JPS63260014A - Method of forming silicon carbide single crystal thin film - Google Patents
Method of forming silicon carbide single crystal thin filmInfo
- Publication number
- JPS63260014A JPS63260014A JP7849387A JP7849387A JPS63260014A JP S63260014 A JPS63260014 A JP S63260014A JP 7849387 A JP7849387 A JP 7849387A JP 7849387 A JP7849387 A JP 7849387A JP S63260014 A JPS63260014 A JP S63260014A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- thin film
- sic
- substrate
- melting point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 48
- 239000010409 thin film Substances 0.000 title claims abstract description 39
- 238000000034 method Methods 0.000 title claims abstract description 16
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 48
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000002844 melting Methods 0.000 claims abstract description 19
- 230000008018 melting Effects 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract 9
- 239000010408 film Substances 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract 2
- 238000004519 manufacturing process Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は炭化珪素（ＳｉＣ）単結晶薄膜の選択的形成方
法に関する。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for selectively forming a silicon carbide (SiC) single crystal thin film.
〈従来の技術〉
現在、生産性を考慮した工業的規模での量産に必要とな
る高品質の大面積ＳｉＣ基板を得る方法として、単結晶
シリコン（Ｓｉ）基板上に、気相成長法ＣＣＶＤ法）で
３０形ＳｉＣ単結晶薄膜を形成させる方法がある（特開
昭５９−２０３７９９）。この方法はＳｉ基板結晶上に
ＳｉＣ単結晶を直接成長させないで、まず低温ＣＶＤ法
による成長によって極く薄いＳｉＣ層で基板表面を被覆
し、しかる後にＳｉＣ単結晶を単結晶条件下でＣＶＤ法
により成長させるものである。<Conventional technology> Currently, as a method for obtaining high-quality, large-area SiC substrates required for mass production on an industrial scale in consideration of productivity, vapor phase growth (CCVD) is used on single-crystal silicon (Si) substrates. ) to form a 30-type SiC single crystal thin film (Japanese Patent Laid-Open No. 59-203799). This method does not directly grow a SiC single crystal on a Si substrate crystal, but first coats the substrate surface with an extremely thin SiC layer by growth using low-temperature CVD, and then grows the SiC single crystal by CVD under single-crystal conditions. It is something that grows.
〈発明が解決しようとする問題点〉
上述の技術は、良質で大型の単結晶基板として入手可能
なＳｉ基板上に、結晶構造、不純物濃度。<Problems to be Solved by the Invention> The above-mentioned technology uses a Si substrate, which is available as a high-quality, large-sized single-crystal substrate, to improve the crystal structure and impurity concentration.
寸法、形状等を制御した、大面積で高品質のＳｉＣ単結
晶薄膜を作製することのできるＳｉＣ単結晶基板の製造
方法である。こうして作製したＳｉＣ薄膜にダイオード
、トランジスタ等の半導体素子を形成する際、素子領域
を形成した後〈各素子領域間のＳｉＣ膜をエツチング除
去して素子分離を行ない、半導体装置として完成させる
方法がとられている。ところがこの分離方法では、素子
作製膜であるＳｉＣ単結晶薄膜の一部をエツチング等に
よって除去することによって分離することになり、この
素子間分離面に漏れ電流が生じ、半導体装置としての信
頼性が損われるという問題がある。This is a method for manufacturing a SiC single crystal substrate that can produce a large-area, high-quality SiC single crystal thin film with controlled dimensions, shape, etc. When forming semiconductor elements such as diodes and transistors on the SiC thin film produced in this way, one method is to form the element regions and then remove the SiC film between each element region to separate the elements and complete the semiconductor device. It is being However, in this separation method, a part of the SiC single-crystal thin film, which is the element fabrication film, is removed by etching, etc., resulting in leakage current occurring at the isolation surface between the elements, which reduces the reliability of the semiconductor device. There is a problem of loss.
また、上述のＳｉＣ単結晶薄膜の形成方法を用いても、
Ｓｉ基板と該Ｓｉ基板上に成長させたＳｉＣ単結晶の間
の格子定数の相違に伴う内部応力を完全に除去できず、
素子作製工程にて結晶性に関する問題が生じる。Furthermore, even if the method for forming the SiC single crystal thin film described above is used,
Internal stress due to the difference in lattice constant between the Si substrate and the SiC single crystal grown on the Si substrate cannot be completely removed,
Problems regarding crystallinity arise during the device fabrication process.
