JPH06333429A - Dielectric porcelain composition for high frequency - Google Patents
Dielectric porcelain composition for high frequencyInfo
- Publication number
- JPH06333429A JPH06333429A JP14269393A JP14269393A JPH06333429A JP H06333429 A JPH06333429 A JP H06333429A JP 14269393 A JP14269393 A JP 14269393A JP 14269393 A JP14269393 A JP 14269393A JP H06333429 A JPH06333429 A JP H06333429A
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- source
- high frequency
- composition
- sintering
- porcelain composition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
- Control Of Motors That Do Not Use Commutators (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明は、誘電体磁器組成物に
関し、特に、マイクロ波集積回路などのマイクロ波帯で
用いられる回路素子用基板（磁器基板）、あるいは誘電
体共振器用支持台用の材料として有用な高周波用誘電体
磁器組成物に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a dielectric ceramic composition, and more particularly to a circuit element substrate (porcelain substrate) used in a microwave band of a microwave integrated circuit or a dielectric resonator support base. The present invention relates to a high frequency dielectric ceramic composition useful as a material.
【０００２】[0002]
【従来の技術】マイクロ波集積回路をはじめとする高周
波回路素子には、誘電体共振器を、支持台を介して基板
（磁器基板）に固定する構造が採用される場合がある
が、この場合、支持台には誘電率が低く、誘電損失（ta
nδ）が小さい材料を使用する必要がある。そのため、
従来は、上記支持台用の材料として、例えば、フォルス
テライトなどが使用されており、また、磁器基板用の材
料として、例えばアルミナ磁器などが使用されている。2. Description of the Related Art A high-frequency circuit element such as a microwave integrated circuit may employ a structure in which a dielectric resonator is fixed to a substrate (porcelain substrate) via a supporting base. , The support has a low dielectric constant, and the dielectric loss (ta
It is necessary to use a material with a small nδ). for that reason,
Conventionally, for example, forsterite or the like has been used as the material for the support, and alumina porcelain or the like has been used as the material for the porcelain substrate.
【０００３】[0003]
【発明が解決しようとする課題】しかし、上記フォルス
テライトは、比誘電率（εr）が６．５程度と小さいも
のの、低温で焼結することが困難であり、純粋なフォル
ステライトは１５００℃の高温焼成でも完全に焼結せ
ず、工業的に大量生産するには適していないという問題
点がある。However, although the above-mentioned forsterite has a small relative permittivity (ε r ) of about 6.5, it is difficult to sinter at low temperature, and pure forsterite is 1500 ° C. However, it does not completely sinter even when it is fired at a high temperature and is not suitable for industrial mass production.
【０００４】そこで、従来は、低温での焼結を可能にす
るために、低温焼成剤として粘土などを添加している
が、これらの低温焼成剤の添加により、Ｑ値が１０ＧＨ
ｚで３０００程度にまで低下するという問題点がある。Therefore, conventionally, clay or the like has been added as a low-temperature firing agent in order to enable sintering at a low temperature, but the addition of these low-temperature firing agents results in a Q value of 10 GH.
There is a problem that z is reduced to about 3000.
【０００５】そのため、より高周波での用途が増大する
につれて、さらにＱ値の高い材料への要求が増大するに
至っている。Therefore, as the use at higher frequencies has increased, the demand for materials having a higher Q value has also increased.
【０００６】この発明は、上記問題点を解決するもので
あり、低温で焼結することが可能で、かつ、高いＱ値と
低い誘電率を有する高周波用誘電体磁器組成物を提供す
ることを目的とする。The present invention solves the above problems and provides a high frequency dielectric ceramic composition which can be sintered at a low temperature and has a high Q value and a low dielectric constant. To aim.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成するため
に、この発明の高周波用誘電体磁器組成物は、一般式：
ｘＭｇＯ−ｙＳｉＯ2（但し、式中のｘ，ｙは、各成分
の重量百分率を表し、４０≦ｘ≦８５，１５≦ｙ≦６
０，ｘ＋ｙ＝１００である）で表される組成を有する磁
器組成物に、焼結することによりバリウム酸化物となる
物質（Ｂａ源）及び焼結することによりストロンチウム
酸化物となる物質（Ｓｒ源）の一方または両方を、それ
ぞれＢａＣＯ3またはＳｒＣＯ3に換算して、その合量が
０．３〜３．０重量％になるような割合で添加したこと
を特徴としている。In order to achieve the above object, the high frequency dielectric ceramic composition of the present invention has the general formula:
xMgO-ySiO 2 (where x and y in the formula represent the weight percentage of each component, and 40 ≦ x ≦ 85, 15 ≦ y ≦ 6
0, x + y = 100), a substance that becomes a barium oxide by sintering (Ba source) and a substance that becomes a strontium oxide by sintering (Sr source) 1) or both of them are converted to BaCO 3 or SrCO 3 , respectively, and added in a ratio such that the total amount becomes 0.3 to 3.0% by weight.
【０００８】この発明の高周波用誘電体磁器組成物にお
いては、Ｂａ源はＢａＣＯ3に換算して、また、Ｓｒ源
はＳｒＣＯ3に換算して、その合計量が０．３〜３．０
重量％となるような割合で添加されるが、Ｂａ源及びＳ
ｒ源は、そのいずれか一方のみが添加されてもよく、ま
た、その両方が添加されてもよい。In the high frequency dielectric ceramic composition of the present invention, the Ba source is converted to BaCO 3 and the Sr source is converted to SrCO 3 , and the total amount is 0.3 to 3.0.
The Ba source and S
Only one of the r sources may be added, or both of them may be added.
【０００９】また、Ｂａ源及びＳｒ源としては、ＢａＣ
Ｏ3，ＳｒＣＯ3などを代表的な例として挙げることがで
きるが、焼結することによりバリウム酸化物（ＢａＯな
ど），ストロンチウム酸化物（ＳｒＯなど）になる種々
の物質のうちから、任意の物質を選択して用いることが
可能である。Ba source and Sr source are BaC.
O 3 and SrCO 3 can be mentioned as typical examples, but any substance can be selected from various substances which become barium oxide (BaO etc.) and strontium oxide (SrO etc.) by sintering. Can be selected and used.
【００１０】[0010]
【実施例】以下、この発明の実施例を比較例とともに示
して、発明の特徴をさらに詳しく説明する。EXAMPLES Hereinafter, the features of the present invention will be described in more detail by showing examples of the present invention together with comparative examples.
【００１１】まず、原料として、ＭｇＯ，ＳｉＯ2，Ｂ
ａＣＯ3，及びＳｒＣＯ3を用い、これらを、表１に示す
割合の組成が得られるように秤量、配合した。First, as raw materials, MgO, SiO 2 , B
ACO 3 and SrCO 3 were used, and they were weighed and blended so that the composition in the ratio shown in Table 1 was obtained.
【００１２】[0012]
【表１】 [Table 1]
【００１３】次に、この配合原料を１６時間湿式混合し
た後、蒸発乾燥した。それから、この混合物を１１００
℃で２時間仮焼した後、粉砕した。Next, the blended raw materials were wet mixed for 16 hours and then evaporated to dryness. Then 1100 this mixture
It was calcined at ℃ for 2 hours and then pulverized.
【００１４】そして、得られた仮焼粉末に適量のバイン
ダを添加して造粒し、これを２０００kg／cm2の圧力の
下で成形して、直径２２mm、厚さ１１mmの成形体を得
た。Then, an appropriate amount of a binder was added to the obtained calcined powder and the mixture was granulated and molded under a pressure of 2000 kg / cm 2 to obtain a molded body having a diameter of 22 mm and a thickness of 11 mm. .
