JPH0258303A - Thin film platinum temperature sensor - Google Patents
Thin film platinum temperature sensorInfo
- Publication number
- JPH0258303A JPH0258303A JP21022988A JP21022988A JPH0258303A JP H0258303 A JPH0258303 A JP H0258303A JP 21022988 A JP21022988 A JP 21022988A JP 21022988 A JP21022988 A JP 21022988A JP H0258303 A JPH0258303 A JP H0258303A
- Authority
- JP
- Japan
- Prior art keywords
- film
- platinum
- thermal conductivity
- thin film
- board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 27
- 239000010409 thin film Substances 0.000 title claims abstract description 15
- 239000010408 film Substances 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 5
- 238000004544 sputter deposition Methods 0.000 abstract description 5
- 238000000992 sputter etching Methods 0.000 abstract description 3
- 230000001681 protective effect Effects 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 229910044991 metal oxide Inorganic materials 0.000 abstract 1
- 150000004706 metal oxides Chemical class 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、自助車用、家庭電化製品用、および工覇計Ｓ
序：て使用される専摸白金１度センサに関するものであ
る。[Detailed Description of the Invention] Industrial Fields of Application The present invention is applicable to self-help vehicles, home appliances, and industrial meters.
Introduction: This article relates to a specialized platinum 1 degree sensor used in
従来の技術 従来の温度センサ′ハ、高情度ではあるものの。Conventional technology Although conventional temperature sensors are sensitive.
高価で取扱いが項わしいものと、簡便で大量に使用でき
るものの、情・変が悪いものとに大別でき。They can be broadly divided into those that are expensive and difficult to handle, and those that are simple and can be used in large quantities, but that have a negative impact.
用途に応じて、使い分けられている。They are used differently depending on the purpose.
しかしながら、最近のエレクトロニクスの急激なａ歩に
より、自動車用等の精密温度センサを中心に、堅牢で、
大量に使用ができ、かつ高精度な温度センサが要求され
るようになってきた。特に。However, with the rapid advancement of electronics in recent years, precision temperature sensors for automobiles, etc.
There is a growing demand for temperature sensors that can be used in large quantities and have high accuracy. especially.
自助車用については、安浦でかつ小型で情ｙが高く、温
度値開が広く直線的な抵抗値変化をし、まだ振動に対し
て強く、熱応答性の良いものが要求されている。従来よ
り、清密温圧セ／すとしては。For use in self-help vehicles, there is a need for a Yasuura, compact, and highly sensitive material with a wide temperature range and linear resistance change, strong resistance to vibration, and good thermal response. Traditionally, it has been used as a clean, hot and pressurized cell.
白金測温抵抗対が用いられているが、白金線を使用する
ため抵抗値°は一５０Ω、１００Ωと低く。A platinum thermometer resistance pair is used, but since platinum wire is used, the resistance value is low at -50Ω or 100Ω.
そのため周辺同格が複雑てなり、また周辺回路の雑音等
の影Ｊを受けやすいという問題があり、併すて形状も大
きく、央に振動及び衝撃て弱い。さらに、白金線を洲く
することに：は限界があるから高価な白金線を１本ずつ
セラミックボピ／等に巻つけて作製していくため大量生
産・′ｄ不可能であって相当高師なものとなっていた。Therefore, there is a problem that the peripheral apposition is complicated and that it is susceptible to the influence of noise from the peripheral circuit.In addition, the shape is large and the center is vulnerable to vibrations and shocks. Furthermore, there is a limit to the use of platinum wires, so mass production is impossible because expensive platinum wires are wrapped one by one around ceramic wires, etc., which is quite sophisticated. It became.
このような問題点を解決するために、白金線の代わりに
白金の４模や薄１漠を用いた温度センサが開発されてい
る。しかし、４模白金温変センサは。In order to solve these problems, temperature sensors have been developed that use platinum wires or thin wires instead of platinum wires. However, the 4-simulated platinum temperature change sensor.
スクリーン印刷技術知よるため１００μｍ以下の微細パ
ターンが困難、製造とのバラツキが大きい等の欠截を有
している。Since screen printing technology is well known, it is difficult to produce fine patterns of 100 μm or less, and there are drawbacks such as large manufacturing variations.
一方、薄膜白金互変センサは、パターンの微刑化が容易
なため、小製化、ができ、また高抵抗化による高、゛＆
変化を図れ、更に、機械的適度が強く。On the other hand, thin-film platinum chromatographic sensors can be made smaller because the pattern can be easily made finer, and they also have high resistance due to high resistance.
Aim for change, and furthermore, have strong mechanical moderation.
