JPS63259905A - Dielectric ceramic composition for high frequency - Google Patents
Dielectric ceramic composition for high frequencyInfo
- Publication number
- JPS63259905A JPS63259905A JP61101518A JP10151886A JPS63259905A JP S63259905 A JPS63259905 A JP S63259905A JP 61101518 A JP61101518 A JP 61101518A JP 10151886 A JP10151886 A JP 10151886A JP S63259905 A JPS63259905 A JP S63259905A
- Authority
- JP
- Japan
- Prior art keywords
- composition
- dielectric
- high frequency
- ceramic composition
- dielectric ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims description 21
- 239000000919 ceramic Substances 0.000 title claims description 16
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 1
- 229910052573 porcelain Inorganic materials 0.000 description 9
- 239000000758 substrate Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 6
- 238000005452 bending Methods 0.000 description 6
- 229910052839 forsterite Inorganic materials 0.000 description 4
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産呈上二程里立団
本発明は、高周波用誘電体磁器組成物、特に、マイクロ
波集積回路などのマイクロ波帯域で用いられる回路素子
用基板或いは誘電体共振器用支持台の材料として有用な
高周波用誘電体磁器組成物に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a dielectric ceramic composition for high frequency use, particularly a substrate for a circuit element used in the microwave band such as a microwave integrated circuit, or a support for a dielectric resonator. The present invention relates to a high-frequency dielectric ceramic composition useful as a material for.
従米生侠止
マイクロ波集積回路をはじめとする高周波回路素子では
、誘電体共振器磁器を支持台を介して基板に固定する構
造が採用される場合がある０例えば誘電体共振器制御型
マイクロ波発振器は第２図に示すように誘電体共振器１
を支持台２を介して磁器基板３に取付け、誘電体共振器
１の外部に漏れ出る電磁界Ｈを利用して磁器基板３に設
けたストリップライン４に結合させ、これらを金属ケー
ス５に収容させた構造を有している。この種の高周波回
路素子においては、共振器の電界が支持台を介して漏れ
るのを制御することによって無負荷Ｑの高い共振系が構
成されることになるため、支持台には誘電率が低く誘電
損失（ｔａｎδ）が小さい材料を使用する必要があり、
従来は、例えば、フォルステライトなどで形成していた
。一方、磁器基板については、従来主としてアルミナ磁
器が採用されていた。In high-frequency circuit devices such as microwave integrated circuits, a structure in which a dielectric resonator porcelain is fixed to a substrate via a support is sometimes adopted.For example, dielectric resonator-controlled microwave The oscillator is a dielectric resonator 1 as shown in Figure 2.
is attached to the ceramic substrate 3 via the support stand 2, and is coupled to the strip line 4 provided on the ceramic substrate 3 using the electromagnetic field H leaking to the outside of the dielectric resonator 1, and these are housed in the metal case 5. It has a built-in structure. In this type of high-frequency circuit element, a resonant system with a high no-load Q is constructed by controlling the leakage of the electric field of the resonator through the support, so the support has a low dielectric constant. It is necessary to use a material with low dielectric loss (tan δ),
Conventionally, it has been formed of, for example, forsterite. On the other hand, as for the ceramic substrate, alumina porcelain has conventionally been mainly used.
日が”しようとする５ 占
フォルステライトは６ｒが６．６程度で小さいものの、
Ｑ値は１０ＧＨｚで３０００程度であり、より高いＱ値
の材料が求められている。また磁器基板に主として使用
されているアルミナ磁器は、誘電率が約９．９〜９．５
と比較的高く、抗折強度は３０００ｋｇ／ａｍ”と高い
が、高インピーダンスのストリップラインを形成しよと
すると、ライン幅が小さくなり過ぎて（通常、１μｍ以
下）、断線が生じたり、相対的なライン幅のバラツキが
大きくなり、マイクロ波集積回路の不良率が増大すると
いう問題がある。Although the 6r of Zhan forsterite is small at around 6.6,
The Q value is approximately 3000 at 10 GHz, and materials with higher Q values are being sought. In addition, alumina porcelain, which is mainly used for ceramic substrates, has a dielectric constant of approximately 9.9 to 9.5.
It has a relatively high bending strength of 3000 kg/am", but if you try to form a high impedance strip line, the line width will become too small (usually less than 1 μm), resulting in wire breakage or relative There is a problem in that the variation in line width increases, and the defective rate of microwave integrated circuits increases.