く問題点を解決するだめの手段〉
本発明は単結晶シリコン基板上に高融点材料パターンを
形成し、その上にＳｉＣ単結晶薄膜を形成し、その後高
融点材料パターンを剥離して該高融点材料パターン上に
形成されていたＳｉＣ薄膜も同時に除去することにより
、Ｓｉ基板上に選択的にＳｉＣ単結晶薄膜を形成する方
法を提供するものである。Means to Solve the Problem> The present invention forms a high melting point material pattern on a single crystal silicon substrate, forms a SiC single crystal thin film thereon, and then peels off the high melting point material pattern to remove the high melting point material pattern. The present invention provides a method for selectively forming a SiC single crystal thin film on a Si substrate by simultaneously removing the SiC thin film formed on the material pattern.
〈作 用〉
上述の如く、単結晶Ｓｉ基板上に、素子領域となるＳｉ
Ｃ単結晶薄膜のみを形成することにより、ＳｉＣ単結晶
中の内部応力を従来より更に低減できて結晶性のよいＳ
ｉＣ単結晶薄膜を形成できるだけでなく、素子作製後の
素子分離が不要となり、素子の分離も完全で漏れ電流が
発生しなくなる。<Function> As mentioned above, Si is formed on a single-crystal Si substrate to form an element region.
By forming only a C single crystal thin film, the internal stress in the SiC single crystal can be further reduced than before, and S with good crystallinity can be formed.
Not only can an iC single-crystal thin film be formed, but element isolation after element fabrication is no longer necessary, and element isolation is complete and no leakage current occurs.
〈実施例〉
本発明は、単結晶Ｓｉ基板上ＫＳｉＣ単結晶薄膜を成長
させる際、素子形成に必要な領域に選択的にＳｉＣ単結
晶薄膜を成長させ、前記以外の領域にはＳｉＣ単結晶薄
膜を成長させないＳｉＣ単結晶薄膜の形成方法を提供す
るものである。即ち、単結晶Ｓｉ基板上の素子形成に不
要な領域に予め高融点材料パターンを形成し、この部分
的に高融点材料パターンを形成した８１基板上全面知単
結晶成長条件下でＳｉＣ薄膜を形成すると、前記高融点
材料パターン上にはＳｉＣ薄膜は堆積するものの単結晶
とはならず、次いで高融点材料パターンを除去すると、
Ｓｉ基板上には素子形成領域に必要なＳｉＣ単結晶薄膜
が残るというものである。<Example> In the present invention, when growing a KSiC single crystal thin film on a single crystal Si substrate, the SiC single crystal thin film is selectively grown in the region necessary for device formation, and the SiC single crystal thin film is grown in the other regions. The present invention provides a method for forming a SiC single crystal thin film that does not require the growth of SiC single crystal thin films. That is, a high melting point material pattern is formed in advance in areas unnecessary for element formation on a single crystal Si substrate, and a SiC thin film is formed under conditions of full-area single crystal growth on the 81 substrate on which the high melting point material pattern is partially formed. Then, although a SiC thin film is deposited on the high melting point material pattern, it does not become a single crystal, and when the high melting point material pattern is then removed,
A SiC single crystal thin film necessary for the element formation region remains on the Si substrate.
以下、図面を用いて本発明の一実施例を説明するが、本
発明はこれに限定されるものではない。An embodiment of the present invention will be described below with reference to the drawings, but the present invention is not limited thereto.
第１図（ａ）〜（ｄ）は本発明の一実施例の工程を示す
断面図である。即ち、第１図（、）の如く、単結晶Ｓｉ
基板１上忙、酸素雰囲気中、ｌ１００℃で６時間の熱酸
化により、高融点材料である５ｉ０２膜２を形成する。FIGS. 1(a) to 1(d) are cross-sectional views showing the steps of an embodiment of the present invention. That is, as shown in Figure 1 (,), single crystal Si
A 5i02 film 2, which is a high melting point material, is formed on the substrate 1 by thermal oxidation at 100° C. for 6 hours in an oxygen atmosphere.
次に第１図（ｂ）の如く、半導体素子作製領域にある５
ｉ０２膜２を弗化水素酸にて除去し、５ｉ０２パターン
２ａを形成する。Next, as shown in FIG. 1(b), 5
The i02 film 2 is removed with hydrofluoric acid to form a 5i02 pattern 2a.
次いで前記５ｉ０２パターン２ａを有する単結晶Ｓｉ基
板１上に、低温ＣＶＤ法にて極く薄いＳｉＣ層３を形成
し、しかる後にＣＶＤ法にてＳｉＣ薄膜を形成する。こ
の時、第１図（Ｃ）の如く、単結晶Ｓｉ基板■のＳｉＯ
２パターン２ａ被覆領域上にはＳｉＣ多結晶薄膜５が形
成され、単結晶Ｓｉ基板ＩＣｌ５ｉ０２パターン２ａ非
被覆領域上にはＳｉＣ単結晶薄膜４が形成される。最後
に、５ｉ０２パターン２ａを弗化水素酸にて剥離するこ
とにより、同時に５ｉ０２パターン２ａ上の薄いＳｉＣ
層３とＳｉＣ多結晶薄膜５とが除去され、第１図（ｄ）
の如く、単結晶Ｓｉ基板１上にＳｉＣ単結晶薄膜４が選
択的に形成される。Next, an extremely thin SiC layer 3 is formed on the single crystal Si substrate 1 having the 5i02 pattern 2a by low-temperature CVD, and then a thin SiC film is formed by CVD. At this time, as shown in Figure 1 (C), the SiO
A SiC polycrystalline thin film 5 is formed on the area covered by the second pattern 2a, and a SiC single crystalline thin film 4 is formed on the area not covered by the single crystal Si substrate ICl5i02 pattern 2a. Finally, by peeling off the 5i02 pattern 2a with hydrofluoric acid, the thin SiC layer on the 5i02 pattern 2a is removed at the same time.
Layer 3 and SiC polycrystalline thin film 5 are removed, as shown in FIG. 1(d).
A SiC single crystal thin film 4 is selectively formed on a single crystal Si substrate 1 as shown in FIG.
本実施例の如く選択的に成長させたＳｉＣ単結晶と、従
来例を用いて形成したＳｉＣ単結晶とを電子顕微鏡等に
て評価し比較すると、本実施例によるＳｉＣ単結晶の方
がより結晶欠陥の少ない単結晶であることを確認した。When the SiC single crystal grown selectively as in this example and the SiC single crystal formed using the conventional method are evaluated and compared using an electron microscope, it is found that the SiC single crystal according to this example is more crystalline. It was confirmed that it was a single crystal with few defects.
上記本実施例において、単結晶Ｓｉ基板上にＳｉＣ単結
晶薄膜を形成する際、上述の特開昭５９−２０８７９９
号公報の方法にて形成したが、本発明はこれに限定され
るものではなく、単結晶Ｓｉ基板上に、高品質で大面積
のＳｉＣ単結晶を１μｍ以上の厚膜として得られる方法
であれば適用してよい。In the above-mentioned embodiment, when forming a SiC single-crystal thin film on a single-crystal Si substrate,
Although the method described in the publication is used, the present invention is not limited thereto, and any method that can obtain a high-quality, large-area SiC single crystal as a thick film of 1 μm or more on a single-crystal Si substrate can be used. It may be applied if
また１、よ記実施例において、５ｉ０２膜としてその基
板である単結晶Ｓｉの熱酸化膜を用いたが、本発明はこ
れに限定されるものではなく、スパッタ法、ＣＶＤ法等
他の方法で形成した５ｉ０２膜を用いてもよい。In addition, in Example 1, a thermally oxidized film of single crystal Si, which is the substrate, was used as the 5i02 film, but the present invention is not limited to this, and other methods such as sputtering, CVD, etc. The formed 5i02 film may also be used.
更に、上記実施例において、高融点材料とじて５ｉ０２
を用いたが、本発明はこれに限定されるものではなく、
シリコン窒化膜やＷ、Ｍｏ等の高融点金属或いは高融点
シリサイド等ＳｉＣ単結晶と反応性の低い他の高融点材
料を用いてもよい。Furthermore, in the above examples, 5i02 is used as the high melting point material.
was used, but the present invention is not limited to this,
Other high melting point materials having low reactivity with the SiC single crystal, such as a silicon nitride film, a high melting point metal such as W or Mo, or a high melting point silicide, may be used.
