JPH0615634A - Slicing method of wafer - Google Patents

Abstract

PURPOSE:To process an end face of an ingot into a recessed face from during a slicing process. CONSTITUTION:A grinding wheel spindle 16 is constituted rockably freely centering around a point 20 on the center line of an ingot 14. An end face of the ingot 14 is processed into a recessed face by a freely rockable grinding wheel 18 simultaneously with cutting or after the cutting. With this construction, one face of a cut off wafer is formed into the recessed face, through which post-treatment processing becomes easy.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor wafer slicing method, and more particularly to a semiconductor wafer slicing method which is advantageous for post-processing of a slicing wafer.

[0002]

2. Description of the Related Art Semiconductor wafers tend to have a warped shape that is concave upward due to epitaxial processing. Such a warped shape is disadvantageous for post-processing. In addition,
As introduced in Japanese Patent Laid-Open No. 2-139163, it is advantageous that the surface of the semiconductor wafer on which the pattern is not formed has a concave surface on the lower side because it is sucked by the vacuum suction table. Under such circumstances, in Japanese Patent Laid-Open No. 2-139163, a wafer in which the axis of the wafer suction table and the axis of the grindstone are tilted, and in this state, the surface of the wafer of the wafer suction table is made concave by the grindstone The processing method of is proposed.

[0003]

However, the wafer processing method is a processing method after the wafer is once cut, and it is convenient if the end surface of the semiconductor material can be processed into a concave shape in the slicing step. The present invention has been made in view of such circumstances, and an object thereof is to propose a slicing method for a semiconductor wafer in which an end surface of a semiconductor material is processed into a concave shape in a slicing step.

[0004]

SUMMARY OF THE INVENTION According to the present invention, an inner peripheral blade is attached to a rotating hollow spindle, and a grindstone shaft having a grindstone for grinding an end face of a semiconductor material is arranged in the hollow spindle. In a wafer slicing method in which a grinding step and a cutting step are performed at the same time in a state where a grinding position of an end face of a material precedes a cutting position of a semiconductor material by the inner peripheral blade, the grindstone shaft is made of a semiconductor material. It is arranged so that it can swing freely using the point on the shaft center as the swing fulcrum.
In this state, grinding is performed to form the end surface of the semiconductor material into a concave shape.

Further, according to the present invention, an inner peripheral blade is attached to a rotating spindle, a grindstone shaft having a grindstone for grinding an end face of a semiconductor material is arranged outside the spindle, and the end face of the semiconductor material is ground by the grindstone. In the method of slicing a wafer in which both the grinding step for cutting and the step for cutting the semiconductor material into wafers by the inner peripheral blade are alternately repeated, the grindstone shaft is moved to a point on the axis of the semiconductor material. It is characterized in that the end surface of the semiconductor material is formed into a concave shape by arranging it as a fulcrum so that it can swing and grinding in this state.

[0006]

According to the present invention, a grindstone shaft having a grindstone for grinding an end surface of a semiconductor material is arranged in a hollow spindle, and the grindstone shaft is arranged to be swingable about a point on the axis of the semiconductor material as a swing fulcrum. Since the step of grinding and the step of cutting in a state in which the grinding position of the end surface of the semiconductor material by the grindstone precedes the cutting position of the semiconductor material by the inner peripheral blade is performed at the same time,
The end surface of the semiconductor material can be formed into a concave shape in the slicing process.

Further, according to the present invention, a grindstone shaft to which a grindstone for grinding an end face of a semiconductor material is attached is arranged outside a spindle,
A step of grinding the end face of the semiconductor material with the grindstone so that the grindstone shaft swingably uses a point on the axis of the semiconductor material as a swing fulcrum; and a step of cutting the semiconductor material into a wafer by the inner peripheral blade, Both steps are alternately repeated, so that the end surface of the semiconductor material can be formed in a concave shape in the slicing step.

[0008]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A preferred embodiment of a semiconductor wafer slicing method according to the present invention will be described below in detail with reference to the accompanying drawings. In FIG. 1, an inner peripheral blade 12 is stretched on the hollow spindle 10, and the hollow spindle 10 is rotated at high speed. The semiconductor ingot 14 is a holding mechanism (not shown),
The feed mechanism moves in the direction of arrow A, and the inner peripheral blade 12A cuts the wafer into flakes.

A grindstone shaft 16 is rotatably arranged in a hollow spindle 10 on the same machine as the slicing machine.
A grindstone 18 is provided at the tip of 6 and is rotated. Wheel axis 1
6 is arranged on the central axis of the ingot 14 so as to be swingable about a swing fulcrum 20. A rotating grindstone 1 for grinding an end surface with respect to an end surface 6 of a semiconductor ingot 14 when a wafer is cut.
When 8 is applied and the semiconductor ingot 14 is moved in the direction of arrow A, the end face 6 is first ground by the grindstone 18, and then the inner peripheral blade 12A cuts the semiconductor ingot 14 and cuts it into a wafer. At this time, the grindstone 18 swings counterclockwise around the point 20 as the grinding position moves toward the center of the ingot 14, and moves clockwise around the point 20 as it goes to the grinding completed position from the center. The ingot is oscillated and continuously and smoothly oscillated until the grinding start state, and the end surface of the ingot is processed into a concave shape.

At this time, the inner peripheral blade 12A and the grinding stone 12A and the grinding stone are so arranged that the cutting edge of the inner peripheral blade 12A does not reach the portion ground by the grinding stone 18 so that the wafer to be cut is not chipped, cracked or cracked. 18 is provided. That is, the grinding position of the end surface of the semiconductor ingot by the grindstone 18 precedes the cutting position of the semiconductor ingot by the inner peripheral blade 12A, and the cutting position of the semiconductor ingot by the inner peripheral blade 12A is always delayed from the grinding position of the semiconductor ingot end surface. .

When the end surface grinding is completed, the grindstone 18 descends, the semiconductor ingot 14 also returns to its original position, and the next processing cycle starts. In this method, the semiconductor ingot 14
Since the end face grinding and cutting can be performed in parallel and almost at the same time, there is no loss time and it is extremely efficient. FIG. 2 shows a second embodiment according to the present invention.

In the drawing, in the slicing machine, the blade 12 of the inner peripheral blade 12A is a spindle 1 which rotates at high speed.
It is stretched to 0 and rotated at high speed. Semiconductor ingot 14
Is moved in the direction of arrow A by a holding mechanism and a feeding mechanism (not shown) to be cut into a thin wafer. On the same slicing machine, a grindstone shaft 16 is provided close to the outside of the spindle 10 of the blade 12, and an end face grinding stone 18 is provided at the tip of the grindstone shaft 16. The grindstone shaft 16 is swingable about a swing fulcrum 20 as in the first embodiment shown in FIG.

Immediately before the cutting process, the semiconductor ingot 1 is moved to the position of the grindstone 18 as shown by the one-dot chain line in FIG. To do. At this time, the grindstone 18 swings around the fulcrum 20 as in the embodiment of FIG. 1 to process the end surface of the ingot 14 into a concave shape. Next, the semiconductor ingot 14 is moved in the directions of arrows B, C, and D to move the blade 1
The wafer is cut by feeding it to the central opening of No. 2 and feeding it in the direction of arrow A to cut the inner peripheral blade 12A.

Although the end surface of the semiconductor ingot 14 is formed in a concave shape in the above embodiment, it may be formed in a convex shape by the reverse swing motion of the grindstone 18.

[0015]

As described above, according to the wafer slicing method of the present invention, since the end face of the ingot is formed into a concave shape or a convex shape in the wafer slicing process, the work is efficient and Post processing of the wafer is easy.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing a first embodiment of the present invention.

FIG. 2 is an explanatory diagram showing a second embodiment of the present invention.

[Explanation of symbols]

 10 ... Hollow spindle 12 ... Blade 12A ... Inner peripheral blade 14 ... Ingot 16 ... Grindstone axis 18 ... Grindstone 20 ... Oscillating fulcrum

Claims (2)

[Claims] 1. An inner peripheral blade is attached to a rotating hollow spindle, a grindstone shaft having a grindstone attached to grind an end face of a semiconductor material is arranged in the hollow spindle, and a grinding position of the end face of the semiconductor material by the grindstone is set to the above-mentioned position. In a wafer slicing method in which a grinding step and a cutting step are performed simultaneously in a state of being advanced from a cutting position of a semiconductor material by an inner peripheral blade, the grindstone shaft is swung at a point on an axis of the semiconductor material. A method of slicing a wafer, which is swingably arranged as a fulcrum and is ground in this state to form an end surface of a semiconductor material into a concave or convex shape. 2. A grinding step of mounting an inner peripheral blade on a rotating spindle, arranging a grindstone shaft mounted on the outer side of the spindle with a grindstone for grinding an end face of a semiconductor material, and grinding the end face of the semiconductor material by the grindstone. In the method of slicing a wafer, wherein the steps of cutting the semiconductor material into wafers by the inner peripheral blade are alternately repeated, the whetstone shaft is swung with a point on the axis of the semiconductor material as a swing fulcrum. A slicing method for a wafer, which is movably arranged and is ground in this state to form an end surface of a semiconductor material into a concave shape or a convex shape.