JPH0688802A - Ambient gas sensor - Google Patents

Ambient gas sensor

Info

Publication number
JPH0688802A
JPH0688802A JP2045992A JP2045992A JPH0688802A JP H0688802 A JPH0688802 A JP H0688802A JP 2045992 A JP2045992 A JP 2045992A JP 2045992 A JP2045992 A JP 2045992A JP H0688802 A JPH0688802 A JP H0688802A
Authority
JP
Japan
Prior art keywords
chamber
substrate
thin film
detection
cover
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2045992A
Other languages
Japanese (ja)
Other versions
JP3083901B2 (en
Inventor
Junji Manaka
順二 間中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Seiki Co Ltd
Original Assignee
Ricoh Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Seiki Co Ltd filed Critical Ricoh Seiki Co Ltd
Priority to JP04020459A priority Critical patent/JP3083901B2/en
Publication of JPH0688802A publication Critical patent/JPH0688802A/en
Application granted granted Critical
Publication of JP3083901B2 publication Critical patent/JP3083901B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Abstract

PURPOSE:To obtain an ambient gas sensor which has high sensitivity and stable detection characteristics by easily forming an air hole communicating a chamber for detection with the outside air with high accuracy and inexpensively suppressing characteristic variation. CONSTITUTION:A chamber 14 for reference and chamber 15 for detection having the same recessed shape are formed on a silicon substrate 10 by anisotropic etching and, at the same time, an air vent groove 16 extended to the surface of the substrate 10 is formed in the chamber 15. The groove 16 communicates the chamber 15 with the outside air except an opening 16a while the groove 16 is partially closed by a cover 18 jointed to the substrate 10 above the chamber 15. Heating resistors in the chambers 14 and 15 formed in the form of thin wires on a thin film insulator 11 supported by the bridging supporting section of the insulator 11 above the recessed sections.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【技術分野】本発明は、雰囲気センサの構造に関し、よ
り詳細には、温度センサ,ガスセンサ等の雰囲気ガスを
検知する雰囲気センサの構造に関する。
TECHNICAL FIELD The present invention relates to a structure of an atmosphere sensor, and more particularly to a structure of an atmosphere sensor such as a temperature sensor and a gas sensor for detecting an atmosphere gas.

【0002】[0002]

【従来技術】従来、ガスセンサとして、金属酸化物半導
体の内部に電極と、電極を兼ねたヒータを内蔵し、該金
属酸化物半導体をヒータにより加熱した時に該金属酸化
物半導体の抵抗値が該金属酸化物半導体の表面でのガス
吸着によって下がることを利用したものが提案されてい
るが、消費電力が大きく、乾電池駆動には適さないとい
う問題があった。この点を改良すべく、架橋構造や片持
梁構造等、空気中に張り出させた橋架部を設け、この橋
架部の上に金属酸化物半導体を形成するようにし、もっ
て、熱容量を可及的に小さくして応答特性を上げ、且つ
消費電力を低下させる試みが成されている。
2. Description of the Related Art Conventionally, as a gas sensor, a metal oxide semiconductor has a built-in electrode and a heater also serving as an electrode, and when the metal oxide semiconductor is heated by the heater, the resistance value of the metal oxide semiconductor is the metal. There is proposed an oxide semiconductor which utilizes the fact that gas is adsorbed on the surface of the oxide semiconductor to lower it, but there is a problem that it consumes a large amount of power and is not suitable for driving a dry battery. In order to improve this point, a bridge that extends in the air, such as a bridge structure or a cantilever structure, is provided, and a metal oxide semiconductor is formed on this bridge, so that the heat capacity can be increased. Attempts have been made to reduce the power consumption by reducing the power consumption by increasing the response characteristics.

【0003】一方、ガスセンサにおいては、同様の構造
をもつ検出器を2個設け、一方の検出器を周囲雰囲気に
接触させてガス検出用として用い、他方の検出器を周囲
雰囲気に接触させない密封構造とし、この密封構造の検
出器にて周囲の温度を検出して温度補償をすることが行
なわれている。
On the other hand, in the gas sensor, two detectors having the same structure are provided, and one of the detectors is brought into contact with the ambient atmosphere to be used for gas detection, and the other detector is not brought into contact with the ambient atmosphere. Then, the temperature of the surroundings is detected by this detector having a sealed structure to perform temperature compensation.

【0004】図3(a),(b)は、特開平3−927
54号公報に開示された絶対湿度センサの一例を示す平
面図及び断面図で、図示のように、シリコンからなる第
1の基板1に、薄膜抵抗発熱体よりなる検出素子3を設
置する凹部6,7を形成し、基板1の表面に絶縁保護膜
を形成した上、薄膜抵抗発熱体よりなる検出素子3を前
記凹部に架橋支持するよう設置する。
3 (a) and 3 (b) show Japanese Patent Application Laid-Open No. 3-927.
In a plan view and a cross-sectional view showing an example of the absolute humidity sensor disclosed in Japanese Patent Publication No. 54-54, as shown in the figure, a recess 6 for mounting a detection element 3 made of a thin film resistance heating element on a first substrate 1 made of silicon. , 7 are formed, an insulating protective film is formed on the surface of the substrate 1, and the detection element 3 formed of a thin-film resistance heating element is installed so as to be bridge-supported in the recess.

【0005】上記のように構成することにより、熱容量
を小さくした検出素子3の熱が直接基板に熱伝導するの
を抑えて、基板で構成した空間の気体の熱伝導により熱
平衝を保ち、小電力化と応答の高速化を図ることができ
るようにしている。
With the above structure, the heat of the detecting element 3 having a small heat capacity is prevented from being directly conducted to the substrate, and the thermal equilibrium is maintained by the heat conduction of the gas in the space constituted by the substrate, It aims to reduce power consumption and speed up response.

【0006】また、第2の基板2にも基板1に対応する
位置に前記検出素子3用の空間を作るための凹部6,7
と、検出素子3のパッド部9を露出させるための切欠き
部を形成しておき、更に、基板2に接合用の低融点ガラ
スペースト5を図に斜線で示すパターンにスクリーン印
刷した上、前記ペースト中の溶剤を仮焼成で蒸発させ、
続いて参照素子の空間に封入する乾燥空気か一定の既知
の湿度の空気雰囲気中で、基板の1と2を対向させ、図
示のようにそれぞれの凹部で薄膜発熱体の検出素子3を
囲む空間を作る配置にした上、加熱で低融点ガラスを融
解して基板を接合させる。
Further, the second substrate 2 is also provided with recesses 6 and 7 for forming a space for the detection element 3 at a position corresponding to the substrate 1.
And a cutout portion for exposing the pad portion 9 of the detection element 3 is formed. Further, the low melting point glass paste 5 for bonding is screen-printed on the substrate 2 in a pattern shown by diagonal lines in the figure, and The solvent in the paste is evaporated by calcination,
Subsequently, in a dry air or an air atmosphere having a constant known humidity to be enclosed in the space of the reference element, the substrates 1 and 2 are opposed to each other, and the recesses surround the detection element 3 of the thin-film heating element as shown in the drawing. Then, the low melting glass is melted by heating and the substrates are joined.

【0007】以上の接合により、参照側の空間6は外気
と遮断され常に一定の雰囲気に保たれる。この気密封止
される雰囲気は必ずしも大気圧でなくてもよい。このと
き同時に形成される検出側の空間7は対向する位置に接
合部の隙間で形成した通気孔8が構成される。
By the above-mentioned joining, the space 6 on the reference side is shielded from the outside air and always kept in a constant atmosphere. The atmosphere to be hermetically sealed does not necessarily have to be atmospheric pressure. At this time, the space 7 on the detection side formed at the same time has a vent hole 8 formed at a position facing each other with a gap between the joints.

【0008】以上のようにして構成にした湿度センサ
は、2つの検出素子3に電力によって一定のエネルギー
を供給して自己加熱させると、それぞれ参照用空間6と
検出用空間7の水蒸気量、即ち、絶対湿度に対応する空
間の熱伝導度によって放熱し、一定の温度になって、そ
れぞれ一定の抵抗値をもつので、その差をブリッジ回路
の非平衝電位の出力として検出して絶対湿度を計測する
ことができる。
When the humidity sensor configured as described above is supplied with constant energy by electric power to the two detection elements 3 to cause them to self-heat, the amount of water vapor in the reference space 6 and the detection space 7, respectively, that is, , It radiates heat according to the thermal conductivity of the space corresponding to absolute humidity, and it becomes a constant temperature, and each has a constant resistance value, so the difference is detected as the output of the non-balanced potential of the bridge circuit and the absolute humidity is detected. It can be measured.

【0009】上述の従来の雰囲気センサは、参照側の空
間6と検出側の空間7とは、基板1と基板2との凹部6
および7とで形成され、その内容積は等しく、小さい。
参照側の空間6は密閉されていて、薄膜発熱体3の熱が
外部に発放されにくいのに加えて、内壁面は熱輻射によ
り加熱され、検出側の空間7へ熱伝達されるので検出側
の空間6へ温度影響を及ぼす。検出側の空間7と参照側
の空間6との距離が近い程影響が大きく、雰囲気が一定
であっても温度平衡状態とはなりにくく、時間経過とと
もにバランスがずれ易い。しかも、基板2の熱容量が大
きいので、徐々にバランスがくずれていく経時変化があ
る。
In the conventional atmosphere sensor described above, the space 6 on the reference side and the space 7 on the detection side are the recesses 6 between the substrate 1 and the substrate 2.
And 7 and their internal volumes are equal and small.
Since the space 6 on the reference side is hermetically sealed and the heat of the thin film heating element 3 is not easily released to the outside, the inner wall surface is heated by heat radiation and is transferred to the space 7 on the detection side. The temperature influences the space 6 on the side. The closer the distance between the space 7 on the detection side and the space 6 on the reference side is, the larger the influence is. The temperature equilibrium is unlikely to occur even if the atmosphere is constant, and the balance easily shifts with the passage of time. Moreover, since the heat capacity of the substrate 2 is large, there is a change over time in which the balance is gradually lost.

【0010】また、通気孔8は低融点ガラスを融解し、
接合した接合部でガラス厚さにより通気孔8の断面積,
検出側の空間6および参照用の空間7の容積が規定され
るので、ガラス厚さの変化により特性のバラツキも大き
くなる。通気孔8を検出側の空間7の基板2に設ける他
の方法もあるが、このときの通気孔8の孔径は板厚に比
し小さいので、簡易なエッチング加工による孔加工では
精度が上がらず、精度を上げようとするとコスト高にな
る。
Further, the vent hole 8 melts the low melting point glass,
The cross-sectional area of the vent hole 8 at the joined portion depending on the glass thickness,
Since the volumes of the space 6 on the detection side and the space 7 for reference are defined, the variation in the characteristics becomes large due to the change in the glass thickness. There is also another method of providing the vent holes 8 in the substrate 2 in the space 7 on the detection side, but since the hole diameter of the vent holes 8 at this time is smaller than the plate thickness, the accuracy cannot be improved by the hole processing by a simple etching process. If you try to improve the accuracy, the cost will increase.

【0011】図4は、従来の検出側の空間の他の通気孔
を示す図で、検出側の空間6の基板1と基板2との凹部
形状に寸法差を与えて、寸法差に応じた通気孔8の大き
さとするものである。しかし、基板2は検出側の空間6
における薄膜発熱体3のカバーとなるものであるから、
通気孔8の大きさは極小にとどめなければならず、この
ような通気孔8を精度良く製作するためには高いコスト
となる。
FIG. 4 is a view showing another ventilation hole in the conventional space on the detection side. A dimensional difference is given to the concave shape of the substrate 1 and the substrate 2 in the space 6 on the detection side, and the dimensional difference is determined. The size of the vent hole 8 is used. However, the substrate 2 has a space 6 on the detection side.
Since it serves as a cover for the thin film heating element 3 in
The size of the vent hole 8 must be kept to a minimum, and it is expensive to manufacture such a vent hole 8 with high accuracy.

【0012】[0012]

【目的】本発明は、上述のごとき実情に鑑みてなされた
もので、(1)検出用室から外気に連通する通気孔を高
精度で安価に加工し、製品の特性上のバラツキを小さく
すること、更には、(2)高感度で長期安定した特性の
雰囲気センサを提供することを目的とするものである。
[Purpose] The present invention has been made in view of the above-mentioned circumstances, and (1) a ventilation hole communicating from the detection chamber to the outside air is processed with high accuracy and at a low cost to reduce variations in product characteristics. Further, (2) an object of the present invention is to provide an atmosphere sensor having high sensitivity and long-term stable characteristics.

【0013】[0013]

【構成】本発明は、上記目的を達成するために、(1)
同形の凹部を有する基板と、該基板の各々の凹部上に架
橋支持される薄膜絶縁体と、各々の薄膜絶縁体上に形成
された抵抗の等しい発熱抵抗体と、前記凹部を覆被する
カバーとからなり、一方の凹部を密閉して参照用室と
し、他方の凹部を外気に導通する検出用室として、前記
参照用室と検出用室との前記発熱抵抗体の放熱量の差に
基づいて雰囲気を検知する雰囲気センサにおいて、前記
検出用室の凹部から外気への導通を基板凹部底面から表
面に到る通気孔溝を介して行い、該通気孔溝を基板凹部
壁面に形成し、カバー外部に開口したこと、更には、
(2)前記(1)において、前記発熱抵抗体を、参照用
室および検出用室上で架橋される架橋支持部よりも大き
い辺を有する略々正方形の発熱部薄膜絶縁体上に設けた
ことを特徴とするものである。以下、本発明の実施例に
基づいて説明する。
In order to achieve the above object, the present invention provides (1)
A substrate having concave portions of the same shape, a thin film insulator cross-linked and supported on each concave portion of the substrate, a heat-generating resistor formed on each thin film insulator and having the same resistance, and a cover covering the concave portion. And the one recess is hermetically sealed as a reference chamber, and the other recess is used as a detection chamber that conducts to the outside air, based on the difference in the heat radiation amount of the heating resistor between the reference chamber and the detection chamber. In the atmosphere sensor for detecting the atmosphere, the conduction from the recess of the detection chamber to the outside air is performed through the vent hole groove extending from the bottom surface of the board recess to the surface, and the vent groove is formed on the wall surface of the board recess, and the cover is formed. Open to the outside,
(2) In (1) above, the heating resistor is provided on a substantially square heating part thin film insulator having a side larger than a bridge support part bridged in the reference chamber and the detection chamber. It is characterized by. Hereinafter, description will be given based on examples of the present invention.

【0014】図1(a),(b)は、本発明における雰
囲気センサを説明するための図で、(a)図は(b)図
の矢視B−B線平面図、(b)図は(a)図のA−A線
断面図であり、図中、10は基板、11は薄膜絶縁体、
12,13は発熱抵抗体、14は参照用室、15は検出
用室、16は通気孔溝、16aは開口、17,18はカ
バーである。
1 (a) and 1 (b) are views for explaining an atmosphere sensor according to the present invention. FIG. 1 (a) is a plan view taken along the line BB of FIG. 1 (b), and FIG. FIG. 4A is a cross-sectional view taken along the line AA of FIG. 7A, in which 10 is a substrate, 11 is a thin film insulator,
12 and 13 are heating resistors, 14 is a reference chamber, 15 is a detection chamber, 16 is a vent hole groove, 16a is an opening, and 17 and 18 are covers.

【0015】図示の基板10は結晶面が(100)のシ
リコン(Si)の平板で、上面にSiO2の薄膜絶縁体1
1を形成し、更に金属薄膜を蒸着,CVD,スパッタリ
ング等の方法により成膜する。金属薄膜は発熱抵抗体1
2,13を形成するためのもので、酸化に安定な白金等
の金属が使用される。その後、フォトリソグラフィ,異
方性エッチングなどにより、凹形状の参照用室14と、
凹部上に架橋した薄膜絶縁体11上に発熱抵抗体12を
形成する。これと同時に、前記参照用室14と同一凹形
状の検出用室15と、凹部上に架橋した薄膜絶縁体11
上に発熱抵抗体12と同一抵抗の発熱抵抗体13を形成
する。
The substrate 10 shown in the figure is a flat plate of silicon (Si) having a crystal plane of (100) and a thin film insulator 1 of SiO 2 on the upper surface.
1 is formed, and a metal thin film is further formed by a method such as vapor deposition, CVD and sputtering. Metal thin film is a heating resistor 1
Metals such as platinum, which are stable to oxidation, are used to form the layers 2 and 13. After that, by photolithography, anisotropic etching, etc., the concave reference chamber 14 and
The heating resistor 12 is formed on the thin film insulator 11 which is cross-linked on the recess. At the same time, the detection chamber 15 having the same concave shape as the reference chamber 14 and the thin-film insulator 11 bridging over the concave portion
A heating resistor 13 having the same resistance as the heating resistor 12 is formed on the top.

【0016】検出用室15には、凹部の壁面に凹部底面
より基板10の上部面に延びる通気孔溝16が設けられ
ている。該通気孔溝16は、前記凹形状を異方性エッチ
ングするとき、同時に形成される。通気孔溝16の側壁
面を(111)面に選べば凹部形状の面に平行した同一
深さの同一矩形断面の通気孔溝16が形成される。
The detection chamber 15 is provided with a vent hole groove 16 extending from the bottom surface of the recess to the upper surface of the substrate 10 on the wall surface of the recess. The vent groove 16 is formed at the same time when the concave shape is anisotropically etched. If the side wall surface of the vent hole groove 16 is selected to be the (111) plane, the vent hole groove 16 having the same rectangular cross section and the same depth parallel to the concave surface is formed.

【0017】次に、参照用室14上部には凹部をもった
カバー17が基板10上に薄膜絶縁体11を介して覆被
固着され、同様に検出用室15の上部にもカバー17と
同一形状のカバー18が基板10上に覆被固着される。
このとき、検出用室15のカバー17は通気孔溝16の
一部を開口16aして低融点ガラス等で固着される。固
着面のガラス層は通気孔溝16の軸方向に厚さをもって
いるので、ガラス層の厚さに多小のバラツキがあっても
開口16aの面積は変らない。通気孔溝16を検出用室
15内周の対称位置に均等に設けておけば、溝の深さが
一定に加工されているので、カバー17の固着位置が多
少ずれても開口16aの総和の面積は一定となる。
Next, a cover 17 having a concave portion is attached to the upper portion of the reference chamber 14 so as to cover and adhere to the substrate 10 through the thin film insulator 11, and similarly to the upper portion of the detection chamber 15, the same cover 17 is used. A cover 18 having a shape is covered and fixed on the substrate 10.
At this time, the cover 17 of the detection chamber 15 is fixed with a low-melting glass or the like with an opening 16a in a part of the vent hole groove 16. Since the glass layer on the fixing surface has a thickness in the axial direction of the vent hole groove 16, even if there are many variations in the thickness of the glass layer, the area of the opening 16a does not change. If the air vent grooves 16 are evenly provided at symmetrical positions on the inner circumference of the detection chamber 15, the depth of the grooves is processed to be constant, so that even if the fixing position of the cover 17 is slightly displaced, the total opening 16a is The area is constant.

【0018】図2は、検出用室15の詳細な平面図で、
図中、19は発熱部薄膜絶縁体、20,21は架橋支持
部で、図中、図1と同じ作用をする部分には、図1と同
一の参照番号を付している。
FIG. 2 is a detailed plan view of the detection chamber 15.
In the figure, 19 is a heat generating part thin film insulator, and 20 and 21 are bridging support parts. In the figure, parts having the same functions as in FIG. 1 are denoted by the same reference numerals as in FIG.

