JP3446249B2 - High frequency dielectric ceramic composition - Google Patents
High frequency dielectric ceramic compositionInfo
- Publication number
- JP3446249B2 JP3446249B2 JP14269393A JP14269393A JP3446249B2 JP 3446249 B2 JP3446249 B2 JP 3446249B2 JP 14269393 A JP14269393 A JP 14269393A JP 14269393 A JP14269393 A JP 14269393A JP 3446249 B2 JP3446249 B2 JP 3446249B2
- Authority
- JP
- Japan
- Prior art keywords
- source
- high frequency
- dielectric ceramic
- ceramic composition
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Description
【発明の詳細な説明】
【０００１】
【産業上の利用分野】この発明は、誘電体磁器組成物に
関し、特に、マイクロ波集積回路などのマイクロ波帯で
用いられる回路素子用基板（磁器基板）、あるいは誘電
体共振器用支持台用の材料として有用な高周波用誘電体
磁器組成物に関する。
【０００２】
【従来の技術】マイクロ波集積回路をはじめとする高周
波回路素子には、誘電体共振器を、支持台を介して基板
（磁器基板）に固定する構造が採用される場合がある
が、この場合、支持台には誘電率が低く、誘電損失（ta
nδ）が小さい材料を使用する必要がある。そのため、
従来は、上記支持台用の材料として、例えば、フォルス
テライトなどが使用されており、また、磁器基板用の材
料として、例えばアルミナ磁器などが使用されている。
【０００３】
【発明が解決しようとする課題】しかし、上記フォルス
テライトは、比誘電率（εr）が６．５程度と小さいも
のの、低温で焼結することが困難であり、純粋なフォル
ステライトは１５００℃の高温焼成でも完全に焼結せ
ず、工業的に大量生産するには適していないという問題
点がある。
【０００４】そこで、従来は、低温での焼結を可能にす
るために、低温焼成剤として粘土などを添加している
が、これらの低温焼成剤の添加により、Ｑ値が１０ＧＨ
ｚで３０００程度にまで低下するという問題点がある。
【０００５】そのため、より高周波での用途が増大する
につれて、さらにＱ値の高い材料への要求が増大するに
至っている。
【０００６】この発明は、上記問題点を解決するもので
あり、低温で焼結することが可能で、かつ、高いＱ値と
低い誘電率を有する高周波用誘電体磁器組成物を提供す
ることを目的とする。
【０００７】
【課題を解決するための手段】上記目的を達成するため
に、この発明の高周波用誘電体磁器組成物は、一般式：
ｘＭｇＯ−ｙＳｉＯ2（但し、式中のｘ，ｙは、各成分
の重量百分率を表し、４０≦ｘ≦８５，１５≦ｙ≦６
０，ｘ＋ｙ＝１００である）で表される組成を有する磁
器組成物に、焼結することによりバリウム酸化物となる
物質（Ｂａ源）及び焼結することによりストロンチウム
酸化物となる物質（Ｓｒ源）の一方または両方を、それ
ぞれＢａＣＯ3またはＳｒＣＯ3に換算して、その合量が
０．３〜３．０重量％になるような割合で添加したこと
を特徴としている。
【０００８】この発明の高周波用誘電体磁器組成物にお
いては、Ｂａ源はＢａＣＯ3に換算して、また、Ｓｒ源
はＳｒＣＯ3に換算して、その合計量が０．３〜３．０
重量％となるような割合で添加されるが、Ｂａ源及びＳ
ｒ源は、そのいずれか一方のみが添加されてもよく、ま
た、その両方が添加されてもよい。
【０００９】また、Ｂａ源及びＳｒ源としては、ＢａＣ
Ｏ3，ＳｒＣＯ3などを代表的な例として挙げることがで
きるが、焼結することによりバリウム酸化物（ＢａＯな
ど），ストロンチウム酸化物（ＳｒＯなど）になる種々
の物質のうちから、任意の物質を選択して用いることが
可能である。
【００１０】
【実施例】以下、この発明の実施例を比較例とともに示
して、発明の特徴をさらに詳しく説明する。
【００１１】まず、原料として、ＭｇＯ，ＳｉＯ2，Ｂ
ａＣＯ3，及びＳｒＣＯ3を用い、これらを、表１に示す
割合の組成が得られるように秤量、配合した。
【００１２】
【表１】【００１３】次に、この配合原料を１６時間湿式混合し
た後、蒸発乾燥した。それから、この混合物を１１００
℃で２時間仮焼した後、粉砕した。
【００１４】そして、得られた仮焼粉末に適量のバイン
ダを添加して造粒し、これを２０００kg／cm2の圧力の
下で成形して、直径２２mm、厚さ１１mmの成形体を得
た。
【００１５】それから、この成形体を空気中１３５０〜
１４００℃で４時間焼結して、誘電体磁器（試料）を得
た。
【００１６】このようにして得た試料について、１０Ｇ
Ｈｚにおける誘電特性を誘電体共振器法により測定し
た。その結果を表１に示す。
【００１７】なお、表１において、試料番号に＊印を付
したものは、この発明の範囲外の比較例であり、その他
のものは、この発明の範囲内の実施例である。
【００１８】この発明の範囲内の誘電体磁器組成物は、
上述のように、１３５０〜１４００℃の低温で焼結する
ことが可能であり、得られた焼結体（誘電体磁器）は、
表１に示すように、比誘電率（εr）が約６〜８と低
く、Ｑ値は１０ＧＨｚにおいて３４００〜７０００と高
い。すなわち、この発明の実施例にかかる誘電体磁器
は、低温で焼結したにもかかわらず、比誘電率εr 及び
高周波領域（１０ＧＨｚ）におけるＱ値について良好な
結果が得られていることがわかる。
【００１９】次に、この発明の高周波用誘電体磁器組成
物において、その組成範囲を限定した理由について説明
する。
【００２０】［ＭｇＯ，ＳｉＯ2の割合］
主成分であるＭｇＯの含有率（重量百分率）が４０％
（すなわち、一般式：ｘＭｇＯ−ｙＳｉＯ2におけるｘ
の値が４０）未満の場合には良好な焼結体を得ることが
できず、しかもＱ値が低下する。また、ＭｇＯの含有率
が８５％（すなわち、ｘの値が８５）を越えると比誘電
率が高くなりすぎる傾向がある。したがって、ＭｇＯの
含有率は４０〜８５％（ｘ＝４０〜８５）の範囲にある
ことが好ましい。また、ｘＭｇＯ−ｙＳｉＯ2の残部を
構成するＳｉＯ2の含有率は１５〜６０％（すなわち、
Ｙ＝１５〜６０）の範囲に有ることが好ましい。
【００２１】［Ｂａ源（ＢａＣＯ3），Ｓｒ源（ＳｒＣ
Ｏ3）の割合］
ＢａＣＯ3などのＢａ源、及びＳｒＣＯ3などのＳｒ源の
添加量については、例えば、Ｂａ源及びＳｒ源の一方ま
たは両方を、それぞれＢａＣＯ3またはＳｒＣＯ3に換算
して、その合量が０．３重量％未満になるような割合で
添加した場合には低温（１３５０〜１４００℃）で焼結
させることが困難になり、また、その合量が３．０重量
％を越えるような割合で添加した場合にはＱ値が低下す
る。したがって、Ｂａ源及びＳｒ源の添加量は、それぞ
れをＢａＣＯ3及びＳｒＣＯ3に換算し場合の合量が０．
３〜３．０重量％の範囲になるような割合であることが
好ましい。
【００２２】
【発明の効果】上述のように、この発明の高周波用誘電
体磁器組成物は、一般式：ｘＭｇＯ−ｙＳｉＯ2（但
し、式中のｘ，ｙは、各成分の重量百分率を表し、４０
≦ｘ≦８５，１５≦ｙ≦６０，ｘ＋ｙ＝１００である）
で表される組成を有する磁器組成物に、焼結することに
よりバリウム酸化物となる物質（Ｂａ源）及び焼結する
ことによりストロンチウム酸化物となる物質（Ｓｒ源）
の一方または両方を、それぞれＢａＣＯ3またはＳｒＣ
Ｏ3に換算して、その合量が０．３〜３．０重量％にな
るような割合で添加するようにしているので、これらの
添加物により、Ｑ値を向上させるとともに、焼結性を改
善することが可能になる。
【００２３】すなわち、この発明の高周波用誘電体磁器
組成物を用いることにより、マイクロ波領域などの高周
波帯域において高いＱ値を有するとともに、フォルステ
ライトやステアタイトに匹敵する低誘電率を有する高周
波用誘電体磁器を得ることが可能になる。しかも、低温
で焼結することが可能であるため、低コストで、工業的
に大量生産することが可能になる。Description: BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition, and more particularly, to a circuit element substrate (porcelain substrate) used in a microwave band such as a microwave integrated circuit. Or a high frequency dielectric ceramic composition useful as a material for a support for a dielectric resonator. 2. Description of the Related Art In some cases, a high frequency circuit element such as a microwave integrated circuit employs a structure in which a dielectric resonator is fixed to a substrate (porcelain substrate) via a support. In this case, the support has a low dielectric constant and a dielectric loss (ta
It is necessary to use a material having a small nδ). for that reason,
Conventionally, for example, forsterite or the like has been used as a material for the support, and for example, alumina porcelain or the like has been used as a material for a porcelain substrate. [0003] However, although the above forsterite has a small relative dielectric constant (ε r ) of about 6.5, it is difficult to sinter at a low temperature, and pure forsterite is difficult to obtain. Is not completely sintered even at a high temperature of 1500 ° C., and is not suitable for mass production on an industrial scale. Therefore, conventionally, clay or the like has been added as a low-temperature sintering agent to enable sintering at a low temperature. However, the addition of these low-temperature sintering agents results in a Q value of 10 GH.