【００１５】それから、この成形体を空気中１３５０〜
１４００℃で４時間焼結して、誘電体磁器（試料）を得
た。Then, the molded body was placed in air at 1350
Sintering was performed at 1400 ° C. for 4 hours to obtain a dielectric ceramic (sample).
【００１６】このようにして得た試料について、１０Ｇ
Ｈｚにおける誘電特性を誘電体共振器法により測定し
た。その結果を表１に示す。For the sample thus obtained, 10 G
The dielectric property at Hz was measured by the dielectric resonator method. The results are shown in Table 1.
【００１７】なお、表１において、試料番号に＊印を付
したものは、この発明の範囲外の比較例であり、その他
のものは、この発明の範囲内の実施例である。In Table 1, the sample numbers marked with * are comparative examples outside the scope of the present invention, and the others are examples within the scope of the present invention.
【００１８】この発明の範囲内の誘電体磁器組成物は、
上述のように、１３５０〜１４００℃の低温で焼結する
ことが可能であり、得られた焼結体（誘電体磁器）は、
表１に示すように、比誘電率（εr）が約６〜８と低
く、Ｑ値は１０ＧＨｚにおいて５０００〜７０００と高
い。すなわち、この発明の実施例にかかる誘電体磁器
は、低温で焼結したにもかかわらず、比誘電率εr 及び
高周波領域（１０ＧＨｚ）におけるＱ値について良好な
結果が得られていることがわかる。The dielectric porcelain composition within the scope of the present invention is
As described above, it is possible to sinter at a low temperature of 1350 to 1400 ° C., and the obtained sintered body (dielectric ceramic) is
As shown in Table 1, the relative permittivity (ε r ) is as low as about 6 to 8 and the Q value is as high as 5000 to 7000 at 10 GHz. That is, it can be seen that the dielectric porcelain according to the example of the present invention obtained good results with respect to the relative permittivity ε r and the Q value in the high frequency region (10 GHz), despite being sintered at a low temperature. .
【００１９】次に、この発明の高周波用誘電体磁器組成
物において、その組成範囲を限定した理由について説明
する。Next, the reason why the composition range of the high frequency dielectric ceramic composition of the present invention is limited will be described.
【００２０】［ＭｇＯ，ＳｉＯ2の割合］主成分である
ＭｇＯの含有率（重量百分率）が４０％（すなわち、一
般式：ｘＭｇＯ−ｙＳｉＯ2におけるｘの値が４０）未
満の場合には良好な焼結体を得ることができず、しかも
Ｑ値が低下する。また、ＭｇＯの含有率が８５％（すな
わち、ｘの値が８５）を越えると比誘電率が高くなりす
ぎる傾向がある。したがって、ＭｇＯの含有率は４０〜
８５％（ｘ＝４０〜８５）の範囲にあることが好まし
い。また、ｘＭｇＯ−ｙＳｉＯ2の残部を構成するＳｉ
Ｏ2の含有率は１５〜６０％（すなわち、Ｙ＝１５〜６
０）の範囲に有ることが好ましい。[Ratio of MgO and SiO 2 ] When the content (weight percentage) of MgO as the main component is less than 40% (that is, the value of x in the general formula: xMgO-ySiO 2 is 40), it is preferable. A sintered body cannot be obtained, and the Q value decreases. If the MgO content exceeds 85% (that is, the value of x is 85), the relative dielectric constant tends to be too high. Therefore, the content rate of MgO is 40 to
It is preferably in the range of 85% (x = 40 to 85). In addition, Si that constitutes the balance of xMgO-ySiO 2
O 2 content is 15 to 60% (that is, Y = 15 to 6).
It is preferably in the range of 0).
