JP2645153B2 - Thin film temperature sensor element - Google Patents

Thin film temperature sensor element

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Publication number
JP2645153B2
JP2645153B2 JP20652589A JP20652589A JP2645153B2 JP 2645153 B2 JP2645153 B2 JP 2645153B2 JP 20652589 A JP20652589 A JP 20652589A JP 20652589 A JP20652589 A JP 20652589A JP 2645153 B2 JP2645153 B2 JP 2645153B2
Authority
JP
Japan
Prior art keywords
thin
film
thin film
sensor element
temperature sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP20652589A
Other languages
Japanese (ja)
Other versions
JPH0371027A (en
Inventor
千春 石倉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Priority to JP20652589A priority Critical patent/JP2645153B2/en
Publication of JPH0371027A publication Critical patent/JPH0371027A/en
Application granted granted Critical
Publication of JP2645153B2 publication Critical patent/JP2645153B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Measuring Temperature Or Quantity Of Heat (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は被測定物の表面温度を測定する薄膜温度セン
サー素子に関する。
Description: TECHNICAL FIELD The present invention relates to a thin-film temperature sensor element for measuring a surface temperature of an object to be measured.

(従来の技術) 従来の薄膜温度センサー素子は、第6図に示す如くAl
N、Al2O3等の基板1の一面に、Pt等の薄膜測温抵抗体2
が設けられ、その両端に薄膜リード線3が接続して設け
られ、その薄膜リード線3の両端に形成された端子部4
に各々Pt等より成る出力取出用ワイヤー5が取付けられ
たものである。
(Prior Art) As shown in FIG.
On one surface of a substrate 1 such as N, Al 2 O 3 , a thin-film RTD 2 such as Pt
The thin film lead wire 3 is connected to both ends of the thin film lead wire 3, and the terminal portions 4 formed at both ends of the thin film lead wire 3 are provided.
And output output wires 5 each made of Pt or the like.

斯かる構成の薄膜温度センサー素子6は、被測定物の
表面温度を測定する際、第7図に示す如く被測定物7の
表面に基板1の他面を接触させて測定するか、または第
8図に示す如く被測定物7の表面に薄膜測温抵抗体2を
接触させて測定するかしている。
When measuring the surface temperature of the object to be measured, the thin-film temperature sensor element 6 having the above-described configuration is configured to contact the surface of the object to be measured 7 with the other surface of the substrate 1 as shown in FIG. As shown in FIG. 8, the measurement is performed by bringing the thin-film resistance thermometer 2 into contact with the surface of the object 7 to be measured.

(発明が解決しようとする課題) ところで、第7図に示す測温の方法では、薄膜測温抵
抗体2と被測定物7との間に基板1が介在する為、熱応
答性が悪く、また薄膜測温抵抗体2の表面が外気にさら
されている為大きな温度勾配が生じ、その結果常温から
100℃の範囲内での測温で薄膜測温抵抗体2の抵抗値に
1%の誤差が生じ、正確な測温ができなかった。また第
8図に示す測温の方法では、図示の如く出力取出用ワイ
ヤー5が邪魔になって薄膜測温抵抗体2を被測定物7に
うまく接触できず、端子部3側が浮き上がって正しい測
温ができなかった。
(Problems to be Solved by the Invention) In the temperature measurement method shown in FIG. 7, the substrate 1 is interposed between the thin-film resistance temperature detector 2 and the object 7 to be measured. Further, since the surface of the thin-film resistance thermometer 2 is exposed to the outside air, a large temperature gradient occurs, and as a result,
When the temperature was measured in the range of 100 ° C., an error of 1% occurred in the resistance value of the thin-film resistance thermometer 2, and accurate temperature measurement could not be performed. In addition, in the temperature measurement method shown in FIG. 8, as shown in the drawing, the output extraction wire 5 hinders the thin-film resistance thermometer 2 from making good contact with the object 7 to be measured, and the terminal portion 3 rises to correct the temperature measurement. Could not warm.

