JPH0258304A - Thin film platinum temperature sensor - Google Patents
Thin film platinum temperature sensorInfo
- Publication number
- JPH0258304A JPH0258304A JP21023188A JP21023188A JPH0258304A JP H0258304 A JPH0258304 A JP H0258304A JP 21023188 A JP21023188 A JP 21023188A JP 21023188 A JP21023188 A JP 21023188A JP H0258304 A JPH0258304 A JP H0258304A
- Authority
- JP
- Japan
- Prior art keywords
- platinum
- film
- thin
- thin film
- temperature sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 32
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 5
- 230000001681 protective effect Effects 0.000 abstract description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000002075 main ingredient Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 238000000992 sputter etching Methods 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本宅間は、自動車用、家庭電化製品用、及び工業計器等
に使用される薄膜白金温度センサに関するものである。DETAILED DESCRIPTION OF THE INVENTION The field of industrial application relates to thin film platinum temperature sensors used in automobiles, home appliances, industrial instruments, and the like.
従来の技術
従来の温度センサは、高精度ではあるものの、高価で取
扱いが煩わしいものと、簡便で大量に使用できるものの
、精度が悪いものとに大別でき、用途に応じて使いわけ
られている。Conventional technology Conventional temperature sensors can be broadly divided into those that have high accuracy but are expensive and cumbersome to handle, and those that are simple and can be used in large quantities but have low accuracy, and are used depending on the purpose. .
しかしながら、最近のエレクトロニクスの急激な進歩に
より、自動車用などの精密温度センサを中心に、堅牢で
大量に使用ができ、かつ高精度な温度センｆが要求され
るようになってきた。特に、自動車用については、安価
でかつ小型で精度が高く、温度範囲が広く直線的な抵抗
値変化をし、また振動に対して強く、熱応答性の良いも
のが要求されている。従来より、精密温度センサとして
は、白金側温抵抗体が用いられているが、白金線を使用
するため抵抗値は６ｏΩ、１００Ωと低く、そのため周
辺回路が腹雅になり、また周辺回路の雑音等の影響を受
やすいという問題があり、併せて形状も犬きく、更に振
動及び衝撃に弱い。さらに、白金線を細くすることには
限界があるから高価な白金線を相当大量に使用すること
になるとともに、白金線を１本ずつセラミックボビン等
に巻きつけて作製していくため大量生産は不可能であっ
て相当高価なものとなっていた。However, with recent rapid advances in electronics, there has been a demand for temperature sensors f that are robust, can be used in large quantities, and have high accuracy, mainly for precision temperature sensors for automobiles and the like. In particular, for automobiles, there is a need for something that is inexpensive, compact, highly accurate, has a wide temperature range, exhibits a linear resistance change, is strong against vibrations, and has good thermal responsiveness. Traditionally, platinum temperature resistors have been used as precision temperature sensors, but because platinum wire is used, the resistance is low at 6oΩ or 100Ω, which makes the peripheral circuits bulky and noise from the peripheral circuits. It also has the problem of being susceptible to the effects of other factors, and also has an awkward shape and is vulnerable to vibrations and shocks. Furthermore, since there is a limit to how thin platinum wire can be made, a considerable amount of expensive platinum wire is used, and mass production is difficult because the platinum wire is wound one by one around a ceramic bobbin. This would have been impossible and quite expensive.
・このような問題点を解決するために、白金線の代わり
に白金の厚膜や薄膜を用いた温度センサが開発されてい
る。しかし、厚膜白金温度センサは、スクリーン印刷技
術によるため１００μｍ以下の微細パターンが困難、製
造上のバラツキが大きい等の欠点を有している。- In order to solve these problems, temperature sensors using thick or thin platinum films instead of platinum wires have been developed. However, thick-film platinum temperature sensors have drawbacks such as difficulty in forming fine patterns of 100 μm or less because they are based on screen printing technology, and large manufacturing variations.