【００２１】［Ｂａ源（ＢａＣＯ3），Ｓｒ源（ＳｒＣ
Ｏ3）の割合］ＢａＣＯ3などのＢａ源、及びＳｒＣＯ3
などのＳｒ源の添加量については、例えば、Ｂａ源及び
Ｓｒ源の一方または両方を、それぞれＢａＣＯ3または
ＳｒＣＯ3に換算して、その合量が０．３重量％未満に
なるような割合で添加した場合には低温（１３５０〜１
４００℃）で焼結させることが困難になり、また、その
合量が３．０重量％を越えるような割合で添加した場合
にはＱ値が低下する。したがって、Ｂａ源及びＳｒ源の
添加量は、それぞれをＢａＣＯ3及びＳｒＣＯ3に換算し
場合の合量が０．３〜３．０重量％の範囲になるような
割合であることが好ましい。[Ba source (BaCO 3 ), Sr source (SrC
O 3 ) ratio] Ba source such as BaCO 3 and SrCO 3
Regarding the amount of Sr source added such as, for example, one or both of the Ba source and the Sr source are converted to BaCO 3 or SrCO 3 , respectively, and the total amount is less than 0.3% by weight. When added, low temperature (1350-1
It becomes difficult to sinter at 400 ° C., and when the total amount exceeds 3.0% by weight, the Q value decreases. Therefore, the addition amounts of the Ba source and the Sr source are preferably such that the total amount when converted to BaCO 3 and SrCO 3 is in the range of 0.3 to 3.0% by weight.
【００２２】[0022]
【発明の効果】上述のように、この発明の高周波用誘電
体磁器組成物は、一般式：ｘＭｇＯ−ｙＳｉＯ2（但
し、式中のｘ，ｙは、各成分の重量百分率を表し、４０
≦ｘ≦８５，１５≦ｙ≦６０，ｘ＋ｙ＝１００である）
で表される組成を有する磁器組成物に、焼結することに
よりバリウム酸化物となる物質（Ｂａ源）及び焼結する
ことによりストロンチウム酸化物となる物質（Ｓｒ源）
の一方または両方を、それぞれＢａＣＯ3またはＳｒＣ
Ｏ3に換算して、その合量が０．３〜３．０重量％にな
るような割合で添加するようにしているので、これらの
添加物により、Ｑ値を向上させるとともに、焼結性を改
善することが可能になる。As described above, the high frequency dielectric ceramic composition of the present invention has the general formula: xMgO-ySiO 2 (where x and y in the formula represent the weight percentages of the respective components, and 40
≦ x ≦ 85, 15 ≦ y ≦ 60, x + y = 100)
A substance which becomes a barium oxide by sintering (Ba source) and a substance which becomes a strontium oxide by sintering (Sr source) in a porcelain composition having a composition represented by
One or both of BaCO 3 or SrC, respectively.
Since it is added in a ratio such that the total amount thereof is converted to O 3 and becomes 0.3 to 3.0% by weight, these additives improve the Q value and improve the sinterability. Can be improved.
【００２３】すなわち、この発明の高周波用誘電体磁器
組成物を用いることにより、マイクロ波領域などの高周
波帯域において高いＱ値を有するとともに、フォルステ
ライトやステアタイトに匹敵する低誘電率を有する高周
波用誘電体磁器を得ることが可能になる。しかも、低温
で焼結することが可能であるため、低コストで、工業的
に大量生産することが可能になる。That is, by using the high-frequency dielectric ceramic composition of the present invention, a high-frequency dielectric ceramic composition having a high Q value in a high frequency band such as a microwave region and a low dielectric constant comparable to forsterite or steatite is used. It becomes possible to obtain a dielectric porcelain. Moreover, since it is possible to sinter at low temperature, it becomes possible to mass-produce industrially at low cost.
