JPS6325498B2 - - Google Patents
Info
- Publication number
- JPS6325498B2 JPS6325498B2 JP54092266A JP9226679A JPS6325498B2 JP S6325498 B2 JPS6325498 B2 JP S6325498B2 JP 54092266 A JP54092266 A JP 54092266A JP 9226679 A JP9226679 A JP 9226679A JP S6325498 B2 JPS6325498 B2 JP S6325498B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- bubble
- processing
- etching
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 26
- 239000007788 liquid Substances 0.000 claims description 15
- 238000004381 surface treatment Methods 0.000 claims description 11
- 238000003756 stirring Methods 0.000 claims description 8
- 239000006185 dispersion Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 23
- 239000007789 gas Substances 0.000 description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 9
- 239000010703 silicon Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 description 3
- 239000001569 carbon dioxide Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
- H01L21/3046—Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9226679A JPS5617021A (en) | 1979-07-20 | 1979-07-20 | Surface treatment of substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9226679A JPS5617021A (en) | 1979-07-20 | 1979-07-20 | Surface treatment of substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5617021A JPS5617021A (en) | 1981-02-18 |
| JPS6325498B2 true JPS6325498B2 (ko) | 1988-05-25 |
Family
ID=14049587
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9226679A Granted JPS5617021A (en) | 1979-07-20 | 1979-07-20 | Surface treatment of substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5617021A (ko) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58123730A (ja) * | 1982-01-18 | 1983-07-23 | Toshiba Corp | 半導体ウエハ−エツチング装置 |
| JPS6386525A (ja) * | 1986-09-30 | 1988-04-16 | Kyushu Denshi Kinzoku Kk | 半導体シリコンウエ−ハのエツチング装置 |
| JPH0160532U (ko) * | 1987-10-13 | 1989-04-17 | ||
| US7648584B2 (en) * | 2003-06-27 | 2010-01-19 | Lam Research Corporation | Method and apparatus for removing contamination from substrate |
| CN103377878A (zh) * | 2012-04-18 | 2013-10-30 | 三菱电机株式会社 | 凹凸化硅基板的制造方法、处理装置和太阳能电池元件的制造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5093775A (ko) * | 1973-12-19 | 1975-07-26 | ||
| JPS5110770A (ja) * | 1974-07-16 | 1976-01-28 | Matsushita Electric Ind Co Ltd | Etsuchinguhoho |
| JPS5115977A (en) * | 1974-07-31 | 1976-02-07 | Hitachi Ltd | Banjobutsuno keishaetsuchinguho |
-
1979
- 1979-07-20 JP JP9226679A patent/JPS5617021A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5093775A (ko) * | 1973-12-19 | 1975-07-26 | ||
| JPS5110770A (ja) * | 1974-07-16 | 1976-01-28 | Matsushita Electric Ind Co Ltd | Etsuchinguhoho |
| JPS5115977A (en) * | 1974-07-31 | 1976-02-07 | Hitachi Ltd | Banjobutsuno keishaetsuchinguho |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5617021A (en) | 1981-02-18 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4989540A (en) | Apparatus for reaction treatment | |
| US7578302B2 (en) | Megasonic cleaning using supersaturated solution | |
| JP3415373B2 (ja) | 半導体基板等の表層の溶解方法及び装置 | |
| JPS60189936A (ja) | 半導体製造装置 | |
| JPS6325498B2 (ko) | ||
| US6039814A (en) | Cleaning method utilizing degassed cleaning liquid with applied ultrasonics | |
| JPH0855827A (ja) | ウェーハカセットおよびこれを使用した洗浄装置 | |
| US4840701A (en) | Etching apparatus and method | |
| US20030181042A1 (en) | Etching uniformity in wet bench tools | |
| KR20060037270A (ko) | 과포화된 세정 용액을 사용한 메가소닉 세정 | |
| JP3186482B2 (ja) | 半導体基板の電解エッチング方法 | |
| JPS59166675A (ja) | エツチング装置 | |
| JPS62123721A (ja) | 処理装置 | |
| JPS59179788A (ja) | ケミカルエッチング装置 | |
| JP2019197814A (ja) | 基板処理装置 | |
| KR100432495B1 (ko) | 실리콘 웨이퍼 에칭장치 | |
| JPH06101439B2 (ja) | Ｃｖｄ装置のガスフロ−方法 | |
| JP2019009364A (ja) | 基板キャリア | |
| JPS62132325A (ja) | ウエフアのエツチング方法およびそれに用いるウエフア・キヤリア | |
| JPH0227724A (ja) | 化合物半導体のエッチング方法及び装置 | |
| JP2006310702A (ja) | 基板支持方法および半導体基板 | |
| JP3184550B2 (ja) | 気相成長方法及びその装置 | |
| JPS61216330A (ja) | 半導体装置のエツチング装置 | |
| JPH07297168A (ja) | エッチング装置 | |
| JP2007123803A (ja) | 半導体ウエハ支持部材及び半導体ウエハ支持部材の評価方法 |