JPH0613173B2 - Wafer manufacturing equipment - Google Patents
Wafer manufacturing equipmentInfo
- Publication number
- JPH0613173B2 JPH0613173B2 JP3018085A JP1808591A JPH0613173B2 JP H0613173 B2 JPH0613173 B2 JP H0613173B2 JP 3018085 A JP3018085 A JP 3018085A JP 1808591 A JP1808591 A JP 1808591A JP H0613173 B2 JPH0613173 B2 JP H0613173B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor ingot
- wafer
- cutting
- grindstone
- grinding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge
Description
【0001】[0001]
【産業上の利用分野】この発明は半導体の製造工程にお
いて、半導体の材料を薄片状のウエハーに切断するウエ
ハーの製造装置に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer manufacturing apparatus for cutting a semiconductor material into flaky wafers in a semiconductor manufacturing process.
【0002】[0002]
【従来の技術】従来、シリコン等の材料(半導体インゴ
ットという)をウエハーに切断するには、主として高速
回転する内周刃に、半導体インゴットを押し付ける方法
によっていたが、切断刃の保持方法、両刃面の切断性能
のアンバランス、クーラント、風圧の不均一等の原因に
より切断面の平面度、従って切断されたウエハーの面精
度を上げることが困難であった。特に近来、生産効率を
向上させるために半導体インゴットの径を大きくする、
いわゆる、大口径化の技術的要請が強いが、大口径化す
る程、これに伴ってウエハーの両面のそり(平面度誤
差)が大となる点が問題になってきている。また、ウエ
ハーのそりが大きく、面精度が悪いと、後工程の研削、
ラッピング加工における修正、仕上げに多大の工数と経
費と有し、必ずしも満足な面精度が得られなかった。2. Description of the Related Art Conventionally, in order to cut a material such as silicon (referred to as a semiconductor ingot) into a wafer, a semiconductor ingot is mainly pressed against an inner peripheral blade that rotates at a high speed. It was difficult to improve the flatness of the cut surface, and hence the surface accuracy of the cut wafer, due to imbalance in cutting performance, coolant, non-uniform wind pressure, and the like. Especially in recent years, the diameter of the semiconductor ingot is increased to improve the production efficiency.
There is a strong technical demand for increasing the diameter, but as the diameter increases, the warp (flatness error) on both sides of the wafer increases, which is becoming a problem. Also, if the wafer warpage is large and the surface accuracy is poor, grinding in the post process,
A large number of man-hours and costs are required for the correction and finishing in the lapping process, and a satisfactory surface accuracy cannot always be obtained.
【0003】[0003]
【発明の概要】本発明は、少なくともウエハーの片面の
平面度を飛躍的に改善する方法並びに装置を提供するも
のである。本発明は、スピンドルに取り付けられた内周
刃で半導体インゴットからウエハーを切断するスライシ
ング機の切断機能に、前記内周刃による半導体インゴッ
トの切込み位置より先行させた状態で半導体インゴット
の端面を研削する砥石をスピンドルの内部に付加し、即
ち、1台の機械で切断加工と半導体インゴットの端面研
削加工を行い、切断されたウエハーの片面の平面度を高
精度に仕上げることを可能とするものである。また、半
導体インゴットの平面研削は切断と同時に進行するの
で、切断工程と研削工程とが夫々独立している場合と単
純に比較して約1/2に加工時間を短縮できる。SUMMARY OF THE INVENTION The present invention provides a method and apparatus for dramatically improving the flatness of at least one side of a wafer. The present invention grinds the end face of a semiconductor ingot in a state where the cutting function of a slicing machine for cutting a wafer from a semiconductor ingot by an inner peripheral blade attached to a spindle precedes the cutting position of the semiconductor ingot by the inner peripheral blade. It is possible to add a grindstone inside the spindle, that is, perform cutting work and end face grinding work of a semiconductor ingot with one machine to finish the flatness of one side of the cut wafer with high accuracy. . Further, since the surface grinding of the semiconductor ingot proceeds at the same time as the cutting, the processing time can be reduced to about 1/2 as compared with the case where the cutting process and the grinding process are independent.
【0004】[0004]
以下、本発明のウエハー製造装置の実施例を図面を参照
して説明する。図1に、内周刃のブレードを中空スピン
ドルに取付けた横型スライシング機に適用した第1実施
例を示す。図において、半導体インゴット1は、中空ス
ピンドル3に取付けられ、高速回転する内周刃のブレー
ド2に対して図示しない保持機構、送り機構により、矢
印A方向に移動して薄片状のウエハーに切断される。図
に於いて、横型スライシング機に於いて、内周刃のブレ
ード2は高速回転する中空スピンドル3に張設され、高
速回転される。半導体インゴット1は図示しない保持機
構、送り機構により、矢印A方向に移動して薄片状のウ
エハーに切断される。一方、横型スライシング機の同一
機上の中空スピンドル3内に砥石軸5Aが中空スピンド
ル3と同軸方向に配置され、砥石軸5Aの先端に砥石5
が設けられる。ウエハー切断時半導体インゴット1の端
面4に対して、平面研削用の回転する砥石5を当て、半
導体インゴット1を矢印A方向に移動させると、まず端
面4が砥石5によって研削され、次にブレード2が半導
体インゴット1に切り込んでウエハーに切断する。An embodiment of a wafer manufacturing apparatus of the present invention will be described below with reference to the drawings. FIG. 1 shows a first embodiment applied to a horizontal slicing machine in which a blade of an inner peripheral blade is attached to a hollow spindle. In the figure, a semiconductor ingot 1 is attached to a hollow spindle 3 and moved in the direction of arrow A by a holding mechanism and a feed mechanism (not shown) with respect to a blade 2 of an inner peripheral blade that rotates at high speed and cut into a thin wafer. It In the figure, in a horizontal slicing machine, a blade 2 of an inner peripheral blade is stretched around a hollow spindle 3 which rotates at high speed and is rotated at high speed. The semiconductor ingot 1 is moved in the direction of arrow A by a holding mechanism and a feeding mechanism (not shown) to be cut into a thin wafer. On the other hand, a grindstone shaft 5A is arranged coaxially with the hollow spindle 3 in the hollow spindle 3 on the same machine of the horizontal slicing machine, and the grindstone 5A is attached to the tip of the grindstone shaft 5A.
Is provided. At the time of wafer cutting, a rotating grindstone 5 for surface grinding is applied to the end surface 4 of the semiconductor ingot 1 and the semiconductor ingot 1 is moved in the direction of arrow A. First, the end surface 4 is ground by the grindstone 5, and then the blade 2 Cut into a semiconductor ingot 1 and cut into wafers.
【0005】その際、切断されるウエハーに欠けや割れ
やひびが生じないように、砥石5で研削されている部分
にはブレード2の切り込み先端が達しないようにブレー
ド2と砥石5を配設する。即ち、砥石5による半導体イ
ンゴット端面の研削位置は、ブレード2による半導体イ
ンゴットの切込み位置より先行させ、ブレード2による
半導体インゴットの切込み位置は半導体インゴット端面
の研削位置より常に遅れてなされる。端面研削が終了し
た所で砥石5は後退(図では右方向に移動)し、半導体
インゴット1も原位置に復帰して次の加工サイクルに入
る。この方式では、半導体インゴット1の端面研削と切
断が並行して、ほぼ同時に行えるので、ロス時間がな
く、極めて能率的である。At this time, the blade 2 and the grindstone 5 are arranged so that the cutting tip of the blade 2 does not reach the portion ground by the grindstone 5 so that the wafer to be cut is not chipped, cracked or cracked. To do. That is, the grinding position of the end face of the semiconductor ingot by the grindstone 5 precedes the cutting position of the semiconductor ingot by the blade 2, and the cutting position of the semiconductor ingot by the blade 2 is always delayed from the grinding position of the semiconductor ingot end face. When the end surface grinding is completed, the grindstone 5 retracts (moves to the right in the figure), the semiconductor ingot 1 also returns to the original position, and the next processing cycle starts. In this method, the end face grinding and cutting of the semiconductor ingot 1 can be performed in parallel and almost at the same time, so that there is no loss time and it is extremely efficient.
【0006】本発明の装置は、この実施例に限らず、縦
型形式のスライシング機にも適用することができる。The apparatus of the present invention can be applied not only to this embodiment but also to a vertical type slicing machine.
【0007】[0007]
【発明の効果】以上詳述したように、本発明を採用する
ことにより、同一機上で、端面研削機構を付加する以外
は、すべてスライシング機の機構を利用して、半導体イ
ンゴットの取付け等の段取り替えを要せず、切断加工と
同時に半導体インゴットの端面を高精度に研削すること
が可能となるので、切断工程と研削工程とが夫々独立し
ている場合と単純に比較して約1/2に加工時間を短縮
できる。また、半導体インゴット端面の平面度の測定管
理が不要となり、切断されたウエハーの品質、即ち、片
面の平面度を飛躍的に向上させることができる。更に、
後工程の工数、経費等を著しく削減でき、生産性を高め
ることができる等多大の効果を得ることができる。ま
た、砥石の研削位置が内周刃の切断位置より先行してい
るので、切断中のウエハーに割れ、欠け等が生じない。As described in detail above, by adopting the present invention, except for the addition of the end face grinding mechanism on the same machine, the mechanism of the slicing machine is used for mounting the semiconductor ingot, etc. Since it is possible to grind the end face of the semiconductor ingot with high precision at the same time as the cutting process without the need for setup change, it is about 1 / th compared to the case where the cutting process and the grinding process are independent. The processing time can be shortened to 2. Further, it is not necessary to manage the flatness of the end face of the semiconductor ingot, and the quality of the cut wafer, that is, the flatness of one face can be dramatically improved. Furthermore,
The man-hours and costs of the subsequent steps can be remarkably reduced, and the productivity can be improved, which is a great effect. Further, since the grinding position of the grindstone precedes the cutting position of the inner peripheral blade, the wafer being cut is not cracked or chipped.
【図1】図1は本発明の実施例の機構説明図FIG. 1 is an explanatory view of a mechanism of an embodiment of the present invention.
1…半導体インゴット 2…ブレード 4…端面 5…端面研削砥石 1 ... Semiconductor ingot 2 ... Blade 4 ... End surface 5 ... End grinding wheel
Claims (1)
て半導体材料を薄片状に切断するウエハー切断装置に於
いて、 前記スピンドルは中空に形成されると共に、前記スピン
ドルの内部でスピンドルと同軸方向に砥石軸を配置し、
この砥石軸の先端に前記内周刃による半導体材料の切込
み位置より先行させた状態で半導体材料の端面を研削す
る砥石を取り付けたことを特徴とするウエハー製造装
置。1. A wafer cutting apparatus for attaching an inner peripheral blade to a rotating spindle to cut a semiconductor material into thin pieces, wherein the spindle is formed hollow and is coaxial with the spindle inside the spindle. Place the wheel axis,
A wafer manufacturing apparatus, wherein a grindstone for grinding an end surface of a semiconductor material is attached to a tip of the grindstone shaft in a state of being advanced from a cutting position of the semiconductor material by the inner peripheral blade.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3018085A JPH0613173B2 (en) | 1991-02-08 | 1991-02-08 | Wafer manufacturing equipment |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3018085A JPH0613173B2 (en) | 1991-02-08 | 1991-02-08 | Wafer manufacturing equipment |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22935684A Division JPS61106207A (en) | 1984-10-31 | 1984-10-31 | Manufacture of wafer |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH04211907A JPH04211907A (en) | 1992-08-03 |
JPH0613173B2 true JPH0613173B2 (en) | 1994-02-23 |
Family
ID=11961812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3018085A Expired - Lifetime JPH0613173B2 (en) | 1991-02-08 | 1991-02-08 | Wafer manufacturing equipment |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0613173B2 (en) |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2382257A (en) | 1943-04-21 | 1945-08-14 | Albert Ramsay | Manufacture of piezoelectric oscillator blanks |
-
1991
- 1991-02-08 JP JP3018085A patent/JPH0613173B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2382257A (en) | 1943-04-21 | 1945-08-14 | Albert Ramsay | Manufacture of piezoelectric oscillator blanks |
Also Published As
Publication number | Publication date |
---|---|
JPH04211907A (en) | 1992-08-03 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
EXPY | Cancellation because of completion of term |