JPS6321341B2 - - Google Patents

Info

Publication number
JPS6321341B2
JPS6321341B2 JP53007279A JP727978A JPS6321341B2 JP S6321341 B2 JPS6321341 B2 JP S6321341B2 JP 53007279 A JP53007279 A JP 53007279A JP 727978 A JP727978 A JP 727978A JP S6321341 B2 JPS6321341 B2 JP S6321341B2
Authority
JP
Japan
Prior art keywords
gate
mos
diffusion layer
dummy
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53007279A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54101294A (en
Inventor
Kazuo Yudasaka
Tatsu Ito
Tadayasu Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP727978A priority Critical patent/JPS54101294A/ja
Publication of JPS54101294A publication Critical patent/JPS54101294A/ja
Publication of JPS6321341B2 publication Critical patent/JPS6321341B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP727978A 1978-01-27 1978-01-27 Dummy mos semiconductor device Granted JPS54101294A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP727978A JPS54101294A (en) 1978-01-27 1978-01-27 Dummy mos semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP727978A JPS54101294A (en) 1978-01-27 1978-01-27 Dummy mos semiconductor device

Publications (2)

Publication Number Publication Date
JPS54101294A JPS54101294A (en) 1979-08-09
JPS6321341B2 true JPS6321341B2 (en, 2012) 1988-05-06

Family

ID=11661580

Family Applications (1)

Application Number Title Priority Date Filing Date
JP727978A Granted JPS54101294A (en) 1978-01-27 1978-01-27 Dummy mos semiconductor device

Country Status (1)

Country Link
JP (1) JPS54101294A (en, 2012)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141025U (en, 2012) * 1989-04-25 1990-11-27

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60177640A (ja) * 1984-02-24 1985-09-11 Hitachi Ltd 半導体集積回路装置
JPH05275692A (ja) * 1992-03-25 1993-10-22 Sony Corp 半導体装置およびその製造方法
JP2006024601A (ja) * 2004-07-06 2006-01-26 Seiko Instruments Inc 電界効果型ｍｏｓトランジスタ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02141025U (en, 2012) * 1989-04-25 1990-11-27

Also Published As

Publication number Publication date
JPS54101294A (en) 1979-08-09

Similar Documents

Publication Publication Date Title
US3999212A (en) Field effect semiconductor device having a protective diode
JP3041043B2 (ja) パワーｍｏｓｆｅｔトランジスタ回路
US4377819A (en) Semiconductor device
US4067099A (en) Method of forming passivation film
JPH07153920A (ja) 半導体装置
KR100214855B1 (ko) 정전기 방지용 트랜지스터 및 그의 제조방법
JPH11261010A (ja) 半導体装置及びその製造方法
US4438449A (en) Field effect semiconductor device having a protective diode with reduced internal resistance
JPS6321341B2 (en, 2012)
EP0246139B1 (fr) Dispositif de protection d'entrée pour circuits intégrés en technologie CMOS
US6208012B1 (en) Zener zap diode and method of manufacturing the same
US4060827A (en) Semiconductor device and a method of making the same
JPS609159A (ja) 半導体装置
JPS59130465A (ja) Ｍｉｓ半導体装置の製造方法
JPH06169061A (ja) 入出力保護装置
JP2000156408A (ja) 半導体装置及びその製造方法
JPS6359257B2 (en, 2012)
JP2748938B2 (ja) 半導体集積回路装置
JPS629228B2 (en, 2012)
JPS5834943A (ja) 半導体装置の製造方法
JPH0710499Y2 (ja) 可変容量ダイオ−ド装置
JPH0213829B2 (en, 2012)
JP2776569B2 (ja) 半導体装置
JP2536423B2 (ja) 半導体装置の製造方法
JPH0237112B2 (en, 2012)