JPS6325496B2 - - Google Patents
Info
- Publication number
- JPS6325496B2 JPS6325496B2 JP55187087A JP18708780A JPS6325496B2 JP S6325496 B2 JPS6325496 B2 JP S6325496B2 JP 55187087 A JP55187087 A JP 55187087A JP 18708780 A JP18708780 A JP 18708780A JP S6325496 B2 JPS6325496 B2 JP S6325496B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- insulating film
- liquid
- annealing
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Formation Of Insulating Films (AREA)
- Recrystallisation Techniques (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18708780A JPS57112013A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18708780A JPS57112013A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS57112013A JPS57112013A (en) | 1982-07-12 |
JPS6325496B2 true JPS6325496B2 (enrdf_load_stackoverflow) | 1988-05-25 |
Family
ID=16199882
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18708780A Granted JPS57112013A (en) | 1980-12-29 | 1980-12-29 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS57112013A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01109199U (enrdf_load_stackoverflow) * | 1988-01-16 | 1989-07-24 | ||
JPH0326997U (enrdf_load_stackoverflow) * | 1989-07-27 | 1991-03-19 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS566443A (en) * | 1979-06-28 | 1981-01-23 | Agency Of Ind Science & Technol | Laser annealing method |
-
1980
- 1980-12-29 JP JP18708780A patent/JPS57112013A/ja active Granted
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01109199U (enrdf_load_stackoverflow) * | 1988-01-16 | 1989-07-24 | ||
JPH0326997U (enrdf_load_stackoverflow) * | 1989-07-27 | 1991-03-19 |
Also Published As
Publication number | Publication date |
---|---|
JPS57112013A (en) | 1982-07-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR900000561B1 (ko) | 반도체 집적회로의 제법 및 그를 이용하여 제조된 장치 | |
US4404735A (en) | Method for manufacturing a field isolation structure for a semiconductor device | |
JPS59169125A (ja) | 半導体ウエハ−の加熱方法 | |
JPS6259896B2 (enrdf_load_stackoverflow) | ||
US4203649A (en) | Process for manufacturing an integrated optical structure and an _opto-electronic device using said structure | |
JPH01187814A (ja) | 薄膜半導体装置の製造方法 | |
US3255005A (en) | Masking process for semiconductor elements | |
EP0045593B1 (en) | Process for producing semiconductor device | |
JPS59169126A (ja) | 半導体ウエハ−の加熱方法 | |
JPS6325496B2 (enrdf_load_stackoverflow) | ||
JPS6348438B2 (enrdf_load_stackoverflow) | ||
JPS63314862A (ja) | 薄膜トランジスタの製造方法 | |
JPS57104218A (en) | Fabrication of semiconductor device | |
JPS633447B2 (enrdf_load_stackoverflow) | ||
JP2701711B2 (ja) | 多結晶シリコン薄膜の製造方法 | |
JPS5522811A (en) | Manufacturing of semiconductor apparatus | |
JPH09133928A (ja) | 液晶表示装置用薄膜トランジスタ基板およびその製造方法 | |
JP2587972B2 (ja) | 薄膜構造 | |
JP2005079312A (ja) | 半導体装置の製造方法およびそれに用いられる半導体製造装置並びに液晶表示装置 | |
JP2014090045A (ja) | イオン導入層の活性化方法、および、半導体装置の製造方法 | |
JPH02224253A (ja) | 薄膜半導体装置の製造方法 | |
KR0140647B1 (ko) | 위상반전마스크의 제조방법 | |
JPH01179742A (ja) | 液晶表示装置用基板およびその作製方法 | |
JPS6242519A (ja) | 半導体装置の製造方法 | |
JPH0547978B2 (enrdf_load_stackoverflow) |