そこで本発明は、薄膜測温抵抗体を被測定物の表面に
直接密着させて正確に測温できる薄膜温度センサー素子
を提供しようとするものである。
SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a thin-film temperature sensor element capable of accurately measuring a temperature by directly contacting a thin-film resistance temperature detector with the surface of an object to be measured.

(課題を解決するための手段) 上記課題を解決するための本発明の薄膜温度センサー
素子は、基板の一面に、両端薄膜リード線付薄膜測温抵
抗体又は薄膜熱電対が設けられ、該薄膜リード線又は薄
膜熱電対の両端部位置にて夫々基板の他面に端子用薄膜
が設けられ、各端子用薄膜と前記薄膜リード線又は薄膜
熱電対の両端部とが基板に穿設せる貫通孔の内面に設け
られた薄膜にて接続され、各端子用薄膜に出力取出用ワ
イヤーが取付けられていることを特徴とするものであ
る。
(Means for Solving the Problems) According to a thin film temperature sensor element of the present invention for solving the above problems, a thin film thermometer or a thin film thermocouple having thin film leads at both ends is provided on one surface of a substrate. A terminal thin film is provided on the other surface of the substrate at each end of the lead wire or the thin film thermocouple, and a through hole is formed in the substrate so that each terminal thin film and both ends of the thin film lead wire or the thin film thermocouple are formed in the substrate. Are connected by a thin film provided on the inner surface of the terminal, and an output extracting wire is attached to each terminal thin film.

(作用) 上述の如く構成された本発明の薄膜温度センサー素子
は、出力取出用ワイヤーが取付けられている端子用薄膜
が薄膜測温抵抗体又は薄膜熱電対とは反対側の面に設け
られ、薄膜測温抵抗体又は薄膜熱電対はフラットである
ので、被測定物の表面温度を測定する際、薄膜測温抵抗
体又は薄膜熱電対を直接被測定物の表面に密着させるこ
とができる。従って熱応答性が良く、また薄膜測温抵抗
体又は薄膜熱電対の表面が外気にさらされないので、被
測定物の表面温度を正確に測定できる。
(Function) In the thin-film temperature sensor element of the present invention configured as described above, the terminal thin film to which the output wire is attached is provided on the surface opposite to the thin-film thermometer or the thin-film thermocouple, Since the thin-film resistance thermometer or the thin-film thermocouple is flat, the thin-film resistance thermometer or the thin-film thermocouple can be directly adhered to the surface of the measured object when measuring the surface temperature of the measured object. Therefore, the thermal response is good, and the surface of the thin-film resistance temperature detector or the thin-film thermocouple is not exposed to the outside air, so that the surface temperature of the measured object can be accurately measured.

(実施例) 本発明の薄膜温度センサー素子の一実施例を図によっ
て説明する。第1図に示す如く幅20mm、長さ30mm、厚さ
1mmのAlN基板10の一端部に、内径2mmの貫通孔11をレー
ザー加工(超音波加工でも良い)により2個並べて穿設
した。次にこのAlN基板10の一面及び貫通孔11にスパッ
タリングにてPtを0.3μmコーティングした後、パター
ニングを行って第2図に示す如く薄膜リード線12の左端
間に位置させた幅0.1mm、長さ10mmで抵抗値R=100Ωの
薄膜測温抵抗体13を形成した。次いでAlN基板10の他面
の貫通孔11を含む位置にスパッタリングにてPtを1μm
コーティングして幅5mm、長さ8mmの2個の端子用薄膜14
を形成した。然る後各端子用薄膜14に、第4図に示す如
く線径0.5mmの焼鈍上がりのPtより成る出力取出用ワイ
ヤー15をPtペーストにより焼成固定して接続し、薄膜温
度センサー素子16を作った。
(Example) An example of the thin film temperature sensor element of the present invention will be described with reference to the drawings. As shown in Fig. 1, width 20mm, length 30mm, thickness
Two through holes 11 having an inner diameter of 2 mm were formed in one end of a 1 mm AlN substrate 10 by laser processing (or ultrasonic processing). Next, one side of the AlN substrate 10 and the through hole 11 are coated with Pt by 0.3 μm by sputtering, and then patterned to be 0.1 mm wide and 0.1 mm long between the left ends of the thin film lead wires 12 as shown in FIG. A thin-film resistance thermometer 13 having a thickness of 10 mm and a resistance value R = 100Ω was formed. Next, Pt is applied to a position including the through hole 11 on the other surface of the AlN substrate 10 by 1 μm
Coated 5mm wide, 8mm long thin film for two terminals 14
Was formed. Thereafter, as shown in FIG. 4, an output extraction wire 15 made of annealed Pt having a wire diameter of 0.5 mm is connected to each terminal thin film 14 by sintering and fixing with a Pt paste to form a thin film temperature sensor element 16. Was.