Claims (1)
式中のｘ，ｙは、各成分の重量百分率を表し、４０≦ｘ
≦８５，１５≦ｙ≦６０，ｘ＋ｙ＝１００である）で表
される組成を有する磁器組成物に、焼結することにより
バリウム酸化物となる物質（Ｂａ源）及び焼結すること
によりストロンチウム酸化物となる物質（Ｓｒ源）の一
方または両方を、それぞれＢａＣＯ3またはＳｒＣＯ3に
換算して、その合量が０．３〜３．０重量％になるよう
な割合で添加したことを特徴とする高周波用誘電体磁器
組成物。1. A general formula: xMgO-ySiO 2 (however,
In the formula, x and y represent the weight percentage of each component, and 40 ≦ x
≦ 85, 15 ≦ y ≦ 60, x + y = 100), a porcelain composition having a composition that becomes barium oxide by sintering (Ba source), and strontium oxidation by sintering. One or both of the substances (Sr source) to be a substance are converted into BaCO 3 or SrCO 3 , respectively, and added in such a proportion that the total amount becomes 0.3 to 3.0% by weight. A high frequency dielectric ceramic composition.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14269393A JP3446249B2 (en) | 1993-05-21 | 1993-05-21 | High frequency dielectric ceramic composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14269393A JP3446249B2 (en) | 1993-05-21 | 1993-05-21 | High frequency dielectric ceramic composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06333429A true JPH06333429A (en) | 1994-12-02 |
| JP3446249B2 JP3446249B2 (en) | 2003-09-16 |
Family
ID=15321342
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14269393A Expired - Lifetime JP3446249B2 (en) | 1993-05-21 | 1993-05-21 | High frequency dielectric ceramic composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3446249B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1095915A2 (en) | 1999-10-27 | 2001-05-02 | Ngk Spark Plug Co., Ltd. | Low-temperature firing ceramic composition, process for producing same and wiring substrate prepared by using same |
| WO2004060829A1 (en) * | 2002-12-27 | 2004-07-22 | Nikko Company | Low temperature sintering ceramic composition for use in high frequency, method of fabricating the same and electronic component |
| US7358207B2 (en) | 2003-12-18 | 2008-04-15 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition and multilayer electronic component |
| JP2008230948A (en) * | 2007-02-22 | 2008-10-02 | Tdk Corp | Dielectric porcelain composition |
| JP2009274892A (en) * | 2008-05-13 | 2009-11-26 | Murata Mfg Co Ltd | Dielectric ceramic composition for high frequency, and dielectric component |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4752340B2 (en) * | 2005-06-13 | 2011-08-17 | 株式会社村田製作所 | Dielectric ceramic composition and multilayer ceramic capacitor |
-
1993
- 1993-05-21 JP JP14269393A patent/JP3446249B2/en not_active Expired - Lifetime
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1095915A2 (en) | 1999-10-27 | 2001-05-02 | Ngk Spark Plug Co., Ltd. | Low-temperature firing ceramic composition, process for producing same and wiring substrate prepared by using same |
| US6602623B1 (en) | 1999-10-27 | 2003-08-05 | Ngk Spark Plug Co., Ltd. | Low-temperature firing ceramic composition, process for producing same and wiring substrate prepared by using same |
| WO2004060829A1 (en) * | 2002-12-27 | 2004-07-22 | Nikko Company | Low temperature sintering ceramic composition for use in high frequency, method of fabricating the same and electronic component |
| US7276460B2 (en) | 2002-12-27 | 2007-10-02 | Nikko Company | Low temperature sintering ceramic composition for use in high frequency, method of fabricating the same and electronic component |
| US7358207B2 (en) | 2003-12-18 | 2008-04-15 | Murata Manufacturing Co., Ltd. | Dielectric ceramic composition and multilayer electronic component |
| JP2008230948A (en) * | 2007-02-22 | 2008-10-02 | Tdk Corp | Dielectric porcelain composition |
| JP2009274892A (en) * | 2008-05-13 | 2009-11-26 | Murata Mfg Co Ltd | Dielectric ceramic composition for high frequency, and dielectric component |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3446249B2 (en) | 2003-09-16 |
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