JPS63219115A - Manufacture of laminated semiconductor porcelain electronic component - Google Patents
Manufacture of laminated semiconductor porcelain electronic componentInfo
- Publication number
- JPS63219115A JPS63219115A JP62052606A JP5260687A JPS63219115A JP S63219115 A JPS63219115 A JP S63219115A JP 62052606 A JP62052606 A JP 62052606A JP 5260687 A JP5260687 A JP 5260687A JP S63219115 A JPS63219115 A JP S63219115A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- electronic component
- laminated
- semiconductor ceramic
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 54
- 229910052573 porcelain Inorganic materials 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000919 ceramic Substances 0.000 claims description 53
- 239000000843 powder Substances 0.000 claims description 16
- 239000007800 oxidant agent Substances 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 4
- 230000002093 peripheral effect Effects 0.000 claims description 4
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims 1
- 229910002113 barium titanate Inorganic materials 0.000 claims 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims 1
- 238000010304 firing Methods 0.000 description 11
- 239000003795 chemical substances by application Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003985 ceramic capacitor Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 230000007935 neutral effect Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- 101100313164 Caenorhabditis elegans sea-1 gene Proteins 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Thermistors And Varistors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、結晶粒界に絶縁層を設【ブてなる粒界絶縁
型の積層型半導体磁器電子部品の製造方法の改良に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to an improvement in a method for manufacturing a grain boundary insulated laminated semiconductor ceramic electronic component in which an insulating layer is provided at grain boundaries.
［従来の技術］
特開昭５４−５３２４８号は、積層型の半導体磁器コン
デンυ゛の製造グラ法を開示している。ここでは、チタ
ン酸スｉ〜ロンヂウムを主成分どし、これに半導体化剤
として５ｉＯ７、焼結助剤どしてＡ見２０３を含有させ
た材料のシー１−十に、多孔層を形成するためのセラミ
ック・ペース１〜が塗イ■ｉされたものを積層し、還元
雰囲気上で焼成することにより、多孔質層が形成された
半導体磁器を１！：する。得られた半導体磁器を、酸化
銀あるいは酸化銅などの拡散剤を含む分散液中に浸漬し
、それによって多孔質層から拡散剤を含浸させる。さら
に、この半導体磁器を酸化性雰囲気下で焼成することに
より、半導体磁器の結晶粒界に絶縁層を形成する。次に
、たとえば７−ｎやｐ ｂのような低融点金属を溶融さ
せて多孔質層に注入４ることにより、内部電極を形成し
、最後に半導体磁器の外周面に内部電極と接続される外
部電極を付与覆る。[Prior Art] Japanese Patent Application Laid-Open No. 54-53248 discloses a method for manufacturing a laminated semiconductor ceramic capacitor υ'. Here, a porous layer is formed on a sheet 1-1 of a material whose main components are silicon titanate to rhodium, 5iO7 as a semiconductor agent, and A-203 as a sintering agent. The semiconductor porcelain coated with ceramic paste 1~ is laminated and fired in a reducing atmosphere to form a semiconductor porcelain with a porous layer formed. :do. The obtained semiconductor ceramic is immersed in a dispersion containing a diffusing agent such as silver oxide or copper oxide, thereby impregnating the diffusing agent from the porous layer. Furthermore, by firing this semiconductor ceramic in an oxidizing atmosphere, an insulating layer is formed at the grain boundaries of the semiconductor ceramic. Next, an internal electrode is formed by melting a low melting point metal such as 7-n or pb and injecting it into the porous layer.Finally, the internal electrode is connected to the outer peripheral surface of the semiconductor porcelain. Apply and cover the external electrode.
上記した特開昭５４−５３２４． （３号に開示されて
いる製造方法では、粒界に絶縁層を形成するために拡散
物を拡散さけるに際し、多孔質層を利用して拡散させる
ものであるため半導体磁器の内部まで十分に拡散させる
ことができる。The above-mentioned Japanese Patent Publication No. 54-5324. (The manufacturing method disclosed in No. 3 uses a porous layer to prevent diffused substances from diffusing in order to form an insulating layer at the grain boundaries, so they are sufficiently diffused into the interior of the semiconductor ceramic. can be done.
［発明が解決しようとする問題点］
しかしながら、低融点金属により内部電極を構成するも
のであるため、１ｑられた半導体磁器コンアン４ノは耐
熱性の点で難があり、はんだ付１ノに際し内部電極が部
分的に溶融することがあった。[Problems to be Solved by the Invention] However, since the internal electrodes are made of a low-melting point metal, the semiconductor porcelain converter 4, which is manufactured by 1Q, has a problem in terms of heat resistance, and the internal electrodes are The electrode sometimes melted partially.
また、多孔質層を形成し、該多孔質層から拡散剤を拡散
させ、さらに多孔質層に低融点金属を注入することによ
り内部電極を形成するという多数の工程を必要とするた
め、コス［〜が高くつくという問題もあった。In addition, it requires a number of steps, including forming a porous layer, diffusing a diffusing agent from the porous layer, and then forming an internal electrode by injecting a low melting point metal into the porous layer. There was also the problem that ~ was expensive.
よって、この発明の目的は、耐熱性に優れた積層型の半
導体磁器電子部品を比較的簡単な工程で製造し得る方法
を提供することにある。Therefore, an object of the present invention is to provide a method for manufacturing a laminated semiconductor ceramic electronic component with excellent heat resistance through relatively simple steps.
［問題点を解決するための手段］
この発明の半導体磁器電子部品の製造り法では、まず半
導体磁器粉末を主成分とし、これに酸化剤およびガラス
成分を含まけた材料よりなるセラミックグリーンシート
を用意する。このセラミックグリーンシート上に、該セ
ラミックグリーンシートのいずれかの端縁に至るように
導電性ペーストを塗布する。次に、セラミックグリーン
シー１−を複数枚積層してｆｒａ層体を得る。さらに、
この積層体を空気中または酸化性雰囲気下で焼成して半
導体磁器を得る。この半導体磁器の外周面に、上述した
導電性ペース１へにより構成された内部電極に電気的に
接続される外部電極を付ノ）する。[Means for Solving the Problems] In the method for manufacturing semiconductor porcelain electronic components of the present invention, first, a ceramic green sheet made of a material containing semiconductor porcelain powder as a main component and an oxidizing agent and a glass component is prepared. do. A conductive paste is applied onto the ceramic green sheet so as to reach either edge of the ceramic green sheet. Next, a plurality of ceramic green sheets 1- are laminated to obtain a FR layer. moreover,
This laminate is fired in air or in an oxidizing atmosphere to obtain semiconductor ceramics. An external electrode electrically connected to the internal electrode formed by the conductive paste 1 described above is attached to the outer peripheral surface of this semiconductor ceramic.
上記半導体磁器粉末としては、チタン耐ス［〜ロンヂウ
ム系またはヂタン酸バリウム系の半導体磁器粉末を用い
ることができる。これらの半導体磁器粉末は、たとえば
ヂタン酸ストロンチウムに［ｒｚｏ３またはＹ、Ｏｓ＃
の半導体化剤を混合し、１３５０〜１５００℃程度の温
度にて中性または還元性雰囲気中で焼成することにより
５ｒＴｉ０３半導体セラミック体を１ｑ１用途に応じ適
当な大きさに粉砕することにより得られる。As the above-mentioned semiconductor ceramic powder, a titanium stainless steel [~ rhodium-based or barium ditanate-based semiconductor ceramic powder] can be used. These semiconductor porcelain powders are prepared by adding [rzo3 or Y, Os#] to strontium ditanate, for example.
The 5rTi03 semiconductor ceramic body is mixed with a semiconductor forming agent and fired in a neutral or reducing atmosphere at a temperature of about 1350 to 1500°C, and the 5rTi03 semiconductor ceramic body is pulverized into an appropriate size according to the 1q1 use.
この発明では、この半導体磁器粉末に対し、Ｃｕ Ｏ，
Ｂｉ ７０３ 、Ｐｉ ３０＜ 、Ｎａ ２ ＣＯ３，
１ｉ２Ｇ（）ａおよびＭｎ ＣＯ３の１種以上を酸化剤
、！＝Ｌｒ０．０１〜１．５ｆｆｉｆｉ％、Ｓｔ ０７
、Ｆ３２０、およびΔ（，０３からなる群から選択し
た１種以上をガラス成分どじで２〜１５重■％加えで混
合した材料によりセラミックグリーンシートを作成する
。In this invention, CuO,
Bi 703 , Pi 30< , Na 2 CO3,
1i2G()a and one or more of Mn CO3 as an oxidizing agent,! =Lr0.01~1.5ffifi%, St 07
, F320, and Δ(,03) are mixed in an amount of 2% to 15% by weight using a glass component to prepare a ceramic green sheet.
１？ラミックグリーンシート−Ｌに塗布する導電性ペー
ストとしては、八〇やＰ ｄなどの金属粉末に、ワニス
またはガラスフリット等を混合してなるものを用いるこ
とができる。1? The conductive paste to be applied to the lamic green sheet-L may be a mixture of metal powder such as 80 or Pd with varnish, glass frit, or the like.
導電性ペーストの塗布されたセラミックグリーンシート
は積層後、積層方向に加圧することにより相互に圧着さ
せる。After the ceramic green sheets coated with the conductive paste are laminated, they are pressed together by applying pressure in the lamination direction.
上記積層体の焼成は、空気中またはＮ２−Ｏ２雰囲気の
ような酸化性雰囲気下で行なわれる。これは、粒界に上
記酸化剤により酸化層すなわち誘電体層や高抵抗層を形
成するためである。焼成は、９００〜１２００℃程度の
温度で行なわれる。この焼成により、半導体磁器を得る
と同時に、磁器内部に上記導電性ペーストにより内部電
極が形成される。The laminate is fired in air or under an oxidizing atmosphere such as an N2-O2 atmosphere. This is because an oxidized layer, that is, a dielectric layer or a high-resistance layer, is formed at the grain boundaries by the oxidizing agent. Firing is performed at a temperature of about 900 to 1200°C. By this firing, semiconductor ceramics are obtained, and at the same time, internal electrodes are formed inside the ceramics using the conductive paste.
外部電極は、半導体磁器の外周面に、導電性ペーストに
より構成された内部電極に電気的に接続されるように付
与される。外部電極の付与は、めっきあるいは焼イ」け
等の種々の方法で行ない４ｒ：Ｉる。The external electrode is provided on the outer peripheral surface of the semiconductor ceramic so as to be electrically connected to the internal electrode made of conductive paste. The external electrodes can be provided by various methods such as plating or baking.
［作用および発明の効果］
この発明では、半導体磁器粉末に、予め絶縁層を形成す
るための酸化剤と、ガラス成分とを混合してセラミック
グリーンシートを作成し、このセラミックグリーンシー
トを用いて粒界絶縁型の半導体磁器が１ｑられる。よっ
て、粒界に絶縁層を形成するための酸化剤が、焼成前に
均一に分散されているため、酸化剤を分散さけた分散液
に浸消させるような繁雑な工程を行なわずとも、粒界に
確実に絶縁層を形成することがｎＪ （１１：とされて
いる。[Operation and Effects of the Invention] In this invention, a ceramic green sheet is created by mixing semiconductor ceramic powder with an oxidizing agent for forming an insulating layer and a glass component, and this ceramic green sheet is used to form particles. 1q of field-insulated semiconductor porcelain will be sold. Therefore, since the oxidizing agent for forming an insulating layer at the grain boundaries is uniformly dispersed before firing, the grains can be formed without the need for a complicated process such as soaking the oxidizing agent in a dispersion solution. It is said that nJ (11:) is required to reliably form an insulating layer in the field.
のみならず、内部電極は、」−記セラミックグリーンシ
ーｌへ上に￥Ｊ電ペース１−を塗（１１シ、半導体磁器
の焼成と同時に焼成することにより形成される。In addition, the internal electrodes are formed by coating the ceramic green seal 1 with ¥J DEN PACE 1 (11) and firing it simultaneously with the firing of the semiconductor porcelain.
したがって、従来法のような、内部電極形成のｔこめに
低融点金属を注入する工程を必要としないため、工程数
を飛躍的に低減することが可能である。Therefore, unlike the conventional method, there is no need for the step of injecting a low melting point metal during the formation of the internal electrodes, making it possible to dramatically reduce the number of steps.
なお、上記セラミックグリーンシート上にＳｉＯ２、Ｂ
２０ａまたはＡｕｚＯ３’Ｍのガラス成分を含ませるの
は、焼結温度を低くするためであり、それによって導電
ペーストと半導体磁器の同時焼成が可能とされている。In addition, SiO2, B
The purpose of including the glass component of 20a or AuzO3'M is to lower the sintering temperature, thereby making it possible to simultaneously fire the conductive paste and the semiconductor porcelain.
したがって、この発明によれば、比較的簡単な工程で積
層型の半導体磁器電子部品を得ることができる。しかも
、導電性ペーストとして、上述したような八〇やＰｄな
どの通常の貴金属粉末を含むものを用いることができる
ので、耐熱性に優れた積層型の半導体磁器電子部品を得
ることができる。Therefore, according to the present invention, a laminated semiconductor ceramic electronic component can be obtained through a relatively simple process. Moreover, since a conductive paste containing ordinary noble metal powder such as 80 or Pd as described above can be used, a laminated semiconductor ceramic electronic component with excellent heat resistance can be obtained.
この発明は、積層型の半導体磁器コンデンサやバリスタ
等の種々の半導体磁器電子部品の製造に用い１ｑるもの
であることを指摘しておく。It should be pointed out that the present invention can be used for manufacturing various semiconductor ceramic electronic components such as multilayer semiconductor ceramic capacitors and varistors.
［実施例の説明］
実施例１
ＳｒＴｉ０３粉末に、半導体化剤どして微量のＹ２Ｏ３
を加え、１３５０〜１５００℃の温度で、中性または還
元性雰囲気下で焼成を行ない、Ｓｒｒ＋ ０３半導体セ
ラミックスを作製する。この半導体セラミックスを粉砕
することにより、５ｒＴｉｏ、系半導体磁器粉末を得る
。[Description of Examples] Example 1 A trace amount of Y2O3 was added to SrTi03 powder as a semiconducting agent.
is added and fired at a temperature of 1350 to 1500° C. in a neutral or reducing atmosphere to produce Srr+ 03 semiconductor ceramics. By pulverizing this semiconductor ceramic, a 5rTio-based semiconductor ceramic powder is obtained.
上記半導体磁器粉末に、酸化剤どしてＣｕＯ１Ｂｉ２０
５、ＰＩｚＯ＋およびＭ ｎ ＣＯ、ｉを金側で１重量
％、ガラス成分としてＳ：０７、ＢｚＯ３およびＡｕ２
０．を合計で７重量％加えて混合し、さらに有機バイン
ダを加えてセラミックグリーンシー［〜を１ｑる。Adding an oxidizing agent to the above semiconductor porcelain powder, CuO1Bi20
5, PIzO+ and M n CO, i 1% by weight on the gold side, S:07 as glass component, BzO3 and Au2
0. Add and mix a total of 7% by weight, further add an organic binder, and add 1q of ceramic green sea [~].
次に、第１図に示すように、冑られ７．： セラミック
グリーンシート１に、△ｏ、Ｐｄ粉末、ワニスおよびガ
ラスフリットを含む導電性ペースト２を内部電極パター
ンに応じて印刷する。なお、第１図から明らかなように
、最−Ｆ層および最下製のけラミックグリーンシート１
には導電性ペース１へは塗布しく【い。Next, as shown in FIG. : A conductive paste 2 containing ΔO, Pd powder, varnish and glass frit is printed on a ceramic green sheet 1 according to an internal electrode pattern. In addition, as is clear from FIG.
Do not apply to conductive paste 1.
また、中間に積層さＶるセラミックグリーンシート１上
に塗イ１された導電性ペースト２は、交Ｈに対向する端
縁に至るように塗布する。Further, the conductive paste 2 coated on the ceramic green sheet 1 laminated in the middle is applied so as to reach the edge facing the intersection H.
次に、第１図の向ぎのままセラミックグリーンシート１
を積層し、加圧・圧着する。Next, place the ceramic green sheet 1 in the direction shown in Figure 1.
Laminated, pressurized and crimped.
圧着後に、空気中またはＮ、、−０２雰囲気中で一つ−
１０００〜１２００℃の温度で焼成する。この焼成によ
り、セラミックグリーンシー１〜中に含まれていた酸化
剤により３ｒＴｉＯａ半導体結晶表面に酸化層す４１わ
ら絶縁層が形成される。同時に、上記導電性ペースＩ〜
も半導体磁器と同時に焼成され、内部電極が形成される
。After crimping, it is fired at a temperature of -1000 to 1200°C in air or N, -02 atmosphere. By this firing, an oxidized layer and an insulating layer 41 are formed on the surface of the 3rTiOa semiconductor crystal by the oxidizing agent contained in the ceramic green sheets 1 to 4. At the same time, the conductive paste I~
It is also fired at the same time as the semiconductor porcelain to form internal electrodes.
焼成後に、第２図に示すように、外部電極３゜３を付与
することにより、積層型の半導体磁器コンデンサ４を１
ｑる。After firing, as shown in FIG.
qru.
実施例２
実施例１と同様にして、Ｓｒ−■−１０３系半導体磁器
粉末を１ｑる。この半導体磁器粉末に、酸化剤としＴＣ
ｕ Ｏ，Ｎａ ｐ ＣＯ３、ｌ−ｆ ２ ＣＯ３および
ＭｎｃＯａを合泪で０．２重量％、ガラス成分としてＳ
ｔ Ｏ２、Ｂ２０３およびＡｕ２０．を合Ｊ１で７重量
％混合し、この混合材料によりセラミックグリーンシー
トを作製する。Example 2 In the same manner as in Example 1, 1 q of Sr-■-103 semiconductor ceramic powder was prepared. This semiconductor porcelain powder is added with TC as an oxidizing agent.
u O, Na p CO3, l-f 2 CO3 and MncOa at 0.2% by weight, S as glass component
t O2, B203 and Au20. were mixed at a concentration of 7% by weight in a mixture J1, and a ceramic green sheet was produced using this mixed material.
得られたセラミックグリーンシー１へを、複数枚用意し
、実施例１ど同様に導電性ペーストをその上に塗布する
。また、実施例１と同様に積層し、加圧・圧着し、空気
中またはＮ２．−０２雰囲気下で焼成する。焼成は、９
００〜１２００℃の温度で行なう。この焼成により、−
し記酸化剤により５ｒＴｉＱ、半導体結晶粒の表面に高
抵抗層が形成される。A plurality of sheets of the obtained ceramic green sea 1 are prepared, and a conductive paste is applied thereon in the same manner as in Example 1. In addition, the layers were laminated in the same manner as in Example 1, pressurized and crimped, and exposed to air or N2. -02 atmosphere. Firing is 9
It is carried out at a temperature of 00 to 1200°C. By this firing, -
The oxidizing agent forms a high resistance layer on the surface of the 5rTiQ semiconductor crystal grains.
焼成後、実施例１と同様に外部電極を付与することによ
り、積層型の半導体磁器バリスタを得ることができる。After firing, external electrodes are applied in the same manner as in Example 1 to obtain a laminated semiconductor ceramic varistor.
第１図は、この発明の一実施例を説明する１、−めの斜
視図であり、積層するセラミックグリーンシートおよび
その上に塗布される導電ペーストの形状を説明するため
の図であり、第２図はこの発明の一実施例により（ｑら
れた積層型の半導体磁器コンデンサを示す斜視図である
。
図において、１は廿ラミックグリーンシート、２は導電
性ペース１〜．３は外部電極、４は半導体磁器コンデン
サを示す。FIG. 1 is a perspective view of the first embodiment of the present invention, and is a diagram for explaining the shape of the ceramic green sheets to be laminated and the conductive paste applied thereon. FIG. 2 is a perspective view showing a laminated semiconductor ceramic capacitor according to an embodiment of the present invention. 4 indicates a semiconductor ceramic capacitor.
Claims (4)
びガラス成分を含む材料よりなるセラミックグリーンシ
ートを用意し、 前記セラミックグリーンシート上に該セラミックグリー
ンシートのいずれかの端縁に至るように導電性ペースト
を塗布し、 次に前記セラミックグリーンシートを複数枚積層して積
層体を得、 前記積層体を空気中または酸化性雰囲気下で焼成して半
導体磁器を得、 前記半導体磁器の外周面に、前記導電性ペーストにより
構成された内部電極に電気的に接続される外部電極を付
与する各工程を備えることを特徴とする積層型半導体磁
器電子部品の製造方法。(1) Prepare a ceramic green sheet made of a material containing semiconductor ceramic powder as a main component and further containing an oxidizing agent and a glass component, and place a conductive layer on the ceramic green sheet so as to reach any edge of the ceramic green sheet. Next, a plurality of the ceramic green sheets are laminated to obtain a laminate, and the laminate is fired in air or in an oxidizing atmosphere to obtain semiconductor porcelain, and on the outer peripheral surface of the semiconductor porcelain. A method for manufacturing a laminated semiconductor ceramic electronic component, comprising the steps of: providing an external electrode electrically connected to the internal electrode made of the conductive paste.
ウム系またはチタン酸バリウム系の半導体磁器粉末を用
いる、特許請求の範囲第１項記載の積層型半導体磁器電
子部品の製造方法。(2) The method for manufacturing a laminated semiconductor ceramic electronic component according to claim 1, wherein a strontium titanate-based or barium titanate-based semiconductor ceramic powder is used as the semiconductor ceramic powder.
ｂ＿３Ｏ＿４、Ｎａ＿２ＣＯ＿３、Ｌｉ＿２ＣＯ＿３お
よびＭｎＣＯ＿３からなる群から選択した１種以上を用
いる特許請求の範囲第１項または第２項記載の積層型半
導体磁器電子部品の製造方法。(3) As the oxidizing agent, CuO, Bi_2O_3, P
The method for manufacturing a laminated semiconductor ceramic electronic component according to claim 1 or 2, using one or more selected from the group consisting of b_3O_4, Na_2CO_3, Li_2CO_3 and MnCO_3.
３およびＡｌ＿２Ｏ＿３からなる群から選択した１種以
上を用いる特許請求の範囲第１項〜第３項のいずれかに
記載の積層型半導体磁器電子部品の製造方法。(4) As the glass component, SiO_2, B_2O_
3. The method for manufacturing a laminated semiconductor ceramic electronic component according to any one of claims 1 to 3, using one or more selected from the group consisting of Al_2O_3 and Al_2O_3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62052606A JPH07114174B2 (en) | 1987-03-06 | 1987-03-06 | Method for manufacturing laminated semiconductor porcelain electronic component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62052606A JPH07114174B2 (en) | 1987-03-06 | 1987-03-06 | Method for manufacturing laminated semiconductor porcelain electronic component |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63219115A true JPS63219115A (en) | 1988-09-12 |
| JPH07114174B2 JPH07114174B2 (en) | 1995-12-06 |
Family
ID=12919449
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62052606A Expired - Lifetime JPH07114174B2 (en) | 1987-03-06 | 1987-03-06 | Method for manufacturing laminated semiconductor porcelain electronic component |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07114174B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075818A (en) * | 1989-02-16 | 1991-12-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure and a method for producing the same |
| US5166759A (en) * | 1989-03-15 | 1992-11-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure |
| US5208727A (en) * | 1989-03-22 | 1993-05-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure and a method for producing the same |
| US5268006A (en) * | 1989-03-15 | 1993-12-07 | Matsushita Electric Industrial Co., Ltd. | Ceramic capacitor with a grain boundary-insulated structure |
-
1987
- 1987-03-06 JP JP62052606A patent/JPH07114174B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5075818A (en) * | 1989-02-16 | 1991-12-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure and a method for producing the same |
| US5166759A (en) * | 1989-03-15 | 1992-11-24 | Matsushita Electric Industrial Co., Ltd. | Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure |
| US5268006A (en) * | 1989-03-15 | 1993-12-07 | Matsushita Electric Industrial Co., Ltd. | Ceramic capacitor with a grain boundary-insulated structure |
| US5208727A (en) * | 1989-03-22 | 1993-05-04 | Matsushita Electric Industrial Co., Ltd. | Semiconductor-type laminated ceramic capacitor with a grain boundary-insulated structure and a method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH07114174B2 (en) | 1995-12-06 |
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