JPS63244611A - Chamfering of notch part at semiconductor wafer - Google Patents
Chamfering of notch part at semiconductor waferInfo
- Publication number
- JPS63244611A JPS63244611A JP62078766A JP7876687A JPS63244611A JP S63244611 A JPS63244611 A JP S63244611A JP 62078766 A JP62078766 A JP 62078766A JP 7876687 A JP7876687 A JP 7876687A JP S63244611 A JPS63244611 A JP S63244611A
- Authority
- JP
- Japan
- Prior art keywords
- grinding wheel
- notch
- notch part
- wafer
- center line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims abstract description 6
- 230000002093 peripheral effect Effects 0.000 abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 2
- -1 GGG Chemical compound 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005336 cracking Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000011863 silicon-based powder Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B9/00—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor
- B24B9/02—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground
- B24B9/06—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain
- B24B9/065—Machines or devices designed for grinding edges or bevels on work or for removing burrs; Accessories therefor characterised by a special design with respect to properties of materials specific to articles to be ground of non-metallic inorganic material, e.g. stone, ceramics, porcelain of thin, brittle parts, e.g. semiconductors, wafers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は半導体ウェーハの外周縁に切欠形成されたノツ
チ部の面取り方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a method for chamfering a notch portion formed on the outer peripheral edge of a semiconductor wafer.
（従来の技術）
半導体素子の材料であるシリコン、 ＧＧＧ 、リヂウ
ムタンタレートなとのウェーハは非常に堅くて脆い上に
単結晶のため、特定の結晶軸方向には極度に割れ易いも
のである。しかもウェーハ製造工程及びデバイス製造工
程は、現在自動化が進んでおり、ウェーハは何回も何回
も搬送される。このため、ウェーハの側面に面取り加工
を施さないと、カケ、チップが発生し、カケだシリコン
粉は、ゴミやホコリと同様にデバイスの特性劣化や収率
低下の原因となる。(Prior art) Wafers made of silicon, GGG, and lithium tantalate, which are materials for semiconductor devices, are extremely hard and brittle, and are single crystal, so they are extremely susceptible to cracking in certain crystal axis directions. . Moreover, the wafer manufacturing process and the device manufacturing process are currently highly automated, and wafers are transported over and over again. For this reason, if the sides of the wafer are not chamfered, chips and chips will occur, and chipped silicon powder, like dirt and dust, will cause deterioration of device characteristics and a decrease in yield.
そのため、従来はウェーへの外周面を面取りしているが
、ウェーハの外周面には面取り加工後における種々の作
業時において、ウェーハの表・裏面判別及び位置決めな
どのために約９０°の角度で平面路■字形に切欠いたノ
ツチが形成されているが、そのノツチ部は全く面取りさ
れずに、俵の加工に搬送供給されているのが実状である
従って、デバイス工程等で位置決めのビンにウェーハの
ノツチ部を当接させた時、カケを発生するなどの問題を
有する。Therefore, conventionally, the outer circumferential surface of the wafer is chamfered, but the outer circumferential surface of the wafer is chamfered at an angle of about 90° to distinguish and position the front and back sides of the wafer during various operations after chamfering. Although a notch is formed in the shape of a flat road, the actual situation is that the notch is not chamfered at all before it is transported and supplied to bales for processing. There are problems such as chipping when the notches of the
（発明が解決しようとする問題点）
本発明は上述した如き従来の事情に鑑み、外周縁の面取
りと同じ角度でノツチ部を面取りする加１方法を提供す
ることにある。(Problems to be Solved by the Invention) In view of the conventional circumstances as described above, an object of the present invention is to provide a method for chamfering a notch portion at the same angle as the chamfering of the outer peripheral edge.
（問題点を解決するための手段）
上記問題点を解決するために本発明が講じた技術的手段
は、チャック治具で挟持したウェーハにおけるノツチ部
の中心線上に、先端形状が山形をなした砥石の砥石厚の
中心線を一致させ、且つ砥石の回転中心をウェーハの水
平面に対し上方又は下方に位置させて回転し、ノツチ部
に当接してノツチ部の周縁を一度に所定角度に面取りす
ることを特徴とする。(Means for Solving the Problems) The technical means taken by the present invention to solve the above problems is that the tip shape is chevron-shaped on the center line of the notch part of the wafer held by the chuck jig. Align the center lines of the grindstone thickness of the grindstone, and position the center of rotation of the grindstone above or below the horizontal plane of the wafer, rotate, and abut the notch to chamfer the periphery of the notch at a predetermined angle at once. It is characterized by
上記砥石における先端山形の角度はノツチ部の面取り角
度によって決定され、その山角度が決定すればウェーハ
に対する砥石の回転中心位置が決定される。The angle of the tip chevron of the grindstone is determined by the chamfer angle of the notch portion, and once the chevron angle is determined, the rotation center position of the grindstone with respect to the wafer is determined.
（作用）
上記手段によれば、砥石の先端形状が山形をなしている
ため、その砥石の回転中心をウェーハの上・下面に対し
て上方、又は下方に位置させ、砥石先端をウェーハのノ
ツチ部に当接させると、ノツチ部の上縁又は下縁が磁石
先端に均一に接触して、一度に面取り加工される。(Function) According to the above means, since the tip of the grindstone has a chevron shape, the center of rotation of the grindstone is positioned above or below the upper and lower surfaces of the wafer, and the tip of the grindstone is placed at the notch of the wafer. When brought into contact with the magnet, the upper or lower edge of the notch uniformly contacts the tip of the magnet and is chamfered at once.
（実施例）
以下、本発明の実施例を図面に基づいて説明する。尚、
以下の説明は面取り角度を４５°とした場合について行
なう。(Example) Hereinafter, an example of the present invention will be described based on the drawings. still,
The following explanation will be made for the case where the chamfer angle is 45 degrees.
１は半導体シリコンウェーハで上下のチャック治具２，
２′で挟持され、その状態で上下動自在とされており、
そのウェーハにおけるノツチ部３の中心線上外方には砥
石４がウェーハ１に対して接離する如（配置されている
。1 is a semiconductor silicon wafer with upper and lower chuck jigs 2,
2', and can freely move up and down in that state.
A grindstone 4 is arranged outwardly on the center line of the notch 3 in the wafer so as to move toward and away from the wafer 1.
砥石４はモータの作動等によって回転する回転体４ａの
外周面にダイヤモンドの焼結体４ｂを固着した今日一般
的に使用されているダイヤモンド砥石で、その先端形状
は略山形に形成されている。山形の角度はノツチ部３の
面取り角度によって決定され、例えばノツチ部３の面取
り角度を４５°とした場合、砥石４における先端山形の
角度は約１１２′となり、そうした砥石４をその回転中
心がノツチ部３の面取り面（表面又は裏面）に対し上方
又は下方に位置させる。The whetstone 4 is a diamond whetstone commonly used today, in which a sintered diamond body 4b is fixed to the outer peripheral surface of a rotary body 4a that rotates by the operation of a motor, etc., and its tip is formed into a substantially mountain shape. The angle of the chevron is determined by the chamfer angle of the notch part 3. For example, if the chamfer angle of the notch part 3 is 45 degrees, the angle of the chevron at the tip of the grinding wheel 4 is approximately 112', and the center of rotation of the whetstone 4 is determined by the chamfer angle of the notch part 3. Position it above or below the chamfered surface (front or back surface) of section 3.
即ち、ノツチ部３の表面縁を面取りする時は砥石４の回
転中心を表面に対し４５°の仰角線上に位置させ、ノツ
チ部３の裏面縁を面取りする時は砥石４の回転中心が上
縁面取りの場合と対称の位置となるようにする。又、上
記のチャック治具の２゜２′で挾持したウェーハ１と、
砥石４との位［調整は砥石４のに上下動を止めウェーハ
１を保持したチャック治具２．２′を上下させて行なう
が、或いはその逆の形態とするも勿論自由であり、ウェ
ーハ１のノツチ部３に対して接触する段階で上述の位Ｗ
ｉｌｌ係にあればよいものである。That is, when chamfering the surface edge of the notch portion 3, the center of rotation of the grindstone 4 is located on a 45° elevation angle line with respect to the surface, and when chamfering the back surface edge of the notch portion 3, the center of rotation of the whetstone 4 is located on the upper edge. The position should be symmetrical to that of the chamfer. In addition, the wafer 1 held at 2°2′ of the chuck jig mentioned above,
The position of the grinding wheel 4 is adjusted by stopping the vertical movement of the grinding wheel 4 and moving the chuck jig 2.2' holding the wafer 1 up and down, but it is of course free to do the opposite. At the stage of contacting the notch portion 3 of the
It would be good to have it in the ill section.
更に、砥石４はウェーハ１に対し所定の位Ｉｌｌ係を保
持したまま前後摺動してウェーハ１のノツチ部３に接離
するようにする。Further, the grindstone 4 is slid back and forth while maintaining a predetermined position relative to the wafer 1 so as to approach and separate from the notch portion 3 of the wafer 1.
以上の構成により、ウェーハ１と砥石４とを所定の位１
［１ｎ係に保持し、砥石４を摺動させてウェーハ１のノ
ツチ部３の上側周縁又は下側周縁に先端の山形を均一に
接触させ、砥石４を回転させることによりノツチ部３の
上側周縁及び下側周縁を一度に均一の角度に面取りする
ことが出来る。With the above configuration, the wafer 1 and the grindstone 4 are placed at a predetermined position.
[1n position, slide the whetstone 4 to bring the chevron of the tip into uniform contact with the upper or lower periphery of the notch 3 of the wafer 1, and rotate the whetstone 4 to sharpen the upper periphery of the notch 3. And the lower peripheral edge can be chamfered at a uniform angle all at once.