一方、薄膜白金温度センサば、パターンの微細化が容易
なため、小型化ができ、また高抵抗化による高感度化を
図れ、更に、機械的強度が強く、ウェハー処理によって
バラツキが小さくでき、量学に適し、低価格化が可能で
ある等の長所を有するっ
発明が解決しようとする課題
薄膜白金温度センサの製造方法としては、まず、真空大
ＩＳ法、スパッタリング法等により、絶縁基板上に白金
薄膜を付着させ、湿式エツチング法。On the other hand, thin-film platinum temperature sensors can be miniaturized because the pattern can be easily made fine, and high sensitivity can be achieved by increasing the resistance.Furthermore, they have strong mechanical strength, and can reduce variations through wafer processing. The problem to be solved by the invention, which has the advantages of being suitable for science and can be made at a low price A thin platinum film is attached and wet etched.
スバ、７タエツチング法等の方法で微細パターン化し、
高温で熱処理を行う、。その後、トリミングによる抵抗
値調整、リード線取り出し、保護膜コーティングを行う
、この際、絶縁基板としては、アルミナ基板等が用いら
れる。しかし、この方？去でｆＴ製した薄膜白金温度セ
ンサは、従来の白金測温抵抗体に比べ、抵抗温度係数が
低くなり、温度センサとしての感度が低下するという問
題があった。Finely patterned using methods such as suba and 7-etching methods,
Perform heat treatment at high temperature. Thereafter, the resistance value is adjusted by trimming, the lead wires are taken out, and a protective film is coated. At this time, an alumina substrate or the like is used as the insulating substrate. But this one? The thin film platinum temperature sensor manufactured by fT had a problem in that the temperature coefficient of resistance was lower than that of the conventional platinum resistance temperature sensor, and the sensitivity as a temperature sensor was lowered.
本発明は、上記の問題点を解決するもので、薄い白金膜
で高い抵抗温度係数を有する薄膜白金温度センサを安価
で提供することを目的とするものである。The present invention solves the above-mentioned problems, and aims to provide a thin film platinum temperature sensor having a high temperature coefficient of resistance with a thin platinum film at low cost.
課題を解決するための手段
これらの問題を解決するため本発明は、ジルコニアを主
成分とする絶縁基板上に白金抵抗薄膜と電極を形成した
ことを特徴とするものである。Means for Solving the Problems In order to solve these problems, the present invention is characterized in that a platinum resistive thin film and an electrode are formed on an insulating substrate mainly composed of zirconia.
作用
本発明は上記したジルコニアを主成分とする絶縁基板上
に白金抵抗薄膜を形成することにより、白金膜の結晶性
が高くなり、バルクと同等の高い抵抗温度係数が得られ
るものである１、実施例
以下、本発明の一実施例を添ｆ・１の第１図を用いて説
明する。Function The present invention improves the crystallinity of the platinum film by forming a platinum resistive thin film on the above-mentioned insulating substrate containing zirconia as a main component, and provides a high temperature coefficient of resistance equivalent to that of the bulk. EXAMPLE Hereinafter, an example of the present invention will be described with reference to FIG. 1 in Appendix f.1.
図において、１は幅３−１長さ１０ ｍｍ 、厚さ０．
８５Ｗｎのジルコニア基板であり、２はこのジルコニア
基板１上にスパッタリング法によりｐｔを約０．５μｍ
着膜し、スパノタエ、チング法によりパターン形成され
た白金抵抗薄膜、３はこの白金抵抗薄膜２と接続される
リード線引き出し用の電極、４は白金抵抗薄膜を被覆す
る５１０２からなる保護膜でちる。また５は電極３に接
続される＋７−ド線である。In the figure, 1 has a width of 3-1, a length of 10 mm, and a thickness of 0.
2 is a zirconia substrate of 85Wn, and PT is deposited on this zirconia substrate 1 to a thickness of about 0.5 μm by sputtering.
A platinum resistive thin film is deposited and patterned by the spanometry or ching method, 3 is an electrode for drawing out lead wires connected to the platinum resistive thin film 2, and 4 is a protective film made of 5102 that covers the platinum resistive thin film. . Further, 5 is a +7- line connected to the electrode 3.
表２に本実施例における薄膜白金温度センサ及びアルミ
ナ基板を用いた従来例の抵抗温度係数（１００℃２／○
℃）とＸ線回折法による白金膜の結晶性Ｍ折結果を示す
。これかられかるように、本大池例では従来例に比べ、
白金膜の結晶性が高くなり、３８５０１）ｐｍ／℃とバ
ルクと同等の抵抗温４度係数を得ることができた。。Table 2 shows the resistance temperature coefficient (100℃2/○
℃) and the crystalline M-fraction results of the platinum film by X-ray diffraction method. As you will see, in this Oike example, compared to the conventional example,
The crystallinity of the platinum film became high, and a resistance temperature coefficient of 4 degrees Celsius equivalent to that of the bulk could be obtained, which was 38501) pm/°C. .
表１ 実施例と従来例の特性比較
発明の効果
以上のように本発明によれば、ジルコニアを主成分とす
る絶縁基板を用いたので薄膜白金互変センサとしては従
来に比べ、薄い白金膜で高い抵抗温度係数が得られ、高
感度の４嘆白金温度センサが安価で作製できる等の効果
が得られる。Table 1 Comparison of characteristics between embodiments and conventional examples Effects of the invention As described above, according to the present invention, since an insulating substrate containing zirconia as the main component is used, a thin film platinum chromatic sensor can be used with a thinner platinum film than in the past. A high temperature coefficient of resistance can be obtained, and a highly sensitive four-layer platinum temperature sensor can be manufactured at low cost.
第１図は本発明の一実施例による薄膜白金温度センサの
断面図である。
１・・・・・・ジルコニア基板、２・・・・・・白金薄
膜、３・・・・・電極、４・・・・・・保護膜、５・・
・・・リード線、。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名Ｉ−
、ジルコニア基板
２・−白主簿暎
３−ｔ 砒
４・−保Ｊ腰FIG. 1 is a cross-sectional view of a thin film platinum temperature sensor according to an embodiment of the present invention. 1...zirconia substrate, 2...platinum thin film, 3...electrode, 4...protective film, 5...
···Lead,. Name of agent: Patent attorney Shigetaka Awano and one other person I-
, zirconia substrate 2・-white main register 3-t 璒4・-main J waist
Claims (1)
電極とを形成したことを特徴とする薄膜白金温度センサ
。A thin film platinum temperature sensor characterized by forming a platinum resistive thin film and an electrode on an insulating substrate mainly composed of zirconia.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21023188A JPH0258304A (en) | 1988-08-24 | 1988-08-24 | Thin film platinum temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21023188A JPH0258304A (en) | 1988-08-24 | 1988-08-24 | Thin film platinum temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0258304A true JPH0258304A (en) | 1990-02-27 |
Family
ID=16585956
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21023188A Pending JPH0258304A (en) | 1988-08-24 | 1988-08-24 | Thin film platinum temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0258304A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942756A (en) * | 1992-02-20 | 1999-08-24 | Imation Corp. | Radiation detector and fabrication method |
| WO2008138887A1 (en) * | 2007-05-16 | 2008-11-20 | Innovative Sensor Technology Ist Ag | Resistance thermometer |
| JP2012517004A (en) * | 2009-02-06 | 2012-07-26 | ヘレーウス ゼンゾール テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング | Non-conductive zirconium dioxide |
-
1988
- 1988-08-24 JP JP21023188A patent/JPH0258304A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5942756A (en) * | 1992-02-20 | 1999-08-24 | Imation Corp. | Radiation detector and fabrication method |
| US6262421B1 (en) | 1992-02-20 | 2001-07-17 | Imation Corp. | Solid state radiation detector for x-ray imaging |
| WO2008138887A1 (en) * | 2007-05-16 | 2008-11-20 | Innovative Sensor Technology Ist Ag | Resistance thermometer |
| US8106740B2 (en) | 2007-05-16 | 2012-01-31 | Innovative Sensor Technology Ist Ag | Resistance thermometer |
| EP3327415A1 (en) * | 2007-05-16 | 2018-05-30 | Innovative Sensor Technology IST AG | Resistance thermometer |
| JP2012517004A (en) * | 2009-02-06 | 2012-07-26 | ヘレーウス ゼンゾール テクノロジー ゲゼルシャフト ミット ベシュレンクテル ハフツング | Non-conductive zirconium dioxide |
| US8730002B2 (en) | 2009-02-06 | 2014-05-20 | Heraeus Sensor Technology Gmbh | Non-conducting zirconium dioxide |
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