こうして作った実施例の薄膜温度センサー素子16は、
薄膜測温抵抗体13がフラットで、出力取出用ワイヤー15
を取付けた端子用薄膜14は反対面にあるので、薄膜測温
抵抗体13を第5図に示す如く被測定物7の表面に直接隙
間無く密着させて表面温度を測定でき、従ってこの温度
測定においては薄膜測温抵抗体13の熱応答性が良く、ま
た薄膜測温抵抗体13の表面が外気にさらされない為、正
確に被測定物の表面温度を測定できた。そして常温から
100℃の範囲内での被測定物7の表面温度の測定におい
て薄膜測温抵抗体13の抵抗値は0.5%以内の誤差を維持
していた。
The thin-film temperature sensor element 16 of the embodiment thus manufactured is
The thin-film resistance thermometer 13 is flat, and the wire 15
Since the terminal thin film 14 on which the terminal is mounted is on the opposite surface, the thin film resistance temperature detector 13 can be directly adhered to the surface of the DUT 7 without any gap as shown in FIG. 5 to measure the surface temperature. In, the thermal response of the thin-film resistance thermometer 13 was good, and the surface of the thin-film resistance thermometer 13 was not exposed to the outside air, so that the surface temperature of the measured object could be measured accurately. And from room temperature
In the measurement of the surface temperature of the DUT 7 within the range of 100 ° C., the resistance value of the thin-film resistance thermometer 13 maintained an error within 0.5%.

尚、上記実施例の薄膜温度センサー素子16の基板10は
AlNより成るが、Al2O3、SiO2等でも良いものである。ま
た基板10の貫通孔11は、グリーンシート状に穴を明け、
焼成しても良い。さらに出力取出用ワイヤー15はPtに限
るものではなく、薄膜温度センサー素子16の使用温度に
よって、Cu、Au等が用いられるものである。
The substrate 10 of the thin film temperature sensor element 16 of the above embodiment is
Although it is made of AlN, Al 2 O 3 , SiO 2 or the like may be used. Also, the through hole 11 of the substrate 10 is perforated in a green sheet shape,
You may bake. Further, the output wire 15 is not limited to Pt, but Cu, Au, or the like is used depending on the operating temperature of the thin-film temperature sensor element 16.

また、上記実施例は被測定物6が絶縁物の場合の例で
あるが、被測定物6が金属等の導電物の場合は、薄膜リ
ード線12及び薄膜測温抵抗体13の表面にAlN、Al2O3、Si
O2等の絶縁薄膜(0.1μm程度)をコーティングしてお
くことにより正確な測温が可能となる。更に、上記実施
例では薄膜測温抵抗体の場合について述べたが、これに
限るものではなく薄膜熱電対の場合についても同様の効
果の得られるものである。
The above embodiment is an example in which the DUT 6 is an insulator. However, when the DUT 6 is a conductive material such as a metal, the surface of the thin-film lead wire 12 and the thin-film resistance thermometer 13 is coated with AlN. , Al 2 O 3 , Si
Precise temperature measurement becomes possible by coating an insulating thin film (about 0.1 μm) such as O 2 . Further, in the above embodiment, the case of the thin-film resistance thermometer has been described. However, the present invention is not limited to this, and similar effects can be obtained in the case of a thin-film thermocouple.