（発明の効果）
本発明の加工方法は、以上詳述した如くチャック治具で
挟持したウェーハにおけるノツチ部の中心線上に、先端
形状が山形をなした砥石の砥石厚の中心線を一致させ、
且つ砥石の回転中心をつ工−ハの水平面に対し上方又は
下方に位置させて回転し、ノツチ部に当接させるように
したものであるから、砥石をノツチ部に当接することに
より、ノツチ部の周縁全域は砥石表面に対して一度に接
触して、周縁全域が所定の角度に一度に面取り加工され
る。(Effects of the Invention) As described in detail above, the processing method of the present invention includes aligning the center line of the thickness of the grindstone of the grindstone having a chevron-shaped tip with the center line of the notch portion of the wafer held by the chuck jig,
In addition, the center of rotation of the whetstone is positioned above or below the horizontal plane of the machining tool so that it rotates and comes into contact with the notch. The entire peripheral edge of the grinding wheel is brought into contact with the grinding wheel surface at once, and the entire peripheral edge is chamfered at a predetermined angle at once.
又、ウェーハに対し砥石の回転中心を相対的に上方又は
下方に位置させることによってノツチ部の上側周縁、及
び下側周縁を面取り加工することが出来る。Furthermore, by positioning the rotation center of the grindstone above or below relative to the wafer, the upper and lower peripheral edges of the notch portion can be chamfered.
更に、ウェーハの表面（上側）又は裏面（下側）と、砥
石の回転中心との角度及び砥石の先端山形の角度を変え
ることによってノツチ部の面取り角度を自由に変えるこ
とが出来る。Furthermore, by changing the angle between the front surface (upper side) or back surface (lower side) of the wafer and the center of rotation of the grindstone and the angle of the chevron at the tip of the grindstone, the chamfering angle of the notch portion can be freely changed.
依って、従来面取り加工を施こし得なかつたシリコン、
ＧＧＧ 、リチウムタンタレートなどのウェーハのノ
ツチ部を簡単に面取り加工し得る方法を提供できる。Therefore, silicon, which could not be chamfered in the past,
It is possible to provide a method for easily chamfering the notch portion of a wafer such as GGG or lithium tantalate.
図面は本発明方法を示す説明図で、第１図はノツチ部の
上側周縁を加工する状態の一部切欠正面図、第２図は同
平面図、第３図はノツチ部の下側周縁を加工する状態の
一部切欠正面図である。
図中、
１：ウェーハ ２．２’ ：チャック治具３：ノ
ッチ部 ４：砥石
特許出願人 信越エンジニアリング株式会社The drawings are explanatory diagrams showing the method of the present invention, in which Fig. 1 is a partially cutaway front view of the upper periphery of the notch being machined, Fig. 2 is a plan view of the same, and Fig. 3 is the lower periphery of the notch. FIG. 3 is a partially cutaway front view in a state of processing. In the figure, 1: Wafer 2.2': Chuck jig 3: Notch portion 4: Grinding wheel patent applicant Shin-Etsu Engineering Co., Ltd.
Claims (1)
心線上に、先端形状が山形をなした砥石の砥石厚の中心
線を一致させ、且つ砥石の回転中心をウェーハの水平面
に対し上方又は下方に位置させて回転し、ノッチ部に当
接してノッチ部の周縁を一度に所定角度に面取りするこ
とを特徴とする半導体ウェーハにおけるノッチ部の面取
り方法。The center line of the grinding wheel thickness of the grinding wheel having a chevron-shaped tip is aligned with the center line of the notch portion of the wafer held by the chuck jig, and the center of rotation of the grinding wheel is positioned above or below with respect to the horizontal plane of the wafer. 1. A method for chamfering a notch in a semiconductor wafer, which comprises rotating the notch and chamfering the periphery of the notch at a predetermined angle at a time by contacting the notch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62078766A JP2571573B2 (en) | 1987-03-30 | 1987-03-30 | Method for chamfering a notch in a semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62078766A JP2571573B2 (en) | 1987-03-30 | 1987-03-30 | Method for chamfering a notch in a semiconductor wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63244611A true JPS63244611A (en) | 1988-10-12 |
| JP2571573B2 JP2571573B2 (en) | 1997-01-16 |
Family
ID=13671025
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62078766A Expired - Fee Related JP2571573B2 (en) | 1987-03-30 | 1987-03-30 | Method for chamfering a notch in a semiconductor wafer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2571573B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287523A (en) * | 1988-09-26 | 1990-03-28 | Shin Etsu Handotai Co Ltd | Method and equipment for bevelling semiconductor wafer notch |
| JPH04364727A (en) * | 1991-06-12 | 1992-12-17 | Shin Etsu Handotai Co Ltd | Method and apparatus for chamfering wafer notch |
-
1987
- 1987-03-30 JP JP62078766A patent/JP2571573B2/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0287523A (en) * | 1988-09-26 | 1990-03-28 | Shin Etsu Handotai Co Ltd | Method and equipment for bevelling semiconductor wafer notch |
| JPH04364727A (en) * | 1991-06-12 | 1992-12-17 | Shin Etsu Handotai Co Ltd | Method and apparatus for chamfering wafer notch |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2571573B2 (en) | 1997-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |