JPS6325505B2 - - Google Patents

Info

Publication number
JPS6325505B2
JPS6325505B2 JP54117797A JP11779779A JPS6325505B2 JP S6325505 B2 JPS6325505 B2 JP S6325505B2 JP 54117797 A JP54117797 A JP 54117797A JP 11779779 A JP11779779 A JP 11779779A JP S6325505 B2 JPS6325505 B2 JP S6325505B2
Authority
JP
Japan
Prior art keywords
film
polymer material
resistance value
ions
resistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54117797A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5642366A (en
Inventor
Katsuhiko Akyama
Hideyuki Takahashi
Masaki Okayama
Shuji Tsuchida
Akira Kojima
Norio Suzuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP11779779A priority Critical patent/JPS5642366A/ja
Publication of JPS5642366A publication Critical patent/JPS5642366A/ja
Publication of JPS6325505B2 publication Critical patent/JPS6325505B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers

Landscapes

  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP11779779A 1979-09-13 1979-09-13 Manufacture of semiconductor device Granted JPS5642366A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11779779A JPS5642366A (en) 1979-09-13 1979-09-13 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11779779A JPS5642366A (en) 1979-09-13 1979-09-13 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS5642366A JPS5642366A (en) 1981-04-20
JPS6325505B2 true JPS6325505B2 (enrdf_load_stackoverflow) 1988-05-25

Family

ID=14720519

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11779779A Granted JPS5642366A (en) 1979-09-13 1979-09-13 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5642366A (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3138960A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zur erzeugung elektrisch leitender schichten
JPS58101439A (ja) * 1981-12-12 1983-06-16 Toshiba Corp 半導体装置の製造方法
JPS59111353A (ja) * 1982-12-17 1984-06-27 Toshiba Corp 半導体装置の製造方法
JPS59186365A (ja) * 1983-04-06 1984-10-23 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH0327700Y2 (enrdf_load_stackoverflow) * 1987-05-20 1991-06-14
US5753523A (en) * 1994-11-21 1998-05-19 Brewer Science, Inc. Method for making airbridge from ion-implanted conductive polymers

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS531109B2 (enrdf_load_stackoverflow) * 1973-02-20 1978-01-14

Also Published As

Publication number Publication date
JPS5642366A (en) 1981-04-20

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