JPS632154B2 - - Google Patents
Info
- Publication number
- JPS632154B2 JPS632154B2 JP57117972A JP11797282A JPS632154B2 JP S632154 B2 JPS632154 B2 JP S632154B2 JP 57117972 A JP57117972 A JP 57117972A JP 11797282 A JP11797282 A JP 11797282A JP S632154 B2 JPS632154 B2 JP S632154B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- buried layer
- diffusion layer
- input gate
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57117972A JPS599955A (ja) | 1982-07-07 | 1982-07-07 | 相補型絶縁ゲ−ト電界効果半導体集積回路装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57117972A JPS599955A (ja) | 1982-07-07 | 1982-07-07 | 相補型絶縁ゲ−ト電界効果半導体集積回路装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS599955A JPS599955A (ja) | 1984-01-19 |
| JPS632154B2 true JPS632154B2 (enrdf_load_stackoverflow) | 1988-01-18 |
Family
ID=14724828
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57117972A Granted JPS599955A (ja) | 1982-07-07 | 1982-07-07 | 相補型絶縁ゲ−ト電界効果半導体集積回路装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS599955A (enrdf_load_stackoverflow) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6262559A (ja) * | 1985-09-12 | 1987-03-19 | Sanyo Electric Co Ltd | 入力保護回路 |
| JPS6262560A (ja) * | 1985-09-12 | 1987-03-19 | Sanyo Electric Co Ltd | 入力保護回路 |
| JPS6354771A (ja) * | 1986-08-25 | 1988-03-09 | Nec Corp | 半導体装置 |
-
1982
- 1982-07-07 JP JP57117972A patent/JPS599955A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS599955A (ja) | 1984-01-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS632154B2 (enrdf_load_stackoverflow) | ||
| JPS5852347B2 (ja) | 高耐圧半導体装置 | |
| JP2854900B2 (ja) | 半導体装置 | |
| JP2611639B2 (ja) | 半導体装置 | |
| JPS6359257B2 (enrdf_load_stackoverflow) | ||
| JPS5838939B2 (ja) | 集積回路 | |
| JPH0324056B2 (enrdf_load_stackoverflow) | ||
| JPS59154056A (ja) | 半導体装置 | |
| JP2949769B2 (ja) | 半導体入力保護装置 | |
| JPH0441499B2 (enrdf_load_stackoverflow) | ||
| JPH0410228B2 (enrdf_load_stackoverflow) | ||
| JP2680869B2 (ja) | 半導体装置 | |
| JPS6080273A (ja) | 高耐圧半導体装置 | |
| JPS5898966A (ja) | 半導体装置の入力保護装置 | |
| JPS6129559B2 (enrdf_load_stackoverflow) | ||
| JPH07112043B2 (ja) | 半導体集積回路 | |
| JPS6148788B2 (enrdf_load_stackoverflow) | ||
| JPS59195875A (ja) | 半導体装置 | |
| JPH0658945B2 (ja) | 半導体装置 | |
| JPH05160341A (ja) | 集積回路装置のノイズ除去用キャパシタ | |
| JPH028462B2 (enrdf_load_stackoverflow) | ||
| JPS6114764A (ja) | 絶縁ゲ−ト型電界効果トランジスタ | |
| JPS63219169A (ja) | 半導体集積回路装置 | |
| JPH0454978B2 (enrdf_load_stackoverflow) | ||
| JPS5931051A (ja) | 高耐圧半導体装置 |