JPS63209103A - Temperature sensor - Google Patents
Temperature sensorInfo
- Publication number
- JPS63209103A JPS63209103A JP4198587A JP4198587A JPS63209103A JP S63209103 A JPS63209103 A JP S63209103A JP 4198587 A JP4198587 A JP 4198587A JP 4198587 A JP4198587 A JP 4198587A JP S63209103 A JPS63209103 A JP S63209103A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- platinum thin
- silicon
- film
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 75
- 229910052697 platinum Inorganic materials 0.000 claims description 39
- 239000010409 thin film Substances 0.000 claims description 37
- 239000010408 film Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 16
- 229910052710 silicon Inorganic materials 0.000 claims description 16
- 239000010703 silicon Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 9
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 150000003057 platinum Chemical class 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は温度センサ、特に白金薄膜抵抗体を用いた温度
センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a temperature sensor, and particularly to a temperature sensor using a platinum thin film resistor.
従来の技術
従来から高精度、高信頼性の温度センサとして白金温度
センサが使用されており、さらには白金薄膜温度センサ
も開発されている。この白金薄膜温度センサは白金薄膜
を使用しているものであるために、薄膜製造技術で容易
に製造でき、高精度、高信頼性を有し、かつ小型で安価
であるという特長をもっている。2. Description of the Related Art Platinum temperature sensors have been used as highly accurate and reliable temperature sensors, and platinum thin film temperature sensors have also been developed. Since this platinum thin film temperature sensor uses a platinum thin film, it can be easily manufactured using thin film manufacturing technology, has high precision, high reliability, and has the features of being small and inexpensive.
この白金薄膜温度センサは、第２図に示すように、セラ
ミック基板１１に白金薄膜をスパッタ蒸着し、さらにた
とえばレーザトリミング法または湿式エツチング性など
によりジグザグ状の白金薄膜抵抗体１２を形成したもの
である。この白金薄膜抵抗体１２の両端部には電極端子
部１３．１４が形成されており、これらに外部リード線
１５゜１６がそれぞれ接続されている。As shown in FIG. 2, this platinum thin film temperature sensor has a platinum thin film deposited on a ceramic substrate 11 by sputtering, and a zigzag shaped platinum thin film resistor 12 formed by, for example, laser trimming or wet etching. be. Electrode terminal portions 13 and 14 are formed at both ends of this platinum thin film resistor 12, and external lead wires 15 and 16 are connected to these, respectively.
温度測定時には、外部リード線１５．１６から一定の電
流を供給し、電極端子部１３．１４間の電圧を測定する
。白金薄膜抵抗体１２はその温度に応じて抵抗値が直線
的に変化するので、電極端子部１３．１４間にそれに応
じた電圧変化が生じる。この電圧変化量を温度変化に換
算することにより、温度を知ることができる。When measuring temperature, a constant current is supplied from the external lead wires 15, 16, and the voltage between the electrode terminals 13, 14 is measured. Since the resistance value of the platinum thin film resistor 12 changes linearly depending on its temperature, a corresponding voltage change occurs between the electrode terminal portions 13 and 14. The temperature can be determined by converting this amount of voltage change into a temperature change.
発明が解決しようとする問題点
しかしながら−１このような従来の白金薄膜温度センサ
は、セラミック基板を使用しているものではその小型化
に限界がある。すなわち、セラミッり表面の平滑性があ
まりよ（ないので、白金薄膜抵抗体のパターンをより微
細化することができない。また、半導体基板たとえばシ
リコン基板を用いたものでは、絶縁膜に白金薄膜抵抗体
を強固に付着させることがむずかしい。すなわち、白金
は化学的に安定な物質であり、他の材料とは容易には反
応しない。そのため、白金薄膜は剥離しやすい。ただ、
一部の金属とよ（反応し合金化する性質があるので、絶
縁膜と白金薄膜との間にこの金属の薄膜を介在させて、
半導体基板への接着性を高めることが行われている。し
かし、その場合には、この金属が白金薄膜に拡散して、
白金薄膜自体の抵抗温度係数を低下させてしまう。Problems to be Solved by the Invention However, there are limits to miniaturization of such conventional platinum thin film temperature sensors that use ceramic substrates. In other words, the smoothness of the ceramic surface is not very good, so it is not possible to make the pattern of the platinum thin film resistor even finer.In addition, when using a semiconductor substrate such as a silicon substrate, the platinum thin film resistor is not formed on the insulating film. Platinum is a chemically stable substance and does not react easily with other materials.Therefore, platinum thin films are easily peeled off.However, platinum thin films are easily peeled off.
Since it has the property of reacting and alloying with some metals, a thin film of this metal is interposed between the insulating film and the platinum thin film.
Efforts are being made to improve adhesion to semiconductor substrates. However, in that case, this metal diffuses into the platinum thin film,
This lowers the temperature coefficient of resistance of the platinum thin film itself.
本発明は、上記従来品の欠点を解決することを目的とす
るものである。The present invention aims to solve the drawbacks of the above-mentioned conventional products.
問題点を解決するための手段
本発明の白金薄膜温度センサは、半導体基板の絶縁膜上
に二酸化珪素と珪素との混合膜を形成し、この混合膜上
に白金薄膜抵抗体を形成°してなるものである。Means for Solving the Problems The platinum thin film temperature sensor of the present invention is produced by forming a mixed film of silicon dioxide and silicon on an insulating film of a semiconductor substrate, and forming a platinum thin film resistor on this mixed film. It is what it is.
作用
この構成により、基板が絶縁膜で覆われた半導体基板で
あるため、その表面が平滑であり、またイオン注入層の
介在で白金薄膜抵抗体が基板表面に強固に付着する。Operation With this configuration, since the substrate is a semiconductor substrate covered with an insulating film, its surface is smooth, and the platinum thin film resistor is firmly attached to the substrate surface through the interposition of the ion implantation layer.
実施例
以下、本発明の一実施例の温度センサについて、第１図
を参照しながら説明する。同図（ａ）はこの実施例の斜
視図、同図（ｂ）はその断面図である。EXAMPLE Hereinafter, a temperature sensor according to an example of the present invention will be explained with reference to FIG. FIG. 5(a) is a perspective view of this embodiment, and FIG. 2(b) is a sectional view thereof.
図において、１は半導体基板たとえばシリコン基板１で
、その主面上には酸化膜、窒化膜、もしくは他の方法に
よる絶縁膜２が形成されている。In the figure, reference numeral 1 denotes a semiconductor substrate such as a silicon substrate 1, on the main surface of which an insulating film 2 formed of an oxide film, a nitride film, or another method is formed.
３は二酸化シリコンとシリコンとの混合膜で、シランガ
スとＮ２０ガスとを用いた化学堆積法（ＣＶＤ法）によ
り絶縁膜２上に形成された、シリコンとシリコン酸化物
、窒化物との混合膜である。3 is a mixed film of silicon dioxide and silicon, which is a mixed film of silicon, silicon oxide, and nitride formed on the insulating film 2 by a chemical deposition method (CVD method) using silane gas and N20 gas. be.
この混合膜３の厚さは、５００〜２００ＯＡ程度でよい
。また、この混合膜３は６００〜１０００℃の範囲内の
温度でアニールされるため、その形成後の工程に熱処理
工程が含まれていてもさしっかえない。４は白金薄膜抵
抗体で、混合膜３上に白金をスパッタ蒸着し、それをレ
ーザトリミング法または湿式エツチング法などで所定の
パターンに形成されたものである。５，６は電極、７は
酸化シリコンのような不活性な物質からなる保護膜で、
この保護膜７に設けられた窓を通して電極５．６が白金
薄膜抵抗体４の端部に接続されている。The thickness of this mixed film 3 may be about 500 to 200 OA. Further, since this mixed film 3 is annealed at a temperature within the range of 600 to 1000°C, it is acceptable even if the process after its formation includes a heat treatment process. 4 is a platinum thin film resistor, which is formed by sputtering platinum onto the mixed film 3 and forming it into a predetermined pattern by laser trimming or wet etching. 5 and 6 are electrodes, 7 is a protective film made of an inert substance such as silicon oxide,
An electrode 5.6 is connected to the end of the platinum thin film resistor 4 through a window provided in the protective film 7.
このように、二酸化シリコンとシリコンとの混合膜３を
シリコン基板上１の絶縁膜２と白金薄膜抵抗体４との間
に形成することで、白金薄膜抵抗体４が絶縁膜２ひては
シリコン基板１に強固に付着する。In this way, by forming the mixed film 3 of silicon dioxide and silicon between the insulating film 2 on the silicon substrate 1 and the platinum thin film resistor 4, the platinum thin film resistor 4 can be bonded to the insulating film 2 and silicon. It firmly adheres to the substrate 1.
一般に、シリコンと白金とは反応するので、白金薄膜抵
抗体４中にシリコンが拡散して、その抵抗温度係数を低
下させるといわれている。しかしながら、二酸化シリコ
ンとシリコンとの混合膜３は化学的に安定しており、こ
の混合膜３中のシリコンの内部結合が強いため、白金薄
膜抵抗体４と混合膜３とはその接触部分でのみ反応する
程度であり、白金薄膜抵抗体４の抵抗温度係数に実質的
な影響を及ぼすことな（、両者の付着力を強化させる作
用をする。Generally, silicon and platinum react, so silicon diffuses into the platinum thin film resistor 4 and is said to lower its temperature coefficient of resistance. However, the mixed film 3 of silicon dioxide and silicon is chemically stable, and the internal bond of silicon in this mixed film 3 is strong, so that the platinum thin film resistor 4 and the mixed film 3 are only in contact with each other at the contact part. It reacts only to the extent that it does not substantially affect the temperature coefficient of resistance of the platinum thin film resistor 4 (it acts to strengthen the adhesion between the two).