【0019】基板10には凹部の検出用室15と通気孔
溝16とが形成されるが、薄膜絶縁体11は、検出用室
15の上部に略々正方形の発熱部薄膜絶縁体19と、該
発熱部薄膜絶縁体19を検出用室15の外周面に架橋支
持する架橋支持部20,21の部分が残される。この架
橋支持部20,21の幅は、発熱部薄膜絶縁体19の一
辺よりも狭少である。一方、発熱部薄膜絶縁体19上に
はこれより僅かに小さい面積に発熱抵抗体13が形成さ
れ、対向した架橋支持部21上のリード部13bと基板
10上のパッド部13aとに接続される。
The substrate 10 is formed with a concave detection chamber 15 and a vent groove 16. The thin film insulator 11 has a heating element thin film insulator 19 having a substantially square shape above the detection chamber 15. The portions of the bridge supporting portions 20 and 21 for bridge-supporting the heat generating portion thin film insulator 19 on the outer peripheral surface of the detection chamber 15 are left. The width of the bridge supporting portions 20 and 21 is narrower than one side of the heat generating portion thin film insulator 19. On the other hand, the heat generating resistor 13 is formed on the heat generating portion thin film insulator 19 in an area slightly smaller than this, and is connected to the lead portion 13b on the bridge supporting portion 21 and the pad portion 13a on the substrate 10 which face each other. .

【0020】発熱抵抗体13は、例えばジグザグ状に連
続した細い抵抗線を形成するので、抵抗値を大きくする
ことができ、高感度にすることができる。また、発熱抵
抗体13は架橋支持部21の長さだけ基板10より離間
しているので、発熱抵抗体13を加熱しても基板10へ
の熱伝達が小さく、発熱抵抗体13の全面に亘って均一
に加熱され、一定の発熱分布となる。この結果、図3に
示した従来の検出用室15の上部対称軸に直線状に配設
された発熱抵抗体3と比べると、高感度で安定した雰囲
気ガスを高精度で計測できる。
Since the heating resistor 13 forms a thin resistance wire continuous in, for example, a zigzag pattern, the resistance value can be increased and the sensitivity can be increased. Further, since the heating resistor 13 is separated from the substrate 10 by the length of the bridge supporting portion 21, heat transfer to the substrate 10 is small even if the heating resistor 13 is heated, and the entire heating resistor 13 is covered. It is heated uniformly and has a constant heat generation distribution. As a result, compared with the conventional heating resistor 3 linearly arranged on the upper symmetry axis of the detection chamber 15 shown in FIG. 3, it is possible to measure the ambient gas with high sensitivity and with high accuracy.

【0021】[0021]

【効果】以上の説明から明らかなように、本発明によれ
ば、(1)検出用室の通気孔を、該検出用室の凹部を形
成するために、シリコン基板を異方エッチングすると同
時に加工することができるので加工工数も少なく、しか
も通気孔の開口面積の精度も高くできるので、品質の揃
った雰囲気センサを安価に製造することができる。
(2)発熱抵抗体を基板より離間して架橋される発熱部
薄膜絶縁体上に設けたので熱干渉が小さく、均一な温度
分布をもった高感度の雰囲気センサを提供することがで
きる。
As is apparent from the above description, according to the present invention, (1) the vent hole of the detection chamber is anisotropically etched and simultaneously processed to form the recess of the detection chamber. Therefore, the number of processing steps is small, and the accuracy of the opening area of the ventilation hole can be increased, so that the atmosphere sensor having uniform quality can be manufactured at low cost.
(2) Since the heat generating resistor is provided on the heat generating portion thin film insulator which is separated from the substrate and bridged, it is possible to provide a highly sensitive atmosphere sensor having a small thermal interference and a uniform temperature distribution.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明における雰囲気センサを説明するため
の図である。
FIG. 1 is a diagram for explaining an atmosphere sensor according to the present invention.

【図2】 検出用室15の詳細な平面図である。2 is a detailed plan view of the detection chamber 15. FIG.

【図3】 従来の絶対湿度センサの一例を示す平面図及
び断面図である。
FIG. 3 is a plan view and a cross-sectional view showing an example of a conventional absolute humidity sensor.

【図4】 従来の検出側の空間の他の通気孔を示す図で
ある。
FIG. 4 is a view showing another conventional ventilation hole in the space on the detection side.

【符号の説明】[Explanation of symbols]

10…基板、11…薄膜絶縁体、12,13…発熱抵抗
体、14…参照用室、15…検出用室、16…通気孔
溝、16a…開口、17,18…カバー。
10 ... Substrate, 11 ... Thin film insulator, 12, 13 ... Heating resistor, 14 ... Reference chamber, 15 ... Detection chamber, 16 ... Vent groove, 16a ... Opening, 17, 18 ... Cover.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 同形の凹部を有する基板と、該基板の各
々の凹部上に架橋支持される薄膜絶縁体と、各々の薄膜
絶縁体上に形成された抵抗の等しい発熱抵抗体と、前記
凹部を覆被するカバーとからなり、一方の凹部を密閉し
て参照用室とし、他方の凹部を外気に導通する検出用室
として、前記参照用室と検出用室との前記発熱抵抗体の
放熱量の差に基づいて雰囲気を検知する雰囲気センサに
おいて、前記検出用室の凹部から外気への導通を基板凹
部底面から表面に到る通気孔溝を介して行い、該通気孔
溝を基板凹部壁面に形成し、カバー外部に開口したこと
を特徴とする雰囲気センサ。
1. A substrate having a concave portion of the same shape, a thin film insulator cross-linked and supported on each concave portion of the substrate, a heating resistor having an equal resistance formed on each thin film insulator, and the concave portion. A cover for covering one of the recesses to form a reference chamber, and the other recess to serve as a detection chamber that communicates with the outside air. In an atmosphere sensor for detecting an atmosphere based on a difference in heat quantity, conduction from the recess of the detection chamber to the outside air is performed through a vent hole groove extending from the bottom surface of the board recess to the surface, and the vent groove is formed on the wall surface of the board recess. An atmosphere sensor, which is formed on the cover and opened to the outside of the cover.
【請求項2】 前記発熱抵抗体を、参照用室および検出
用室上で架橋される架橋支持部よりも大きい辺を有する
略々正方形の発熱部薄膜絶縁体上に設けたことを特徴と
する請求項1記載の雰囲気センサ。
2. The heating resistor is provided on a substantially square heating portion thin film insulator having a side larger than a bridge support portion bridged in the reference chamber and the detection chamber. The atmosphere sensor according to claim 1.
JP04020459A 1992-01-08 1992-01-08 Atmosphere sensor Expired - Fee Related JP3083901B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP04020459A JP3083901B2 (en) 1992-01-08 1992-01-08 Atmosphere sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04020459A JP3083901B2 (en) 1992-01-08 1992-01-08 Atmosphere sensor

Publications (2)

Publication Number Publication Date
JPH0688802A true JPH0688802A (en) 1994-03-29
JP3083901B2 JP3083901B2 (en) 2000-09-04

Family

ID=12027666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04020459A Expired - Fee Related JP3083901B2 (en) 1992-01-08 1992-01-08 Atmosphere sensor

Country Status (1)

Country Link
JP (1) JP3083901B2 (en)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009168649A (en) * 2008-01-17 2009-07-30 Ishizuka Electronics Corp Indirect heat type heat-sensitive resistance element, and absolute humidity sensor using the indirect heat type heat-sensitivie resistance element
WO2011043258A1 (en) * 2009-10-05 2011-04-14 北陸電気工業株式会社 Gas sensor element and production method therefor
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EP4191238A1 (en) * 2017-04-11 2023-06-07 InvenSense, Inc. Gas sensing method and device

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