(発明の効果) 以上の説明で判るように本発明の薄膜温度センサー素
子は、薄膜測温抵抗体又は薄膜熱電対がフラットで、出
力取出用ワイヤーが取付けられている端子用薄膜が反対
側の面に設けられているので、被測定物の表面に薄膜測
温抵抗体又は薄膜熱電対を直接密着させることができ
て、熱応答性が良く、また薄膜測温抵抗体又は薄膜熱電
対の表面が外気にさらされず、従って被測定物の表面温
度を正確に測定できる。
(Effects of the Invention) As can be seen from the above description, the thin-film temperature sensor element of the present invention has a flat thin-film resistance thermometer or a thin-film thermocouple, and the thin film for the terminal to which the output wire is attached is on the opposite side. The thin film resistance thermometer or thin film thermocouple can be directly adhered to the surface of the object to be measured because it is provided on the surface. Is not exposed to the outside air, so that the surface temperature of the measured object can be accurately measured.

【図面の簡単な説明】[Brief description of the drawings]

第1図乃至第4図は本発明の薄膜温度センサー素子の一
実施例の製作工程図、第5図は本発明の薄膜温度センサ
ー素子により被測定物の表面温度を測定する状態を示す
図、第6図は従来の薄膜温度センサー素子を示す図、第
7、8図は夫々その薄膜温度センサー素子により被測定
物の表面温度を測定する状態を示す図である。
1 to 4 are manufacturing process diagrams of one embodiment of the thin film temperature sensor element of the present invention, and FIG. 5 is a diagram showing a state in which the surface temperature of an object to be measured is measured by the thin film temperature sensor element of the present invention. FIG. 6 is a diagram showing a conventional thin film temperature sensor element, and FIGS. 7 and 8 are diagrams each showing a state in which the surface temperature of an object to be measured is measured by the thin film temperature sensor element.

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】基板の一面に、両端薄膜リード線付薄膜測
温抵抗体又は薄膜熱電対が設けられ、該薄膜リード線又
は薄膜熱電対の両端部位置にて夫々基板の他面に端子用
薄膜が設けられ、各端子用薄膜と前記薄膜リード線又は
薄膜熱電対の両端部とが基板に穿設せる貫通孔の内面に
設けられた薄膜にて接続され、各端子用薄膜に出力取出
用ワイヤーが取付けられていることを特徴とする薄膜温
度センサー素子。
A thin-film resistance thermometer or a thin-film thermocouple provided with a thin-film lead at both ends is provided on one surface of a substrate, and terminals for connecting terminals to the other surface of the substrate at both ends of the thin-film lead or thin-film thermocouple, respectively. A thin film is provided, and the thin film for each terminal and both ends of the thin film lead wire or the thin film thermocouple are connected by a thin film provided on the inner surface of a through hole formed in the substrate. A thin-film temperature sensor element having a wire attached thereto.
JP20652589A 1989-08-09 1989-08-09 Thin film temperature sensor element Expired - Lifetime JP2645153B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20652589A JP2645153B2 (en) 1989-08-09 1989-08-09 Thin film temperature sensor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20652589A JP2645153B2 (en) 1989-08-09 1989-08-09 Thin film temperature sensor element

Publications (2)

Publication Number Publication Date
JPH0371027A JPH0371027A (en) 1991-03-26
JP2645153B2 true JP2645153B2 (en) 1997-08-25

Family

ID=16524812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20652589A Expired - Lifetime JP2645153B2 (en) 1989-08-09 1989-08-09 Thin film temperature sensor element

Country Status (1)

Country Link
JP (1) JP2645153B2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102013211791A1 (en) * 2013-06-21 2014-12-24 Robert Bosch Gmbh Sensor element with contact surface

Also Published As

Publication number Publication date
JPH0371027A (en) 1991-03-26

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