There is a problem in that z decreases to about 3000. [0005] Therefore, as the use at higher frequencies increases, the demand for a material having a higher Q value has been increasing. The present invention has been made to solve the above problems, and an object of the present invention is to provide a high-frequency dielectric ceramic composition which can be sintered at a low temperature and has a high Q value and a low dielectric constant. Aim. In order to achieve the above object, a high frequency dielectric ceramic composition of the present invention has a general formula:
xMgO-ySiO 2 (where x and y in the formula represent weight percentage of each component, and 40 ≦ x ≦ 85, 15 ≦ y ≦ 6
0, x + y = 100) to a porcelain composition having a composition represented by the following formula (Ba source) by sintering and a strontium oxide by sintering (Sr source) ) Is added in such a ratio that the total amount becomes 0.3 to 3.0% by weight in terms of BaCO 3 or SrCO 3 , respectively. In the high frequency dielectric ceramic composition of the present invention, the Ba source is converted into BaCO 3 , and the Sr source is converted into SrCO 3 , and the total amount is 0.3 to 3.0.
% By weight, but the Ba source and S
Only one of the r sources may be added, or both of them may be added. The Ba source and the Sr source include BaC
O 3 , SrCO 3 and the like can be mentioned as typical examples. Among various materials which become barium oxide (such as BaO) and strontium oxide (such as SrO) by sintering, any material can be used. Can be selected and used. Hereinafter, the features of the present invention will be described in more detail with reference to examples of the present invention and comparative examples. First, as raw materials, MgO, SiO 2 , B
Using aCO 3 and SrCO 3 , these were weighed and blended so as to obtain the compositions shown in Table 1. [Table 1] Next, the blended raw materials were wet-mixed for 16 hours and then evaporated to dryness. The mixture is then added to 1100
After calcination at 2 ° C. for 2 hours, the mixture was ground. Then, an appropriate amount of a binder was added to the obtained calcined powder, and the mixture was granulated and molded under a pressure of 2000 kg / cm 2 to obtain a molded body having a diameter of 22 mm and a thickness of 11 mm. . [0015] Then, the molded body is placed in air at 1350 to
Sintering was performed at 1400 ° C. for 4 hours to obtain a dielectric porcelain (sample). The sample obtained in this way has a capacity of 10 G
The dielectric characteristics at Hz were measured by the dielectric resonator method. Table 1 shows the results. In Table 1, samples marked with an asterisk (*) are comparative examples outside the scope of the present invention, and the others are examples within the scope of the present invention. The dielectric porcelain composition within the scope of the present invention comprises:
As described above, it is possible to perform sintering at a low temperature of 1350 to 1400 ° C., and the obtained sintered body (dielectric porcelain)
As shown in Table 1, the relative dielectric constant (ε r ) is as low as about 6 to 8, and the Q value is as high as 3400 to 7000 at 10 GHz. That is, a dielectric ceramic according to an embodiment of the invention, it can be seen that despite the low temperature sintering, good results for Q value of the dielectric constant epsilon r and a high frequency region (10 GHz) is obtained . Next, the reason why the composition range of the high frequency dielectric ceramic composition of the present invention is limited will be described. [Ratio of MgO and SiO 2 ] The content (weight percentage) of MgO as a main component is 40%.
(That is, x in the general formula: xMgO-ySiO 2
Is less than 40), a good sintered body cannot be obtained, and the Q value decreases. If the content of MgO exceeds 85% (that is, the value of x is 85), the specific permittivity tends to be too high. Therefore, the MgO content is preferably in the range of 40 to 85% (x = 40 to 85). Further, the content of SiO 2 constituting the balance of xMgO-ySiO 2 is 15 to 60% (that is,
Y = 15 to 60). [Ba source (BaCO 3 ), Sr source (SrC
O 3 )] For the addition amounts of the Ba source such as BaCO 3 and the Sr source such as SrCO 3 , for example, one or both of the Ba source and the Sr source are converted into BaCO 3 or SrCO 3 respectively. If the total amount is less than 0.3% by weight, sintering at a low temperature (1350 to 1400 ° C.) becomes difficult, and the total amount is 3.0% by weight. When added in such a ratio as to exceed the value, the Q value decreases. Therefore, when the amounts of the Ba source and the Sr source are converted to BaCO 3 and SrCO 3 , respectively, the total amount of the Ba source and the Sr source is 0.