〈発明の効果〉
本発明によれば、単結晶Ｓｉ基板の素子領域上に選択的
にＳｉＣ単結晶薄膜を成長させることにより、ＳｉＣ単
結晶薄膜の結晶性が向上するだけでなく各素子間の分離
が完全となり、信頼性の高い半導体素子を供給すること
が可能になる。また、本発明は量産形態に適するため、
ＳｉＣ材料を用いた半導体素子を工業的規模で生産する
ことが可能になる。<Effects of the Invention> According to the present invention, by selectively growing a SiC single crystal thin film on the element region of a single crystal Si substrate, not only the crystallinity of the SiC single crystal thin film is improved but also the Separation is complete, making it possible to supply highly reliable semiconductor elements. Furthermore, since the present invention is suitable for mass production,
It becomes possible to produce semiconductor elements using SiC materials on an industrial scale.
第１図（ａ）〜（ｄ）は本発明の一実施例の工程を示す
断面図である。
ｌ：単結晶Ｓｉ基板、２ ： ５ｉｏ２膜、２ａ：Ｓｉ
Ｏ２パターン、３：薄いＳｉＣ層、４：ＳｉＣ単結晶薄
膜、５：ＳｉＣ多結晶薄膜
代理人 弁理士 杉 山 毅 至（他Ｉ名）第１図FIGS. 1(a) to 1(d) are cross-sectional views showing the steps of an embodiment of the present invention. l: single crystal Si substrate, 2: 5io2 film, 2a: Si
O2 pattern, 3: Thin SiC layer, 4: SiC single crystal thin film, 5: SiC polycrystalline thin film Agent: Patent Attorney Takeshi Sugiyama (and I others) Figure 1
Claims (1)
形成する工程と、該高融点材料パターンを含む単結晶シ
リコン基板上に炭化珪素単結晶薄膜を形成する工程と、
上記高融点材料パターンを剥離する工程とからなり、上
記単結晶シリコン基板上に炭化珪素単結晶を選択的に形
成することを特徴とする炭化珪素単結晶薄膜の形成方法
。 ２）上記高融点材料はシリコン酸化膜或いはシリコン窒
化膜であることを特徴とする特許請求の範囲第１項記載
の炭化珪素単結晶薄膜の形成方法。[Scope of Claims] 1) A step of previously forming a high melting point material pattern on a single crystal silicon substrate, and a step of forming a silicon carbide single crystal thin film on the single crystal silicon substrate including the high melting point material pattern,
A method for forming a silicon carbide single crystal thin film, comprising the step of peeling off the high melting point material pattern, and selectively forming a silicon carbide single crystal on the single crystal silicon substrate. 2) The method for forming a silicon carbide single crystal thin film according to claim 1, wherein the high melting point material is a silicon oxide film or a silicon nitride film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7849387A JPS63260014A (en) | 1986-12-09 | 1987-03-30 | Method of forming silicon carbide single crystal thin film |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61-293668 | 1986-12-09 | ||
| JP29366886 | 1986-12-09 | ||
| JP7849387A JPS63260014A (en) | 1986-12-09 | 1987-03-30 | Method of forming silicon carbide single crystal thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63260014A true JPS63260014A (en) | 1988-10-27 |
Family
ID=26419547
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7849387A Pending JPS63260014A (en) | 1986-12-09 | 1987-03-30 | Method of forming silicon carbide single crystal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63260014A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02172894A (en) * | 1988-12-22 | 1990-07-04 | Nec Corp | Method for selectively growing semiconductor crystal |
| CN102869816A (en) * | 2011-03-22 | 2013-01-09 | 住友电气工业株式会社 | Silicon carbide substrate |
| EP2771903A2 (en) * | 2011-10-26 | 2014-09-03 | Anvil Semiconductors Limited | Silicon carbide epitaxy |
-
1987
- 1987-03-30 JP JP7849387A patent/JPS63260014A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02172894A (en) * | 1988-12-22 | 1990-07-04 | Nec Corp | Method for selectively growing semiconductor crystal |
| CN102869816A (en) * | 2011-03-22 | 2013-01-09 | 住友电气工业株式会社 | Silicon carbide substrate |
| EP2771903A2 (en) * | 2011-10-26 | 2014-09-03 | Anvil Semiconductors Limited | Silicon carbide epitaxy |
| JP2015503215A (en) * | 2011-10-26 | 2015-01-29 | アンヴィル セミコンダクターズ リミテッド | Silicon carbide epitaxial growth method |
| US9520285B2 (en) | 2011-10-26 | 2016-12-13 | Anvil Semiconductors Limited | Silicon carbide epitaxy |
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