この種の磁器基板におけるストリップラインのインピー
ダンスは、基板の厚さが一定であれば、その誘電率及び
ストリップラインの幅にそれぞれ反比例するため、ライ
ン幅を小さくする代わりに、誘電率の低い基板材料を使
用することによってもインピーダンスを高めることがで
きるが、従来知られている定誘電率のフォルステライト
（比′誘電率６．５）やステアクイト（比誘電率６．０
）は、抗折強度が１５００ｋｇ／ｃｍ”以下とアルミナ
の約半分以下であるため、信顧製に欠けるという問題が
あった。The impedance of a stripline on this type of ceramic board is inversely proportional to its dielectric constant and the width of the stripline if the thickness of the board is constant. Impedance can also be increased by using conventionally known constant permittivity forsterite (relative permittivity 6.5) and stearite (relative permittivity 6.0).
) has a bending strength of 1,500 kg/cm" or less, which is about half that of alumina, and therefore has the problem of lacking in quality.
本出願人は上記問題を解決する一手段として、一般式：
ｘＭｇＯＹＡｌｚＯｘ Ｚ Ｓ １ｏｚ（式中、ｘ
、ｙ、ｚは各成分のモル百分率を表しｚ＋ｙ＋ｚ−１０
０，５５≦ｘ≦９２．１≦ｙ≦１５．７≦ｚ≦４４であ
る）で表され且つ第１図において下記組成の点Ａ、Ｂ、
Ｃ，Ｄを頂点とする多角形ＡＢＣＤで囲まれた範囲内の
組成を有する高周波誘電体Ｍｉ磁器組成物既に提案した
（特願昭６０−１５４７２６号）。As a means of solving the above problem, the applicant proposed the general formula:
xMgOYAlzOx Z S 1oz (in the formula, x
, y, z represent the mole percentage of each component, z+y+z-10
0,55≦x≦92.1≦y≦15.7≦z≦44), and in FIG. 1, points A, B,
A high-frequency dielectric Mi porcelain composition having a composition within the range surrounded by polygon ABCD with vertices C and D has already been proposed (Japanese Patent Application No. 154726/1982).
ｘ ｙ ｚＡ５５
１４４
Ｂ ５５ １５ ３０
Ｃ７８１５７
Ｄ ９２ １ ７
この高周波誘電体磁器組成物は、アルミナよりも比誘電
率が低く、かつ高いＱ値と高い抗折強度を有する優れた
ものであった。x y zA55
144 B 55 15 30 C78157 D 92 1 7 This high frequency dielectric ceramic composition was excellent in that it had a lower dielectric constant than alumina, a high Q value, and a high bending strength.
本発明は上記磁器組成物をベースとし、更にその特性の
改善、特にＱ値の改善を図ることを目的とする。The present invention is based on the above-mentioned porcelain composition, and aims to further improve its properties, particularly its Q value.
。 占を ゛するための
かかる目的を達成するため、本発明の高周波誘電体磁器
組成物は、
一般式：ｘＭｇＯ７Ａ１ｔ０２ ｚｓｉｏ＝（式中、
ｘ、ｙ、ｚは各成分のモル百分率を表しＸ＋ｙ＋ｚ−１
００，５５≦ｘ≦９２．１≦ｙ≦１５．７≦ｚ≦４４で
ある）で表され且つ第１図において下記組成の点Ａ、
Ｂ、 Ｃ，Ｄを頂点とする多角形ＡＢＣＤで囲まれた範
囲内の組成を有する磁器組成物にＬｈＯを０．１〜１０
．０重量％添加したことを要旨とする。. In order to achieve such an objective of determining the power consumption, the high frequency dielectric ceramic composition of the present invention has the general formula: xMgO7A1t02
x, y, z represent the mole percentage of each component
00,55≦x≦92.1≦y≦15.7≦z≦44) and in FIG. 1, point A of the following composition,
Adding 0.1 to 10 LhO to a porcelain composition having a composition within the range surrounded by polygon ABCD with vertices B, C, and D.
．． The gist is that 0% by weight was added.
ｘ ｙ ｚＡ５５
１４４
Ｂ ５５ １５ ３０
Ｃ７８１５７
Ｄ ９２ １ ７詐−
一一服
本発明に係る高周波用磁器組成物を前記組成範囲に限定
したのは、次の理由による。即ち、主成分であるＭｇＯ
のモル百分率が５５％未満では良好な焼結体が得られず
Ｑ値も低い。また９２％を越えると、比誘電率が高くな
るので、ＭｇＯは５５〜９２モル％の範囲とした。また
Ａｚｔｏｔのモル百分率を１〜１５モル％としたのはＡ
ｌ２Ｏ，が１モル％未満ではＱ値が低くなりすぎ、１５
モル％を越えると、比誘電率が高くなると共に、Ｑ値が
低下するので前記範囲とした。５ｔｏｚはそのモル百分
率が７モル％未満ではεｒが大きくなり、４４モル％を
越えるとＱ値が低くなるので前記範囲とした。Ｌｉ！Ｏ
は、その添加量が０．１重量％未満ではＱ値の改善効果
が不充分となり、１０重量％を越えると溶融するので、
０．１−１ｏ重量％の範囲とした。x y zA55
144 B 55 15 30 C78157 D 92 1 7 fraud-
The reason why the high frequency ceramic composition according to the present invention is limited to the above composition range is as follows. That is, the main component MgO
If the molar percentage is less than 55%, a good sintered body cannot be obtained and the Q value is low. Moreover, if it exceeds 92%, the dielectric constant becomes high, so the MgO content was set in the range of 55 to 92 mol%. Also, the mole percentage of Aztot was set to 1 to 15 mol% because A
If l2O, is less than 1 mol%, the Q value will be too low, and 15
If it exceeds mol %, the dielectric constant will increase and the Q value will decrease, so it was set in the above range. When the molar percentage of 5toz is less than 7 mol %, εr becomes large, and when it exceeds 44 mol %, the Q value becomes low, so it was set in the above range. Li! O
If the amount added is less than 0.1% by weight, the Q value improvement effect will be insufficient, and if it exceeds 10% by weight, it will melt.
The range was 0.1-10% by weight.
叉−崖一斑 以下、本発明の実施例について説明する。A patch of cliff Examples of the present invention will be described below.
原料として、ＭｇＯ１ＡｎＺＯ３、ＳｉＯ，、Ｌｉｃｏ
、を用い、これらを第１表に示す割合の磁器が得られる
ように秤量し、２時間湿式混合した後、脱水、乾燥し、
この混合物を１１００℃で２時間仮焼した後、粉砕した
。得られた粉末に適量のバインダを加えて造粒し、これ
を２０００ｋｇ／ｃｍ”の圧力の下で形成して直径１８
ｍｍ、厚さ７ｍｍの成形体を得た。この成形体を空気中
、１４００〜１５５０℃で３時間焼成して誘電体磁器試
料を得た。As raw materials, MgO1AnZO3, SiO, Lico
, and weighed to obtain porcelain in the proportions shown in Table 1, wet mixed for 2 hours, dehydrated and dried,
This mixture was calcined at 1100° C. for 2 hours and then pulverized. An appropriate amount of binder is added to the obtained powder and granulated, and this is formed under a pressure of 2000 kg/cm'' to a diameter of 18 mm.
A molded article with a thickness of 7 mm and a thickness of 7 mm was obtained. This molded body was fired in air at 1400 to 1550°C for 3 hours to obtain a dielectric ceramic sample.
各磁器試料の１０ＧＨｚにおける誘電特性を誘電体共振
器法で測定すると共に、３点支持法により抗折強度を測
定した。その結果を第１表に示す。The dielectric properties of each ceramic sample at 10 GHz were measured using a dielectric resonator method, and the bending strength was measured using a three-point support method. The results are shown in Table 1.
（以下余白）
裏−」−一人
第１表中、本印を付した試料は本発明の範囲外のもので
あり、他のものは本発明の範囲内のものである。この結
果から、本発明に係る高周波用誘電体磁器組成物は、比
誘電率（εｒ）が６．３〜８．４と低く、また抗折強度
も２０００〜２５００ｋｇ／Ｃｍ”とアルミナに近い値
を示すことが判る。しかもＱ値が１０ＧＨｚで４８００
〜２１３００と高く、特に試料番号６と試料番号７．８
とを比較すれば、Ｌｉ、Ｏを添加することによるＱ値の
改善効果が顕著であることが判る。(Hereinafter, blank space) Back - 1 person In Table 1, the samples marked with this mark are outside the scope of the present invention, and the others are within the scope of the present invention. From this result, the dielectric ceramic composition for high frequency according to the present invention has a low relative dielectric constant (εr) of 6.3 to 8.4, and a bending strength of 2000 to 2500 kg/Cm'', which is close to that of alumina. It can be seen that the Q value is 4800 at 10 GHz.
~21300, especially sample number 6 and sample number 7.8
It can be seen that the Q value is significantly improved by adding Li and O.
衾更！肱来
以上の説明から明らかなように、本発明によれば、Ｌｉ
、Ｏ添加によるＱ値の改善が顕著で、極めて高いＱ値と
アルミナに近い抗折強度を有し、且つフォルステライト
やステアタイトに匹敵する低誘電率を有する磁器が得ら
れ、従って、高インピーダンスのマイクロ波集積回路な
ど高周波回路素子を信頼製を損なうことなく製造するこ
とができるなど、優れた効果が得られる。Back to school! As is clear from the above explanation, according to the present invention, Li
, the Q value is significantly improved by adding O, and a porcelain with an extremely high Q value, a bending strength close to that of alumina, and a low dielectric constant comparable to forsterite and steatite is obtained, and therefore has a high impedance. Excellent effects can be obtained, such as the ability to manufacture high-frequency circuit elements such as microwave integrated circuits without sacrificing reliability.
第１図は本発明に係る高周波用誘電体磁器組成物の組成
範囲を示す三元組成図、第２図は高周波用回路素子の一
例を示す誘電体共振器制御型マイクロ波発振器の概略断
面図である。
ｌ・・・誘電体共振器、 ２・・・支持台、３・・・
磁器基板、 ４・・・ストリップライン、５・
・・金属ケース。FIG. 1 is a ternary composition diagram showing the composition range of the high-frequency dielectric ceramic composition according to the present invention, and FIG. 2 is a schematic cross-sectional view of a dielectric resonator-controlled microwave oscillator showing an example of a high-frequency circuit element. It is. l...dielectric resonator, 2...support stand, 3...
Porcelain substrate, 4... Strip line, 5...
...Metal case.
Claims (1)
＿２（式中、ｘ、ｙ、ｚは各成分のモル百分率を表しｘ
＋ｙ＋ｚ＝１００、５５≦ｘ≦９２、１≦ｙ≦１５、７
≦ｚ≦４４である）で表され且つ第１図において下記組
成の点Ａ、Ｂ、Ｃ、Ｄを頂点とする多角形ＡＢＣＤで囲
まれた範囲内の組成を有する磁器組成物にＬｉ＿２Ｏを
０．１〜１０．０重量％添加したことを特徴とする高周
波用誘電体磁器組成物。 ▲数式、化学式、表等があります▼(1) General formula: xMgO-yAl_2O_3-zSiO
_2 (in the formula, x, y, z represent the mole percentage of each component x
+y+z=100, 55≦x≦92, 1≦y≦15, 7
≦z≦44) and has a composition within the range surrounded by polygon ABCD with points A, B, C, and D of the following composition as vertices in FIG. A dielectric ceramic composition for high frequency use, characterized in that it is added in an amount of .1 to 10.0% by weight. ▲Contains mathematical formulas, chemical formulas, tables, etc.▼
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61101518A JPH06103603B2 (en) | 1986-04-30 | 1986-04-30 | High frequency dielectric ceramic composition |
| DE19863623152 DE3623152A1 (en) | 1985-07-13 | 1986-07-10 | DIELECTRIC CERAMIC COMPOSITION FOR HIGH FREQUENCIES |
| FR868610230A FR2584708B1 (en) | 1985-07-13 | 1986-07-11 | HIGH FREQUENCY DIELECTRIC CERAMIC COMPOSITION |
| US07/025,508 US4792537A (en) | 1985-07-13 | 1987-03-13 | Dielectric ceramic composition for high frequencies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61101518A JPH06103603B2 (en) | 1986-04-30 | 1986-04-30 | High frequency dielectric ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63259905A true JPS63259905A (en) | 1988-10-27 |
| JPH06103603B2 JPH06103603B2 (en) | 1994-12-14 |
Family
ID=14302738
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61101518A Expired - Lifetime JPH06103603B2 (en) | 1985-07-13 | 1986-04-30 | High frequency dielectric ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH06103603B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5923049A (en) * | 1982-07-27 | 1984-02-06 | Mitsui Eng & Shipbuild Co Ltd | Automatic output controller for exhaust-gas turbo generator |
| JPS5946900A (en) * | 1982-09-10 | 1984-03-16 | 株式会社荏原製作所 | Method of burning radioactive waste |
| JPS6144757A (en) * | 1984-08-08 | 1986-03-04 | 太陽誘電株式会社 | Alumina ceramic composition |
-
1986
- 1986-04-30 JP JP61101518A patent/JPH06103603B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5923049A (en) * | 1982-07-27 | 1984-02-06 | Mitsui Eng & Shipbuild Co Ltd | Automatic output controller for exhaust-gas turbo generator |
| JPS5946900A (en) * | 1982-09-10 | 1984-03-16 | 株式会社荏原製作所 | Method of burning radioactive waste |
| JPS6144757A (en) * | 1984-08-08 | 1986-03-04 | 太陽誘電株式会社 | Alumina ceramic composition |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06103603B2 (en) | 1994-12-14 |
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