JPH04211907A - Manufacturing device of wafer - Google Patents
Manufacturing device of waferInfo
- Publication number
- JPH04211907A JPH04211907A JP1808591A JP1808591A JPH04211907A JP H04211907 A JPH04211907 A JP H04211907A JP 1808591 A JP1808591 A JP 1808591A JP 1808591 A JP1808591 A JP 1808591A JP H04211907 A JPH04211907 A JP H04211907A
- Authority
- JP
- Japan
- Prior art keywords
- grindstone
- wafer
- semiconductor ingot
- grinding
- cut
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- 238000005520 cutting process Methods 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 17
- 230000007246 mechanism Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D1/00—Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
- B28D1/003—Multipurpose machines; Equipment therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
- B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
- B28D5/028—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a ring blade having an inside cutting edge
Abstract
Description
【産業上の利用分野】この発明は半導体の製造工程にお
いて、半導体の材料を薄片状のウエハーに切断するウエ
ハーの製造装置に係るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer manufacturing apparatus for cutting semiconductor material into thin wafers in a semiconductor manufacturing process.
【従来の技術】従来、シリコン等の材料（半導体インゴ
ットという）をウエハーに切断するには、主として高速
回転する内周刃に、半導体インゴットを押し付ける方法
によっていたが、切断刃の保持方法、両刃面の切断性能
のアンバランス、クーラント、風圧の不均一等の原因に
より切断面の平面度、従って切断されたウエハーの面精
度を上げることが困難であった。特に近来、生産効率を
向上させるために半導体インゴットの径を大きくする、
いわゆる、大口径化の技術的要請が強いが、大口径化す
る程、これに伴ってウエハーの両面のそり（平面度誤差
）が大となる点が問題になってきている。また、ウエハ
ーのそりが大きく、面精度が悪いと、後工程の研削、ラ
ッピング加工における修正、仕上げに多大の工数と経費
と有し、必ずしも満足な面精度が得られなかった。[Prior Art] Conventionally, in order to cut materials such as silicon (referred to as semiconductor ingots) into wafers, the semiconductor ingot was mainly pressed against a high-speed rotating internal blade. It has been difficult to improve the flatness of the cut surface and, therefore, the surface precision of the cut wafer due to unbalanced cutting performance, uneven coolant and wind pressure, and other causes. Especially in recent years, the diameter of semiconductor ingots has been increased to improve production efficiency.
There is a strong technical demand for a larger diameter, but the problem is that the larger the diameter, the greater the warpage (flatness error) on both sides of the wafer. Further, if the wafer has a large warpage and the surface precision is poor, a large amount of man-hours and expense are required for post-process grinding, correction in lapping, and finishing, and a satisfactory surface precision cannot always be obtained.
【発明の概要】本発明は、少なくともウエハーの片面の
平面度を飛躍的に改善する方法並びに装置を提供するも
のである。本発明は、半導体インゴットからウエハーを
切断するスライシング機の切断機能に半導体インゴット
の端面を平面研削する機能を付加し、即ち、１台の機械
で切断加工と半導体インゴットの端面研削加工を行い、
切断されたウエハーの片面の平面度を高精度に仕上げる
ことを可能とするもので、半導体インゴットの端面研削
は、切断と同時に進行してもよいし、または、端面研削
と切断とを交互に行ってもよい。SUMMARY OF THE INVENTION The present invention provides a method and apparatus for dramatically improving the flatness of at least one side of a wafer. The present invention adds a function of surface grinding the end face of the semiconductor ingot to the cutting function of a slicing machine that cuts wafers from the semiconductor ingot, that is, performs cutting and end face grinding of the semiconductor ingot with one machine.
This makes it possible to finish the flatness of one side of a cut wafer with high precision. Edge grinding of a semiconductor ingot may proceed at the same time as cutting, or edge grinding and cutting may be performed alternately. It's okay.
【実施例】以下、本発明のウエハー製造装置の実施例を
図面を参照して説明する。図１に、内周刃のブレードを
中空スピンドルに取付けた横型スライシング機に適用し
た第１実施例を示す。図において、半導体インゴット１
は、中空スピンドル３に取付けられ、高速回転する内周
刃のブレード２に対して図示しない保持機構、送り機構
により、矢印Ａ方向に移動して薄片状のウエハーに切断
される。図に於いて、横型スライシング機に於いて、内
周刃のブレード２は高速回転する中空スピンドル３に張
設され、高速回転される。半導体インゴット１は図示し
ない保持機構、送り機構により、矢印Ａ方向に移動して
薄片状のウエハーに切断される。一方、横型スライシン
グ機の同一機上の中空スピンドル３内に砥石軸５Ａが中
空スピンドル３と同軸方向に配置され、砥石軸５Ａの先
端に砥石５が設けられる。ウエハー切断時半導体インゴ
ット１の端面４に対して、平面研削用の回転する砥石５
を当て、半導体インゴット１を矢印Ａ方向に移動させる
と、まず端面４が砥石５によって研削され、次にブレー
ド２が半導体インゴット１に切り込んでウエハーに切断
する。その際、切断されるウエハーに欠けや割れやひび
が生じないように、砥石５で研削されている部分にはブ
レード２の切り込み先端が達しないようにブレード２と
砥石５を配設する。即ち、砥石５による半導体インゴッ
ト端面の研削位置は、ブレード２による半導体インゴッ
トの切込み位置より先行させ、ブレード２による半導体
インゴットの切込み位置は半導体インゴット端面の研削
位置より常に遅れてなされる。端面研削が終了した所で
砥石５は後退（図では右方向に移動）し、半導体インゴ
ット１も原位置に復帰して次の加工サイクルに入る。こ
の方式では、半導体インゴット１の端面研削と切断が並
行して、ほぼ同時に行えるので、ロス時間がなく、極め
て能率的である。本発明の装置は、この実施例に限らず
、縦型形式または外周刃方式のスライシング機にも適用
することができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the wafer manufacturing apparatus of the present invention will be described with reference to the drawings. FIG. 1 shows a first embodiment in which the present invention is applied to a horizontal slicing machine in which an inner peripheral blade is attached to a hollow spindle. In the figure, semiconductor ingot 1
The wafer is attached to a hollow spindle 3, and is moved in the direction of arrow A by a holding mechanism and a feeding mechanism (not shown) against the blade 2, which is an internal cutting edge that rotates at high speed, and is cut into thin wafers. In the figure, in a horizontal slicing machine, a blade 2 of an inner circumferential cutter is stretched around a hollow spindle 3 that rotates at a high speed, and is rotated at a high speed. The semiconductor ingot 1 is moved in the direction of arrow A by a holding mechanism and a feeding mechanism (not shown) and cut into thin wafers. On the other hand, a grindstone shaft 5A is arranged coaxially with the hollow spindle 3 in a hollow spindle 3 on the same horizontal slicing machine, and a grindstone 5 is provided at the tip of the grindstone shaft 5A. A rotating grindstone 5 for surface grinding is applied to the end surface 4 of the semiconductor ingot 1 during wafer cutting.
When the semiconductor ingot 1 is moved in the direction of arrow A, the end face 4 is first ground by the grindstone 5, and then the blade 2 cuts into the semiconductor ingot 1 to cut it into wafers. At this time, the blade 2 and the grindstone 5 are arranged so that the tip of the cut of the blade 2 does not reach the part being ground by the grindstone 5 so as not to chip, crack, or crack the wafer to be cut. That is, the position at which the end face of the semiconductor ingot is ground by the grindstone 5 precedes the position at which the semiconductor ingot is cut by the blade 2, and the position at which the semiconductor ingot is cut by the blade 2 is always delayed from the position at which the end face of the semiconductor ingot is ground. When the end face grinding is completed, the grinding wheel 5 moves backward (moves to the right in the figure), and the semiconductor ingot 1 also returns to its original position to begin the next processing cycle. In this method, end face grinding and cutting of the semiconductor ingot 1 can be performed in parallel and almost simultaneously, so there is no loss of time and it is extremely efficient. The apparatus of the present invention is not limited to this embodiment, but can also be applied to a vertical type or peripheral blade type slicing machine.
【発明の効果】以上詳述したように、本発明を採用する
ことにより、同一機上で、端面研削機構を付加する以外
は、すべてスライシング機の機構を利用して、半導体イ
ンゴットと取付け等の段取り替えを要せず、切断加工と
並行して、または切断加工サイクル中に、半導体インゴ
ットの端面を高精度に研削することが可能となる。従っ
て、半導体インゴット端面の平面度の測定管理が不要と
なり、切断されたウエハーの品質、即ち、片面の平面度
を飛躍的に向上させることができる。また、後工程の工
数、経費等が著しく削減され、生産性を高めることがで
きる等多大の効果が得られる。[Effects of the Invention] As detailed above, by adopting the present invention, all the mechanisms of the slicing machine are used on the same machine, except for the addition of an end-face grinding mechanism, to process semiconductor ingots and attach them. It becomes possible to grind the end face of a semiconductor ingot with high precision in parallel with the cutting process or during the cutting cycle without requiring a setup change. Therefore, it becomes unnecessary to measure and manage the flatness of the end face of the semiconductor ingot, and the quality of the cut wafer, that is, the flatness of one side can be dramatically improved. In addition, the number of man-hours and costs of post-processing can be significantly reduced, productivity can be increased, and other great effects can be obtained.
【図１】図１は本発明の実施例の機構説明図[Fig. 1] Fig. 1 is an explanatory diagram of the mechanism of an embodiment of the present invention.
１…半導体インゴット ２…ブレード ４…端面 ５…端面研削砥石 1...Semiconductor ingot 2...Blade 4...End face 5... End face grinding wheel
Claims (1)
導体材料を薄片状に切断するウエハー製造装置に於いて
、前記スピンドルは中空に形成され、前記スピンドルの
内部でスピンドルと同軸方向に砥石軸を配置すると共に
この砥石軸の先端に切断された半導体材料の端面を研削
する砥石を取付けたことを特徴とするウエハー製造装置1. A wafer manufacturing apparatus in which a cutting blade is attached to a rotating spindle to cut a semiconductor material into thin pieces, wherein the spindle is formed hollow, and a grinding wheel shaft is arranged coaxially with the spindle inside the spindle. A wafer manufacturing apparatus characterized in that a grindstone for grinding an end face of a cut semiconductor material is attached to the tip of the grindstone shaft.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3018085A JPH0613173B2 (en) | 1991-02-08 | 1991-02-08 | Wafer manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3018085A JPH0613173B2 (en) | 1991-02-08 | 1991-02-08 | Wafer manufacturing equipment |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22935684A Division JPS61106207A (en) | 1984-10-31 | 1984-10-31 | Manufacture of wafer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04211907A true JPH04211907A (en) | 1992-08-03 |
| JPH0613173B2 JPH0613173B2 (en) | 1994-02-23 |
Family
ID=11961812
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3018085A Expired - Lifetime JPH0613173B2 (en) | 1991-02-08 | 1991-02-08 | Wafer manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0613173B2 (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2382257A (en) * | 1943-04-21 | 1945-08-14 | Albert Ramsay | Manufacture of piezoelectric oscillator blanks |
-
1991
- 1991-02-08 JP JP3018085A patent/JPH0613173B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2382257A (en) * | 1943-04-21 | 1945-08-14 | Albert Ramsay | Manufacture of piezoelectric oscillator blanks |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0613173B2 (en) | 1994-02-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |