JPH05298625A - Magneto-resistance effect element and its manufacture - Google Patents

Magneto-resistance effect element and its manufacture

Info

Publication number
JPH05298625A
JPH05298625A JP9923192A JP9923192A JPH05298625A JP H05298625 A JPH05298625 A JP H05298625A JP 9923192 A JP9923192 A JP 9923192A JP 9923192 A JP9923192 A JP 9923192A JP H05298625 A JPH05298625 A JP H05298625A
Authority
JP
Japan
Prior art keywords
effect element
alumina substrate
electrode
magnetoresistive effect
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9923192A
Other languages
Japanese (ja)
Inventor
Koichi Ikemoto
浩一 池本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP9923192A priority Critical patent/JPH05298625A/en
Publication of JPH05298625A publication Critical patent/JPH05298625A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To solve such a problem that a protection film is broken owing to a dieing and water enters from the broken part to cause a pattern to corrode and have an open circuit and such a problem that man-hours as many as dieing processes are required as to the magneto-resistance effect element which uses a glazed alumina substrate as its base and has a pattern of a fine (<=tens of mum) thin film. CONSTITUTION:An electrode 4 is formed on the alumina substrate 1, glass glaze 2 is formed on one surface of the alumina substrate 1 to less than element size in contact with the electrode 4, and a metallic thin film 3 is formed on the glass glaze 2 so that the film is connected to the electrode 4. Consequently, the open circuit due to corrosion can be eleminated and the dieing process can also be eliminated.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は下地にグレーズドアルミ
ナ基板を用いた磁気抵抗効果素子及びその製造方法に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect element using a glaze alumina substrate as an underlayer and a method for manufacturing the same.

【0002】[0002]

【従来の技術】近年、磁気抵抗効果素子は検出感度、精
度の向上のため、素子面を被検出物に対して平行かつ最
近接に設置できるような構造(素子面の平滑なもの)が
求められている。加えて、素子特性面からは下地基板表
面の平滑性が求められる。このため磁気抵抗効果素子
は、アルミナ基板の上に、酸化珪素、酸化アルミニウ
ム、酸化バリウム、酸化カルシウム等を主成分とする表
面平滑性に優れる高融点ガラスによるグレーズを設ける
とともに、基板の角にガラスと接した表裏を結ぶ電極を
設け、そしてグレーズ上に強磁性体からなる検出パター
ンを電極と接続して設け、さらに検出パターンを覆う無
機の保護膜及び全面を覆う有機の保護膜を設けるととも
に、裏面電極からリード線を取り出すという構成であっ
た。そして、その製造方法は以下のようであった。ま
ず、裏面にチップサイズ間隔ごとにV溝がありかつV溝
の交点にスルーホールがあるアルミナ基板のスルーホー
ルとランド以外の全表面に、酸化珪素、酸化アルミニウ
ム、酸化バリウム、酸化カルシウムを主成分とするガラ
スペーストをスクリーン印刷して1200℃で焼成し
た。さらに電極用の銀パラジウムペーストをランドとス
ルーホールにスクリーン印刷して850℃で焼成した
後、グレーズ側全面にパーマロイ等の強磁性体を蒸着
し、レジスト塗布、露光、現像、エッチング、レジスト
剥離を経て電極と接した目的形状の感磁パターンを得
た。そして、例えばSiOをパターン上に蒸着した後、
各スルーホールを4分割するようにまずグレーズだけを
ダイシングし、次にV溝に沿って基板を折って角板形状
の素子を得、その後、裏面電極にリード線をはんだ付け
するというものであった。
2. Description of the Related Art In recent years, in order to improve detection sensitivity and accuracy, magnetoresistive effect elements are required to have a structure (element surface is smooth) which can be placed parallel to and closest to the object to be detected. Has been. In addition, in terms of device characteristics, the smoothness of the surface of the base substrate is required. For this reason, the magnetoresistive element is provided on the alumina substrate with a glaze made of high melting point glass containing silicon oxide, aluminum oxide, barium oxide, calcium oxide, etc. as a main component and having excellent surface smoothness, and at the corners of the substrate. An electrode connecting the front and back sides in contact with, and a detection pattern made of a ferromagnetic material connected to the electrode is provided on the glaze, and an inorganic protective film that covers the detection pattern and an organic protective film that covers the entire surface are provided, The lead wire was taken out from the back electrode. And the manufacturing method was as follows. First, silicon oxide, aluminum oxide, barium oxide, and calcium oxide are the main components on all surfaces except the through holes and lands of the alumina substrate, which has V grooves on the back surface at each chip size interval and through holes at the intersections of the V grooves. The glass paste described below was screen-printed and fired at 1200 ° C. Furthermore, after silver-palladium paste for electrodes is screen-printed on the land and through holes and baked at 850 ° C., a ferromagnetic material such as permalloy is vapor-deposited on the entire glaze side, and resist coating, exposure, development, etching, and resist stripping are performed. After that, a magneto-sensitive pattern having a target shape in contact with the electrode was obtained. Then, for example, after depositing SiO on the pattern,
First, only the glaze is diced so that each through hole is divided into four, then the substrate is bent along the V groove to obtain a rectangular plate-shaped element, and then the lead wire is soldered to the back surface electrode. It was

【0003】[0003]

【発明が解決しようとする課題】しかしながら上記のよ
うな構成では、基板のスルーホールのピッチの公差が大
きいためある点にて位置合わせした後、連続してダイシ
ングする工法において保護膜を切断破壊することがあっ
た。保護膜が切断破壊された素子は、グレーズと保護膜
の間にできた隙間から水が侵入するとパターンが腐食断
線するという問題点を有していた。
However, in the above structure, since the through hole pitch of the substrate has a large tolerance, the protective film is cut and destroyed in a dicing method after the positioning is performed at a certain point. There was something. The element in which the protective film is cut and destroyed has a problem that the pattern is corroded and broken when water enters through a gap formed between the glaze and the protective film.

【0004】本発明は上記課題を解決するために、耐環
境性に優れた磁気抵抗効果素子及びその製造方法を提供
するものである。
In order to solve the above problems, the present invention provides a magnetoresistive effect element having excellent environment resistance and a method for manufacturing the same.

【0005】[0005]

【課題を解決するための手段】上記目的を達成するため
に本発明の磁気抵抗効果素子は、アルミナ基板に形成さ
れた電極と、アルミナの片面上に素子サイズより小さ
く、かつ電極と接触して形成されたガラスグレーズと、
このガラスグレーズ上に電極と接続するように形成され
た所定の形状の金属薄膜からなるパターン部を有するこ
とを特徴とするものである。
In order to achieve the above object, a magnetoresistive effect element of the present invention comprises an electrode formed on an alumina substrate and an element which is smaller than the element size on one side of alumina and is in contact with the electrode. With the formed glass glaze,
The glass glaze is characterized by having a pattern portion formed of a metal thin film having a predetermined shape formed so as to be connected to the electrode.

【0006】[0006]

【作用】この作用によれば、グレーズが各素子に独立に
形成されているので、分割時にダイシングを必要としな
い。従って、保護膜の切断破壊が発生しないので、素子
の信頼性が向上し、かつダイシング工程の削減による工
数の低減が図れる。
According to this function, since the glaze is formed independently in each element, dicing is not necessary at the time of division. Therefore, since the protective film is not cut and broken, the reliability of the element is improved and the number of steps can be reduced by reducing the dicing process.

【0007】[0007]

【実施例】【Example】

(実施例1)以下、本発明の一実施例の磁気抵抗効果素
子及びその製造方法について図面を参照しながら説明す
る。図1は本発明の一実施例における磁気抵抗効果素子
の断面図、図2は本発明の一実施例における磁気抵抗効
果素子の上面図、図6はグレーズの形成位置を示す図で
ある。なお、図7は、図6と対比させるための従来の磁
気抵抗効果素子の上面図である。図1において、1は四
角形状のアルミナ基板、2は酸化鉛と酸化ホウ素と酸化
珪素を主成分とするガラスグレーズ、3は金属薄膜、4
は電極、5,6は保護膜である。
(Embodiment 1) A magnetoresistive effect element according to an embodiment of the present invention and a method for manufacturing the same will be described below with reference to the drawings. FIG. 1 is a cross-sectional view of a magnetoresistive effect element according to an embodiment of the present invention, FIG. 2 is a top view of the magnetoresistive effect element according to an embodiment of the present invention, and FIG. Note that FIG. 7 is a top view of a conventional magnetoresistive effect element for comparison with FIG. 6. In FIG. 1, 1 is a quadrangular alumina substrate, 2 is a glass glaze containing lead oxide, boron oxide, and silicon oxide as main components, 3 is a metal thin film, 4
Are electrodes, and 5 and 6 are protective films.

【0008】本発明の一実施例の磁気抵抗効果素子は、
アルミナ基板1の4隅に表裏を接続するための銀:パラ
ジウムの比が13:87である電極4があり、そして酸
化鉛50wt%を酸化ホウ素5wt%と酸化珪素35w
t%と酸化アルミニウム5wt%を主成分とするガラス
グレーズ2が電極4に隣接するように接触してアルミナ
基板1の一部を覆っている。その上に、金属薄膜3であ
る厚みが0.1μm、幅が10μmのパーマロイがスト
ライプを折り返したような形状をして電極に接して設け
られ、パーマロイ膜とガラスグレーズ2を保護膜5であ
るSiOが覆い、全表面を同じく保護膜6であるエポキ
シ系樹脂が覆った構成である。なおグレーズ2の表面粗
度は0.20μmRa以下である。
The magnetoresistive element according to one embodiment of the present invention is
There are electrodes 4 having a silver: palladium ratio of 13:87 for connecting the front and back at four corners of the alumina substrate 1, and 50 wt% of lead oxide, 5 wt% of boron oxide and 35 w of silicon oxide.
A glass glaze 2 containing t% and aluminum oxide 5 wt% as main components is in contact with the electrode 4 so as to be adjacent thereto, and covers a part of the alumina substrate 1. A metal thin film 3 having a thickness of 0.1 μm and a width of 10 μm, which is made of permalloy, is formed on the electrode in contact with the electrode, and the permalloy film and the glass glaze 2 serve as a protective film 5. This is a structure in which SiO is covered and the entire surface is covered with an epoxy resin which is also the protective film 6. The surface roughness of the glaze 2 is 0.20 μmRa or less.

【0009】以上のように構成された本発明の磁気抵抗
効果素子と従来の磁気抵抗効果素子について、信頼試験
(PCT(121℃,2気圧,100%湿度)100
H,恒温恒湿放置(60℃,95%湿度)2000H,
恒温恒湿負荷(60℃,95%,5V印加)1000
H)を行った。各試験における不良数を(表1)に示
す。表より明らかなように、従来品では断線不良が発生
したが、本発明の磁気抵抗効果素子では不良は発生しな
かった。
With respect to the magnetoresistive effect element of the present invention and the conventional magnetoresistive effect element thus constructed, a reliability test (PCT (121 ° C., 2 atm, 100% humidity) 100
H, constant temperature and humidity (60 ° C, 95% humidity) 2000H,
Constant temperature and humidity load (60 ° C, 95%, 5V applied) 1000
H) was performed. The number of defects in each test is shown in (Table 1). As is apparent from the table, the conventional product had a disconnection defect, but the magnetoresistive element of the present invention did not.

【0010】以上のことから、本発明の磁気抵抗効果素
子が従来品より耐環境信頼性に優れることがわかる。
From the above, it can be seen that the magnetoresistive effect element of the present invention is more excellent in environmental resistance reliability than conventional products.

【0011】[0011]

【表1】 (実施例2)以下、本発明実施例1の磁気抵抗効果素子
の製造方法について図面を参照しながら説明する。図3
は本発明の一実施例における磁気抵抗効果素子の工程
図、図4は従来の磁気抵抗効果素子の工程図、図5
(a)はアルミナ白基板の上面図、図5(b)はアルミ
ナ白基板の裏面図である。
[Table 1] (Embodiment 2) Hereinafter, a method of manufacturing a magnetoresistive effect element according to Embodiment 1 of the present invention will be described with reference to the drawings. Figure 3
5 is a process drawing of a magnetoresistive effect element in one embodiment of the present invention, FIG. 4 is a process drawing of a conventional magnetoresistive effect element, FIG.
FIG. 5A is a top view of the alumina white substrate, and FIG. 5B is a back view of the alumina white substrate.

【0012】まず、基板の裏面に素子サイズ間隔でV溝
7があり、かつV溝7の交点にスルーホール8があるア
ルミナ基板1(図5参照)のスルーホール8とランド形
成部に、例えばパラジウムと銀の比が13:87である
導体ペーストをスクリーン印刷して900℃で焼成した
後、例えば酸化鉛50wt%と酸化ホウ素5wt%と酸
化珪素35wt%と酸化アルミニウム5wt%を無機分
中の主成分とするガラスペーストを図6に示す範囲にス
クリーン印刷して800℃で焼成した。
First, in the through hole 8 and the land forming portion of the alumina substrate 1 (see FIG. 5) having V grooves 7 on the back surface of the substrate at element size intervals and having through holes 8 at the intersections of the V grooves 7, for example, After screen-printing a conductor paste having a ratio of palladium to silver of 13:87 and firing at 900 ° C., for example, 50 wt% of lead oxide, 5 wt% of boron oxide, 35 wt% of silicon oxide and 5 wt% of aluminum oxide are contained in the inorganic content. The glass paste as the main component was screen-printed in the range shown in FIG. 6 and fired at 800 ° C.

【0013】この基板を真空蒸着機に設置し、所定の真
空度に排気した後、パーマロイを0.1μmの厚さで蒸
着し、さらにレジスト塗布、露光、現像、エッチング、
レジスト剥離を行って、幅10μmのストライプを折り
返したようなパターン形状の感磁部を得た。その後、こ
の基板を真空蒸着機に設置し、所定の真空度に排気した
後、グレーズ2より少し大きい範囲(図6参照)にSi
Oを蒸着した。基板を取り出し、基板表面にエポキシ樹
脂をスクリーン印刷して150℃で硬化した。その後、
基板をV溝に沿って割って、図1,図2に示したような
素子255個を得、さらに裏面電極にリード線をはんだ
付けした。
This substrate was placed in a vacuum vapor deposition machine, evacuated to a predetermined vacuum degree, permalloy was vapor-deposited to a thickness of 0.1 μm, and resist coating, exposure, development, etching,
The resist was stripped off to obtain a magnetic sensing part having a pattern shape in which a stripe having a width of 10 μm was folded back. After that, this substrate was placed in a vacuum vapor deposition machine, and after evacuation to a predetermined degree of vacuum, Si was placed in a range slightly larger than glaze 2 (see FIG. 6).
O was vapor deposited. The substrate was taken out, and an epoxy resin was screen-printed on the surface of the substrate and cured at 150 ° C. afterwards,
The substrate was divided along the V groove to obtain 255 elements as shown in FIGS. 1 and 2, and a lead wire was soldered to the back surface electrode.

【0014】従来例との比較(図3,4参照)により明
らかなように、本実施例の磁気抵抗効果素子の製造方法
によれば、ダイシング工程が削除できることがわかる。
As is clear from the comparison with the conventional example (see FIGS. 3 and 4), the dicing process can be eliminated by the method of manufacturing the magnetoresistive effect element according to the present embodiment.

【0015】以上のように、本発明の製造方法は、工数
の低減(工数の簡略化)に効果があることがわかる。
As described above, the manufacturing method of the present invention is effective in reducing the man-hours (simplifying the man-hours).

【0016】[0016]

【発明の効果】以上のように本発明によれば、表面粗度
に優れた酸化鉛と酸化ホウ素と酸化珪素と酸化アルミニ
ウムを主成分とするガラスグレーズを素子サイズより小
さい範囲に形成することによりダイシング工程の削除が
可能となるとともに、保護膜破壊が無くなり、耐環境信
頼性が高い磁気抵抗効果素子を得ることができる。
As described above, according to the present invention, the glass glaze containing lead oxide, boron oxide, silicon oxide, and aluminum oxide, which are excellent in surface roughness, as the main components is formed in a range smaller than the element size. It is possible to eliminate the dicing process, eliminate destruction of the protective film, and obtain a magnetoresistive effect element having high environmental resistance reliability.

【図面の簡単な説明】[Brief description of drawings]

【図1】本実施例の磁気抵抗効果素子の断面図FIG. 1 is a cross-sectional view of a magnetoresistive effect element according to this embodiment.

【図2】本実施例の磁気抵抗効果素子の上面図FIG. 2 is a top view of the magnetoresistive effect element according to the present embodiment.

【図3】本実施例の磁気抵抗効果素子の製造工程図FIG. 3 is a manufacturing process diagram of the magnetoresistive effect element according to the present embodiment.

