JPS63255939A - Linear array - Google Patents

Abstract

PURPOSE:To constitute a large scale analog circuit which can be operated by a high voltage power source, by arranging an element for the high voltage power source in, at least, a part of the periphery of a chip. CONSTITUTION:In the outer periphery of a chip 1, a plurality of NPN transistors 4 for a high voltage power source are arranged in the form of a nearly rectangular ring, so as to surround a transistor array 2. An adequate number of the transistors 4 for the high voltage power source are combined to constitute an input-output circuit and the like having a high operating voltage. These transistors 4 for the high voltage power source are formed by a fine working in the similar manner to transistors 3 for a low voltage power source. Thereby, the integration degree of elements for a low voltage power source is increased, and a large scale analog circuit can be constituted, which can be operated by the high voltage power source.

Description

DETAILED DESCRIPTION OF THE INVENTION Object of the Invention (Field of Industrial Application) The present invention relates to a semiconductor integrated circuit, and more particularly to a mask slicing linear array.

(Prior Art) A low-voltage power transistor 30 provided in a linear array manufactured by a conventional basic bipolar process is constructed as shown in FIGS. 10(a) and 10(b) in consideration of device breakdown voltage. For example, the number of transistors 30 that can be formed on a 3IIX11 square chip is limited to about 200 in terms of yield, and there is a limit to the circuit scale that can be constructed using this conventional linear array.

(Problem to be solved by the invention) However, as systems become smaller and more multifunctional, the functions required of linear arrays tend to increase. Play is required. For this purpose, it is necessary to increase the number of internal transistors several times by using a miniaturization process instead of the conventional process, but as each element becomes miniaturized, the element withstand voltage decreases, and the linear array fabricated using the miniaturization process For example, there is a problem in that it cannot be used with the 12V voltage of an automobile battery.

This invention was made to solve the above problems, and its purpose is to improve the degree of integration of low-voltage power supply elements and to configure large-scale analog circuits.
The objective is to provide a linear array that can be used with a high voltage power supply.

Structure of the Invention (Means for Solving Problems) In order to achieve the above object, the present invention provides a linear array in which a low voltage power supply element and a high voltage power supply element are provided on a chip. A configuration is adopted in which the device is arranged at least in part on the peripheral edge of the device.

(Function) Therefore, the input/output circuit section of the high-voltage power supply system is configured with high-voltage power supply elements, and the control circuit, etc. of the low-voltage power supply system is configured with low-voltage power supply elements, and the input/output circuit and the control circuit, etc. are connected. This allows this linear array to be used with a 12V voltage, for example in a car battery.

(Example) Hereinafter, an example of a linear array embodying the present invention will be described based on the drawings.

As shown in FIG. 1, a plurality of rows of transistor arrays 2 each having a large number of NPN transistors 3 for low-voltage power supply shown in FIGS. There is. Each transistor 3 of the transistor array 2 is formed by a miniaturization process and has a high degree of integration. For example, a control circuit or the like can be constructed by combining an appropriate number of low-voltage power supply transistors 3.

A plurality of high-voltage power supply NPNI transistors 4 as shown in FIGS. 3(a) and 3(b) are arranged on the outer periphery of the tube 1 in a substantially rectangular ring shape so as to surround the transistor array 2. By combining an appropriate number of high-voltage power supply transistors 4, it is possible to configure an input/output circuit that uses a high voltage. Further, these high-voltage power supply transistors 4 are also formed by microfabrication similarly to the low-voltage power supply transistor 3.

Note that in this embodiment, the low voltage power supply transistor 3
The ratio between the number of high-voltage power supply transistors 4 and the number of high-voltage power supply transistors 4 is set to approximately 4=1, thereby preventing a decrease in the degree of integration.

The wiring track area 5 between the core portion 1a and the high-voltage power supply transistors 4 arranged in an annular manner is between each circuit constituted by the low-voltage power supply transistor 3, or between the circuit constituted by the transistor 3 and the high-voltage power supply. This is an area for wiring between the input/output circuit and the like made up of the transistor 4.

The external bridge 6 is used as a wire bonding pad or a bump for a flimb chip.

By subjecting the linear array constructed as described above to a polysilicon process, an electrode process, a wiring process, etc., a circuit that can be used in a high-voltage power source 8 such as an automobile battery is constructed as shown in FIG. 4.

The step-down circuit 7 and the input circuit 9 are each constructed by using an appropriate number of the high-voltage power supply transistors 4, and the step-down circuit 7 is configured to step down the 12V voltage of the power supply 8 to around 5V. , a signal SG1 of 12V voltage outputted from an external input device 10 such as a switch, etc., is converted into a signal SG2 of 5V voltage or less and output to the control circuit 12 at the next stage.

The constant voltage circuit 11 and the control circuit 12 are constructed by using an appropriate number of the low-voltage power supply transistors 3, and the constant voltage circuit 11 converts the voltage reduced to around 5■ by the step-down circuit 7 into a precise 5■ voltage. The control circuit 12 outputs a control signal SG3 to the next stage output circuit 13 based on the SG2 outputted from the input circuit 9. There is.

Further, the output circuit 13 is constructed by using an appropriate number of high-voltage power supply transistors 4 similarly to the input circuit 9, and converts the control signal SG3 into a drive signal SG4 of 12V voltage to supply the power supply 8.
The output signal is output to a drive circuit 14 for driving equipment such as a coil connected to the drive circuit 14.

Now, in this embodiment, the low-voltage power supply transistor 3 and the high-voltage power supply transistor 4 are formed on the chip 1 by a miniaturization process, so the degree of integration of the low-voltage power supply transistor 3 is greatly improved to configure a large-scale analog circuit. At the same time, the reduction in element withstand voltage due to the miniaturization of the low-voltage power transistor 3 can be compensated for by the circuit configured by combining the high-voltage power transistor 4, so this linear array can be used for example in a car battery with a voltage of 12V, etc. It can be used with the high voltage power supply 8.

Further, in this embodiment, a large number of low-voltage power supply transistors 3 are provided in the core portion 1a at the center of the chip 1, and
Since a large number of high-voltage power supply transistors 4 are arranged approximately in a ring shape around the outer periphery of the high-voltage power supply transistor 4, the high-voltage power supply transistor 4 does not get in the way when wiring is connected between the low-voltage power supply transistors 3, and the high-voltage power supply transistor 4 Since it is located near the external electrode 6, wiring between the high-voltage power supply transistor 4 and the external input device 1O or the drive circuit 14 such as a coil becomes easy, and pattern design can be easily performed.

In the above embodiment, the output circuit 13 was constructed by combining a number of high-voltage power supply transistors 4, but as shown in FIG. 5, an element for adjusting the signal level transmitted between the linear array and external equipment Therefore, only one high-voltage power supply transistor 4 may be used.

Further, as shown in FIG. 6, when configuring a linear circuit block 17 consisting of an operational amplifier 15, a bias circuit 16, etc. each operating on a high-voltage power supply, a plurality of high-voltage power supply transistors 4 may be disposed close to each other. Therefore, pattern design can be easily performed.

Furthermore, as shown in FIG. 7, the high-voltage power supply transistor 4 can also be used as a pair of diodes 19 constituting the electrostatic discharge protection circuit 18. In this case, a PN junction between base B and emitter 8 or between base B and collector C is used. Resistor 20 in this example is a polysilicon resistor.

Further, in the above embodiment, the high-voltage power supply transistor 4 is arranged approximately in an annular shape around the outer peripheral edge of the chip l, but for example, as shown in FIG. As shown, it may be provided on two side edges of the outer peripheral edge.

Effects of the Invention As detailed above, the present invention has the excellent effect that it is possible to configure large-scale analog circuits by improving the degree of integration of low-voltage power supply elements, and it can also be used exclusively for high-voltage power supplies. .

[Brief explanation of drawings]

FIG. 1 is a plan view showing an embodiment of a linear array embodying the present invention, FIG. 2(a) is a plan view showing a low-voltage power supply transistor, FIG. Figure 3 (
a) is a plan view showing a transistor for high-voltage power supply;
b) is its cross-sectional view, Fig. 4 is a block diagram of a general circuit configured with a linear play, Fig. 5 is an electric circuit diagram showing a state in which a high-voltage power supply transistor is used as a signal adjustment element, and Fig. 6 The figure is an electric circuit diagram showing a linear circuit block composed of high-voltage power supply transistors, Figure 7 is a diagram of an electrostatic discharge protection circuit composed of high-voltage power supply transistors, and Figures 8 and 9 are plan views showing separate linear arrays. 10(a) is a plan view showing a conventional low-voltage power supply transistor, and FIG. 10(b) is a sectional view thereof. In the figure, 1 is a chip, 3 is a low-voltage power supply transistor, and 4 is a high-voltage power supply transistor. Patent applicant Nippondenso Co., Ltd. Agent
Patent Attorney On 1) Hironobu 1 [Figure 2 (a) Figure 8 (a)

Claims (1)

[Claims] 1. A linear array in which a low-voltage power supply element and a high-voltage power supply element are provided on a chip, characterized in that the high-voltage power supply element is disposed on at least a part of the periphery of the chip. array. 2. The linear array according to claim 1, wherein the high-voltage power supply elements are arranged substantially annularly around the periphery of the chip so as to surround the low-voltage power supply elements.