of the Invention In the method of the present invention, the platinum thin film that constitutes the resistance temperature detector is formed on the insulating substrate by the ion-blating method, so that the side temperature resistance element made of the platinum thin film is firmly attached to the substrate. can be done. Moreover, this method is excellent in mass productivity, and thus the cost of the sensor can be reduced.
第１図（ａ）は本発明の白金薄膜温度センサの製造方法
の一実施例によるセンサの斜視図、同図（ｂ）はその断
面図である。第２図は従来の白金薄膜温度センサの斜視
図である。
１・・・・・・シリコン基板、２・・・・・・絶縁膜、
３・・・・・・白金薄膜からなる測温抵抗体、４・・・
・・・保護膜。FIG. 1(a) is a perspective view of a sensor according to an embodiment of the method for manufacturing a platinum thin film temperature sensor of the present invention, and FIG. 1(b) is a sectional view thereof. FIG. 2 is a perspective view of a conventional platinum thin film temperature sensor. 1... Silicon substrate, 2... Insulating film,
3...Resistance temperature sensor made of platinum thin film, 4...
···Protective film.
Claims (1)
成し、所定のパターンの測温抵抗体を形成することを特
徴とする白金薄膜温度センサの製造方法。1. A method for manufacturing a platinum thin film temperature sensor, which comprises forming a platinum thin film on an insulating substrate by an ion blating method to form a temperature measuring resistor in a predetermined pattern.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9896987A JPS63263702A (en) | 1987-04-22 | 1987-04-22 | Manufacture of platinum thin film temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9896987A JPS63263702A (en) | 1987-04-22 | 1987-04-22 | Manufacture of platinum thin film temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63263702A true JPS63263702A (en) | 1988-10-31 |
Family
ID=14233882
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9896987A Pending JPS63263702A (en) | 1987-04-22 | 1987-04-22 | Manufacture of platinum thin film temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63263702A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0330834U (en) * | 1989-08-03 | 1991-03-26 | ||
| JP2013213585A (en) * | 2013-06-04 | 2013-10-17 | Nsk Ltd | Bearing device |
-
1987
- 1987-04-22 JP JP9896987A patent/JPS63263702A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0330834U (en) * | 1989-08-03 | 1991-03-26 | ||
| JP2013213585A (en) * | 2013-06-04 | 2013-10-17 | Nsk Ltd | Bearing device |
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