JPS61114813A - Cutting method - Google Patents

Cutting method

Info

Publication number
JPS61114813A
JPS61114813A JP23499584A JP23499584A JPS61114813A JP S61114813 A JPS61114813 A JP S61114813A JP 23499584 A JP23499584 A JP 23499584A JP 23499584 A JP23499584 A JP 23499584A JP S61114813 A JPS61114813 A JP S61114813A
Authority
JP
Japan
Prior art keywords
cutting
wafer
inner peripheral
cut
diamond blade
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23499584A
Other languages
Japanese (ja)
Inventor
敏 松井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Via Mechanics Ltd
Original Assignee
Hitachi Seiko Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Seiko Ltd filed Critical Hitachi Seiko Ltd
Priority to JP23499584A priority Critical patent/JPS61114813A/en
Publication of JPS61114813A publication Critical patent/JPS61114813A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/003Multipurpose machines; Equipment therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/028Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔発明の利用分野〕 工工数を低減させる切−一に関する。[Detailed description of the invention] [Field of application of the invention] This article relates to a method for reducing man-hours.

〔発明の背景〕[Background of the invention]

従来、シリコン単結晶のような硬脆材料をウェハに切断
する方法として、第4図に示すように。
Conventionally, a method of cutting a hard and brittle material such as a silicon single crystal into wafers is shown in FIG.

内周刃ダイヤモンドブレード1を回転させつつ被削材4
に切込ませて切断する方法が用いられている。
The workpiece 4 is rotated while the inner peripheral diamond blade 1 is rotated.
A method of cutting by cutting is used.

この方法では、内周刃ダイヤモンドブレード1の張り方
やブレード2の材質の不均一、内周刃部3の真円度誤差
、内周刃部3の中心と回転中心との偏心、内周刃部3の
切れ味の不均一、切断時の切断抵抗の大きな変化、など
により、切断されたウェハにそりが発生する。
In this method, the tension of the inner peripheral diamond blade 1, the unevenness of the material of the blade 2, the roundness error of the inner peripheral blade part 3, the eccentricity between the center of the inner peripheral blade part 3 and the center of rotation, the inner peripheral diamond blade Warpage occurs in the cut wafer due to non-uniform sharpness of the portion 3, large changes in cutting resistance during cutting, and the like.

このため切断されたウェハは一般に、ラッピング、研削
などの後工程により仕上加工が施されるが、ラッピング
においては、第5図に示すように上下ラップ定盤5,6
により、ウェハ7のそりが加圧矯正された状態で加工さ
れるため、加工後加工圧力を解除するとそりは原状に修
復し、改善されない。
For this reason, the cut wafer is generally subjected to finishing processing in post-processes such as lapping and grinding, but in lapping, as shown in FIG.
As a result, the warpage of the wafer 7 is processed in a state in which the warpage is corrected by pressure, so when the processing pressure is released after processing, the warp is restored to its original state and is not improved.

また、研削においては、第6図に示すようにウェハ7を
真空チャック8に吸着して加工する方法が一般的である
が、やはり吸引力によりウェハ7のそりが矯正された状
態で加工されるため、加工後そりは修復して改善されな
い。
Furthermore, in grinding, as shown in Fig. 6, the wafer 7 is generally processed by suctioning it to a vacuum chuck 8, but the wafer 7 is processed after its warpage is corrected by the suction force. Therefore, the warpage cannot be improved by repairing it after processing.

このように、切断加工で発生したそりは後工程での修正
が極めて困難で、ウェハの最終精度を悪くするという欠
点があった。
As described above, it is extremely difficult to correct the warpage that occurs during the cutting process in a subsequent process, which has the disadvantage of impairing the final accuracy of the wafer.

〔発明の目的〕[Purpose of the invention]

本発明の目的は、上記した切断加工の欠点を除き、そり
の少ない切断方法を提供することにある。
An object of the present invention is to provide a cutting method that eliminates the above-mentioned drawbacks of cutting and causes less warpage.

〔発明の概要〕[Summary of the invention]

上記目的を達成するため、本発明では切断前の剛性のあ
る状態で切断すべき材料の端面を平担に仕上げ、その後
、内周刃ダイヤモンドブレードにより切断加工を行うよ
うにしたことを特徴とする。
In order to achieve the above object, the present invention is characterized in that the end face of the material to be cut is flattened in a rigid state before cutting, and then the cutting process is performed using an inner peripheral diamond blade. .

〔発明の実施例〕[Embodiments of the invention]

以下、本発明を第1図により説明する。 The present invention will be explained below with reference to FIG.

第1図において、4はウェハに加工すべき被削材、1は
内周刃ダイヤモンドブレード、9は内周刃ダイヤモンド
ブレード1を保持するチャックボデー、10はカップ形
ダイヤモンド砥石である。
In FIG. 1, 4 is a workpiece to be processed into a wafer, 1 is an inner peripheral diamond blade, 9 is a chuck body that holds the inner peripheral diamond blade 1, and 10 is a cup-shaped diamond grindstone.

上記構成において、まずカップ形ダイヤモンド砥石lO
が回転しながら図に右いて下方に送られ。
In the above configuration, first, the cup-shaped diamond grinding wheel lO
is rotated to the right of the figure and sent downward.

被削材4の端面11を研削する。つづいて、内周刃ダイ
ヤモンドブレード1が回転しながら図の下方に送られ、
被削材4の一部がウェハ7に切断される。
The end face 11 of the workpiece 4 is ground. Next, the inner peripheral diamond blade 1 is sent downward in the figure while rotating.
A portion of the workpiece 4 is cut into wafers 7.

このように加工することにより、内周刃ダイヤモンドブ
レード1によるウェハ7の片側の切断面は、従来技術と
同様に平担度誤差があっても、力で、かつ、剛性の高い
カップ形ダイヤモンド砥石−10により加工されている
ので、高精度な平担面に加工されている。
By processing in this way, the cut surface of one side of the wafer 7 by the inner peripheral diamond blade 1 can be cut using a cup-shaped diamond grinding wheel with high force and high rigidity, even if there is a flatness error as in the conventional technology. -10, so it is processed into a highly accurate flat surface.

このように1本発明によれば、後工程での加工基準とな
り得る高精度な面が、カップ形ダイヤモンド砥石10に
より形成されているので、第2図。
As described above, according to the present invention, the cup-shaped diamond grindstone 10 forms a highly accurate surface that can serve as a processing reference in the subsequent process.

第3図のように、ラッピングや研削を行うことにより、
この基準面によって、他の面が修正され、そりのない高
精度なウェハを得ることができる。
As shown in Figure 3, by lapping and grinding,
With this reference surface, other surfaces are corrected, and a highly accurate wafer without warpage can be obtained.

上記実施例ではカップ形ダイヤモンド砥石10と内周刃
ダイヤモンドブレード1を別々に移動させたが、カップ
形ダイヤモンド砥石10を内周刃ダイヤモンドブレード
1に対して若干先行させて、両者を同時に移動させても
よい。このとき被削材4を移動させて加工してもよい。
In the above embodiment, the cup-shaped diamond grinding wheel 10 and the inner diamond blade 1 were moved separately, but the cup-shaped diamond grinding wheel 10 was moved slightly ahead of the inner diamond blade 1 and both were moved at the same time. Good too. At this time, the workpiece 4 may be moved and processed.

また、上記実施例では被削材4を停止させた状態で加工
したが、被削材5を回転しながら加工してもよい。
Further, in the above embodiment, the work material 4 was machined while being stopped, but the work material 5 may be machined while rotating.

〔発明の効果〕〔Effect of the invention〕

以上の如く1本発明によれば、ウェハの一面が高精度な
基準面となるので、他面の平担度誤差が後工程で修正可
能となり、そりの少ない高精度なウェハが得られるとい
う効果がある。
As described above, according to the present invention, since one surface of the wafer becomes a highly accurate reference surface, the flatness error on the other surface can be corrected in the subsequent process, and a highly accurate wafer with less warpage can be obtained. There is.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明による切断方法を示す模式図、第2図、
第3図は本発明により切断されたウェハの仕上工程を示
す模式図、第4図は従来技術による切断方法を示す模式
図、第5図、第6図は従来技術により切断されたウェハ
の仕上工程を示す模式図である。
FIG. 1 is a schematic diagram showing the cutting method according to the present invention, FIG.
FIG. 3 is a schematic diagram showing the finishing process of a wafer cut by the present invention, FIG. 4 is a schematic diagram showing the cutting method by the conventional technique, and FIGS. 5 and 6 are the finishing steps of the wafer cut by the conventional technique. It is a schematic diagram showing a process.

Claims (1)

【特許請求の範囲】[Claims]  内周刃ダイヤモンドブレードを用いて、硬脆材料等の
被削材を切断する方法において、被削材の端面を平らに
研削し、その後、内周刃ダイヤモンドブレードで被削材
を薄片に切断することを特徴とする切断方法。
In a method of cutting work materials such as hard and brittle materials using an inner peripheral diamond blade, the end face of the work material is ground flat, and then the work material is cut into thin pieces using an internal peripheral diamond blade. A cutting method characterized by:
JP23499584A 1984-11-09 1984-11-09 Cutting method Pending JPS61114813A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23499584A JPS61114813A (en) 1984-11-09 1984-11-09 Cutting method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23499584A JPS61114813A (en) 1984-11-09 1984-11-09 Cutting method

Publications (1)

Publication Number Publication Date
JPS61114813A true JPS61114813A (en) 1986-06-02

Family

ID=16979496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23499584A Pending JPS61114813A (en) 1984-11-09 1984-11-09 Cutting method

Country Status (1)

Country Link
JP (1) JPS61114813A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6296400A (en) * 1985-10-23 1987-05-02 Mitsubishi Metal Corp Production of wafer
DE3908153A1 (en) * 1988-03-11 1989-09-21 Mitsubishi Metal Corp Internally effective cutting disc
JPH01238906A (en) * 1988-03-22 1989-09-25 Disco Abrasive Syst Ltd Method and apparatus for slicing wafer from semiconductor material
US4894956A (en) * 1987-10-29 1990-01-23 Tokyo Semitsu Co., Ltd. Apparatus and method for slicing a wafer
US5218948A (en) * 1988-03-11 1993-06-15 Mitsubishi Kinzoku Kabushiki Kaisha Inside diameter blade
JP2007250962A (en) * 2006-03-17 2007-09-27 Disco Abrasive Syst Ltd Manufacturing method of wafer

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6296400A (en) * 1985-10-23 1987-05-02 Mitsubishi Metal Corp Production of wafer
JPH0429640B2 (en) * 1985-10-23 1992-05-19
US4894956A (en) * 1987-10-29 1990-01-23 Tokyo Semitsu Co., Ltd. Apparatus and method for slicing a wafer
DE3908153A1 (en) * 1988-03-11 1989-09-21 Mitsubishi Metal Corp Internally effective cutting disc
US5218948A (en) * 1988-03-11 1993-06-15 Mitsubishi Kinzoku Kabushiki Kaisha Inside diameter blade
JPH01238906A (en) * 1988-03-22 1989-09-25 Disco Abrasive Syst Ltd Method and apparatus for slicing wafer from semiconductor material
JP2007250962A (en) * 2006-03-17 2007-09-27 Disco Abrasive Syst Ltd Manufacturing method of wafer

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