It is preferable that the ratio be in the range of 3 to 3.0% by weight. As described above, the high frequency dielectric ceramic composition of the present invention has a general formula: xMgO-ySiO 2 (where x and y in the formula represent weight percentages of each component). , 40
≦ x ≦ 85, 15 ≦ y ≦ 60, x + y = 100)
A material that becomes a barium oxide by sintering (Ba source) and a material that becomes a strontium oxide by sintering (Sr source)
One or both of BaCO 3 or SrC
Since it is added in such a ratio that the total amount becomes 0.3 to 3.0% by weight in terms of O 3 , the Q value is improved by these additives, and the sinterability is improved. Can be improved. That is, by using the high frequency dielectric ceramic composition of the present invention, a high frequency value having a high Q value in a high frequency band such as a microwave region and a low dielectric constant comparable to forsterite or steatite can be obtained. It becomes possible to obtain a dielectric porcelain. In addition, since sintering can be performed at a low temperature, mass production can be performed industrially at low cost.
───────────────────────────────────────────────────── フロントページの続き (58)調査した分野(Int.Cl.7，ＤＢ名) H01B 3/12 333 H01B 3/12 336 C04B 35/20 H01P 7/10 ──────────────────────────────────────────────────続 き Continued on the front page (58) Field surveyed (Int.Cl. 7 , DB name) H01B 3/12 333 H01B 3/12 336 C04B 35/20 H01P 7/10
Claims (1)
式中のｘ，ｙは、各成分の重量百分率を表し、４０≦ｘ
≦８５，１５≦ｙ≦６０，ｘ＋ｙ＝１００である）で表
される組成を有する磁器組成物に、焼結することにより
バリウム酸化物となる物質（Ｂａ源）及び焼結すること
によりストロンチウム酸化物となる物質（Ｓｒ源）の一
方または両方を、それぞれＢａＣＯ3またはＳｒＣＯ3に
換算して、その合量が０．３〜３．０重量％になるよう
な割合で添加したことを特徴とする高周波用誘電体磁器
組成物。(57) [Claims 1] A general formula: xMgO-ySiO 2 (provided that
X and y in the formula represent weight percentage of each component, and 40 ≦ x
≦ 85, 15 ≦ y ≦ 60, x + y = 100) A porcelain composition having a composition represented by the following formula (Ba source) and strontium oxide by sintering: One or both of the substance (Sr source) to be converted into BaCO 3 or SrCO 3 , respectively, at a ratio such that the total amount becomes 0.3 to 3.0% by weight. High frequency dielectric ceramic composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14269393A JP3446249B2 (en) | 1993-05-21 | 1993-05-21 | High frequency dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14269393A JP3446249B2 (en) | 1993-05-21 | 1993-05-21 | High frequency dielectric ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06333429A JPH06333429A (en) | 1994-12-02 |
| JP3446249B2 true JP3446249B2 (en) | 2003-09-16 |
Family
ID=15321342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14269393A Expired - Lifetime JP3446249B2 (en) | 1993-05-21 | 1993-05-21 | High frequency dielectric ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3446249B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006347782A (en) * | 2005-06-13 | 2006-12-28 | Murata Mfg Co Ltd | Dielectric ceramic composition and laminated ceramic capacitor |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6602623B1 (en) | 1999-10-27 | 2003-08-05 | Ngk Spark Plug Co., Ltd. | Low-temperature firing ceramic composition, process for producing same and wiring substrate prepared by using same |
| JP4202117B2 (en) * | 2002-12-27 | 2008-12-24 | ニッコー株式会社 | Low-frequency fired porcelain composition for high frequency and manufacturing method thereof |
| WO2005058774A1 (en) | 2003-12-18 | 2005-06-30 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition and multilayer electronic component |
| JP5170522B2 (en) * | 2007-02-22 | 2013-03-27 | Ｔｄｋ株式会社 | Dielectric porcelain composition |
| JP2009274892A (en) * | 2008-05-13 | 2009-11-26 | Murata Mfg Co Ltd | Dielectric ceramic composition for high frequency, and dielectric component |
-
1993
- 1993-05-21 JP JP14269393A patent/JP3446249B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006347782A (en) * | 2005-06-13 | 2006-12-28 | Murata Mfg Co Ltd | Dielectric ceramic composition and laminated ceramic capacitor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06333429A (en) | 1994-12-02 |
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