発明の効果
本発明の白金薄膜温度センサにおいては、半導体基板表
面の絶縁膜と白金薄膜抵抗体との間に二酸化シリコンと
シリコンとの混合膜を形成しているので、この白金薄膜
抵抗体が半導体基板に強固に接着する。そして、このイ
オン注入層は白金薄膜抵抗体の抵抗温度係数を低下させ
ることがなく、温度特性が良好なものである。そして、
半導体基板さらにはその上の酸化膜の表面が平滑である
ので、非常に細密なパターンの白金薄膜抵抗体を得るこ
とができる。Effects of the Invention In the platinum thin film temperature sensor of the present invention, a mixed film of silicon dioxide and silicon is formed between the insulating film on the surface of the semiconductor substrate and the platinum thin film resistor. Adheres firmly to the substrate. This ion-implanted layer does not lower the temperature coefficient of resistance of the platinum thin film resistor and has good temperature characteristics. and,
Since the surface of the semiconductor substrate and the oxide film thereon are smooth, a platinum thin film resistor with a very fine pattern can be obtained.
第１図（ａ）は本発明の一実施例における白金薄膜温度
センサの斜視図、同図（ｂ）はその断面図、第２図は従
来の白金薄膜温度センサの斜視図である。
１・・・・・・シリコン基板、２・・・・・・絶縁膜、
３・・・・・・二酸化シリコンとシリコンとの混合膜、
４・・・・・・白金薄膜抵抗体。
代理人の氏名 弁理士 中尾敏男 ほか１名Ｉ−−−シ
リコン厚オ叉
２−一一鞄？＠、表
３−一一二瞼ヒシリコンとシリ
第 ｌ 図 曜との混合池４−
−−色金島哀抵抗俸
（久）
（ｂ）FIG. 1(a) is a perspective view of a platinum thin film temperature sensor according to an embodiment of the present invention, FIG. 1(b) is a sectional view thereof, and FIG. 2 is a perspective view of a conventional platinum thin film temperature sensor. 1... Silicon substrate, 2... Insulating film,
3...Mixed film of silicon dioxide and silicon,
4...Platinum thin film resistor. Agent's name: Patent attorney Toshio Nakao and one other person @, Table 3-Mixing pond 4-
--Ikinajima Ai resistance salary (Kyu) (b)
Claims (1)
縁膜と、前記絶縁膜上に形成されている二酸化珪素と珪
素との混合膜と、前記混合膜上に形成されている白金薄
膜抵抗体とを有することを特徴とする温度センサ。a semiconductor substrate, an insulating film formed on the semiconductor substrate, a mixed film of silicon dioxide and silicon formed on the insulating film, and a platinum thin film resistor formed on the mixed film. A temperature sensor characterized by having:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4198587A JPS63209103A (en) | 1987-02-25 | 1987-02-25 | Temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4198587A JPS63209103A (en) | 1987-02-25 | 1987-02-25 | Temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63209103A true JPS63209103A (en) | 1988-08-30 |
Family
ID=12623491
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4198587A Pending JPS63209103A (en) | 1987-02-25 | 1987-02-25 | Temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63209103A (en) |
-
1987
- 1987-02-25 JP JP4198587A patent/JPS63209103A/en active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4288776A (en) | Passivated thin-film hybrid circuits | |
| KR100246977B1 (en) | Metal oxide film resistor | |
| US4791398A (en) | Thin film platinum resistance thermometer with high temperature diffusion barrier | |
| JPS61100956A (en) | Monobrid integrated circuit | |
| US4613404A (en) | Materials which exhibit a surface active effect with vacuum baked photoresists and method of using the same | |
| JPS63209103A (en) | Temperature sensor | |
| JPS61181104A (en) | Platinum temperature measuring resistor | |
| JP2993156B2 (en) | Gas sensor | |
| JPS61181103A (en) | Platinum temperature measuring resistor | |
| JP2001057358A (en) | Method of fabricating sensor with thin film | |
| JPS63263702A (en) | Manufacture of platinum thin film temperature sensor | |
| JPS63209102A (en) | Temperature sensor | |
| JPS63208751A (en) | Condensation sensor | |
| JPH01208808A (en) | Thin-film platinum temperature sensor | |
| JPH0360064A (en) | Semiconductor device and manufacture thereof | |
| JPH0322062B2 (en) | ||
| JP3241190B2 (en) | Capacitive humidity sensor | |
| KR20010022088A (en) | Method of manufacturing sensor and resistor element | |
| RU2200300C2 (en) | Semiconductor deformation converter and process of its manufacture | |
| JPS62131589A (en) | Ferromagnetic magnetoresistance element and manufacture thereof | |
| JPS63269502A (en) | Thin-film platinum temperature sensor | |
| JPS6041252A (en) | Manufacture of hybrid integrated circuit | |
| JPS62291072A (en) | Semiconductor pressure sensor | |
| JPH06151124A (en) | Manufacture of thin-film resistor | |
| JPS63160365A (en) | Insulating substrate for semiconductor device |