【図4】従来の磁気抵抗効果素子の製造工程図FIG. 4 is a manufacturing process diagram of a conventional magnetoresistive effect element.

【図5】(a),(b)は本発明の磁気抵抗効果素子の
製造に使用するアルミナ白基板の上面図及び裏面図
5 (a) and 5 (b) are a top view and a back view of an alumina white substrate used for manufacturing the magnetoresistive effect element of the present invention.

【図6】本実施例の磁気抵抗効果素子のグレーズの形成
位置を示す上面図
FIG. 6 is a top view showing a formation position of a glaze of the magnetoresistive effect element according to the present embodiment.

【図7】従来の磁気抵抗効果素子のグレーズの形成位置
を示す上面図
FIG. 7 is a top view showing a formation position of a glaze of a conventional magnetoresistive effect element.

【符号の説明】[Explanation of symbols]

1 アルミナ基板 2 ガラスグレーズ 3 金属薄膜 4 電極 1 Alumina substrate 2 Glass glaze 3 Metal thin film 4 Electrode

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】アルミナ基板と、このアルミナ基板に形成
された電極と、アルミナの片面上に素子サイズより小さ
くかつ前記電極と接触して形成されたガラスグレーズ
と、このガラスグレーズ上に前記電極と接続するように
形成された所定の形状の金属薄膜からなるパターン部と
を有する磁気抵抗効果素子。
1. An alumina substrate, an electrode formed on the alumina substrate, a glass glaze which is smaller than the element size and is in contact with the electrode on one surface of alumina, and the electrode on the glass glaze. A magnetoresistive effect element having a pattern portion formed of a metal thin film having a predetermined shape, which is formed so as to be connected.
【請求項2】ガラスグレーズの表面粗度が0.20μm
Ra以下であることを特徴とする請求項1記載の磁気抵
抗効果素子。
2. A glass glaze having a surface roughness of 0.20 μm.
The magnetoresistive effect element according to claim 1, wherein the magnetoresistive effect element is Ra or less.
【請求項3】素子に対応するサイズ間隔でスルーホール
を設けたアルミナ基板にスルーホールを含めて電極を形
成するための導体ペーストをスクリーン印刷した後焼成
する工程と、前記アルミナ基板表面に前記素子毎にかつ
その素子サイズより小さくなるようにかつ電極と接する
ようにガラスペーストをスクリーン印刷して焼成する工
程と、そのアルミナ基板表面に電極と接続するように所
定形状の金属薄膜からなるパターン部を形成する工程
と、前記アルミナ基板を個々の素子に分割する工程とを
有することを特徴とする磁気抵抗効果素子の製造方法。
3. A step of screen-printing a conductor paste for forming electrodes including the through holes on an alumina substrate having through holes provided at size intervals corresponding to the elements and then firing, and the element on the surface of the alumina substrate. A step of screen-printing and firing a glass paste so as to be smaller than the element size and in contact with the electrodes, and a pattern part made of a metal thin film of a predetermined shape so as to be connected to the electrodes on the surface of the alumina substrate. A method of manufacturing a magnetoresistive effect element, comprising: a forming step; and a step of dividing the alumina substrate into individual elements.
JP9923192A 1992-04-20 1992-04-20 Magneto-resistance effect element and its manufacture Pending JPH05298625A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9923192A JPH05298625A (en) 1992-04-20 1992-04-20 Magneto-resistance effect element and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9923192A JPH05298625A (en) 1992-04-20 1992-04-20 Magneto-resistance effect element and its manufacture

Publications (1)

Publication Number Publication Date
JPH05298625A true JPH05298625A (en) 1993-11-12

Family

ID=14241908

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9923192A Pending JPH05298625A (en) 1992-04-20 1992-04-20 Magneto-resistance effect element and its manufacture

Country Status (1)

Country Link
JP (1) JPH05298625A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077742A (en) * 1998-09-01 2000-03-14 Matsushita Electric Ind Co Ltd Magnetoresistive element
JP2008275456A (en) * 2007-04-27 2008-11-13 Atago:Kk Concentration measuring device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077742A (en) * 1998-09-01 2000-03-14 Matsushita Electric Ind Co Ltd Magnetoresistive element
JP2008275456A (en) * 2007-04-27 2008-11-13 Atago:Kk Concentration measuring device

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