ウニ・・−処理によってバラツキが小さくでき、量産に
適し、低面洛化が可能である等の長所を有する。Sea urchin: It has the advantages of being able to reduce variations through processing, being suitable for mass production, and allowing for low surface production.
発明が解決しようとする課題 ”奪莫白金、＠度センサの製造方法としては、まず。Problems that the invention aims to solve ``First of all, as a manufacturing method for the platinum @ degree sensor.
貞空蒸若法、スパッタリング法等により、絶縁基板上に
数Ｐオングストローム膜Ｊの白金薄膜を付着させ、湿式
エツチング法、スパッタエツチング法等の方法で微刊パ
ターン化し、大気中で９００〜１０００’Ｃの高温で＠
処理を行なう。その後。A thin platinum film of a few P angstroms is deposited on an insulating substrate by an air evaporation method, a sputtering method, etc., and a fine pattern is formed by a wet etching method, a sputter etching method, etc. @ at high temperature of C
Process. after that.
トリミング；てよる抵抗値調條、リード線取り出し。Trimming: Adjust resistance value by hand, take out lead wire.
保護、漠コーティングを行なう。この際、絶縁基板とし
ては、アルミナ基板等が用いられる。しかしア・レミナ
基板上にＩＩ！接白金薄漠を付着させる現在の方式では
、基体の熱伝導率が高すぎるため、感温部である白金間
以外の部分への勢の拡散が多く、感温部への熱効率低下
の原因となっていた。Provide protection and vague coating. At this time, an alumina substrate or the like is used as the insulating substrate. However, on the A Remina board II! In the current method of attaching platinum dust, the thermal conductivity of the substrate is too high, so the energy tends to diffuse to areas other than between the platinum, which is the temperature-sensing part, which is the cause of a decrease in thermal efficiency to the temperature-sensing part. It had become.
さらに、基体の帯びた熱が白金膜に伝わりやすぐなると
、その熱のために外部からの熱に対する熱応答性の低下
が著しかった。以上により、センサ自体の塾応答性の向
上が困難であった。またアルミナ基数以外の熱伝導率の
低い基板では、コスト面において不適当であった。Furthermore, as soon as the heat from the substrate was transferred to the platinum film, the thermal response to external heat was significantly lowered due to the heat. Due to the above, it has been difficult to improve the cram school responsiveness of the sensor itself. In addition, substrates other than those having alumina bases and having low thermal conductivity are unsuitable in terms of cost.
以北のように、従来のｉｆ材料では多くの問題があった
。As mentioned above, there are many problems with conventional IF materials.
本発明、ま、これらの問題点を解決するもので、熱応答
速度が速く、測定１１４度が良く１機械的強度に優れた
薄膜白金互変センサを提供することを目的とするもので
ある。The present invention solves these problems, and aims to provide a thin film platinum tautomic sensor that has a fast thermal response speed, good measurement of 114 degrees, and excellent mechanical strength.
課題を解決するための手段
これらの問題を解決するため本発明、ま、基板上に基板
材料より熱伝導率の低い材料の薄膜を形成し、その上し
て白金抵抗膜と−ｔｔａを形１戊したことを特徴とする
もつである。Means for Solving the Problems In order to solve these problems, the present invention forms a thin film of a material having a lower thermal conductivity than the substrate material on a substrate, and then forms a platinum resistive film and -tta in the form 1. This is a type of motsu that is characterized by its cylindrical shape.
作用
本発明は、上記した基板北に基板材料より熱云導率の低
い材料の薄膜を形成することにより、感温部り白金薄膜
を基体より独立させ、さら：（基板に帯びた熱が白金薄
膜に文了す影響を抑えて、センサ自身のＶｉｔと熱応冴
速Ｗの向上を図ることができる。Effect of the present invention By forming a thin film of a material with lower thermal conductivity than the substrate material on the north side of the substrate, the platinum thin film in the temperature sensing part is made independent from the base body, and furthermore: The Vit and thermal response speed W of the sensor itself can be improved by suppressing the influence of damage to the thin film.
実、施例
以下、５位発明の一実本例を添付の第１図を用いて説明
する。EXAMPLE Hereinafter, an example of the fifth invention will be explained with reference to the attached FIG. 1.
１図（ておいて、１は席３朋、長さ１０肩肩、１享さ０
．５雅のアルミナ基板であり、２′まこのアルミナ基板
１上に基数材料より熱伝導率の低い材料である金属俊化
吻のＭｇＯと５１０２をスパッタリングにより形成した
約１μｍ厚の混合膜である。３はスパッタリング法によ
り白金を約０．５μｍ着摸し、スパッタエツチング法て
よりパターン形成された白金抵抗゛偉漠、４・まこの白
金１１（抗）厚、漢３と接続されるリード線引出し用の
電極、５・す白金抵抗薄膜３を波層する５１０２からな
る保、！漠である。また６は電極４に接続されるリード
線である。ここで使用されているアルミナ基板１の、勢
伝導率ハ０５０６０ａｅ、 ｒ＊ ／、ｉ 、 ５ｅｃ
、 ’Ｃ、ＭｇＯとＳｉＯ□の混合膜２の熱伝導Ｍ’
ｒ’ｉ ０−００６ ＣＬｅ、 ’Ｍ／ｃｒ？ｒ、 ５
６０ 、 ’Ｃ’１？ある。1 figure (1 is 3 seats, 10 long shoulders, 1 length is 0)
．． This is a mixed film with a thickness of about 1 μm formed by sputtering MgO and 5102, a metal atomization material, which is a material with lower thermal conductivity than the base material, on the alumina substrate 1 of 2'. 3 is a platinum resistor with a thickness of about 0.5 μm deposited by sputtering, and a pattern is formed by sputter etching. Electrode for use, 5. A structure consisting of 5102 which forms a wave layer on a platinum resistive thin film 3.! It's vague. Further, 6 is a lead wire connected to the electrode 4. The conductivity of the alumina substrate 1 used here is 05060ae, r*/, i, 5ec
, 'Heat conduction M of mixed film 2 of C, MgO and SiO□'
r'i 0-006 CLe, 'M/cr? r, 5
60, 'C'1? be.
木実残例ておける温度センサの熱、時定数として温度七
ンサを２０℃から１００’Ｃの雰囲気に移した時の２０
℃と１００’Ｃの温免差との６２．３％に相当する抵抗
（直に達するまでの時間を測定したところ、アルミナ基
板のみを用いたものの約１１５となり、熱応答ヰが大面
に改善された。The heat of the temperature sensor in the case of remaining tree nuts, the time constant is 20 when the temperature sensor is moved from 20℃ to 100'C atmosphere.
The resistance corresponds to 62.3% of the temperature difference between ℃ and 100'C (when we measured the time it took to reach the temperature directly, it was approximately 115% using only an alumina substrate, and the thermal response was greatly improved. It was done.
発明′７）効果
以上のようだ本発明でよれば、基板上で基板材料より熱
伝導率の低い薄膜を形成したものを用いると、を摸白金
温度センサとしては。Invention '7) Effects As described above, according to the present invention, a thin film having a lower thermal conductivity than the substrate material is formed on a substrate, and can be used as a platinum temperature sensor.
（１）熱応答性が速い。(1) Fast thermal response.
（２）測定情愛に優れる。(2) Excellent in measuring affection.
等の効果が得られる。Effects such as this can be obtained.
第１図は本発明の一実施例による薄膜白金互変センサの
断面図である。
１・・・・・アルミナ基板、２・・・・・・混合膜、３
・・・白金抵抗薄膜、４・・・・電極、５・・・・・
保護膜、６・・・・・・リード線。FIG. 1 is a sectional view of a thin film platinum tautomic sensor according to an embodiment of the present invention. 1...Alumina substrate, 2...Mixed film, 3
...Platinum resistance thin film, 4...Electrode, 5...
Protective film, 6...Lead wire.
Claims (1)
に感温白金膜と電極を形成したことを特徴とする薄膜白
金温度センサ。A thin film platinum temperature sensor characterized in that a thin film having lower thermal conductivity than the base is formed on a base, and a temperature-sensitive platinum film and an electrode are formed on the thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21022988A JPH0258303A (en) | 1988-08-24 | 1988-08-24 | Thin film platinum temperature sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21022988A JPH0258303A (en) | 1988-08-24 | 1988-08-24 | Thin film platinum temperature sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0258303A true JPH0258303A (en) | 1990-02-27 |
Family
ID=16585923
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21022988A Pending JPH0258303A (en) | 1988-08-24 | 1988-08-24 | Thin film platinum temperature sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0258303A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100395246B1 (en) * | 2001-04-06 | 2003-08-21 | 정귀상 | Resistance thermometer device for micro thermal sensors and its fabrication method |
| KR100444633B1 (en) * | 2002-07-03 | 2004-08-16 | 한국과학기술원 | A thin film type micro-thermal sensor, and a method of fabricating the same |
-
1988
- 1988-08-24 JP JP21022988A patent/JPH0258303A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100395246B1 (en) * | 2001-04-06 | 2003-08-21 | 정귀상 | Resistance thermometer device for micro thermal sensors and its fabrication method |
| KR100444633B1 (en) * | 2002-07-03 | 2004-08-16 | 한국과학기술원 | A thin film type micro-thermal sensor, and a method of fabricating the same |
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