JPS6324638A - 微細ホ−ルうめこみ方法 - Google Patents
微細ホ−ルうめこみ方法Info
- Publication number
- JPS6324638A JPS6324638A JP16665286A JP16665286A JPS6324638A JP S6324638 A JPS6324638 A JP S6324638A JP 16665286 A JP16665286 A JP 16665286A JP 16665286 A JP16665286 A JP 16665286A JP S6324638 A JPS6324638 A JP S6324638A
- Authority
- JP
- Japan
- Prior art keywords
- film
- deposited
- contact hole
- hole
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004544 sputter deposition Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000004020 conductor Substances 0.000 claims description 15
- 238000007740 vapor deposition Methods 0.000 claims description 6
- 238000010891 electric arc Methods 0.000 abstract description 4
- 238000001312 dry etching Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 2
- 238000007733 ion plating Methods 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 molybdenum Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16665286A JPS6324638A (ja) | 1986-07-17 | 1986-07-17 | 微細ホ−ルうめこみ方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16665286A JPS6324638A (ja) | 1986-07-17 | 1986-07-17 | 微細ホ−ルうめこみ方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6324638A true JPS6324638A (ja) | 1988-02-02 |
| JPH0569294B2 JPH0569294B2 (enrdf_load_stackoverflow) | 1993-09-30 |
Family
ID=15835234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16665286A Granted JPS6324638A (ja) | 1986-07-17 | 1986-07-17 | 微細ホ−ルうめこみ方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6324638A (enrdf_load_stackoverflow) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60233840A (ja) * | 1984-05-04 | 1985-11-20 | Nec Corp | 段差の被覆方法 |
-
1986
- 1986-07-17 JP JP16665286A patent/JPS6324638A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60233840A (ja) * | 1984-05-04 | 1985-11-20 | Nec Corp | 段差の被覆方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0569294B2 (enrdf_load_stackoverflow) | 1993-09-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4630357A (en) | Method for forming improved contacts between interconnect layers of an integrated circuit | |
| US5387550A (en) | Method for making a fillet for integrated circuit metal plug | |
| JPH05114587A (ja) | コンタクト包囲条件のない集積回路メタリゼーシヨン及びその製造方法 | |
| JPH0680737B2 (ja) | 半導体装置の製造方法 | |
| US5960314A (en) | Semiconductor processing method of providing an electrically conductive interconnecting plug between an elevationally conductive node and an elevationally outer electrically conductive node | |
| US5747383A (en) | Method for forming conductive lines and stacked vias | |
| JP2556138B2 (ja) | 半導体装置の製造方法 | |
| US5843837A (en) | Method of contact hole burying | |
| JPH10289949A (ja) | 金属スペーサを用いた相互接続およびその形成方法 | |
| JP2000216240A (ja) | 接点／バイアの接着層を製造するための方法 | |
| JPH0697297A (ja) | コンタクトを有する半導体素子及びその製造方法 | |
| JPS6324638A (ja) | 微細ホ−ルうめこみ方法 | |
| KR100197669B1 (ko) | 반도체 소자의 금속배선 형성방법 | |
| US5804504A (en) | Method for forming wiring of semiconductor device | |
| KR100399064B1 (ko) | 반도체 소자 제조방법 | |
| JP3087692B2 (ja) | 半導体装置の製造方法 | |
| KR100464186B1 (ko) | 반도체소자의 배선구조 및 그 제조방법 | |
| JP3552526B2 (ja) | 半導体装置の導電体の製造方法 | |
| JPH084088B2 (ja) | 薄膜形成方法 | |
| JPH0653326A (ja) | 半導体装置の製造方法 | |
| KR100257154B1 (ko) | 반도체 소자의 금속 배선 형성 방법 | |
| JPH0552057B2 (enrdf_load_stackoverflow) | ||
| JP2546482B2 (ja) | 半導体装置及びその製造方法 | |
| KR0156122B1 (ko) | 반도체장치의 제조방법 | |
| KR100236095B1 (ko) | 반도체 소자의 금속배선 형성방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |